Abstract: An electronic device can include a battery, a battery charger configured to receive power from an external power source and supply at least one of a charging current or a charging voltage to the battery, and a battery charger controller coupled to charger and configured to control the battery charger. More specifically, the battery charger controller may be configured to control the charger to supply a first AC signal as at least a part of the charging current or charging voltage supplied to the battery, measure a second AC signal associated with the first AC signal, and determine an impedance of the battery at a frequency of interest from the first and second AC signals. The electronic device can also or alternatively include a variable load that may be controlled to supply a first AC signal as at least part of the discharging current or discharging voltage of the battery.

Abstract: A system, computer-readable medium, and method for identifying drilling events in drilling reports, of which the method includes receiving one or more drilling reports including text data representing one or more observations recorded during a drilling activity, identifying a drilling event, a drilling activity, or both from the text data using a model, obtaining feedback based at least in part on the drilling event, the drilling activity, or both that were identified, and training the model based on the feedback.

Abstract: A transistor includes at least one fin structure (e.g., three fin structures) and a gate. The fin structure is disposed above a semiconductor layer above an insulator layer of a semiconductor on insulator substrate. The gate is disposed over at least three sides of the fin structure and a portion of the semiconductor layer. A channel for the transistor is disposed in fin structure and the portion under the gate.

Abstract: A file is transmitted to a plurality of hosts. The hosts are divided into host groups. A host in each host group is selected as a master host. A data block is received by a master host in a host group. The master host sends the data block to both a master host in a next host group and a next host in the host group in order that the next host in the host group sends the data block to a next host of the next host in the host group, and the master host in the next host group sends the data block to both a master host in a next host group of the next host group and a next host of the next host in the next host group.

Abstract: A medical polymer device comprising a biodegradable polymer is provided, wherein the biodegradable polymer has a crystallinity of about 10% to about 80%, and preferably from about 20% to about 60%, wherein the medical polymer device comprises a small molecule organic compound which diffuses into the biodegradable polymer, the small molecule organic compound has a molecular weight of from about 100 to about 1000 Daltons, preferably from about 150 to about 500 Daltons, and more preferably from about 150 to about 250 Daltons, and the small molecule organic compound is non-evaporating or low-evaporating. The present invention also provides a method for preparing a medical polymer device according to the present invention as well as a method for modifying a medical polymer device made from a biodegradable polymer.

Abstract: A tunneling transistor is implemented in silicon, using a FinFET device architecture. The tunneling FinFET has a non-planar, vertical, structure that extends out from the surface of a doped drain formed in a silicon substrate. The vertical structure includes a lightly doped fin defined by a subtractive etch process, and a heavily-doped source formed on top of the fin by epitaxial growth. The drain and channel have similar polarity, which is opposite that of the source. A gate abuts the channel region, capacitively controlling current flow through the channel from opposite sides. Source, drain, and gate terminals are all electrically accessible via front side contacts formed after completion of the device. Fabrication of the tunneling FinFET is compatible with conventional CMOS manufacturing processes, including replacement metal gate and self-aligned contact processes. Low-power operation allows the tunneling FinFET to provide a high current density compared with conventional planar devices.

Abstract: A vertical pillar device includes a substrate, one or more pillars, a drain section, and a source section. The one or more pillars include a first end and a second end. The first end is connected to the substrate at a first interface. The substrate and the one or more pillars are made of different materials. The drain section surrounds the one or more pillars near the first end and away from the first interface. The source section connects to the one or more pillars at the second end.

Abstract: A transmitter device which transmits a first transmit signal and a second transmit signal having different wireless communication standards. The transmitter device includes a power amplifier that amplifies the first transmit signal in a first transmission mode. A first impedance circuit provides the amplified first transmit signal to a radio frequency output port. A second impedance circuit is connected to the first impedance circuit and provides an additional impedance to the first impedance circuit in the first transmission mode. A first switch provides the second transmit signal to the first impedance circuit in a second transmission mode.

Abstract: A method can include receiving well plan information that includes a reservoir target associated with a reservoir of a subterranean environment; based at least in part on characteristics of the subterranean environment, determining well trajectory metrics that comprise a geometrical metric; determining a weighted metric based at least in part on weighting of the well trajectory metrics; and, based at least in part on an assessment of the weighted metric, outputting directional drilling information for a well trajectory to the reservoir target.

Abstract: Embodiments of the present disclosure relate to a prism film, a backlight module, and a display device. The prism film includes a substrate and a plurality of prisms on a surface of the substrate, each of the plurality of prisms having a triangular cross section, and having a first optical surface, a second optical surface, and a third optical surface that are perpendicular to the triangular cross section, wherein the first optical surface is parallel to the surface of the substrate, the first optical surface and the second optical surface form a first bottom angle, the first optical surface and the third optical surface form a second bottom angle, and at least one of the first bottom angle and the second bottom angle of the plurality of prisms gradually changes.

Abstract: A semiconductor device includes a substrate, and a semiconductor fin structure formed on the substrate. The semiconductor device also includes a dielectric liner disposed on and in direct contact with a top surface of the substrate and a sidewall of the semiconductor fin structure. The semiconductor device includes a first isolation layer disposed on and in direct contact with a top surface and a sidewall of the dielectric liner. The semiconductor device also includes a second isolation layer disposed on and in direct contact with a top surface of the first isolation layer and a sidewall of the semiconductor fin structure. The semiconductor device also includes an oxide isolation region formed beneath the semiconductor fin structure by oxidation through the second isolation layer.

