Abstract: A full-automatic detection apparatus and system for important zoonotic pathogen, and a control method therefor. The full-automatic detection apparatus for important zoonotic pathogen includes: a base capable of moving; an air collection device, configured to collect a to-be-detected sample in air along with the movement of the base; a nucleic acid detection and analysis device, configured to detect the to-be-detected sample collected by the air collection device to determine whether an infectious pathogen exists in the to-be-detected sample; an intelligent mobile device, configured to plan and control a moving path of the base; and a control device, configured to control the intelligent mobile device to plan and control the moving path of the base and to control a sampling period of the air collection device according to a control instruction of the terminal, and transmit a detection result from the nucleic acid detection and analysis device to the terminal.

Abstract: Semiconductor devices include a silicon carbide drift region having an upper portion and a lower portion. A first contact is on the upper portion of the drift region and a second contact is on the lower portion of the drift region. The drift region includes a superjunction structure that includes a p-n junction that is formed at an angle of between 10° and 30° from a plane that is normal to a top surface of the drift region. The p-n junction extends within +/?1.5° of a crystallographic axis of the silicon carbide material forming the drift region.

Abstract: A cryoballoon control device (2), catheter system and temperature display method are disclosed. The control device (2) acquires a plurality of balloon circumference temperature values obtained by circumference temperature sensors (4) circumferentially disposed on a cryoballoon (1) and a balloon center temperature value obtained from a center temperature sensor (5) disposed at a center of the cryoballoon (1) and, automatically adjusts a flow rate of a coolant introduced into the cryoballoon (1) based on a comparison between a preset balloon temperature value and a comparative temperature value, to enable a temperature adjustment to the cryoballoon (1), wherein the comparative temperature value is the balloon center temperature value, any one of the balloon circumference temperature values, or a computational temperature value derived by a predefined algorithm from the plurality of balloon circumference temperature values.

Abstract: Provided herein are in vitro methods of assaying an in vivo level of high molecular weight (HMW) species of a therapeutic protein. In exemplary embodiments, the method comprises (a) incubating a mixture comprising (i) a sample comprising the therapeutic protein and (ii) serum, or a depleted fraction thereof; and (b) assaying the level of HMW species of the therapeutic protein present in the mixture at one or more time points after step (a). Also methods of determining the in vivo reversibility of HMW species of a therapeutic protein are provided herein. In exemplary instances, the method comprises (A) assaying the in vivo level of high molecular weight (HMW) species of a therapeutic protein according to a presently disclosed in vitro method, and (B) comparing the level(s) of HMW species present in the mixture to the level of HMW species present in the sample prior to the incubating step.

Abstract: An ablation system and a nerve detection device thereof are provided. The nerve detection device includes a power supply module, a computation and control module, an energy generation module and a blood pressure monitoring module. The energy generation module connects to a detecting catheter and to detect a given site in an artery by outputting first energy to the detecting catheter. The blood pressure monitoring module connects to a blood pressure sensor monitoring a patients blood pressure prior to and during the detecting of the given site by the energy generation module with the first energy and to output the blood pressure monitoring result, and further transmitting the blood pressure monitoring result to the computation and control module. The computation and control module determines, based on the blood pressure monitoring result, whether there is an ablation target at the given site.

Abstract: Semiconductor structures and fabrication methods thereof are provided. The method includes: providing a substrate, the substate having a first opening; forming a first epitaxial layer in the first opening, the first epitaxial layer having a second opening; forming a stop layer on sidewall surfaces and a bottom surface of the second opening; forming a second epitaxial layer on a top surface of the stop layer; after forming the second epitaxial layer, forming a dielectric layer on the substrate, the dielectric layer having a third opening exposing a surface of the second epitaxial layer; forming a fourth opening in the second epitaxial layer by etching the second epitaxial layer exposed by the third opening until the stop layer is exposed; and forming a contact layer on sidewall surfaces and a bottom surface of the fourth opening by performing a semiconductor metallization process.

