Patents by Inventor Qingchao Meng
Qingchao Meng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11777501Abstract: A method includes: forming first, second, and third NWs; forming form first to fourth transistors in corresponding first to fourth groups of active regions, connecting selected transistors amongst the first and second transistors to form first and second input circuits respectively receiving a first input signal in a first domain and a second input signal in the first domain; connecting selected transistors amongst the first and third transistors and amongst the first and fourth transistors to respectively form a first single bit level shifter (SBLS) and a second SBLS; each SBLS operates in the second domain and receives correspondingly versions of the first and second input signals; and connecting selected transistors amongst the first and third transistors to form a control circuit for toggling the first and second SBLSs between a normal and a standby state, a portion of the control circuit and the first SBLS sharing the second NW.Type: GrantFiled: August 10, 2022Date of Patent: October 3, 2023Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., TSMC NANJING COMPANY, LIMITEDInventors: Jing Ding, Zhang-Ying Yan, Qingchao Meng, Yi-Ting Chen
-
Publication number: 20230290781Abstract: A semiconductor device includes a first conductivity-type substrate, and a cell region including: a second conductivity type deep well; first and second non-deep wells having the second conductivity-type, the first and second non-deep wells being in corresponding first and second portions of the substrate, the first and second portions of the substrate being in the deep well; and first, second, third and fourth transistor-regions. The first and second transistor-regions are correspondingly in the first and second non-deep wells and include first conductivity-type first transistors. The third and fourth transistor-regions are in the third and fourth portions of the substrate which are in the deep well, and include second transistors having the second conductivity-type. The first transistor-region is configured for a first power domain. The second, third and fourth transistor-regions are configured for a second power domain that is different than the first power domain.Type: ApplicationFiled: April 14, 2022Publication date: September 14, 2023Inventors: Huaixin XIAN, Zhang-Ying YAN, Qingchao MENG
-
Publication number: 20230291394Abstract: A circuit includes an input circuit, a level shifter circuit and an output circuit. The input circuit is coupled to a first voltage supply, and configured to receive a first input signal, and to generate at least a second or a third input signal. The level shifter circuit is coupled to the input circuit and a second voltage supply, and configured to receive a first enable signal, the second or third input signal, and to generate a first signal responsive to the first enable signal, the second input signal or the third input signal. The level shifter circuit includes a header circuit coupled to a first node, and is configured to enable or disable the level shifter circuit responsive to the first enable signal. The output circuit is coupled to at least the level shifter circuit and the second voltage supply, and is configured to generate an output signal.Type: ApplicationFiled: May 4, 2022Publication date: September 14, 2023Inventors: Jing DING, Zhang-Ying YAN, Qingchao MENG, Lei PAN
-
Publication number: 20230244846Abstract: A current-distributing structure in an integrated circuit (IC) includes a substrate; and first and second active regions on the substrate. First and second sets of gate structures correspondingly overlap the first and second active regions. A first conductive structure in a first metallization layer overlaps the first active region and is electrically coupled to the first set of gate structures. A second conductive structure in the first metallization layer overlaps the second active region and is electrically coupled to the second set of gate structures. A third conductive structure in a second metallization layer is electrically coupled to the first and the second conductive structures.Type: ApplicationFiled: February 10, 2022Publication date: August 3, 2023Inventors: Huaixin XIAN, Zhang-Ying YAN, JiBao ZHANG, Qingchao MENG
-
