Abstract: By adding particles of high thermal conductivity and low thermal expansion coefficient into the copper as a composite material and filling with the composite material into the through-via hole, the mismatch of the coefficient of thermal expansion and the stress of the through-silicon via are lowered and the thermal conductivity of the through-silicon via is increased.

Abstract: A heat-pipe electric power generating device includes a heat pipe having an evaporating end and a condensing end, a non-magnetic shell connected to the condensing end, a generator stator coil disposed at the outer of the non-magnetic shell, a turbine disposed in the heat pipe, a driving axle connected to the turbine and extended into the non-magnetic shell, and a magnetic element disposed at the driving axle and located in the non-magnetic shell. A vapor flow flowing to the condensing end is generated at the evaporating end. The vapor flow drives the turbine to move the magnetic element, such that the generator stator coil generates an induced current. In addition, a hydrogen/oxygen gas generating apparatus and an internal combustion engine system having the heat-pipe electric power generating device are also provided.

Abstract: A heat-pipe electric power generating device including a fan disposed between an evaporating end and a condensing end of a heat-pipe is provided. A magnetic substance is disposed on the fan to form a magnetic field. A stator coil of a generator is disposed at the outer of the heat-pipe, which is corresponding to the position of the fan. An induced current is generated by the stator coil of the generator when the magnetic substance spins. Since the heat-pipe is made of copper, and the magnetic field is not shielded by copper, a current is induced when a relative motion between the magnetic substance on the fan and the stator coil of the generator at the outer of the heat-pipe is generated. Further, the heat-pipe electric power generating device can be applied on a hydrogen/oxygen gas generating apparatus and an internal combustion engine system of a motor vehicle.

Abstract: A light-emitting device may include a heat-dissipating base, a light-emitting unit, a housing, and a first conductive contact and a second conductive contact. The heat-dissipating base has a top portion and a bottom portion. The bottom portion of the heat-dissipating base may include an exposed heat-dissipation surface. The light-emitting unit is over the top portion of the heat-dissipating base and is arranged to provide heat conductivity at least from the light-emitting unit to the heat-dissipating base. The light-emitting unit may include at least one light-emitting diode for emitting light and a first electrode and a second electrode. Heat may be generated as the light-emitting diode emits light, and the at least one light-emitting diode may have power input terminals for receiving power input to the at least one light-emitting diode. The power input may include one of an alternating-current input and a direct-current input.

Abstract: A fabricating method and a testing method of a semiconductor device and a mechanical integrity testing apparatus are provided. An object includes a wafer, an insulating layer, and a plurality of conductive posts is provided. A surface of the wafer has a plurality of first blind holes outside chip regions and a plurality of second blind holes inside the chip regions. The insulating layer is between the conductive posts and the walls of the first blind holes and between the conductive posts and the walls of the second blind holes. A mechanical integrity test is performed to test a binding strength between the insulating layer, the conductive posts, and the walls of the first blind holes. The conductive posts in the chip regions are electrically connected to an element after the conductive posts in the first blind holes are qualified in the mechanical integrity test.

Abstract: An electronic device packaging structure is provided. The semiconductor device includes a semiconductor base, an emitter, a collector, and a gate. The emitter and the gate are disposed on a first surface of the semiconductor base. The collector is disposed on a second surface of the semiconductor base. A first passivation layer is located on the first surface of the semiconductor base surrounding the gate. A first conductive pad is disposed on the first passivation layer. A second conductive pad is disposed on the collector on the second surface. At least one conductive through via structure penetrates the first passivation layer, the first and second surfaces of the semiconductor base, and the collector to electrically connect the first and second conductive pads.

Abstract: By adding particles of high thermal conductivity and low thermal expansion coefficient into the copper as a composite material and filling with the composite material into the through-via hole, the mismatch of the coefficient of thermal expansion and the stress of the through-silicon via are lowered and the thermal conductivity of the through-silicon via is increased.

Abstract: A circuit board structure and a manufacturing method thereof are provided. The circuit board structure includes a composite substrate, a dielectric layer, and a circuit layer. The composite substrate includes a metal substrate doped with non-metal powders and a metal buffer layer. A surface of the metal buffer layer opposite to the other surface of the metal buffer layer in contact with the metal substrate is treated by a polishing process. The dielectric layer is formed on the polished surface of the metal buffer layer, and the circuit layer is formed on the dielectric layer. Alternatively, a barrier layer is interposed between the dielectric layer and the metal buffer layer for preventing a diffusion effect of the metal buffer layer.

Abstract: A heat-pipe electric-power generating device capable of converting thermal energy to electrical energy is provided. The device includes a heat pipe and the heat pipe has a sealed internal space that can produce a steam-flow from an evaporating end to a condensing end according to a pressure difference caused by a temperature difference between the ends. A steam-flow electric-power generating device has at least a rotating portion disposed in the internal space for generating electric power when driven by a steam-flow. An electrode structure is used for leading the electric power out. The heat pipe is maintained in a sealed condition. In addition, several heat-pipe electric-power generating devices can be arranged into an array to form a heat electric-power generator or disposed inside an apparatus with a heat source for recycling the conventional waste thermal energy into useful electrical energy.

