Abstract: A semiconductor structure and a method for fabricating the semiconductor structure are provided. The method includes providing a semiconductor substrate including a dense region and a sparse region. The method also includes forming initial fins equally spaced apart from one another on the semiconductor substrate, the initial fins including a plurality of intrinsic fins and dummy fins. The intrinsic fins on the dense region has a spatial density greater than the intrinsic fins on the sparse region. In addition, the method includes forming a first isolation layer on the semiconductor substrate. The first isolation layer covers a portion of sidewalls of the dummy fins and a portion of sidewalls of the intrinsic fins. Further, the method includes forming first trenches in the first isolation layer by removing the dummy fins, and forming a second isolation layer in the first trenches.

Abstract: A method of preparing tunable inorganic patterned nanofeatures by infiltration of a block copolymer scaffold having a plurality of self-assembled periodic polymer microdomains. The method may be used sequential infiltration synthesis (SIS), related to atomic layer deposition (ALD). The method includes selecting a metal precursor that is configured to selectively react with the copolymer unit defining the microdomain but is substantially non-reactive with another polymer unit of the copolymer. A tunable inorganic features is selectively formed on the microdomain to form a hybrid organic/inorganic composite material of the metal precursor and a co-reactant. The organic component may be optionally removed to obtain an inorganic feature s with patterned nanostructures defined by the configuration of the microdomain.

Abstract: A semiconductor structure and a method for fabricating the semiconductor structure are provided. The method includes providing a semiconductor substrate including a dense region and a sparse region. The method also includes forming initial fins equally spaced apart from one another on the semiconductor substrate, the initial fins including a plurality of intrinsic fins and dummy fins. The intrinsic fins on the dense region has a spatial density greater than the intrinsic fins on the sparse region. In addition, the method includes forming a first isolation layer on the semiconductor substrate. The first isolation layer covers a portion of sidewalls of the dummy fins and a portion of sidewalls of the intrinsic fins. Further, the method includes forming first trenches in the first isolation layer by removing the dummy fins, and forming a second isolation layer in the first trenches.

Abstract: A semiconductor structure and a method for fabricating the semiconductor structure are provided. The method includes providing a substrate. The substrate includes an active region and a blank region disposed adjacent to the active region. The method also includes forming a fin material layer on the substrate. Further, the method includes forming a plurality of fins on the active region, and a plurality of dummy fins on the blank region by etching the fin material layer. A spacing between a fin and an adjacent dummy fin is greater than a spacing between adjacent fins.

Abstract: An eyeglasses temple includes a curved section and a support section coupled to the curved section. The curved section includes a metal member, upper and lower plastic members for wrapping the metal member, and a connector installed to an inner side of the support section and proximate to an eyeglasses frame. The metal member is made of a flexible iron material, the upper and lower plastic members are made of silicone and nylon respectively, and the support section is made of nylon. With the metal member made of a flexible iron material, the upper plastic member made of silicon, the lower plastic member made of nylon, and the support section made of nylon, the eyeglasses temple has a higher strength, and provides a friction between the eyeglasses temple and a wearer's ear to prevent the eyeglasses from sliding down or falling out from the wearer's nose bridge and ears.

Abstract: An eyeglasses temple includes a curved section and a support section coupled to the curved section. The curved section includes a metal member, upper and lower plastic members for wrapping the metal member, and a connector installed to an inner side of the support section and proximate to an eyeglasses frame. The metal member is made of a flexible iron material, the upper and lower plastic members are made of silicone and nylon respectively, and the support section is made of nylon. With the metal member made of a flexible iron material, the upper plastic member made of silicon, the lower plastic member made of nylon, and the support section made of nylon, the eyeglasses temple has a higher strength, and provides a friction between the eyeglasses temple and a wearer's ear to prevent the eyeglasses from sliding down or falling out from the wearer's nose bridge and ears.

Abstract: An article including a metal substrate, an anti-coking catalyst layer and an alumina barrier layer disposed between the metal substrate and the anti-coking catalyst layer is provided. A process for making the article is also provided.

Abstract: A plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. The plasma etch resist material may be initially patterned using photolithography, electron-beam lithography or a block copolymer self-assembly process.

