Patents by Inventor Rakesh Jain

Rakesh Jain has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10923623
    Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.
    Type: Grant
    Filed: March 12, 2019
    Date of Patent: February 16, 2021
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Jinwei Yang, Remigijus Gaska, Mikhail Gaevski
  • Publication number: 20210034610
    Abstract: A low-latency database analysis system using an object index may include obtaining data expressing a usage intent, and, in response to a determination that the data expressing the usage intent includes object search request data including a user identifier and zero or more object search terms, obtaining, from an object-index responsive to the object search request data, object indexing data for an object, obtaining object detail data for the object, obtaining an object visualization capture for the object, and outputting object search response data including the object visualization capture and at least a portion of the object detail data for presentation to a user.
    Type: Application
    Filed: July 29, 2019
    Publication date: February 4, 2021
    Inventors: Pulkit Arora, Ramnik Jain, Rakesh Kothari, Vishal Kasera
  • Publication number: 20210028326
    Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition.
    Type: Application
    Filed: October 1, 2020
    Publication date: January 28, 2021
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur
  • Publication number: 20210028325
    Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The electron blocking layer is located between the active region and the p-type contact layer. In an embodiment, the electron blocking layer can include a plurality of sublayers that vary in composition.
    Type: Application
    Filed: October 1, 2020
    Publication date: January 28, 2021
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur
  • Patent number: 10903391
    Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The p-type contact layer and electron blocking layer can be doped with a p-type dopant. The dopant concentration for the electron blocking layer can be at most ten percent the dopant concentration of the p-type contact layer. A method of designing such a heterostructure is also described.
    Type: Grant
    Filed: June 17, 2019
    Date of Patent: January 26, 2021
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur
  • Publication number: 20210017177
    Abstract: The invention relates to activators of FXR useful in the treatment of autoimmune disorders, liver disease, intestinal disease, kidney disease, cancer, and other diseases in which FXR plays a role, having the Formula (I): wherein L1, A, X1, X2, R1, R2, and R3 are described herein.
    Type: Application
    Filed: August 11, 2020
    Publication date: January 21, 2021
    Applicant: ARDELYX, INC.
    Inventors: Jianhua Chao, Rakesh Jain, Lily Hu, Jason Gustaf Lewis, Helene Baribault, Jeremy Caldwell
  • Patent number: 10885338
    Abstract: An apparatus includes a cable having two ends and at least two object markers coupled to the cable configured to enable augmented reality (AR) detection of each end of the cable among a plurality of cables. A computer-implemented method using augmented reality (AR) technology includes selecting a cable of interest, identifying an object marker at a first end of the cable of interest, and storing the object marker. The method also includes scanning a plurality of cables, detecting a second instance of the object marker, and identifying a second end of the cable of interest based on the object marker. A computer program product for detecting ends of cables using augmented reality (AR) technology, includes a computer readable storage medium having program instructions embodied therewith. The program instructions executable by a computer to cause the computer to perform the foregoing method.
    Type: Grant
    Filed: May 23, 2019
    Date of Patent: January 5, 2021
    Assignee: International Business Machines Corporation
    Inventors: Rakesh Jain, Ramani Routray, Mu Qiao
  • Publication number: 20200410240
    Abstract: An apparatus includes a cable having two ends and at least two object markers coupled to the cable configured to enable augmented reality (AR) detection of each end of the cable among a plurality of cables. A computer-implemented method using augmented reality (AR) technology includes selecting a cable of interest and identifying an object marker positioned toward a first end of the cable of interest. The method also includes storing the object marker, scanning a plurality of cables, and identifying a second end of the cable of interest based an instance of the object marker positioned toward the second end of the cable of interest. A computer program product for detecting ends of cables using augmented reality (AR) technology includes a computer readable storage medium having program instructions embodied therewith. The program instructions are executable by a computer to cause the computer to perform the foregoing method.
