Abstract: Embodiments of the invention are directed to semiconductor die packages. One embodiment of the invention is directed to a semiconductor die package including, (a) a semiconductor die including a first surface and a second surface, (b) a source lead structure including protruding region having a major surface, the source lead structure being coupled to the first surface, (c) a gate lead structure being coupled to the first surface, and (d) a molding material around the source lead structure and the semiconductor die, where the molding material exposes the second surface of the semiconductor die and the major surface of the source lead structure.

Abstract: An optocoupler package is disclosed. The optocoupler package comprises a carrier substrate and a plurality of conductive regions on the carrier substrate. An optoelectronic device, an optically transmissive medium, and a plurality of conductive structures can be on the carrier substrate.

Abstract: A semiconductor device that does not include a molded body or package. The semiconductor device includes a substrate and a die coupled to the substrate. The die is coupled to the substrate such that the source and gate regions of the die, assuming a MOSFET-type device, are coupled to the substrate. Solder balls are provided adjacent to the die such that when the semiconductor device is coupled to a printed circuit board, the exposed surface of the serves as the drain connections while the solder balls serve as the source and gate connections.

Abstract: A method for processing a semiconductor substrate is disclosed. The method includes providing a mask having an aperture on a semiconductor substrate having a conductive region. An aperture in the mask is disposed over the conductive region. A pre-formed conductive column is placed in the aperture and is bonded to the conductive region.

Abstract: A structure and method of manufacture for an improved multi-chip semiconductor package that reduces package resistance to a negligible level, and offers superior thermal performance. Housing of multiple dies is facilitated by providing electrically isolated lead frames that are separated from a common base carrier by a non-conductive layer of laminating material. A silicon die is attached inside a cavity formed in each lead frame. Direct connection of the active surface of the silicon die to the printed circuit board is then made by an array of solder bumps that is distributed across the surface of each die as well as the edges of the lead frame adjacent to each die.

Abstract: A semiconductor device that does not include a molded body or package. The semiconductor device includes a substrate and a die coupled to the substrate. The die is coupled to the substrate such that the source and gate regions of the die, assuming a MOSFET-type device, are coupled to the substrate. Solder balls are provided adjacent to the die such that when the semiconductor device is coupled to a printed circuit board, the exposed surface of the serves as the drain connections while the solder balls serve as the source and gate connections.

Abstract: A semiconductor device that does not include a molded body or package. The semiconductor device includes a substrate and a die coupled to the substrate. The die is coupled to the substrate such that the source and gate regions of the die, assuming a MOSFET-type device, are coupled to the substrate. Solder balls are provided adjacent to the die such that when the semiconductor device is coupled to a printed circuit board, the exposed surface of the serves as the drain connections while the solder balls serve as the source and gate connections.

Abstract: A chip device including two stacked dies. The chip device includes a leadframe that includes a plurality of leads. A first die is coupled to a first side of the leadframe with solder and a second die is coupled to a second side of the leadframe with solder. A molded body surrounds at least a portion of the leadframe and the dies.

Abstract: A bumped wafer for use in making a chip device. The bumped wafer includes two titanium layers sputtered alternatingly with two copper layers over a non-passivated die. The bumped wafer further includes under bump material under solder bumps contained thereon.

Abstract: An improved semiconductor package that reduces package resistance to a negligible level, and offers superior thermal performance. A silicon die is attached to a carrier (or substrate) that has a cavity substantially surrounding the die. Direct connection of the active surface of the silicon die to the printed circuit board is then made by an array of solder bumps that is distributed across the surface of the die as well as the edges of the carrier surrounding the die.

Abstract: An improved semiconductor package that reduces package resistance to a negligible level, and offers superior thermal performance. A silicon die is attached to a carrier (or substrate) that has a cavity substantially surrounding the die. Direct connection of the active surface of the silicon die to the printed circuit board is then made by an array of solder bumps that is distributed across the surface of the die as well as the edges of the carrier surrounding the die.

Abstract: An integrated circuit package includes a die and an electrically conductive cap attached to the top surface of the die. The die has a top surface, a bottom surface, an edge surface, a plurality of input/output terminals on the bottom surface of the die, and an input/output terminal pad on the top surface of the die. An electrically conductive arrangement is electrically connected to the input/output terminals on the bottom surface of the die providing an arrangement for electrically connecting the input/output terminals on the bottom surface of the die to other electrical elements. The electrically conductive cap attached to the top surface of the die provides an arrangement for electrically connecting the input/output terminal on the top surface of the die to other electrical elements and may be used to provide improved heat dissipation from the die.

Abstract: The present invention discloses the use of a dielectric substrate panel suitable for supporting a plurality of independently packaged ICs. The substrate panel has a plurality of conductive landings arranged on its top surface, a plurality of conductive contacts arranged on its bottom surface and a multiplicity of electrically conductive vias. The vias pass through the substrate panel and are arranged to interconnect selected landings with their associated conductive contacts. The top surface of the substrate panel also includes a number of die attach areas. During packaging, dies are secured to their associated die attach areas on the substrate panel and electrically coupled to appropriate conductive landings. An encapsulant is then formed over each of the dies for protection.

Abstract: The present invention discloses the use of a dielectric substrate panel suitable for supporting a plurality of independently packaged ICs. The substrate panel has a plurality of conductive landings arranged on its top surface, a plurality of conductive contacts arranged on its bottom surface and a multiplicity of electrically conductive vias. The vias pass through the substrate panel and are arranged to interconnect selected landings with their associated conductive contacts. The top surface of the substrate panel also includes a number of die attach areas. During packaging, dies are secured to their associated die attach areas on the substrate panel and electrically coupled to appropriate conductive landings. An encapsulant is then formed over each of the dies for protection.