Abstract: A method of preparing tunable inorganic patterned nanofeatures by infiltration of a block copolymer scaffold having a plurality of self-assembled periodic polymer microdomains. The method may be used sequential infiltration synthesis (SIS), related to atomic layer deposition (ALD). The method includes selecting a metal precursor that is configured to selectively react with the copolymer unit defining the microdomain but is substantially non-reactive with another polymer unit of the copolymer. A tunable inorganic features is selectively formed on the microdomain to form a hybrid organic/inorganic composite material of the metal precursor and a co-reactant. The organic component may be optionally removed to obtain an inorganic feature s with patterned nanostructures defined by the configuration of the microdomain.

Abstract: A charge pump device with NMOS transistor circuit is provided for low voltage operation. The charge pump stage, comprising four NMOS transistors and three capacitors, is configured to alleviate the substrate body effect and the charge transfer loss. The charge pump circuit can be constructed on a p-type semiconductor substrate directly without deep N well isolation. The circuit is driven by two non-overlapping complementary clock signals, which can be generated easily with an integrated fabrication. The charge pump device can be implemented with a multiple stage to provide a stable high voltage output.

Abstract: A method of preparing tunable inorganic patterned nanofeatures by infiltration of a block copolymer scaffold having a plurality of self-assembled periodic polymer microdomains. The method may be used sequential infiltration synthesis (SIS), related to atomic layer deposition (ALD). The method includes selecting a metal precursor that is configured to selectively react with the copolymer unit defining the microdomain but is substantially non-reactive with another polymer unit of the copolymer. A tunable inorganic features is selectively formed on the microdomain to form a hybrid organic/inorganic composite material of the metal precursor and a co-reactant. The organic component may be optionally removed to obtain an inorganic features with patterned nanostructures defined by the configuration of the microdomain.

Abstract: A cathode composite material includes a cathode active material and a coating layer coated on a surface of the cathode active material. The cathode active material includes a spinel type lithium nickel manganese oxide. The coating layer includes a lithium metal oxide having a crystal structure belonging to C2/c space group of the monoclinic crystal system. The present disclosure also relates to a lithium ion battery including the cathode composite material.

Abstract: An article including a metal substrate, an anti-coking catalyst layer and an alumina barrier layer disposed between the metal substrate and the anti-coking catalyst layer is provided. A process for making the article is also provided.

Abstract: A plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. The plasma etch resist material may be initially patterned using photolithography, electron-beam lithography or a block copolymer self-assembly process.

Abstract: A cathode composite material includes a cathode active material and a coating layer coated on a surface of the cathode active material. The cathode active material includes a spinel type lithium manganese oxide. The coating layer comprises a lithium metal oxide having a crystal structure belonging to C2/c space group of the monoclinic crystal system. The present disclosure also relates to a lithium ion battery including the cathode composite material.

Abstract: A plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. The plasma etch resist material may be initially patterned using photolithography, electron-beam lithography or a block copolymer self-assembly process.

Abstract: A multi-component tunable resistive coating and methods of depositing the coating on the surfaces of a microchannel plate (MCP) detector. The resistive coating composed of a plurality of alternating layers of a metal oxide resistive component layer and a conductive component layer composed of at least one of a metal, a metal nitride and a metal sulfide. The coating may further include an emissive layer configured to produce a secondary electron emission in response to a particle interacting with the MCP and a neutron-absorbing layer configured to respond to a neutron interacting with the MCP.

Abstract: A method for making a cathode composite material of a lithium ion battery is disclosed. In the method, a composite precursor is formed. The composite precursor includes a cathode active material precursor and a coating layer precursor coated on a surface of the cathode active material precursor. The composite precursor is reacted with a lithium source chemical compound, to lithiate both the cathode active material precursor and the coating layer precursor in the composite precursor.

Abstract: An electrode for solar conversion including a porous structure configured to contain therein at least one of a catalyst, a chromophore, and a redox couple. The porous structure has a set of electrically conductive nanoparticles adjoining each other. The set of electrically conductive nanoparticles forms a meandering electrical path connecting the nanoparticles together. The porous structure has an atomic layer by layer deposited semiconductive coating disposed conformally on the electrically conductive nanoparticles to form an exterior surface for reception of charge carriers.

Abstract: A cathode composite material includes a cathode active material and a coating layer coated on a surface of the cathode active material. The cathode active material includes a layered type lithium transition metal oxide. A material of the coating layer is a lithium metal oxide having a crystal structure belonging to C2/c space group of the monoclinic crystal system. The present disclosure also relates to a lithium ion battery including the cathode composite material.