Abstract: A camera pose information detection method, includes collecting a plurality of images by means of a multi-lens camera, and determining a road surface region image based on the plurality of images; and projecting points in the road surface region image onto a camera coordinate system, so as to obtain camera pose information.

Abstract: Systems and methods for performing hole profile modeling in a semiconductor device virtual fabrication environment are discussed. More particularly, hole profiling modeling may be performed for complicated holes used in fabricating semiconductor devices to support DOEs to optimize the fabrication process.

Abstract: A combined bio-artificial liver support system, includes branch tubes that are connected in sequence: a blood input branch tube, an upstream tail end, a first plasma separation branch tube comprising at least a first plasma separator, a non-biological purification branch tube comprising at least a plasma perfusion device and a bilirubin adsorber, a biological purification branch tube comprising at least a hepatocyte culture cartridge assembly, and a plasma return branch tube, a downstream tail end of which is set as a blood output end.

Abstract: A system, method, and/or non-transitory computer readable medium may implement or be configured to implement the following computational operations associated with electrochemical or vapor phase deposition: (a) defining an interface of a substrate where deposition of a deposited material is to occur or is occurring; (b) using a computational model of the deposition to determine a local deposition rate of the deposited material at multiple locations on the interface, where the computational model of the deposition computes the local deposition rate as a function of one or more geometric parameters of the one or more recessed or protruding features; and (c) computationally adjusting the location of the interface to produce an adjusted interface.

Abstract: Systems and methods for performing local Critical Dimension Uniformity (CDU) modeling in a virtual fabrication environment are discussed. More particularly, local CD variance is replicated in the virtual fabrication environment in order to produce a CDU mask that can be used during a virtual fabrication sequence to produce more accurate results reflecting the CD variance of features that occurs in a pattern for a semiconductor device being physically fabricated.

Abstract: Systems and methods for performing depth-dependent oxidation modeling and depth-dependent etch modeling in a virtual fabrication environment are discussed. More particularly, a virtual fabrication environment models, as part of a process sequence, oxidant dispersion in a depth-dependent manner and simulates the subsequent oxidation reaction based on the determined oxidant thickness along an air/silicon interface. Further the virtual fabrication environment performs depth-dependent etch modeling as part of a process sequence to determine etchant concentration and simulate the etching of material along an air/material interface.

Abstract: Systems and methods for performing reflow modeling in a virtual fabrication environment are discussed. More particularly, the virtual fabrication environment may determine metal or material “reflow” or movement during fabrication of a semiconductor device structure. A reflow modeling step with user-specified parameters may be inserted into a process sequence used during fabrication of the semiconductor device structure.

Abstract: Systems and methods for performing depth-dependent oxidation modeling and depth-dependent etch modeling in a virtual fabrication environment are discussed. More particularly, a virtual fabrication environment models, as part of a process sequence, oxidant dispersion in a depth-dependent manner and simulates the subsequent oxidation reaction based on the determined oxidant thickness along an air/silicon interface. Further the virtual fabrication environment performs depth-dependent etch modeling as part of a process sequence to determine etchant concentration and simulate the etching of material along an air/material interface.

Abstract: Disclosed herein are composite materials and methods of making and use thereof. The composite materials disclosed herein can comprise: a first metal oxide particle having a thermal stability and a specific reversible oxygen storage capacity, wherein the first metal oxide particle comprises a first metal oxide comprising a transition metal oxide; and a second metal oxide disposed on the first metal oxide particle; wherein the composite material has a thermal stability and a specific reversible oxygen storage capacity; and wherein the thermal stability of the composite material is greater than the thermal stability of the first metal oxide particle. The methods of use of the composite materials described herein can comprise using the composite material as a catalyst, as an oxygen carrier, as a catalyst support, in a fuel cell, in a catalytic converter, or a combination thereof.

Abstract: A vascular implant, a delivery device and a medical apparatus are disclosed. The vascular implant includes a first engagement structure, and the delivery device includes the delivery shaft and a chamber. The delivery shaft includes a second engagement structure configured for detachable retaining engagement with the first engagement structure. Both the first engagement structure and the delivery shaft are configured to be received in the chamber. When the first engagement structure and the delivery shaft are received in the chamber, the first engagement structure is confined by the chamber and thus remains in retaining engagement with the second engagement structure, thus axially locking the vascular implant to the delivery shaft. When the first engagement structure is removed from the chamber, it is no longer confined thereby and is thus detachable from the second engagement structure, thus axially unlocking the vascular implant from the delivery shaft.