    Type: Application
    Filed: September 9, 2020
    Publication date: December 31, 2020
    Inventors: Rakesh Jain, Ramani Routray, Mu Qiao
  • Patent number: 10852946
    Abstract: Techniques for non-disruptive upgrade of a storage appliance may include: restarting a first portion of nodes running a target software version while also running a current software version on a second portion of the nodes, wherein the non-disruptive upgrade is performed to upgrade the nodes of the storage appliance from the current software version to the target software version; performing I/O forwarding where I/Os from the host initiators are serviced using the second portion of the nodes and not serviced using the first portion of the nodes; and determining, in accordance with host initiator login information, whether to continue with the non-disruptive upgrade of the nodes to the target software version. Such techniques may be used, for example, to avoid data unavailability for one or more hosts using the host initiator login information.
    Type: Grant
    Filed: January 31, 2018
    Date of Patent: December 1, 2020
    Assignee: EMC IP Holding Company LLC
    Inventors: Oguzhan Ozmen, Rakesh Kumar Thakur, Deepak Prakash Ghivari, Ashwini Joshi, Sneha Yadav, Usha Narasappa, Koundinya Koorapati, Shailesh Jain
  • Publication number: 20200372253
    Abstract: An apparatus includes a cable having two ends and at least two object markers coupled to the cable configured to enable augmented reality (AR) detection of each end of the cable among a plurality of cables. A computer-implemented method using augmented reality (AR) technology includes selecting a cable of interest, identifying an object marker at a first end of the cable of interest, and storing the object marker. The method also includes scanning a plurality of cables, detecting a second instance of the object marker, and identifying a second end of the cable of interest based on the object marker. A computer program product for detecting ends of cables using augmented reality (AR) technology, includes a computer readable storage medium having program instructions embodied therewith. The program instructions executable by a computer to cause the computer to perform the foregoing method.
    Type: Application
    Filed: May 23, 2019
    Publication date: November 26, 2020
    Inventors: Rakesh Jain, Ramani Routray, Mu Qiao
  • Patent number: 10831588
    Abstract: One embodiment provides a method for diagnosing data center incidents including receiving a data center incident report including information technology (IT) device incident information. Augmented reality (AR) is applied for an AR interface for receiving incident evidence information based on the IT device incident information. The incident evidence information is sent to a cognitive analytical process. Using the cognitive analytical process, statistical inference is determined and an incident diagnosis recommendation including analytical results is generated. The analytical results are received by the AR interface for determining a root cause of the incident report.
    Type: Grant
    Filed: October 16, 2018
    Date of Patent: November 10, 2020
    Assignee: International Business Machines Corporation
    Inventors: Mu Qiao, Rakesh Jain, Ramani Routray
  • Patent number: 10804423
    Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The p-type contact layer and electron blocking layer can be doped with a p-type dopant. The dopant concentration for the electron blocking layer can be at most ten percent the dopant concentration of the p-type contact layer. A method of designing such a heterostructure is also described.
    Type: Grant
    Filed: April 30, 2018
    Date of Patent: October 13, 2020
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur
  • Patent number: 10793568
    Abstract: The invention relates to activators of FXR useful in the treatment of autoimmune disorders, liver disease, intestinal disease, kidney disease, cancer, and other diseases in which FXR plays a role, having the Formula (I): (I), wherein L1, A, X1, X2, R1, R2, and R3 are described herein.
    Type: Grant
    Filed: August 23, 2017
    Date of Patent: October 6, 2020
    Assignee: ARDELYX, INC.
    Inventors: Jianhua Chao, Rakesh Jain, Lily Hu, Jason Gustaf Lewis, Helene Baribault, Jeremy Caldwell
  • Patent number: 10754551
    Abstract: A method and associated systems for a workload-aware thin-provisioning system that allocates physical storage to virtual resources from pools of physical storage volumes. The system receives constraints that limit the amount of storage that can be allocated from each pool and the total workload that can be directed to each pool. It also receives lists of previous workloads and allocations associated with each volume at specific times in the past. The system then predicts future workloads and allocation requirements for each volume by regressing linear equations derived from the received data. If the predicted values indicate that a pool will at a future time violate a received constraint, the system computes the minimum costs to move each volume of the offending pool to a less-burdened pool. It then selects the lowest-cost combination of volume and destination pool and then moves the selected volume to the selected pool.
