Abstract: The present disclosure relates to the field of fabricating microelectronic packages, wherein magnetic particles distributed within a solder paste may be used to form a magnetic intermetallic compound interconnect. The intermetallic compound interconnect may be exposed to a magnetic field, which can heat a solder material to a reflow temperature for attachment of microelectronic components comprising the microelectronic packages.

Abstract: Methods and associated structures of forming underfill material are described. Those methods may include applying an underfill to an interconnect structure comprising residue from a no clean flux, wherein the underfill comprises at least one of a functionalized nanofiller and a micron-sized filler.

Abstract: A clad solder thermal interface material is described. In one example the material has a a first layer of solder having a melting temperature lower than a temperature of a particular solder reflow furnace, a second layer of solder clad to the first layer of solder, the second layer having a melting temperature higher than the temperature of the solder reflow furnace, and a third layer of solder clad to the second layer of solder opposite the first layer, the third layer having a melting temperature lower than the temperature of the solder reflow furnace.

Abstract: A coating for a microelectronic device comprises a polymer film (131) containing a filler material (232). The polymer film has a thermal conductivity greater than 3 W/m·K and a thickness (133) that does not exceed 10 micrometers. The polymer film may be combined with a dicing tape (310) to form a treatment (300) that simplifies a manufacturing process for a microelectronic package (100) and may be used in order to manage a thermal profile of the microelectronic device.

Abstract: A clad solder thermal interface material is described. In one example the material has a first layer of solder, a second layer of solder clad to the first layer of solder, the second layer having a melting temperature lower than the melting temperature of the first layer, and a third layer of solder clad to the first layer of solder opposite the second layer, the third layer having a melting temperature lower than the melting temperature of the first layer.

Abstract: A semiconductor package is described. The semiconductor package includes a substrate and an integrated heat spreader disposed above and coupled with the substrate. A cavity is disposed between the substrate and the integrated heat spreader. A semiconductor die is disposed above the substrate and in the cavity. An array of first-level solder joints is disposed between the substrate and the semiconductor die. A layer of magnetic particle-based composite material is also disposed in the cavity.

Abstract: A semiconductor package is described. The semiconductor package includes a substrate and an integrated heat spreader disposed above and coupled with the substrate. A cavity is disposed between the substrate and the integrated heat spreader. A semiconductor die is disposed above the substrate and in the cavity. An array of first-level solder joints is disposed between the substrate and the semiconductor die. A layer of magnetic particle-based composite material is also disposed in the cavity.

Abstract: Electronic devices and methods for fabricating electronic devices are described. One method includes providing a first body with a plurality of composite bumps thereon, the composite bumps comprising a solder and magnetic particles. The method also includes applying a magnetic field to the magnetic particles to generate sufficient heat to melt the solder and form molten bump regions containing the magnetic particles therein. The method also includes coupling a second body to the first body through the molten bump regions, and cooling the molten bump regions to form solidified composite bumps coupling the second body to the first body. Other embodiments are described and claimed.

Abstract: Embodiments of the invention relate to a package-on-package (PoP) assembly comprising a top device package and a bottom device package interconnected by way of an electrically interconnected planar stiffener. Embodiments of the invention include a first semiconductor package having a plurality of inter-package contact pads and a plurality of second level interconnect (SLI) pads; a second semiconductor package having a plurality of SLI pads on the bottom side of the package; and a planar stiffener having a first plurality of planar contact pads on the top side of the stiffener electrically connected to the SLI pads of the second package, and a second plurality of planar contact pads electrically connected to the inter-package contact pads of the first package.

Abstract: Methods of forming a microelectronic packaging structure are described. Those methods may include forming a solder paste comprising a sacrificial polymer on a substrate, curing the solder paste below a reflow temperature of the solder to form a solid composite hybrid bump on the conductive pads, forming a molding compound around the solid composite hybrid bump, and reflowing the hybrid bump, wherein the sacrificial polymer is substantially decomposed.

Abstract: Electronic devices and methods for fabricating electronic devices are described. One method includes providing a first body with a plurality of composite bumps thereon, the composite bumps comprising a solder and magnetic particles. The method also includes applying a magnetic field to the magnetic particles to generate sufficient heat to melt the solder and form molten bump regions containing the magnetic particles therein. The method also includes coupling a second body to the first body through the molten bump regions, and cooling the molten bump regions to form solidified composite bumps coupling the second body to the first body. Other embodiments are described and claimed.

Abstract: A semiconductor package is described. The semiconductor package includes a substrate and an integrated heat spreader disposed above and coupled with the substrate. A cavity is disposed between the substrate and the integrated heat spreader. A semiconductor die is disposed above the substrate and in the cavity. An array of first-level solder joints is disposed between the substrate and the semiconductor die. A layer of magnetic particle-based composite material is also disposed in the cavity.