Patent number: 11699015Abstract: An integrated circuit includes a middle active-region structure between a group-one active-region structure and a group-two active-region structure. The integrated circuit also includes a main circuit, a group-one circuit, and a group-two circuit. The main circuit includes at least one boundary gate-conductor intersecting the middle active-region structure. The group-one circuit includes a group-one isolation structure separating the group-one active-region structure into a first part in the group-one circuit and a second part in a first adjacent circuit. The group-two circuit includes a group-two isolation structure separating the group-two active-region structure into a first part in the group-two circuit and a second part in a second adjacent circuit.Type: GrantFiled: August 3, 2021Date of Patent: July 11, 2023Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., TSMC NANJING COMPANY, LIMITED, TSMC CHINA COMPANY, LIMITEDInventors: Huaixin Xian, J. B. Zhang, Yang Zhou, Kai Zhou, Qingchao Meng, Lei Pan
-
Publication number: 20230029848Abstract: A semiconductor device having a cell region, the cell region including a first set of one or more first blocks and a second set of one or more second blocks. Each of the first blocks including a clock gate and each of the second blocks includes a decoupling capacitor. The first set has two or more first blocks and/or the second set has two or more second blocks. The first blocks of the first set are interleaved with the second blocks of the second set.Type: ApplicationFiled: August 19, 2021Publication date: February 2, 2023Inventors: Liu HAN, Xin Yong WANG, Qingchao MENG, Huaixin XIAN, Jing DING
-
Publication number: 20230004702Abstract: An integrated circuit includes a middle active-region structure between a group-one active-region structure and a group-two active-region structure. The integrated circuit also includes a main circuit, a group-one circuit, and a group-two circuit. The main circuit includes at least one boundary gate-conductor intersecting the middle active-region structure. The group-one circuit includes a group-one isolation structure separating the group-one active-region structure into a first part in the group-one circuit and a second part in a first adjacent circuit. The group-two circuit includes a group-two isolation structure separating the group-two active-region structure into a first part in the group-two circuit and a second part in a second adjacent circuit.Type: ApplicationFiled: August 3, 2021Publication date: January 5, 2023Inventors: Huaixin XIAN, J. B. ZHANG, Yang ZHOU, Kai ZHOU, Qingchao MENG, Lei PAN
-
Patent number: 11537250Abstract: A touch panel and a manufacturing method thereof, and a display device are provided. The touch panel includes a base substrate, the base substrate includes a touch area and a lead end area; the touch area is provided with a plurality of first electrodes and a plurality of second electrodes, and the second electrodes are intersected with and insulated from the first electrodes; a plurality of leads, electrically connected with the plurality of first electrodes and the plurality of second electrodes respectively, and connected to the lead end area (120), and the plurality of leads include a transparent conductive layer lead.Type: GrantFiled: October 23, 2017Date of Patent: December 27, 2022Assignees: Beijing BOE Technology Development Co., Ltd., Hefei Xinsheng Optoelectronics Technology Co., Ltd.Inventors: Qi Yin, Qingchao Meng, Tongsheng Fan, Zongyi Chen, Zhongqi Zhang
-
Publication number: 20220405456Abstract: An integrated circuit includes a clocking transistor, a first enabling transistor, a second enabling transistor, a branch-one transistor, a branch-two transistor, and a clock gating circuit. The first enabling transistor is coupled between the clocking transistor and a first node. The second enabling transistor is coupled between the clocking transistor and a second node. The branch-one transistor is coupled between a first power supply and the first node. The gate terminal of the branch-one transistor is electrically connected to the second node. The branch-two transistor is coupled between the first power supply and the second node. The gate terminal of the branch-two transistor is electrically connected to the first node. The clock gating circuit for generating a gated clock signal receives a latch output signal which is latched to a logic level of either a first node signal or a second node signal.Type: ApplicationFiled: June 29, 2021Publication date: December 22, 2022Inventors: Huaixin XIAN, Liu HAN, Jing DING, Qingchao MENG
-
Publication number: 20220399326Abstract: An integrated circuit (IC) structure includes a continuous well including first through third well portions. The continuous well is one of an n-well or a p-well, the first well portion extends in a first direction, the second well portion extends from the first well portion in a second direction perpendicular to the first direction, and the third well portion extends from the first well portion in the second direction parallel to the second well portion.Type: ApplicationFiled: November 16, 2021Publication date: December 15, 2022Inventors: Yang ZHOU, Liu HAN, Qingchao MENG, XinYong WANG, ZeJian CAI