Abstract: A large area electrical contact for use in integrated circuits features a non-planar, sloped bottom profile. The sloped bottom profile provides a larger electrical contact area, thus reducing the contact resistance, while maintaining a small contact footprint. The sloped bottom profile can be formed by recessing an underlying layer, wherein the bottom profile can be crafted to have a V-shape, U-shape, crescent shape, or other profile shape that includes at least a substantially sloped portion in the vertical direction. In one embodiment, the underlying layer is an epitaxial fin of a FinFET. A method of fabricating the low-resistance electrical contact employs a thin etch stop liner for use as a hard mask. The etch stop liner, e.g., HfO2, prevents erosion of an adjacent gate structure during the formation of the contact.

Abstract: An input apparatus, an information processing method, and an information processing apparatus are provided. The input apparatus includes a protection surface layer, and a sensing array through which an operation of a user on the protection surface layer can be determined. The information processing method can parse trigger information sent by the input apparatus for its corresponding parameter information and further switch the touchable keyboard to a first input mode or a second input mode according to the obtained parameter information. The information processing method and apparatus and the electronic device activate a keyboard to judge the demand of the user automatically in response to the trigger information entered by the user and further control switching of the input mode of the keyboard in response to the demand of the user.

Abstract: A semi-floating gate transistor is implemented as a vertical FET built on a silicon substrate, wherein the source, drain, and channel are vertically aligned, on top of one another. Current flow between the source and the drain is influenced by a control gate and a semi-floating gate. Front side contacts can be made to each one of the source, drain, and control gate terminals of the vertical semi-floating gate transistor. The vertical semi-floating gate FET further includes a vertical tunneling FET and a vertical diode. Fabrication of the vertical semi-floating gate FET is compatible with conventional CMOS manufacturing processes, including a replacement metal gate process. Low-power operation allows the vertical semi-floating gate FET to provide a high current density compared with conventional planar devices.

Abstract: A method for planning and drilling a well includes receiving geomechanical and geological data for a subterranean domain, and receiving an initial well trajectory including a well path and survey points. The method includes conducting a wellbore stability analysis along the well trajectory based in part on the geomechanical and geological data. Conducting the wellbore stability analysis includes identifying a subset of the well path intervals along the well trajectory as having a risk for instability. The method includes calculating a geomechanics nudge for one or more survey points along the well trajectory. The geomechanics nudge is calculated as a derivative of the wellbore stability at the one or more survey points. The method includes modifying the one or more survey points and the one or more well path intervals connected thereto based in part on the geomechanics nudge to generate a modified well trajectory.

Abstract: A large melting furnace suitable for borosilicate glass. The melting furnace includes a melting area, a reinforcing area, an ascending area and a clarifying area. The melting area includes no furnace crown, a surface of molten glass in the melting area is not covered by any wall and exposed for feeding. The reinforcing area includes a first furnace crown, the first furnace crown includes a first partition wall and a second partition wall, and the reinforcing area and the melting area are separated by the first partition wall, and a lower end of the first partition wall goes deep below a surface of molten glass but is not in contact with a bottom of the melting furnace, so as to guarantee that the molten glass in the melting area and the reinforcing area is interconnected.

Abstract: Provided are a method and a kit for constructing a simplified genomic library. The method comprises: performing a non-specific amplification on a whole genome with a first pair of primers to obtain random amplified fragments; performing a specific amplification on the random amplified fragments with a second pair of primers to obtain the simplified genomic library.

Abstract: The present disclosure discloses a method and an apparatus for controlling a virtual speech assistant, a user device and a storage medium, which solves the problem associated with bad feedback effect for input of a user device in the field. The method includes: displaying a virtual speech assistant icon in a floating way on a human-machine interaction interface of a user device; receiving a speech instruction when a microphone of the user device is enabled; and performing an operation according to the speech instruction, and producing a speech output corresponding to an operation result of the operation.

Abstract: A tunneling transistor is implemented in silicon, using a FinFET device architecture. The tunneling FinFET has a non-planar, vertical, structure that extends out from the surface of a doped drain formed in a silicon substrate. The vertical structure includes a lightly doped fin defined by a subtractive etch process, and a heavily-doped source formed on top of the fin by epitaxial growth. The drain and channel have similar polarity, which is opposite that of the source. A gate abuts the channel region, capacitively controlling current flow through the channel from opposite sides. Source, drain, and gate terminals are all electrically accessible via front side contacts formed after completion of the device. Fabrication of the tunneling FinFET is compatible with conventional CMOS manufacturing processes, including replacement metal gate and self-aligned contact processes. Low-power operation allows the tunneling FinFET to provide a high current density compared with conventional planar devices.

Abstract: There are disclosed antenna arrays for portable electronic devices. In one aspect, the antenna array comprises at least two antennas, each antenna comprising at least two radiating elements; and at least two control networks each comprising a plurality of impedance matching circuits and RF switches, each antenna being connected to a respective control network. Each control network connects the radiating elements of its respective antenna to a single RF port. Each antenna element is connected to a respective first RF switch in its respective control network allowing selection between different ones of the plurality of impedance matching circuits. Each port is connected to a respective second RF switch in its respective control network allowing selection between different ones of the plurality of impedance matching circuits. The impedance matching circuits are connected between the first RF switches and the second RF switch in each control network.