Abstract: Battery electrolytes comprising: (a) a solvent suitable for use in a battery electrolyte such as an organic liquid solvent or an ionic liquid; (b) a lithium ion or sodium ion salt suitable for use in a battery electrolyte; and (c) a dispersion of nanoparticles of carbon, metal or metalloid oxides or hydroxides, carbides, nitrides, sulfides, graphene or MXene particles; or a combination thereof. The present invention is also directed to battery cells and batteries comprising these electrolytes and devices comprising these battery cells and batteries.

Abstract: A spectroscopic metrology system includes a spectroscopic metrology tool and a controller. The controller generates a model of a multilayer grating including two or more layers, the model including geometric parameters indicative of a geometry of a test layer of the multilayer grating and dispersion parameters indicative of a dispersion of the test layer. The controller further receives a spectroscopic signal of a fabricated multilayer grating corresponding to the modeled multilayer grating from the spectroscopic metrology tool. The controller further determines values of the one or more parameters of the modeled multilayer grating providing a simulated spectroscopic signal corresponding to the measured spectroscopic signal within a selected tolerance. The controller further predicts a bandgap of the test layer of the fabricated multilayer grating based on the determined values of the one or more parameters of the test layer of the fabricated structure.

Abstract: Methods and systems of process control and yield management for semiconductor device manufacturing based on predictions of final device performance are presented herein. Estimated device performance metric values are calculated based on one or more device performance models that link parameter values capable of measurement during process to final device performance metrics. In some examples, an estimated value of a device performance metric is based on at least one structural characteristic and at least one band structure characteristic of an unfinished, multi-layer wafer. In some examples, a prediction of whether a device under process will fail a final device performance test is based on the difference between an estimated value of a final device performance metric and a specified value. In some examples, an adjustment in one or more subsequent process steps is determined based at least in part on the difference.

Abstract: Structural parameters of a specimen are determined by fitting models of the response of the specimen to measurements collected by different measurement techniques in a combined analysis. Models of the response of the specimen to at least two different measurement technologies share at least one common geometric parameter. In some embodiments, a model building and analysis engine performs x-ray and optical analyses wherein at least one common parameter is coupled during the analysis. The fitting of the response models to measured data can be done sequentially, in parallel, or by a combination of sequential and parallel analyses. In a further aspect, the structure of the response models is altered based on the quality of the fit between the models and the corresponding measurement data. For example, a geometric model of the specimen is restructured based on the fit between the response models and corresponding measurement data.

Abstract: An LED bracket, an LED device and an LED display screen are disclosed. The LED bracket includes a metal bracket and a cup cover wrapping the metal bracket. The metal bracket includes a first metal pin embedded into the cup cover and a second metal pin exposed from the cup cover. A part, located on a top of the second metal pin, in the cup cover is a reflection cup. A light absorbing layer is disposed on a part of an outer side face of the reflection cup.

Abstract: Methods and systems for performing optical, model based measurements of a small sized semiconductor structure employing an anisotropic characterization of the optical dispersion properties of one or more materials comprising the structure under measurement are presented herein. This reduces correlations among geometric parameters and results in improved measurement sensitivity, improved measurement accuracy, and enhanced measurement contrast among multiple materials under measurement. In a further aspect, an element of a multidimensional tensor describing the dielectric permittivity of the materials comprising the structure is modelled differently from another element. In a further aspect, model based measurements are performed based on measurement data collected from two or more measurement subsystems combined with an anisotropic characterization of the optical dispersion of the materials under measurement.

Abstract: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical models of semiconductor structures capable of accurate characterization of defects in high-K dielectric layers and embedded nanostructures are presented. In one example, the optical dispersion model includes a continuous Cody-Lorentz model having continuous first derivatives that is sensitive to a band gap of a layer of the unfinished, multi-layer semiconductor wafer. These models quickly and accurately represent experimental results in a physically meaningful manner. The model parameter values can be subsequently used to gain insight and control over a manufacturing process.

Abstract: Methods and systems for evaluating and ranking the measurement efficacy of multiple sets of measurement system combinations and recipes for a particular metrology application are presented herein. Measurement efficacy is based on estimates of measurement precision, measurement accuracy, correlation to a reference measurement, measurement time, or any combination thereof. The automated the selection of measurement system combinations and recipes reduces time to measurement and improves measurement results. Measurement efficacy is quantified by a set of measurement performance metrics associated with each measurement system and recipe. In one example, the sets of measurement system combinations and recipes most capable of measuring the desired parameter of interest are presented to the user in rank order based on corresponding values of one or more measurement performance metrics. A user is able to select the appropriate measurement system combination in an objective, quantitative manner.

Abstract: Methods and tools for generating measurement models of complex device structures based on re-useable, parametric models are presented. Metrology systems employing these models are configured to measure structural and material characteristics associated with different semiconductor fabrication processes. The re-useable, parametric sub-structure model is fully defined by a set of independent parameters entered by a user of the model building tool. All other variables associated with the model shape and internal constraints among constituent geometric elements are pre-defined within the model. In some embodiments, one or more re-useable, parametric models are integrated into a measurement model of a complex semiconductor device. In another aspect, a model building tool generates a re-useable, parametric sub-structure model based on input from a user.

Abstract: Described herein are methods for forming inorganic composite oxides. Such methods include combining, at a substantially constant pH of between about 5 and about 6.75 over a period of at least about 5 minutes, an acidic precursor composition and a basic composition to form a precipitate composition, wherein the acidic precursor composition comprises an alumina precursor, a ceria precursor, a zirconia precursor and optionally one or more dopant precursors; stabilizing the precipitate by increasing the pH of the precipitate composition to between about 8 and about 10; and calcining the stabilized precipitate to form an inorganic composite oxide. Also described are inorganic composite oxides formed using such methods.