-
Publication number: 20220393683Abstract: A method includes: forming first, second, and third NWs; forming form first to fourth transistors in corresponding first to fourth groups of active regions, connecting selected transistors amongst the first and second transistors to form first and second input circuits respectively receiving a first input signal in a first domain and a second input signal in the first domain; connecting selected transistors amongst the first and third transistors and amongst the first and fourth transistors to respectively form a first single bit level shifter (SBLS) and a second SBLS; each SBLS operates in the second domain and receives correspondingly versions of the first and second input signals; and connecting selected transistors amongst the first and third transistors to form a control circuit for toggling the first and second SBLSs between a normal and a standby state, a portion of the control circuit and the first SBLS sharing the second NW.Type: ApplicationFiled: August 10, 2022Publication date: December 8, 2022Inventors: Jing DING, Zhang-Ying YAN, Qingchao MENG, Yi-Ting CHEN
-
Publication number: 20220375920Abstract: An integrated circuit (IC) device includes at least one delay circuit having an input and an output, and an output connector electrically coupled to the output. The delay circuit further includes a plurality of transistors electrically coupled with each other between the input and the output. The plurality of transistors is configured to delay an input signal received at the input to generate a delayed signal at the output. The output is in a first metal layer. The output connector includes a first conductive pattern in the first metal layer, and a second conductive pattern in a second metal layer different from the first metal layer. The second conductive pattern electrically couples the output to the first conductive pattern.Type: ApplicationFiled: June 3, 2021Publication date: November 24, 2022Inventors: Huaixin XIAN, Yang ZHOU, Qingchao MENG
-
Publication number: 20220360253Abstract: A method of forming a semiconductor device includes forming active regions, forming S/D regions, forming MD contact structures and forming gate lines resulting in corresponding transistors that define a first time delay circuit having a first input configured to receive a first clock signal and having a first output configured to generate a second clock signal from the first clock signal; and corresponding transistors that define a second time delay circuit having a second input configured to receive the second clock signal and having a second output configured to generate a third clock signal from the first clock signal; forming a first gate via-connector in direct contact with the first gate line atop the first-type active region in the first area; and forming a second gate via-connector in direct contact with the second gate line atop the second-type active region in the second area.Type: ApplicationFiled: July 26, 2022Publication date: November 10, 2022Inventors: Huaixin XIAN, Qingchao MENG, Yang ZHOU, Shang-Chih HSIEH
-
Patent number: 11469743Abstract: An integrated circuit includes a first time delay circuit, a second time delay circuit, and a master-slave flip-flop having a gated input circuit and a transmission gate. The first time delay circuit has a first input configured to receive a first clock signal and having a first output configured to generate a second clock signal. The second time delay circuit has a second input configured to receive the second clock signal and having a second output configured to generate a third clock signal. The transmission gate is configured to receive the first clock signal and the second clock signal to control a transmission state of the transmission gate. The gated input circuit is configured to have an input transmission state controlled by the third clock signal at the second output of the second time delay circuit.Type: GrantFiled: April 29, 2021Date of Patent: October 11, 2022Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., TSMC NANJING COMPANY, LIMITEDInventors: Huaixin Xian, Qingchao Meng, Yang Zhou, Shang-Chih Hsieh
-
Publication number: 20220321108Abstract: An integrated circuit includes a first time delay circuit, a second time delay circuit, and a master-slave flip-flop having a gated input circuit and a transmission gate. The first time delay circuit has a first input configured to receive a first clock signal and having a first output configured to generate a second clock signal. The second time delay circuit has a second input configured to receive the second clock signal and having a second output configured to generate a third clock signal. The transmission gate is configured to receive the first clock signal and the second clock signal to control a transmission state of the transmission gate. The gated input circuit is configured to have an input transmission state controlled by the third clock signal at the second output of the second time delay circuit.Type: ApplicationFiled: April 29, 2021Publication date: October 6, 2022Inventors: Huaixin XIAN, Qingchao MENG, Yang ZHOU, Shang-Chih HSIEH
