Abstract: A sensor device includes a current conductor designed to carry a measurement current, and a magnetic field sensor chip having a sensor element, wherein the magnetic field sensor chip is designed to detect a magnetic field at the location of the sensor element. The sensor device furthermore includes an encapsulation material, wherein the magnetic field sensor chip is encapsulated by the encapsulation material, and a soft magnet secured to the encapsulation material and designed to concentrate the magnetic field at the location of the sensor element. The magnetic field sensor chip and the soft magnet are galvanically isolated from one another by the encapsulation material.

Abstract: A photoacoustic sensor includes a first layer with an optical MEMS emitter; a second layer stacked over the first layer with a MEMS pressure pick-up and an optically transparent window, wherein the MEMS pressure pick-up and the optically transparent window are offset laterally with respect to one another; and a third layer stacked over the second layer with a cavity for a reference gas. The optical MEMS emitter transmits optical radiation along an optical path, wherein the optical path runs through the optically transparent window and the cavity for the reference gas, and wherein the MEMS pressure pick-up is outside the course of the optical path.

Abstract: A sensor device contains a first magnetic field sensor chip having a first sensor element. The first magnetic field sensor chip is configured to detect a component of a magnetic field at the location of the first sensor element. The sensor device contains a second magnetic field sensor chip having a second sensor element. The second magnetic field sensor chip is configured to detect a component of a magnetic field at the location of the second sensor element. The sensor device contains a current conductor configured to carry a measurement current that induces a magnetic field at the locations of the sensor elements. The magnetic field sensor chips and the current conductor are arranged relative to one another in such a way that an influence of a homogeneous magnetic stray field on the first components is compensated for upon difference formation or summation applied to the first components.

Abstract: A sensor package including a metal carrier and a sensor chip arranged on the metal carrier and having a first sensor element. In an orthogonal projection of the sensor chip onto a surface of the metal carrier, at least two edge sections of the sensor chip are free of overlap with the surface of the metal carrier. The sensor chip is designed to detect a magnetic field induced by an electric current flowing through a current conductor.

Abstract: A photoacoustic sensor includes a first MEMS device and a second MEMS device. The first MEMS device includes a first MEMS component including an optical emitter, and a first optically transparent cover wafer-bonded to the first MEMS component, wherein the first MEMS component and the first optically transparent cover form a first closed cavity. The second MEMS device includes a second MEMS component including a pressure detector, and a second optically transparent cover wafer-bonded to the second MEMS component, wherein the second MEMS component and the second optically transparent cover form a second closed cavity.

Abstract: A sensor for parallel measurement of pressure and acceleration of a vehicle, including a substrate, a sensor element disposed on the substrate, a material being connected with the sensor element and being exposed to the environment of the sensor, wherein the material is configured to act as a seismic mass, and an electronic circuitry connected with the sensor element and including a first filter and a second filter, wherein the first and second filters have different filter characteristics so that an output of the first filter is representative for the pressure and an output of the second is representative for the acceleration.

Abstract: In the following, a sensor assembly is described. According to an exemplary embodiment, the sensor assembly has a housing enclosing a pressure chamber filled with a medium, the housing having a first housing part and a second housing part, the first housing part being connected to the second housing part to seal the pressure chamber in a pressure-tight manner A sensor chip is arranged in the pressure chamber, substantially surrounded by the medium, and configured to measure a pressure of the medium. The sensor assembly also includes a plurality of connection pins which are fed through the first housing part (carrier) by pressure-tight bushings and which are electrically connected to the sensor chip. The sensor assembly also has stress relieving structures which are configured to mechanically decouple the first housing part and a pressure-sensitive element of the sensor chip.

Abstract: A photoacoustic sensor includes a first MEMS device and a second MEMS device. The first MEMS device includes a first MEMS component including an optical emitter, and a first optically transparent cover wafer-bonded to the first MEMS component, wherein the first MEMS component and the first optically transparent cover form a first closed cavity. The second MEMS device includes a second MEMS component including a pressure detector, and a second optically transparent cover wafer-bonded to the second MEMS component, wherein the second MEMS component and the second optically transparent cover form a second closed cavity.

Abstract: A sensor apparatus comprises an electrically conductive chip carrier comprising a busbar, a first connection and a second connection, and a differential magnetic field sensor chip which is arranged on the chip carrier and has two sensor elements. The form of the busbar is such that a measurement current path running from the first connection to the second connection through the busbar comprises a main current path and a bypass current path, wherein the main current path and the bypass current path run parallel to one another, and a bypass current flowing through the bypass current path is less than a main current flowing through the main current path. The magnetic field sensor chip is configured to capture a magnetic field induced by the bypass current.

