Patents by Inventor Ralf Siemieniec

Ralf Siemieniec has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070296029
    Abstract: An integrated circuit including a field effect controllable trench transistor having two-control electrodes is disclosed. One embodiment provides a trench having a first control electrode and a second control electrode. A first electrical line is provided in an edge structure for electrically contact-connecting second control electrode.
    Type: Application
    Filed: June 8, 2007
    Publication date: December 27, 2007
    Applicant: INFINEON TECHNOLOGIES AUSTRIA AG
    Inventors: Franz Hirler, Maximilian Roesch, Ralf Siemieniec
  • Publication number: 20060211179
    Abstract: The invention relates to a semiconductor component, which comprises a semiconductor body having a first and a second terminal zone of a first conduction type (n), a channel zone of a second conduction type (p), which is short circuited with the second terminal zone, a drift zone of the first conduction type (n) with weaker doping than the terminal zones, which drift zone is formed between the channel zone and the first terminal zone, the channel zone being formed between the drift zone and the second terminal zone, a control electrode, formed so that it is insulated from the channel zone, for controlling a conductive channel in the channel zone between the second terminal zone and the drift zone, and is distinguished in that a field stop zone of the first conduction type (n) is formed between the first terminal zone and the drift zone, the field stop zone having heavier doping than the drift zone and weaker doping than the first terminal zone, the maximum doping of the field stop zone being at most a factor o
    Type: Application
    Filed: February 28, 2006
    Publication date: September 21, 2006
    Applicant: Infineon Technologies Austria AG
    Inventors: Ralf Siemieniec, Hans-Joachim Schulze
  • Publication number: 20060211189
    Abstract: A method for producing a region of increased doping in an n-doped semiconductor layer which is buried in a semiconductor body of a vertical power transistor and which is arranged between a p-doped body region facing the front side contact of the power transistor and an n-doped substrate facing the rear side contact of the power transistor has the following steps: a) irradiation of at least one part of the surface of the semiconductor body with protons, and b) heat treatment of the semiconductor body.
    Type: Application
    Filed: February 28, 2006
    Publication date: September 21, 2006
    Applicant: Infineon Technologies Austria AG
    Inventors: Ralf Siemieniec, Hans-Joachim Schulze, Franz Hirler
  • Publication number: 20060043470
    Abstract: A method for producing a buried n-doped semiconductor zone in a semiconductor body. In one embodiment, the method includes producing an oxygen concentration at least in the region to be doped in the semiconductor body. The semiconductor body is irradiated via one side with nondoping particles for producing defects in the region to be doped. A thermal process is carried out. The invention additionally relates to a semiconductor component with a field stop zone.
    Type: Application
    Filed: August 11, 2005
    Publication date: March 2, 2006
    Inventors: Hans-Joachim Schulze, Josef Lutz, Franz-Josef Niedernostheide, Ralf Siemieniec