Abstract: Provided herein are methods of modulating Fc gamma Receptor (Fc?R)-mediated cytotoxicity of an antibody composition. In exemplary embodiments, the method comprises (1) increasing or decreasing the amount of terminal ?-galactose at the N-297 glycosylation site of panitumumab, or increasing or decreasing the amount of panitumumab molecules that comprise G1, G1a, G1b and/or G2 galactosylated glycan at the N-297 site, (2) increasing or decreasing the amount of panitumumab molecules that comprise fucosylated glycan at the N-297 site, or increasing or decreasing the amount of panitumumab molecules that comprise afucosylated glycan at the N-297 site, and (3) increasing or decreasing the amount of panitumumab molecules that comprise a high-mannose glycan at the N-297 site.

Abstract: The present disclosure provides a method of controlling the Antibody Dependent Cellular Cytotoxicity (ADCC) activity of a glycosylated and afucosylated IgG1 antibody composition. In exemplary embodiments, the method includes (1) determining the ADCC activity of a glycosylated and afucosylated IgG1 antibody composition; and (2) increasing or decreasing the ADCC activity of the IgG1 antibody composition by increasing or decreasing the amount of terminal ?-galactose in the afucosylated glycan species at the consensus glycosylation site. Related methods of matching ADCC activity of a reference glycosylated and afucosylated IgG1 antibody composition and methods of engineering a specific target ADCC activity of a glycosylated and afucosylated IgG1 antibody composition are further provided herein.

Abstract: Disclosed relates to a method and an apparatus for analyzing an ECG signal, an electrophysiological signal recorder, a three-dimensional mapping system, and a computer device. The method includes: acquiring (S202) N first intracardiac electrical signals in a region of interest or at a reference point/in a reference region; generating (S204) a first comparison signal spectrogram according to the N first intracardiac waveforms; acquiring (S206) M second intracardiac electrical signals at the point of interest to acquire M second intracardiac waveforms; generating (S208) a second comparison signal spectrogram according to the M second intracardiac waveforms; performing (S210) a comparative analysis on the first comparison signal spectrogram and the second comparison signal spectrogram and generating a comparative analysis result; and outputting (S212) prompt information indicating whether the point of interest is a focal point according to the comparative analysis result.

Abstract: Semiconductor devices include a silicon carbide drift region having an upper portion and a lower portion. A first contact is on the upper portion of the drift region and a second contact is on the lower portion of the drift region. The drift region includes a superjunction structure that includes a p-n junction that is formed at an angle of between 10° and 30° from a plane that is normal to a top surface of the drift region. The p-n junction extends within +/?1.5° of a crystallographic axis of the silicon carbide material forming the drift region.

Abstract: Power switching devices include a semiconductor layer structure that has an active region and an inactive region. The active region includes a plurality of unit cells and the inactive region includes a field insulating layer on the semiconductor layer structure and a gate bond pad on the field insulating layer opposite the semiconductor layer structure. A gate insulating pattern is provided on the semiconductor layer structure between the active region and the field insulating layer, and at least one source/drain contact is provided on the semiconductor layer structure between the gate insulating pattern and the field insulating layer.

Abstract: A determination device (100) for determining the origin of an arrhythmia and a mapping system (200) are disclosed. In the determination device (100), an analysis unit (120) is configured to process ECG data extracted over a predetermined period of time by a data extracting unit (110) and input the processed data into a determination model (131), where a calculation is performed thereon to produce origin information about the origin. An output unit (140) is configured to output the origin information, and a model configuration unit (130) is configured to configure the determination model (131). The determination device (100) allows identifying a cardiac site suitable for focused mapping, thereby dispensing with the need to map the whole heart and shortening the time required for mapping. The mapping system (200) includes the determination device (100).

