Abstract: A semiconductor package may include a sensor chip to measure an amount of electrical current in a current medium. The sensor chip may include a first magnetic sensing element and a second magnetic sensing element. The semiconductor package may include a magnet that produces a magnetic field. The magnet may be arranged asymmetrically with respect to the first magnetic sensing element and the second magnetic sensing element such that a strength of the magnetic field at the first magnetic sensing element is different from a strength of the magnetic field at the second magnetic sensing element.

Abstract: A photoacoustic sensor device may include a housing and first and second ceramic cavity packages disposed in the housing. The first ceramic cavity package may include a first sidewall having a first set of electrical contact elements, a first cavity structure, and a light source electrically coupled to the first set of electrical contact elements. The second ceramic cavity package may include a second sidewall having a second set of electrical contact elements, a second cavity structure, and a photoacoustic detector electrically coupled to the second set of electrical contact elements. The first and second ceramic cavity packages may be arranged such that the light source and the photoacoustic detector face one another, and oriented such that the first and second sets of electrical contact elements align with electrical contact points of a PCB when the photoacoustic sensor device is positioned over the PCB for coupling to the PCB.

Abstract: A current sensor device may include a routable molded lead frame that includes a molded substrate. The current sensor device may include a conductor and a semiconductor chip mounted to the molded substrate. The semiconductor chip may include a magnetic field sensor that is galvanically isolated from the conductor by the molded substrate and is configured to sense a magnetic field created by current flowing through the conductor. The current sensor device may include one or more leads configured to output a signal generated by the semiconductor chip. The one or more leads may be galvanically isolated from the conductor by the molded substrate.

Abstract: The present disclosure is related to a photoacoustic sensor modular assembly. An example interconnect module includes a support structure configured to be situated between an emitter module of the photoacoustic sensor and a detector module of the photoacoustic sensor. The emitter module may include an emitter component and the detector module may include a detector component. The interconnect module may include a conductive element configured to connect to at least one of the emitter component or the detector component.

Abstract: Methods and devices related to current sensing are provided. Magnetoresistive sensor elements are provided on opposite sides of a conductor.

Abstract: A detector module is disclosed. In one example, the detector module is for a photo-acoustic gas sensor and comprises a first substrate made of a semiconductor material and comprising a first surface and a second surface opposite to the first surface, a second substrate comprising a third surface, a fourth surface opposite to the third surface, and a first recess formed in the fourth surface. The second substrate is connected with its fourth surface to the first substrate so that the first recess forms an airtight-closed first cell which is filled with a reference gas and a pressure sensitive element comprising a membrane disposed in contact with the reference gas. The detector module is further configured such that a beam of light pulses passes through the first substrate and thereby enters the first cell.

Abstract: A sensor package including a metal carrier and a sensor chip arranged on the metal carrier and having a first sensor element. In an orthogonal projection of the sensor chip onto a surface of the metal carrier, at least two edge sections of the sensor chip are free of overlap with the surface of the metal carrier. The sensor chip is designed to detect a magnetic field induced by an electric current flowing through a current conductor.

Abstract: A photoacoustic sensor device may include a housing and first and second ceramic cavity packages disposed in the housing. The first ceramic cavity package may include a first sidewall having a first set of electrical contact elements, a first cavity structure, and a light source electrically coupled to the first set of electrical contact elements. The second ceramic cavity package may include a second sidewall having a second set of electrical contact elements, a second cavity structure, and a photoacoustic detector electrically coupled to the second set of electrical contact elements. The first and second ceramic cavity packages may be arranged such that the light source and the photoacoustic detector face one another, and oriented such that the first and second sets of electrical contact elements align with electrical contact points of a PCB when the photoacoustic sensor device is positioned over the PCB for coupling to the PCB.

Abstract: A current sensor package, comprises a current path and a sensing device. The sensing device is spaced from the current path, and the sensing device is configured for sensing a magnetic field generated by a current flowing through the current path. Further, the sensing device comprises a sensor element. The sensing device is electrically connected to a conductive trace. An encapsulant extends continuously between the current path and the sensing device.