    Type: Grant
    Filed: March 5, 2019
    Date of Patent: August 25, 2020
    Assignee: International Business Machines Corporation
    Inventors: John J. Auvenshine, Rakesh Jain, James E. Olson, Mu Qiao, Ramani R. Routray, Stanley C. Wood
  • Publication number: 20200177179
    Abstract: A transistor, e.g., field effect transistor FET, ringing adjustment circuit and method comprising the measuring of a voltage from a transistor (e.g., a node of a FET) during the transistor turning on and turning off, determining the voltage oscillation in the measured voltage by performing a derivative function on the measured voltage and detecting a switch in a voltage change rate from positive to negative or negative to positive, and comparing the voltage change rate after the detected switch to adjust drive current applied to the transistor to optimize efficiency while minimizing voltage oscillation and ringing.
    Type: Application
    Filed: November 30, 2018
    Publication date: June 4, 2020
    Inventors: Michael Edwin BUTENHOFF, Rakesh RAJA, Anuj JAIN
  • Publication number: 20200125748
    Abstract: A computer-implemented method according to one embodiment includes receiving a data object from a first application running on a computing device, a unique identifier (ID) of the data object assigned by the first application, and an access permission for the data object from the first application. The computer-implemented method also includes storing the data object, the unique ID, and the access permission in a data repository in a data distributor layer on the computing device. The computer-implemented method also includes receiving, at an access controller layer of the computing device, a request for the data object from a second application, the request including the unique ID, and retrieving, by the access controller layer, the data object from the data distributor layer using the unique ID in response to the request. The computer-implemented method includes providing, by the access controller layer, the data object to the second application.
    Type: Application
    Filed: October 17, 2018
    Publication date: April 23, 2020
    Inventors: Sunhwan Lee, Rakesh Jain, Mu Qiao, Divyesh Jadav, Luis Angel Bathen, Ramani R. Routray
  • Patent number: 10629770
    Abstract: Semiconductor structures formed with annealing for use in the fabrication of optoelectronic devices. The semiconductor structures can include a substrate, a nucleation layer and a buffer layer. The nucleation layer and the buffer layer can be epitaxially grown and then annealed. The temperature of the annealing of the nucleation layer and the buffer layer is greater than the temperature of the epitaxial growth of the layers. The annealing reduces the dislocation density in any subsequent layers that are added to the semiconductor structures. A desorption minimizing layer epitaxially grown on the buffer layer can be used to minimize desorption during the annealing of the layer which also aids in curtailing dislocation density and cracks in the semiconductor structures.
    Type: Grant
    Filed: June 29, 2018
    Date of Patent: April 21, 2020
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Rakesh Jain, Maxim S. Shatalov
  • Publication number: 20200117529
    Abstract: One embodiment provides a method for diagnosing data center incidents including receiving a data center incident report including information technology (IT) device incident information. Augmented reality (AR) is applied for an AR interface for receiving incident evidence information based on the IT device incident information. The incident evidence information is sent to a cognitive analytical process. Using the cognitive analytical process, statistical inference is determined and an incident diagnosis recommendation including analytical results is generated. The analytical results are received by the AR interface for determining a root cause of the incident report.
    Type: Application
    Filed: October 16, 2018
    Publication date: April 16, 2020
    Inventors: Mu Qiao, Rakesh Jain, Ramani Routray
  • Patent number: 10622515
    Abstract: A method of fabricating a device using a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. The substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the stress reducing regions can have a characteristic size between approximately 0.1 microns and approximately five microns and a depth of at least 0.2 microns. A layer of group-III nitride material can be grown on the first layer and have a thickness at least twice the characteristic size of the stress reducing regions. A device including one or more of these features also is provided.
    Type: Grant
    Filed: May 25, 2018
    Date of Patent: April 14, 2020
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Rakesh Jain, Wenhong Sun, Jinwei Yang, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Patent number: 10615307
    Abstract: A semiconductor layer including a plurality of inhomogeneous regions is provided. Each inhomogeneous region has one or more attributes that differ from a material forming the semiconductor layer. The inhomogeneous regions can include one or more regions configured based on radiation having a target wavelength. These regions can include transparent and/or reflective regions. The inhomogeneous regions also can include one or more regions having a higher conductivity than a conductivity of the radiation-based regions, e.g., at least ten percent higher. In one embodiment, the semiconductor layer is used to form an optoelectronic device.
    Type: Grant
    Filed: December 29, 2017
    Date of Patent: April 7, 2020
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Alexander Dobrinsky, Rakesh Jain, Michael Shur