Abstract: A test structure including a substrate, at least one conductive plug, a first conductive trace and a second conductive trace is provided. The substrate has a first area and a second area. The at lest one conductive plug is disposed in the substrate in the first area, wherein the conductive plug does not penetrate through the substrate. The first conductive trace is disposed on the conductive plug and on the substrate in the first area. The second conductive trace is disposed on the substrate in the second area. It is noted that the first conductive trace and the second conductive trace have the same material and the same shape. A measurement method of the above-mentioned test structure is also provided.

Abstract: A heat dissipation structure for an electronic device includes a body having a first surface and a second surface opposite to the first surface. A silicon-containing insulating layer is disposed on the first surface of the body. An ultrananocrystalline diamond film is disposed on the silicon-containing insulating layer. A first conductive pattern layer is disposed on the silicon-containing insulating layer and enclosed by the ultrananocrystalline diamond film, wherein the ultrananocrystalline diamond film and the first conductive pattern layer do not overlap with each other as viewed from a top-view perspective. A method for fabricating a heat dissipation structure for an electronic device and an electronic package having the heat dissipation structure are also disclosed.

Abstract: An internal combustion engine system including an electric power generating device, a container, a set of positive and negative electrodes and an internal combustion engine is provided. The container contains an electrolytic solution and has a gas outlet. The set of positive and negative electrodes are disposed within the electrolytic solution in the container, wherein the set of positive and negative electrodes are electrically connected to a first power output end and a second power output end of the electric power generating device, respectively. The internal combustion engine is connected to the gas outlet, wherein a gas product directed from the gas outlet is used as a fuel of the internal combustion engine. Further, the electric power generating device can be applied on a hydrogen/oxygen gas generating apparatus and integrated into the internal combustion engine system of a motor vehicle.

Abstract: A novel three dimensional wafer stack and the manufacturing method therefor are provided. The three dimensional wafer stack includes a first wafer having a first substrate and a first device layer having thereon at least one chip, a second wafer disposed above the first wafer and having a second substrate, and at least one pedestal arranged between and extending from the first substrate to the second substrate. The pedestal arranged in the device layer is used for preventing the low-k materials existing in the device layer from being damaged by the stresses.

Abstract: A semiconductor device including a silicon substrate, a plurality of silicon nanowire clusters, a first circuit layer and a second circuit layer. The silicon substrate has a first surface, a second surface opposite to the first surface and a plurality of through holes. The silicon nanowire clusters are disposed in the through holes of the silicon substrate, respectively. The first circuit layer is disposed on the first surface and connected to the silicon nanowire clusters. The second circuit layer is disposed on the second surface and connected to the silicon nanowire clusters.

Abstract: A fabricating method and a testing method of a semiconductor device and a mechanical integrity testing apparatus are provided. An object includes a wafer, an insulating layer, and a plurality of conductive posts is provided. A surface of the wafer has a plurality of first blind holes outside chip regions and a plurality of second blind holes inside the chip regions. The insulating layer is between the conductive posts and the walls of the first blind holes and between the conductive posts and the walls of the second blind holes. A mechanical integrity test is performed to test a binding strength between the insulating layer, the conductive posts, and the walls of the first blind holes. The conductive posts in the chip regions are electrically connected to an element after the conductive posts in the first blind holes are qualified in the mechanical integrity test.

Abstract: A novel three dimensional wafer stack and the manufacturing method therefor are provided. The three dimensional wafer stack includes a first wafer having a first substrate and a first device layer having thereon at least one chip, a second wafer disposed above the first wafer and having a second substrate, and at least one pedestal arranged between and extending from the first substrate to the second substrate. The pedestal arranged in the device layer is used for preventing the low-k materials existing in the device layer from being damaged by the stresses.

Abstract: A heat dissipation structure for an electronic device includes a body having a first surface and a second surface opposite to the first surface. A silicon-containing insulating layer is disposed on the first surface of the body. A chemical vapor deposition (CVD) diamond film is disposed on the silicon-containing insulating layer. A first conductive pattern layer is disposed on the silicon-containing insulating layer, wherein the first conductive pattern layer is enclosed by and spaced apart from the CVD diamond film. A method for fabricating a heat dissipation structure for an electronic device and an electronic package having the heat dissipation structure are also disclosed.

Abstract: A measuring apparatus including a first chip, a first circuit layer, a first heater, a first stress sensor and a second circuit layer is provided. The first chip has a first through silicon via, a first surface and a second surface opposite to the first surface. The first circuit layer is disposed on the first surface. The first heater and the first stress sensor are disposed on the first surface and connected to the first circuit layer. The second circuit layer is disposed on the second surface. The first heater comprises a plurality of first switches connected in series to generate heat.

Abstract: An interconnect structure with stress buffering ability is disclosed, which comprises: a first surface, connected to a device selected form the group consisting of a substrate and an electronic device; a second surface, connected to a device selected form the group consisting of the substrate and the electronic device; a supporting part, sandwiched between and interconnecting the first and the second surfaces while enabling the areas of the two ends of the supporting part to be small than those of the first and the second surfaces in respective; and a buffer, arranged surrounding the supporting part for absorbing and buffering stresses.

Abstract: An LED lamp includes LED chips, an axle, and a lampshade. The LED chips are mounted on surface of the axle. The axle which is coupled to the lampshade includes heat pipes for transferring the heat generated by the LED chips to exterior of the lampshade and obtaining a better heat dissipation.