Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.

Abstract: A low-latency database analysis system using an object index may include obtaining data expressing a usage intent, and, in response to a determination that the data expressing the usage intent includes object search request data including a user identifier and zero or more object search terms, obtaining, from an object-index responsive to the object search request data, object indexing data for an object, obtaining object detail data for the object, obtaining an object visualization capture for the object, and outputting object search response data including the object visualization capture and at least a portion of the object detail data for presentation to a user.

Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition.

Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The electron blocking layer is located between the active region and the p-type contact layer. In an embodiment, the electron blocking layer can include a plurality of sublayers that vary in composition.

Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The p-type contact layer and electron blocking layer can be doped with a p-type dopant. The dopant concentration for the electron blocking layer can be at most ten percent the dopant concentration of the p-type contact layer. A method of designing such a heterostructure is also described.

Abstract: The invention relates to activators of FXR useful in the treatment of autoimmune disorders, liver disease, intestinal disease, kidney disease, cancer, and other diseases in which FXR plays a role, having the Formula (I): wherein L1, A, X1, X2, R1, R2, and R3 are described herein.

Abstract: An apparatus includes a cable having two ends and at least two object markers coupled to the cable configured to enable augmented reality (AR) detection of each end of the cable among a plurality of cables. A computer-implemented method using augmented reality (AR) technology includes selecting a cable of interest, identifying an object marker at a first end of the cable of interest, and storing the object marker. The method also includes scanning a plurality of cables, detecting a second instance of the object marker, and identifying a second end of the cable of interest based on the object marker. A computer program product for detecting ends of cables using augmented reality (AR) technology, includes a computer readable storage medium having program instructions embodied therewith. The program instructions executable by a computer to cause the computer to perform the foregoing method.

Abstract: An apparatus includes a cable having two ends and at least two object markers coupled to the cable configured to enable augmented reality (AR) detection of each end of the cable among a plurality of cables. A computer-implemented method using augmented reality (AR) technology includes selecting a cable of interest and identifying an object marker positioned toward a first end of the cable of interest. The method also includes storing the object marker, scanning a plurality of cables, and identifying a second end of the cable of interest based an instance of the object marker positioned toward the second end of the cable of interest. A computer program product for detecting ends of cables using augmented reality (AR) technology includes a computer readable storage medium having program instructions embodied therewith. The program instructions are executable by a computer to cause the computer to perform the foregoing method.

Abstract: Techniques for non-disruptive upgrade of a storage appliance may include: restarting a first portion of nodes running a target software version while also running a current software version on a second portion of the nodes, wherein the non-disruptive upgrade is performed to upgrade the nodes of the storage appliance from the current software version to the target software version; performing I/O forwarding where I/Os from the host initiators are serviced using the second portion of the nodes and not serviced using the first portion of the nodes; and determining, in accordance with host initiator login information, whether to continue with the non-disruptive upgrade of the nodes to the target software version. Such techniques may be used, for example, to avoid data unavailability for one or more hosts using the host initiator login information.

Abstract: An apparatus includes a cable having two ends and at least two object markers coupled to the cable configured to enable augmented reality (AR) detection of each end of the cable among a plurality of cables. A computer-implemented method using augmented reality (AR) technology includes selecting a cable of interest, identifying an object marker at a first end of the cable of interest, and storing the object marker. The method also includes scanning a plurality of cables, detecting a second instance of the object marker, and identifying a second end of the cable of interest based on the object marker. A computer program product for detecting ends of cables using augmented reality (AR) technology, includes a computer readable storage medium having program instructions embodied therewith. The program instructions executable by a computer to cause the computer to perform the foregoing method.

Abstract: One embodiment provides a method for diagnosing data center incidents including receiving a data center incident report including information technology (IT) device incident information. Augmented reality (AR) is applied for an AR interface for receiving incident evidence information based on the IT device incident information. The incident evidence information is sent to a cognitive analytical process. Using the cognitive analytical process, statistical inference is determined and an incident diagnosis recommendation including analytical results is generated. The analytical results are received by the AR interface for determining a root cause of the incident report.

Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The p-type contact layer and electron blocking layer can be doped with a p-type dopant. The dopant concentration for the electron blocking layer can be at most ten percent the dopant concentration of the p-type contact layer. A method of designing such a heterostructure is also described.

Abstract: The invention relates to activators of FXR useful in the treatment of autoimmune disorders, liver disease, intestinal disease, kidney disease, cancer, and other diseases in which FXR plays a role, having the Formula (I): (I), wherein L1, A, X1, X2, R1, R2, and R3 are described herein.

Abstract: A method and associated systems for a workload-aware thin-provisioning system that allocates physical storage to virtual resources from pools of physical storage volumes. The system receives constraints that limit the amount of storage that can be allocated from each pool and the total workload that can be directed to each pool. It also receives lists of previous workloads and allocations associated with each volume at specific times in the past. The system then predicts future workloads and allocation requirements for each volume by regressing linear equations derived from the received data. If the predicted values indicate that a pool will at a future time violate a received constraint, the system computes the minimum costs to move each volume of the offending pool to a less-burdened pool. It then selects the lowest-cost combination of volume and destination pool and then moves the selected volume to the selected pool.

Abstract: A transistor, e.g., field effect transistor FET, ringing adjustment circuit and method comprising the measuring of a voltage from a transistor (e.g., a node of a FET) during the transistor turning on and turning off, determining the voltage oscillation in the measured voltage by performing a derivative function on the measured voltage and detecting a switch in a voltage change rate from positive to negative or negative to positive, and comparing the voltage change rate after the detected switch to adjust drive current applied to the transistor to optimize efficiency while minimizing voltage oscillation and ringing.

Abstract: A computer-implemented method according to one embodiment includes receiving a data object from a first application running on a computing device, a unique identifier (ID) of the data object assigned by the first application, and an access permission for the data object from the first application. The computer-implemented method also includes storing the data object, the unique ID, and the access permission in a data repository in a data distributor layer on the computing device. The computer-implemented method also includes receiving, at an access controller layer of the computing device, a request for the data object from a second application, the request including the unique ID, and retrieving, by the access controller layer, the data object from the data distributor layer using the unique ID in response to the request. The computer-implemented method includes providing, by the access controller layer, the data object to the second application.

Abstract: Semiconductor structures formed with annealing for use in the fabrication of optoelectronic devices. The semiconductor structures can include a substrate, a nucleation layer and a buffer layer. The nucleation layer and the buffer layer can be epitaxially grown and then annealed. The temperature of the annealing of the nucleation layer and the buffer layer is greater than the temperature of the epitaxial growth of the layers. The annealing reduces the dislocation density in any subsequent layers that are added to the semiconductor structures. A desorption minimizing layer epitaxially grown on the buffer layer can be used to minimize desorption during the annealing of the layer which also aids in curtailing dislocation density and cracks in the semiconductor structures.

Abstract: One embodiment provides a method for diagnosing data center incidents including receiving a data center incident report including information technology (IT) device incident information. Augmented reality (AR) is applied for an AR interface for receiving incident evidence information based on the IT device incident information. The incident evidence information is sent to a cognitive analytical process. Using the cognitive analytical process, statistical inference is determined and an incident diagnosis recommendation including analytical results is generated. The analytical results are received by the AR interface for determining a root cause of the incident report.

Abstract: A method of fabricating a device using a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. The substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the stress reducing regions can have a characteristic size between approximately 0.1 microns and approximately five microns and a depth of at least 0.2 microns. A layer of group-III nitride material can be grown on the first layer and have a thickness at least twice the characteristic size of the stress reducing regions. A device including one or more of these features also is provided.

Abstract: A semiconductor layer including a plurality of inhomogeneous regions is provided. Each inhomogeneous region has one or more attributes that differ from a material forming the semiconductor layer. The inhomogeneous regions can include one or more regions configured based on radiation having a target wavelength. These regions can include transparent and/or reflective regions. The inhomogeneous regions also can include one or more regions having a higher conductivity than a conductivity of the radiation-based regions, e.g., at least ten percent higher. In one embodiment, the semiconductor layer is used to form an optoelectronic device.