Abstract: An ultrasonic touch sensor is proposed for attachment to a casing, having a semiconductor chip including a substrate side and a component side, the semiconductor chip including an ultrasonic transducer element and the ultrasonic transducer element being arranged on the component side, having an acoustic coupling medium covering the semiconductor chip at least in the region of the ultrasonic transducer element, having electrical contact elements for controlling the ultrasonic transducer element, and the electrical contact elements being arranged on the component side of the semiconductor chip.

Abstract: A gas sensor comprises a sensor element for the detection of a gas, an encapsulation, which surrounds the sensor element and has an opening for a gas to be detected to pass through to the sensor element, and a flame arrester, which is arranged in the opening of the encapsulation.

Abstract: What is proposed is a current sensor comprising a current rail and comprising a magnetic field sensor, wherein the magnetic field sensor is configured to measure a magnetic field induced by a current flowing through the current rail, wherein a first insulation layer and a second insulation layer are arranged between the current rail and the magnetic field sensor, wherein an interface between the first insulation layer and the second insulation layer is free of a contact with the current rail and/or is free of a contact with the magnetic field sensor.

Abstract: A sensor device includes a current conductor designed to carry a measurement current, and a magnetic field sensor chip having a sensor element, wherein the magnetic field sensor chip is designed to detect a magnetic field at the location of the sensor element. The sensor device furthermore includes an encapsulation material, wherein the magnetic field sensor chip is encapsulated by the encapsulation material, and a soft magnet secured to the encapsulation material and designed to concentrate the magnetic field at the location of the sensor element. The magnetic field sensor chip and the soft magnet are galvanically isolated from one another by the encapsulation material.

Abstract: A semiconductor device includes a chip carrier, a first semiconductor chip arranged on the chip carrier, the first semiconductor chip being located in a first electrical potential domain when the semiconductor device is operated, a second semiconductor chip arranged on the chip carrier, the second semiconductor chip being located in a second electrical potential domain different from the first electrical potential domain when the semiconductor device is operated, and an electrically insulating structure arranged between the first semiconductor chip and the second semiconductor chip, which is designed to galvanically isolate the first semiconductor chip and the second semiconductor chip from each other.

Abstract: A gas sensor comprises a substrate, a first semiconductor-based sensor element for determining the density and/or viscosity of a gas, which element is arranged above the substrate and which has a resonant element, and a cover arranged above the first sensor element, wherein the substrate and/or the cover has an opening to allow the passage of a gas to the first sensor element.

Abstract: A sensor device comprises a dielectric substrate, a busbar mechanically connected to the dielectric substrate, a cavity formed in the dielectric substrate, and a sensor chip arranged in the cavity, wherein the sensor chip is designed to detect a magnetic field induced by an electric current flowing through the busbar, wherein in an orthogonal projection of the sensor chip onto the busbar, the sensor chip at least partly overlaps the busbar.

Abstract: A semiconductor device includes a chip carrier, a first semiconductor chip arranged on the chip carrier, the first semiconductor chip being located in a first electrical potential domain when the semiconductor device is operated, a second semiconductor chip arranged on the chip carrier, the second semiconductor chip being located in a second electrical potential domain different from the first electrical potential domain when the semiconductor device is operated, and an electrically insulating structure arranged between the first semiconductor chip and the second semiconductor chip, which is designed to galvanically isolate the first semiconductor chip and the second semiconductor chip from each other.

Abstract: A sensor package including a metal carrier and a sensor chip arranged on the metal carrier and having a first sensor element. In an orthogonal projection of the sensor chip onto a surface of the metal carrier, at least two edge sections of the sensor chip are free of overlap with the surface of the metal carrier. The sensor chip is designed to detect a magnetic field induced by an electric current flowing through a current conductor.

Abstract: A gas sensor includes a hollow space, a gas permeation structure which is arranged between the hollow space and the exterior space and contains a selectively gas-permeable element, wherein the hollow space is hermetically sealed with the exception of the gas permeation structure, and one or more sensor elements which are configured for detecting the presence of one or more gases in the hollow space.

Abstract: A pressure sensor comprises a housing, a flexible membrane which, together with the housing, forms a hermetically closed cavity, a sensor element arranged in the cavity, and a gaseous medium in the cavity.