Abstract: A power MOSFET includes a silicon carbide drift region having a first conductivity type, first and second well regions located in upper portions of the silicon carbide drift region that are doped with second conductivity dopants, and a channel region in a side portion of the first well region, an upper portion of the channel region having the first conductivity type, wherein a depth of the first well region is at least 1.5 microns and the depth of the first well region exceeds a distance between the first and second well regions.

Abstract: Semiconductor devices include a silicon carbide drift region having an upper portion and a lower portion. A first contact is on the upper portion of the drift region and a second contact is on the lower portion of the drift region. The drift region includes a superjunction structure that includes a p-n junction that is formed at an angle of between 10° and 30° from a plane that is normal to a top surface of the drift region. The p-n junction extends within +/?1.5° of a crystallographic axis of the silicon carbide material forming the drift region.

Abstract: A power module is disclosed that includes a housing with an interior chamber wherein multiple switch modules are mounted within the interior chamber. The switch modules comprise multiple transistors and diodes that are interconnected to facilitate switching power to a load. In one embodiment, at least one of the switch modules supports a current density of at least 10 amperes per cm2.

Abstract: Provided herein are methods of modulating Antibody Dependent Cellular Phagocytosis (ADCP) activity of an antibody composition. In exemplary embodiments, the method comprises modulating the amount of (a) galactosylated glycans of the antibody, (b) afucosylated glycans of the antibody, (c) high mannose glycans of the antibody, or (d) a combination thereof, to modulate ADCP activity of the antibody, as further described herein.

Abstract: An ablation lesion assessment method and system for obtaining ablation information by analyzing an intracardiac electrode signal from an ablation lesion are disclosed. The ablation lesion assessment system includes: a baseline calculation unit for generating a baseline for a signal profile and calculating a proportion of portions of the signal profile located above the baseline in the whole signal profile; a waveform comparison unit for obtaining a waveform comparison result by comparing the signal profile with an ablation pattern; and a determining unit for making a determination based on the proportion and the waveform comparison result and outputting the ablation information that indicates whether complete ablation has been achieved. The ablation lesion assessment method can utilize the ablation lesion assessment system to obtain the ablation information that indicates whether complete ablation has been achieved.

Abstract: Semiconductor structures and fabrication methods thereof are provided. The method includes: providing a substrate, the substate having a first opening; forming a first epitaxial layer in the first opening, the first epitaxial layer having a second opening; forming a stop layer on sidewall surfaces and a bottom surface of the second opening; forming a second epitaxial layer on a top surface of the stop layer; after forming the second epitaxial layer, forming a dielectric layer on the substrate, the dielectric layer having a third opening exposing a surface of the second epitaxial layer; forming a fourth opening in the second epitaxial layer by etching the second epitaxial layer exposed by the third opening until the stop layer is exposed; and forming a contact layer on sidewall surfaces and a bottom surface of the fourth opening by performing a semiconductor metallization process.

Abstract: A transistor device having a deep recessed P+ junction is disclosed. The transistor device may comprise a gate and a source on an upper surface of the transistor device, and may include at least one doped well region, wherein the at least one doped well region has a first conductivity type that is different from a conductivity type of a source region within the transistor device and the at least one doped well region is recessed from the upper surface of the transistor device by a depth. The deep recessed P+ junction may be a deep recessed P+ implanted junction within a source contact area. The deep recessed P+ junction may be deeper than a termination structure in the transistor device. The transistor device may be a Silicon Carbide (SiC) MOSFET device.

Abstract: A Schottky diode is disclosed that includes a silicon carbide substrate, a silicon carbide drift layer, a Schottky contact, and a passivation structure. The silicon carbide drift layer provides an active region and an edge termination region about the active region. The Schottky contact has sides and a top extending between the two sides and includes a Schottky layer over the active region and an anode contact over the Schottky layer. The passivation structure covers the edge termination region, the sides of the Schottky contact, and at least a portion of the top of the Schottky contact. The passivation structure includes a first silicon nitride layer, a silicon dioxide layer over the first silicon nitride layer, and a second silicon nitride layer over the silicon dioxide layer.