Abstract: A semiconductor device includes a substrate, a semiconductor die attached to the substrate, and an encapsulation material. The semiconductor die includes a sensing element. The encapsulation material encapsulates the semiconductor die and a portion of the substrate. The encapsulation material defines a through-hole to receive a conductive element. The sensing element may include a magnetic field sensor to sense a magnetic field generated by the conductive element.

Abstract: A photo-acoustic gas sensor is disclosed. The photo-acoustic gas sensor includes a substrate, a light emitter unit supported by the substrate, the light emitter unit including a light emitter configured to emit a beam of light pulses with a predetermined repetition frequency and wavelength corresponding to an absorption band of a gas to be sensed, and a detector unit supported by the substrate, the detector unit including a microphone, wherein the beam of light pulses traverses an area intended to accommodate the gas and the microphone can receive a signal oscillating with the repetition frequency.

Abstract: A packaged semiconductor device comprises a semiconductor chip and a semiconductor package.

Abstract: A semiconductor package may include a sensor chip to measure an amount of electrical current in a current medium. The sensor chip may include a first magnetic sensing element and a second magnetic sensing element. The semiconductor package may include a magnet that produces a magnetic field. The magnet may be arranged asymmetrically with respect to the first magnetic sensing element and the second magnetic sensing element such that a strength of the magnetic field at the first magnetic sensing element is different from a strength of the magnetic field at the second magnetic sensing element.

Abstract: A semiconductor device includes a substrate, a semiconductor die, and an antistatic die attach material between the substrate and the semiconductor die. The antistatic die attach material includes a mixture of a nonconductive adhesive material and carbon black or graphite. In one example, the antistatic die attach material has a resistivity between 101 ?·cm and 1010 ?·cm.

Abstract: A method is provided for producing a hermetically sealed housing having a semiconductor component. The method comprises introducing a housing having a housing body and a housing cover into a process chamber. The housing cover closes off a cavity of the housing body and is attached in a gas-tight manner to the housing body. At least one opening is formed in the housing. At least one semiconductor component is arranged in the cavity. The method furthermore comprises generating a vacuum in the cavity by evacuating the process chamber, and also generating a predetermined gas atmosphere in the cavity and the process chamber. The method moreover comprises applying sealing material to the at least one opening while the predetermined gas atmosphere prevails in the process chamber.

Abstract: A photo-acoustic gas sensor includes a light emitter unit having a light emitter configured to emit a beam of light pulses with a predetermined repetition frequency and a wavelength corresponding to an absorption band of a gas to be sensed, and a detector unit having a microphone. The light emitter unit is arranged so that the beam of light pulses traverses an area configured to accommodate the gas. The detector unit is arranged so that the microphone can receive a signal oscillating with the repetition frequency.

Abstract: A chip package, a chip package system, a method of manufacturing a chip package, and a method of operating a chip package including: a first sensor configured to measure a magnetic field component up to a maximum magnetic field value; a second sensor configured to measure the magnetic field component beyond the maximum magnetic field value; and a circuit coupled to the first sensor and the second sensor and configured to receive at least one sensor signal from at least one of the first sensor and the second sensor, wherein the circuit is further configured to select the first sensor or the second sensor to measure the magnetic field component based on the received sensor signal.

Abstract: Methods and devices related to current sensing are provided. Magnetoresistive sensor elements are provided on opposite sides of a conductor.

Abstract: A chip package, a chip package system, a method of manufacturing a chip package, and a method of operating a chip package including: a first sensor configured to measure a magnetic field component up to a maximum magnetic field value; a second sensor configured to measure the magnetic field component beyond the maximum magnetic field value; and a circuit coupled to the first sensor and the second sensor and configured to receive at least one sensor signal from at least one of the first sensor and the second sensor, wherein the circuit is further configured to select the first sensor or the second sensor to measure the magnetic field component based on the received sensor signal.

Abstract: A semiconductor device includes a substrate, a semiconductor die, and an antistatic die attach material between the substrate and the semiconductor die. The antistatic die attach material includes a mixture of a nonconductive adhesive material and carbon black or graphite. In one example, the antistatic die attach material has a resistivity between 101 ?·cm and 1010 ?·cm.