Abstract: A cathode composite material includes a cathode active material and a coating layer coated on a surface of the cathode active material. The cathode active material includes a layered type lithium nickel cobalt manganese oxide. The coating layer comprises a lithium metal oxide having a crystal structure belonging to C2/c space group of the monoclinic crystal system. The present disclosure also relates to a lithium ion battery including the cathode composite material.

Abstract: A cathode composite material includes a cathode active material and a coating layer coated on a surface of the cathode active material. A material of the coating layer is a lithium metal oxide having a crystal structure belonging to C2/c space group of the monoclinic crystal system. The present disclosure also relates to a lithium ion battery including the cathode composite material.

Abstract: A cathode composite material includes a cathode active material and a coating layer coated on a surface of the cathode active material. The cathode active material includes a lithium cobalt oxide. The coating layer includes a lithium metal oxide having a crystal structure belonging to C2/c space group of the monoclinic crystal system. The present disclosure also relates to a lithium ion battery including the cathode composite material.

Abstract: A method for preparing a cathode active material includes mixing a phosphorus source material, a lithium source material, and a dispersing agent together to form a first liquid mixture. An iron powder is added into the first liquid mixture. The first liquid mixture with the iron powder therein is dried to achieve a precursor. The precursor is calcined in a protective gas at a temperature of about 600° C. to about 800° C. for more than about 2 hours.

Abstract: A cathode composite material includes a cathode active material and a coating layer coated on a surface of the cathode active material. The cathode active material includes a spinel type lithium manganese oxide. The coating layer comprises a lithium metal oxide having a crystal structure belonging to C2/c space group of the monoclinic crystal system. The present disclosure also relates to a lithium ion battery including the cathode composite material.

Abstract: A cathode composite material includes a cathode active material and a coating layer coated on a surface of the cathode active material. The cathode active material includes a lithium cobalt oxide. The coating layer includes a lithium metal oxide having a crystal structure belonging to C2/c space group of the monoclinic crystal system. The present disclosure also relates to a lithium ion battery including the cathode composite material.

Abstract: A cathode composite material includes a cathode active material and a coating layer coated on a surface of the cathode active material. The cathode active material includes a layered type lithium nickel cobalt manganese oxide. The coating layer comprises a lithium metal oxide having a crystal structure belonging to C2/c space group of the monoclinic crystal system. The present disclosure also relates to a lithium ion battery including the cathode composite material.

Abstract: A cathode composite material includes a cathode active material and a coating layer coated on a surface of the cathode active material. The cathode active material includes a spinel type lithium nickel manganese oxide. The coating layer includes a lithium metal oxide having a crystal structure belonging to C2/c space group of the monoclinic crystal system. The present disclosure also relates to a lithium ion battery including the cathode composite material.

Abstract: A method for making a cathode composite material of a lithium ion battery is disclosed. In the method, a composite precursor is formed. The composite precursor includes a cathode active material precursor and a coating layer precursor coated on a surface of the cathode active material precursor. The composite precursor is reacted with a lithium source chemical compound, to lithiate both the cathode active material precursor and the coating layer precursor in the composite precursor.

Abstract: A cathode composite material includes a cathode active material and a coating layer coated on a surface of the cathode active material. The cathode active material includes a layered type lithium transition metal oxide. A material of the coating layer is a lithium metal oxide having a crystal structure belonging to C2/c space group of the monoclinic crystal system. The present disclosure also relates to a lithium ion battery including the cathode composite material.

Abstract: A cathode composite material includes a cathode active material and a coating layer coated on a surface of the cathode active material. A material of the coating layer is a lithium metal oxide having a crystal structure belonging to C2/c space group of the monoclinic crystal system. The present disclosure also relates to a lithium ion battery including the cathode composite material.

Abstract: A memory device comprises at least one memory array on a semiconductor substrate. Each said memory array comprises a page control line and a plurality of pages, each said page is arranged in a row comprising a plurality of bytes which couple to a page control transistor with its drain terminal connected to the page control line. Each said byte includes at least one memory cell. Said memory array further comprises a plurality of source control devices which are configured to provide either predetermined biases or floating potentials to source lines, each said source line couples to all the bytes on the same byte segment of the memory array. Read, erase, and program methods are provided to operate said memory devices in byte addressable fashion.

Abstract: A memory device comprises at least one memory array on a semiconductor substrate. Each said memory array comprises a page control line and a plurality of pages, each said page is arranged in a row comprising a plurality of bytes which couple to a page control transistor with its drain terminal connected to the page control line. Each said byte includes at least one memory cell. Said memory array further comprises a plurality of source control devices which are configured to provide either predetermined biases or floating potentials to source lines, each said source line couples to all the bytes on the same byte segment of the memory array. Read, erase, and program methods are provided to operate said memory devices in byte addressable fashion.

Abstract: A plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. The plasma etch resist material may be initially patterned using photolithography, electron-beam lithography or a block copolymer self-assembly process.

Abstract: A multi-component tunable resistive coating and methods of depositing the coating on the surfaces of a microchannel plate (MCP) detector. The resistive coating composed of a plurality of alternating layers of a metal oxide resistive component layer and a conductive component layer composed of at least one of a metal, a metal nitride and a metal sulfide. The coating may further include an emissive layer configured to produce a secondary electron emission in response to a particle interacting with the MCP and a neutron-absorbing layer configured to respond to a neutron interacting with the MCP.

Abstract: A method for making metal sulfide nanocrystals is provided. First, some metal salt powders are provided in a container. Second, superfluous mercaptan is added into the container. Then the superfluous mercaptan and the metal salt are stirred uniformly to get a precursor mixture and the precursor mixture is heated to get the metal sulfide nanocrystals. Lastly, the metal sulfide nanocrystals are separated and washed.

Abstract: A method of preparing tunable inorganic patterned nanofeatures by infiltration of a block copolymer scaffold having a plurality of self-assembled periodic polymer microdomains. The method may be used sequential infiltration synthesis (SIS), related to atomic layer deposition (ALD). The method includes selecting a metal precursor that is configured to selectively react with the copolymer unit defining the microdomain but is substantially non-reactive with another polymer unit of the copolymer. A tunable inorganic features is selectively formed on the microdomain to form a hybrid organic/inorganic composite material of the metal precursor and a co-reactant. The organic component may be optionally removed to obtain an inorganic feature s with patterned nanostructures defined by the configuration of the microdomain.

Abstract: A method for making metal sulfide nanocrystals is provided. First, some metal salt powders are provided in a container. Second, superfluous mercaptan is added into the container. Then the superfluous mercaptan and the metal salt are stirred uniformly to get a precursor mixture and the precursor mixture is heated to get the metal sulfide nanocrystals. Lastly, the metal sulfide nanocrystals are separated and washed.

Abstract: A method for preparing a cathode active material includes mixing a phosphorus source material, a lithium source material, and a dispersing agent together to form a first liquid mixture. An iron powder is added into the first liquid mixture. The first liquid mixture with the iron powder therein is dried to achieve a precursor. The precursor is calcined in a protective gas at a temperature of about 600° C. to about 800° C. for more than about 2 hours.

Abstract: The present subject matter relates to the modification of fibers by the growth of films by the Atomic Layer Epitaxy (ALE) process, which is also commonly referred to as Atomic Layer Deposition (ALD). The presently disclosed subject matter relates in particular to a process for the modification of the surface and bulk properties of fiber and textile media, including synthetic polymeric and natural fibers and yarns in woven, knit, and nonwoven form by low-temperature ALD.