Patents by Inventor Raluca Tiron

Raluca Tiron has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD FOR MAKING PATTERNS ON THE SURFACE OF A SUBSTRATE USING BLOCK COPOLYMERS
    Publication number: 20140193580
    Abstract: A method for making patterns on the surface of a substrate by graphoepitaxy, includes depositing a layer of resin on the surface of the substrate; making patterns in the resin on the surface of a substrate; curing the patterns in the resin by producing a layer of amorphous carbon on the surface of the patterns in the resin; depositing a layer of statistical copolymer after curing the patterns in the resin; grafting the layer of statistical copolymer onto the patterns in the resin by annealing; and depositing a layer of a block copolymer into the spaces defined by the patterns in the resin after curing the patterns and the grafting of the layer of statistical copolymer.
    Type: Application
    Filed: May 18, 2012
    Publication date: July 10, 2014
    Applicants: Centre National de la Recherche Scientifique (CNRS), Commissariat à I'énergie atomique et aux energies alternatives
    Inventors: Raluca Tiron, Stéphanie Gaugiran, Xavier Chevalier, Serge Tedesco
  • METHOD FOR PREPARING SURFACES
    Publication number: 20140127418
    Abstract: The invention relates to a new surface preparation method using molecules comprising at least one covalent bond which gives rise to free radicals when the molecule is activated thermally, by organic or inorganic redox, photochemically, by plasma, by shear or else under the influence of ionizing radiation.
    Type: Application
    Filed: April 13, 2012
    Publication date: May 8, 2014
    Applicants: Arkema France, Institut Polytechnique de Bordeaux, Commissariat A L'Energie Atomique et Aux Energies Alternatives
    Inventors: Christophe Navarro, Stéphane Magnet, Xavier Chevalier, Raluca Tiron
  • PROCESS FOR FABRICATING A TRANSISTOR COMPRISING NANOSCALE SEMICONDUCTOR FEATURES USING BLOCK COPOLYMERS
    Publication number: 20130323888
    Abstract: A process for fabricating one transistor, comprising a semiconductor region, comprising a source region, a drain region, and a channel region covered with a gate, comprises: production of an primary etching mask on the surface of the semiconductor region, said mask containing at least one primary aperture; depositing in said primary aperture a block copolymer containing, in alternation, at least first polymer domains and second polymer domains; removing either a series of first polymer domains or a series of second polymer domains in order to create a secondary mask containing secondary apertures; etching said active region through said secondary apertures in order to define nanoscale self-aligned semiconductor features; producing said gate on the surface of said self-aligned semiconductor features.
    Type: Application
    Filed: May 25, 2013
    Publication date: December 5, 2013
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Simeon MORVAN, Francois ANDRIEU, Raluca TIRON
  • Method for measuring the creep of a thin film inserted between two rigid substrates, with one cantilever end
    Patent number: 8152364
    Abstract: A film is inserted between two rigid substrates which form a sample. The sample is fixed at a first end in a device for measuring creep. The device comprises means for applying a predetermined force on a free end of the sample. The film being sheared, study of its creep can be performed.
    Type: Grant
    Filed: December 16, 2008
    Date of Patent: April 10, 2012
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Cecile Petitdidier, Raluca Tiron, Benedicte Mortini
  • Method for measuring the creep of a thin film inserted between two rigid substrates, with one cantilever end
    Publication number: 20090260450
    Abstract: A film is inserted between two rigid substrates which form a sample. The sample is fixed at a first end in a device for measuring creep. The device comprises means for applying a predetermined force on a free end of the sample. The film being sheared, study of its creep can be performed.
    Type: Application
    Filed: December 16, 2008
    Publication date: October 22, 2009
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE
    Inventors: Cecile Petitdidier, Raluca Tiron, Benedicte Mortini