Abstract: Nano-scale structures are provided wherein nano-structures are formed on a substrate surface and a base material is applied between the nano-structures.

Abstract: A method of forming a nano-structured substrate is provided, the method comprising including forming non-integral nano-pillars on a substrate surface and directionally etching the substrate surface using the non-integral nano-pillars as a mask to form integral nano-structures in the substrate.

Abstract: A method of forming a nano-structure (100?) involves forming a multi-layered structure (10) including an oxidizable material layer (14) established on a substrate (12), and another oxidizable material layer (16) established on the oxidizable material layer (14). The oxidizable material layer (14) is an oxidizable material having an expansion coefficient, during oxidation, that is more than 1. Anodizing the other oxidizable material layer (16) forms a porous anodic structure (16?), and anodizing the oxidizable material layer (14) forms a dense oxidized layer (14?) and nano-pillars (20) which grow through the porous anodic structure (16?) into pores (18) thereof. The porous structure (16?) is selectively removed to expose the nano-pillars (20). A surface (I) between the dense oxidized layer (14?) and a remaining portion of the oxidizable material layer (14) is anodized to consume a substantially cone-shaped portion (32) of the nano-pillars (20) to form cylindrical nano-pillars (20?).

Abstract: A method of forming a micro-structure (100, 100?, 100?, 100??) involves forming a multi-layered structure (10) including i) an oxidizable material layer (14) on a substrate (12) and ii) another oxidizable material layer (16) on the oxidizable material layer (14). The oxidizable material layer (14) is formed of an oxidizable material having an expansion coefficient, during oxidation, that is more than 1. The method further involves forming a template (16?), including a plurality of pores (18), from the other oxidizable material layer (16), and growing a nano-pillar (20) inside each pore (18). The nano-pillar (18) has a predefined length (L) that terminates at an end (21). A portion of the template (16?) is selectively removed to form a substantially even plane (23) that is oriented in a position opposed to the substrate (12).

Abstract: A method of forming a nano-structure (100, 100?) includes forming a multi-layered structure (10) including an oxidizable material layer (14) established on a substrate (12), and another oxidizable material layer (16) established on the oxidizable material layer (14). The oxidizable material layer (14) is an oxidizable material having an expansion coefficient, during oxidation, that is more than 1. A template (16?), including a plurality of pores (18), is formed out of the other oxidizable material layer (16). An oxide structure (14?) is grown from the oxidizable material layer (14) through each of the pores (18) and over a template surface. Growing the oxide structure (14?) includes forming an individual nano-pillar (20) inside each of the pores (18) that is oriented in a position that is substantially normal to the substrate (12).

Abstract: A nano-structure (100, 100?) includes an oxidized layer (14?), and at least two sets (24, 24?) of super nano-pillars (20) positioned on the oxidized layer (14?). Each of the at least two sets (24, 24?) of super nano-pillars (20) includes a plurality of super nano-pillars (20), where each set (24, 24?) is separated a spaced distance from each other set (24, 24?).

Abstract: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized Nanodetector devices are described.

Abstract: A fluid ejection device includes a chamber, and first and second electrodes configured to generate an electric field within the chamber. A related method includes, in a firing chamber, separating whole ink into colloidal particles and ink vehicle such that the firing fluid within the chamber comprises primarily ink vehicle.

Abstract: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized Nanodetector devices are described.

Abstract: A fluid ejection device includes a chamber, and first and second electrodes configured to generate an electric field within the chamber. A related method includes, in a firing chamber, separating whole ink into colloidal particles and ink vehicle such that the firing fluid within the chamber comprises primarily ink vehicle.

Abstract: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.

Abstract: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.

Abstract: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.

Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.

Abstract: Methodologies associated with fabricating aligned nanowire lattices are described. One exemplary method embodiment includes providing a twist wafer bonded thin single crystal semiconductor film and a bulk single crystal substrate of the same material. Periodic non-uniform elastic strains present on the surface of the film control the positions where nanocrystals will form on the film. The strains may be removed via annealing and alloying after the formation of nanocrystal arrays.

Abstract: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.

Abstract: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.

Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.

Abstract: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.

Abstract: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.