Abstract: A method of preparing tunable inorganic patterned nanofeatures by infiltration of a block copolymer scaffold having a plurality of self-assembled periodic polymer microdomains. The method may be used sequential infiltration synthesis (SIS), related to atomic layer deposition (ALD). The method includes selecting a metal precursor that is configured to selectively react with the copolymer unit defining the microdomain but is substantially non-reactive with another polymer unit of the copolymer. A tunable inorganic features is selectively formed on the microdomain to form a hybrid organic/inorganic composite material of the metal precursor and a co-reactant. The organic component may be optionally removed to obtain an inorganic feature s with patterned nanostructures defined by the configuration of the microdomain.

Abstract: A camera pose information detection method, includes collecting a plurality of images by means of a multi-lens camera, and determining a road surface region image based on the plurality of images; and projecting points in the road surface region image onto a camera coordinate system, so as to obtain camera pose information.

Abstract: Systems and methods for performing depth-dependent oxidation modeling and depth-dependent etch modeling in a virtual fabrication environment are discussed. More particularly, a virtual fabrication environment models, as part of a process sequence, oxidant dispersion in a depth-dependent manner and simulates the subsequent oxidation reaction based on the determined oxidant thickness along an air/silicon interface. Further the virtual fabrication environment performs depth-dependent etch modeling as part of a process sequence to determine etchant concentration and simulate the etching of material along an air/material interface.

Abstract: Systems and methods for performing depth-dependent oxidation modeling and depth-dependent etch modeling in a virtual fabrication environment are discussed. More particularly, a virtual fabrication environment models, as part of a process sequence, oxidant dispersion in a depth-dependent manner and simulates the subsequent oxidation reaction based on the determined oxidant thickness along an air/silicon interface. Further the virtual fabrication environment performs depth-dependent etch modeling as part of a process sequence to determine etchant concentration and simulate the etching of material along an air/material interface.

Abstract: A combined bio-artificial liver support system, includes branch tubes that are connected in sequence: a blood input branch tube, an upstream tail end, a first plasma separation branch tube comprising at least a first plasma separator, a non-biological purification branch tube comprising at least a plasma perfusion device and a bilirubin adsorber, a biological purification branch tube comprising at least a hepatocyte culture cartridge assembly, and a plasma return branch tube, a downstream tail end of which is set as a blood output end.

Abstract: A semiconductor structure and a method for fabricating the semiconductor structure are provided. The method includes providing a substrate. The substrate includes an active region and a blank region disposed adjacent to the active region. The method also includes forming a fin material layer on the substrate. Further, the method includes forming a plurality of fins on the active region, and a plurality of dummy fins on the blank region by etching the fin material layer. A spacing between a fin and an adjacent dummy fin is greater than a spacing between adjacent fins.

Abstract: A method of preparing tunable inorganic patterned nanofeatures by infiltration of a block copolymer scaffold having a plurality of self-assembled periodic polymer microdomains. The method may be used sequential infiltration synthesis (SIS), related to atomic layer deposition (ALD). The method includes selecting a metal precursor that is configured to selectively react with the copolymer unit defining the microdomain but is substantially non-reactive with another polymer unit of the copolymer. A tunable inorganic features is selectively formed on the microdomain to form a hybrid organic/inorganic composite material of the metal precursor and a co-reactant. The organic component may be optionally removed to obtain an inorganic feature s with patterned nanostructures defined by the configuration of the microdomain.

Abstract: Disclosed herein are composite materials and methods of making and use thereof. The composite materials disclosed herein can comprise: a first metal oxide particle having a thermal stability and a specific reversible oxygen storage capacity, wherein the first metal oxide particle comprises a first metal oxide comprising a transition metal oxide; and a second metal oxide disposed on the first metal oxide particle; wherein the composite material has a thermal stability and a specific reversible oxygen storage capacity; and wherein the thermal stability of the composite material is greater than the thermal stability of the first metal oxide particle. The methods of use of the composite materials described herein can comprise using the composite material as a catalyst, as an oxygen carrier, as a catalyst support, in a fuel cell, in a catalytic converter, or a combination thereof.

Abstract: A semiconductor structure and a method for fabricating the semiconductor structure are provided. The method includes providing a semiconductor substrate including a dense region and a sparse region. The method also includes forming initial fins equally spaced apart from one another on the semiconductor substrate, the initial fins including a plurality of intrinsic fins and dummy fins. The intrinsic fins on the dense region has a spatial density greater than the intrinsic fins on the sparse region. In addition, the method includes forming a first isolation layer on the semiconductor substrate. The first isolation layer covers a portion of sidewalls of the dummy fins and a portion of sidewalls of the intrinsic fins. Further, the method includes forming first trenches in the first isolation layer by removing the dummy fins, and forming a second isolation layer in the first trenches.