-
Patent number: 11456744Abstract: A multi-bit level-shifter (MBLS) includes two or more input circuits correspondingly configured to operate in a first voltage domain. The MBLS also includes two or more single bit level shifters (SBLSs) electrically coupled correspondingly to the two or more input circuits, and correspondingly configured to operate in a second voltage domain. The MBLS also includes a control circuit configured to toggle each of the two or more SBLSs between a normal mode and a standby mode according to a toggle-control signal received from the control circuit.Type: GrantFiled: June 15, 2021Date of Patent: September 27, 2022Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., TSMC NANJING COMPANY, LIMITEDInventors: Jing Ding, Zhang-Ying Yan, Qingchao Meng, Yi-Ting Chen
-
Patent number: 11209864Abstract: A flexible touch panel includes a flexible substrate including a flexible substrate body and at least one flexible substrate extension, in which the flexible substrate body is contiguous with the at least one flexible substrate extension. A plurality of touch units are provided on the flexible substrate body. A plurality of signal lines are disposed on the flexible substrate and electrically connected to the plurality of touch units. Each of the plurality of signal lines includes a first portion on the flexible substrate body and a second portion on the flexible substrate extension, so that each of the plurality of signal lines directly connects to an external driving circuit, and some of the plurality of signal lines include a material different from others of the plurality of signal lines.Type: GrantFiled: September 12, 2019Date of Patent: December 28, 2021Assignees: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.Inventors: Yichuan Tan, Yuxiang Ma, Qi Yin, Jian Xu, Li Ma, Tongsheng Fan, Xiaosuo Ma, Qingchao Meng
-
Publication number: 20210165525Abstract: A touch panel and a manufacturing method thereof, and a display device are provided. The touch panel includes a base substrate, the base substrate includes a touch area and a lead end area; the touch area is provided with a plurality of first electrodes and a plurality of second electrodes, and the second electrodes are intersected with and insulated from the first electrodes; a plurality of leads, electrically connected with the plurality of first electrodes and the plurality of second electrodes respectively, and connected to the lead end area, and the plurality of leads include a transparent conductive layer lead.Type: ApplicationFiled: October 23, 2017Publication date: June 3, 2021Applicants: BOE Technology Group Co., Ltd., Hefei Xinsheng Optoelectronics Technology Co., Ltd.Inventors: Qi Yin, Qingchao Meng, Tongsheng Fan, Zongyi Chen, Zhongqi Zhang
-
Patent number: 10788944Abstract: A touch display panel, a method of manufacturing the touch display panel, and a display apparatus with the touch display panel are disclosed. The touch display panel includes: a substrate; a plurality of first electrically conducting wires disposed over the substrate; and a first point pattern which is connected to at least one of the plurality of first electrically conducting wires, has a point facing outwards, and is configured to discharge a static electricity on the at least one of the plurality of first electrically conducting wires by a point discharge.Type: GrantFiled: April 19, 2019Date of Patent: September 29, 2020Assignees: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.Inventors: Fangzhi Du, Ruitao Song, Gongping Zhao, Qingchao Meng
-
Publication number: 20200104012Abstract: A touch display panel, a method of manufacturing the touch display panel, and a display apparatus with the touch display panel are disclosed. The touch display panel includes: a substrate; a plurality of first electrically conducting wires disposed over the substrate; and a first point pattern which is connected to at least one of the plurality of first electrically conducting wires, has a point facing outwards, and is configured to discharge a static electricity on the at least one of the plurality of first electrically conducting wires by a point discharge.Type: ApplicationFiled: April 19, 2019Publication date: April 2, 2020Inventors: Fangzhi Du, Ruitao Song, Gongping Zhao, Qingchao Meng