Abstract: The present teachings are directed to inorganic oxide materials that include Al2O3, CeO2, and at least one of MgO and Pr6O11. The present teachings are also directed to catalysts having at least one noble metal supported on these inorganic oxide materials, as well as methods for treating exhaust gases from internal combustion engines using such catalysts.

Abstract: The present invention includes generating a three-dimensional design of experiment (DOE) for a plurality of semiconductor wafers, a first dimension of the DOE being a relative amount of a first component of the thin film, a second dimension of the DOE being a relative amount of a second component of the thin film, a third dimension of the DOE being a thickness of the thin film, acquiring a spectrum for each of the wafers, generating a set of optical dispersion data by extracting a real component (n) and an imaginary component (k) of the complex index of refraction for each of the acquired spectrum, identifying one or more systematic features of the set of optical dispersion data; and generating a multi-component Bruggeman effective medium approximation (BEMA) model utilizing the identified one or more systematic features of the set of optical dispersion data.

Abstract: The present invention provides a green light iridium (III) complex and a method of preparing the same, which has a formula as follows: wherein m is 2 or 3; at least one of Ar1, Ar2, Ar3, Ar4, and Ar5 is a group containing fluorophenyl unit, which has a formula as follows: wherein R1, R2, R3, R4, R5 are H, CH3, or FCF3, and at least one of R1, R2, R3, R4, R5 is F or CF3. The green light iridium (III) complex of the present invention has higher light emitting efficiency; the method of preparing the same has tender reaction conditions, simple synthesis steps and easy to handle. Due to the fluorophenyl unit capable of transporting electrons introduced therein, carrier current mobility and exciton transporting equilibrium are increased to contribute better exciton recombination so as to enhance performance of an organic electroluminescent device.

Abstract: The present invention provides a green light iridium (III) complex and a method of preparing the same, which has a formula as follows: wherein m is 2 or 3; at least one of Ar1, Ar2, Ar3, Ar4, and Ar5 is a group containing fluorophenyl unit, which has a formula as follows: wherein R1, R2, R3, R4, R5 are H, CH3, or FCF3, and at least one of R1, R2, R3, R4, R5 is F or CF3. The green light iridium (III) complex of the present invention has higher light emitting efficiency; the method of preparing the same has tender reaction conditions, simple synthesis steps and easy to handle. Due to the fluorophenyl unit capable of transporting electrons introduced therein, carrier current mobility and exciton transporting equilibrium are increased to contribute better exciton recombination so as to enhance performance of an organic electroluminescent device.

Abstract: Methods and tools for generating measurement models of complex device structures based on re-useable, parametric models are presented. Metrology systems employing these models are configured to measure structural and material characteristics associated with different semiconductor fabrication processes. The re-useable, parametric sub-structure model is fully defined by a set of independent parameters entered by a user of the model building tool. All other variables associated with the model shape and internal constraints among constituent geometric elements are pre-defined within the model. In some embodiments, one or more re-useable, parametric models are integrated into a measurement model of a complex semiconductor device. In another aspect, a model building tool generates a re-useable, parametric sub-structure model based on input from a user.

Abstract: A bonding layer, disposed between an interconnect layer and an electrode layer of a solid oxide fuel cell article, may be formed from a yttria stabilized zirconia (YSZ) powder having a monomodal particle size distribution (PSD) with a d50 that is greater than about 1 ?m and a d90 that is greater than about 2 ?m.

Abstract: A transconductance-enhancing passive frequency mixer comprises a transconductance amplification stage, a frequency mixing stage, and an output transresistance amplifier. The transconductance amplification stage has a pre-amplification transconductance-enhancing structure, so that the transconductance is greatly enhanced, thereby obtaining the same transconductance value at a lower bias current. A radio-frequency current is modulated by the frequency mixing stage to generate an output mid-frequency current signal. The mid-frequency current signal passes through the transresistance amplifier, to form voltage output, and finally obtain a mid-frequency voltage signal. The transresistance amplifier has a transconductance-enhancing structure, thereby further reducing input impedance, and improving current utilization efficiency and port isolation. The frequency mixer has the characteristics of low power consumption, high conversion gain, good port isolation, and the like.

Abstract: Methods and systems of process control and yield management for semiconductor device manufacturing based on predictions of final device performance are presented herein. Estimated device performance metric values are calculated based on one or more device performance models that link parameter values capable of measurement during process to final device performance metrics. In some examples, an estimated value of a device performance metric is based on at least one structural characteristic and at least one band structure characteristic of an unfinished, multi-layer wafer. In some examples, a prediction of whether a device under process will fail a final device performance test is based on the difference between an estimated value of a final device performance metric and a specified value. In some examples, an adjustment in one or more subsequent process steps is determined based at least in part on the difference.

Abstract: A bonding layer, disposed between an interconnect layer and an electrode layer of a solid oxide fuel cell article, may be formed from a yttria stabilized zirconia (YSZ) powder having a monomodal particle size distribution (PSD) with a d50 that is greater than about 1 ?m and a d90 that is greater than about 2 ?m.

Abstract: A local oscillator (LO) of a test system is set to an initial frequency whereupon a device under test (DUT) transmits a radio frequency (RF) signal to the test system. Characteristics of the RF signal are measured with the test system and used to identify magnitudes and frequencies of spurious signal products. The LO of the test system is reset to one or more subsequent frequencies that are offset from the initial frequency. One or more subsequent RF signals are transmitted from the DUT to the test system, with the DUT maintaining its original signal settings. Characteristics of the subsequent RF signals are measured with the test system and used to identify magnitudes and frequencies of spurious signal products for each of the subsequent LO frequencies. The spurious signal products that have shifted in frequency for each of the subsequent LO frequencies as self-generated signal products can then be identified.