Abstract: This disclosure relates to a high volume manufacturing system for processing and measuring workpieces in a semiconductor processing sequence without leaving the system's controlled environment (e.g., sub-atmospheric pressure). The system includes an active interdiction control system to implement corrective processing within the system when a non-conformity is detected. The corrective processing can include a remedial process sequence to correct the non-conformity or compensate for the non-conformity during subsequent process. The non-conformity may be associated with fabrication measurement data, process parameter data, and/or platform performance data.

Abstract: Battery electrolytes comprising: (a) a solvent suitable for use in a battery electrolyte such as an organic liquid solvent or an ionic liquid; (b) a lithium ion or sodium ion salt suitable for use in a battery electrolyte; and (c) a dispersion of nanoparticles of carbon, metal or metalloid oxides or hydroxides, carbides, nitrides, sulfides, graphene or MXene particles; or a combination thereof. The present invention is also directed to battery cells and batteries comprising these electrolytes and devices comprising these battery cells and batteries.

Abstract: A blade assembly and a fan display including the same. The blade assembly includes a circuit substrate provided in an elongated shape, a lamination board provided in an elongated shape and bonded to the circuit substrate by a laminating glue, and a plurality of light emitting diode (LED) light emitting units. A mounting hole is defined in the lamination board and passes through a thickness of the lamination board. The circuit substrate has a first side attached to the lamination board, the first side and the mounting hole jointly defining a mounting cavity, in which plurality of LED light emitting units are hermetically disposed in the mounting cavity, and are arranged at intervals along a length of the circuit substrate.

Abstract: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical models of semiconductor structures capable of accurate characterization of defects in high-K dielectric layers and embedded nanostructures are presented. In one example, the optical dispersion model includes a continuous Cody-Lorentz model having continuous first derivatives that is sensitive to a band gap of a layer of the unfinished, multi-layer semiconductor wafer. These models quickly and accurately represent experimental results in a physically meaningful manner. The model parameter values can be subsequently used to gain insight and control over a manufacturing process.

Abstract: Methods and systems for optimizing a set of measurement library control parameters for a particular metrology application are presented herein. Measurement signals are collected from one or more metrology targets by a target measurement system. Values of user selected parameters of interest are resolved by fitting a pre-computed measurement library function to the measurement signals for a given set of library control parameters. Values of one or more library control parameters are optimized such that differences between the values of the parameters of interest estimated by the library based measurement and reference values associated with trusted measurements of the parameters of interest are minimized. The optimization of the library control parameter values is performed without recalculating the pre-computed measurement library.

Abstract: Systems and methods for providing efficient modeling and measurement of critical dimensions and/or overlay registrations of wafers are disclosed. Efficiency is improved in both spectral dimension and temporal dimension. In the spectral dimension, efficiency can be improved by allowing different numerical aperture (NA) models to be used for different wavelengths in electromagnetic calculations, effectively providing a balance between computation speed and accuracy. In the temporal dimension, different NA models may be used at different iterations/stages in the process, effectively improving the computation speed without sacrificing the quality of the final result.

Abstract: Provided is a LED backlight module, display screen and detection method of a LED backlight module. The LED backlight module includes a substrate and multiple LED chips arranged on the substrate, one first detection group is arranged on the substrate for each LED chip of more than one LED chip arranged at an interval of N LED chips connected in series, where N is greater than or equal to 0, the first detection group includes a first positive electrode detection point and a first negative electrode detection point, the first positive electrode detection point and the first negative electrode detection point of the first detection group are respectively connected to a positive electrode and a negative electrode of the each LED chip.

Abstract: This disclosure relates to a high volume manufacturing system for processing and measuring workpieces in a semiconductor processing sequence without leaving the system's controlled environment (e.g., sub-atmospheric pressure). The system includes an active interdiction control system to implement corrective processing within the system when a non-conformity is detected. The corrective processing can include a remedial process sequence to correct the non-conformity or compensate for the non-conformity during subsequent process. The non-conformity may be associated with fabrication measurement data, process parameter data, and/or platform performance data.

Abstract: This disclosure relates to a method for using a high volume manufacturing system for processing and measuring workpieces in a semiconductor processing sequence without leaving the system's controlled environment (e.g., sub-atmospheric pressure). The system includes an active interdiction control system to implement corrective processing within the system when a non-conformity is detected. The corrective processing method can include a remedial process sequence to correct the non-conformity or compensate for the non-conformity during subsequent process. The non-conformity may be associated with fabrication measurement data, process parameter data, and/or platform performance data.

Abstract: An apparatus, a system, and a method for in-situ etching monitoring in a plasma processing chamber are provided. The apparatus includes a continuous wave broadband light source to generate incident light beam, an illumination system configured to illuminate an area on a substrate with an incident light beam being directed at normal incidence to the substrate, a collection system configured to collect a reflected light beam being reflected from the illuminated area on the substrate, and direct the reflected light beam to a detector, and processing circuitry. The processing circuitry is configured to process the reflected light beam to suppress background light, determine a property of the substrate or structures formed thereupon based on reference light beam and the reflected light beam that are processed to suppress the background light, and control an etch process based on the determined property.

Abstract: This invention relates to a hair care composition more particularly to a wash-off composition, especially preferred being a shampoo or a conditioner, which provides the desired anti-dandruff efficacy with enhanced stability of the active materials on hair/scalp during use. This is achieved through a judicious combination of an organic UV filter, a zinc compound and selective anti-dandruff agent. The composition comprises 0.01 to 3% by weight zinc pyrithione, an organic UV filter and 0.1 to 5% by weight additional zinc compound. The weight ratio of zinc compound to zinc pyrithione is over 3:1.

Abstract: Methods and systems for evaluating and ranking the measurement efficacy of multiple sets of measurement system combinations and recipes for a particular metrology application are presented herein. Measurement efficacy is based on estimates of measurement precision, measurement accuracy, correlation to a reference measurement, measurement time, or any combination thereof. The automated the selection of measurement system combinations and recipes reduces time to measurement and improves measurement results. Measurement efficacy is quantified by a set of measurement performance metrics associated with each measurement system and recipe. In one example, the sets of measurement system combinations and recipes most capable of measuring the desired parameter of interest are presented to the user in rank order based on corresponding values of one or more measurement performance metrics. A user is able to select the appropriate measurement system combination in an objective, quantitative manner.

Abstract: Methods and systems for performing optical, model based measurements of a small sized semiconductor structure employing an anisotropic characterization of the optical dispersion properties of one or more materials comprising the structure under measurement are presented herein. This reduces correlations among geometric parameters and results in improved measurement sensitivity, improved measurement accuracy, and enhanced measurement contrast among multiple materials under measurement. In a further aspect, an element of a multidimensional tensor describing the dielectric permittivity of the materials comprising the structure is modelled differently from another element. In a further aspect, model based measurements are performed based on measurement data collected from two or more measurement subsystems combined with an anisotropic characterization of the optical dispersion of the materials under measurement.

Abstract: A gradient control method for a microstructure ultrafine crystallization of a deep cone copper shaped charge liner includes the steps of an extrusion forming, a recrystallization heat treatment, and a high-frequency percussion. A multi-pass extrusion is used in the extrusion forming, and in the high-frequency percussion step, a percussion speed is 30,000 to 40,000 times/min, a percussion force is 1600 N to 2000 N, and a number of percussion times is 1 to 3. The forming and surface quality control of the deep cone shaped charge liner are realized by the control technology of the present invention; the plasticity of the material is improved, and fine crystal structures are obtained; and an ultrafine grain gradient structure distributed along the thickness direction is formed in the inner surface of the shaped charge liner.

Abstract: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical models of semiconductor structures capable of accurate characterization of defects in high-K dielectric layers and embedded nanostructures are presented. In one example, the optical dispersion model includes a continuous Cody-Lorentz model having continuous first derivatives that is sensitive to a band gap of a layer of the unfinished, multi-layer semiconductor wafer. These models quickly and accurately represent experimental results in a physically meaningful manner. The model parameter values can be subsequently used to gain insight and control over a manufacturing process.

Abstract: Methods of precisely analyzing and modeling band gap energies and electrical properties of a thin film are provided. One method includes: obtaining a substrate and a thin film disposed above the substrate, the thin film including an interfacial layer above the substrate, and a high-k layer above the interfacial layer; determining a thickness of the thin film; analyzing the thin film using deep ultraviolet spectroscopy ellipsometry to determine the photon energy of reflected light; using a model to determine a set of bandgap energies extracted from a set of results of the photon energy of the analyzing step; and determining at least one of: a leakage current from a main bandgap energy, a nitrogen content from a sub bandgap energy, and an equivalent oxide thickness from the nitrogen content and a composition of the interfacial layer.

Abstract: Methods and systems for optimizing a set of measurement library control parameters for a particular metrology application are presented herein. Measurement signals are collected from one or more metrology targets by a target measurement system. Values of user selected parameters of interest are resolved by fitting a pre-computed measurement library function to the measurement signals for a given set of library control parameters. Values of one or more library control parameters are optimized such that differences between the values of the parameters of interest estimated by the library based measurement and reference values associated with trusted measurements of the parameters of interest are minimized. The optimization of the library control parameter values is performed without recalculating the pre-computed measurement library.

Abstract: A preparation method of a uniform low stress cone shaped charge liner includes the steps of multi-pass extrusion forming, vibration aging treatment, and cryogenic treatment. The step of multi-pass extrusion forming refers to 4 to 8 passes of extrusion deformation under the actions of a three-dimensional compressive stress and a deformation rate of 5 to 10 mm/s, having a deformation amount of 5 to 50% for each pass. The shaped charge liner prepared by the present invention has high dimensional accuracy, good geometric symmetry, low stress value, and excellent stability in the precise machining process and in use, which may significantly improve the penetration capability and stability of the shaped charge liner of high-explosive anti-tank warheads.

Abstract: An LED bracket, an LED device and an LED display screen are disclosed. The LED bracket includes a metal bracket and a cup cover wrapping the metal bracket. The metal bracket includes a first metal pin embedded into the cup cover and a second metal pin exposed from the cup cover. A part, located on a top of the second metal pin, in the cup cover is a reflection cup. A light absorbing layer is disposed on a part of an outer side face of the reflection cup.

Abstract: Described herein are methods for forming inorganic composite oxides. Such methods include combining, at a substantially constant pH of between about 5 and about 6.75 over a period of at least about 5 minutes, an acidic precursor composition and a basic composition to form a precipitate composition, wherein the acidic precursor composition comprises an alumina precursor, a ceria precursor, a zirconia precursor and optionally one or more dopant precursors; stabilizing the precipitate by increasing the pH of the precipitate composition to between about 8 and about 10; and calcining the stabilized precipitate to form an inorganic composite oxide. Also described are inorganic composite oxides formed using such methods.