Abstract: A method for forming a metal gate (20) structure begins by providing a semiconductor substrate (12). The semiconductor substrate (12) is cleaned to reduce trap sites. A nitrided layer (14) having a thickness of less than approximately 20 Angstroms is formed over the substrate (12). This nitrided layer prevents the formation of an oxide at the substrate interface and has a dielectric constant greater than 3.9. After the formation of the nitrided layer(14), a metal oxide layer (16) having a permittivity value of greater than roughly 8.0 is formed over the nitrided layer (14). A metal gate (20) is formed over the nitrided layer whereby the remaining composite gate dielectric (14 and 16) has a larger physical thickness but a high-performance equivalent oxide thickness (EOT).

Abstract: A method for forming an oxynitride gate dielectric layer (202, 204) begins by providing a semiconductor substrate (200). This semiconductor substrate is cleaned via process steps (10-28). Optional nitridation and oxidation are performed via steps (50 and 60) to form a thin interface layer (202). Bulk oxynitride gate deposition occurs via a step (70) to form a bulk gate dielectric material (204) having custom tailored oxygen and nitrogen profile and concentration. A step (10) is then utilized to in situ cap this bulk dielectric layer (204) with a polysilicon or amorphous silicon layer (208). The layer (208) ensures that the custom tailors oxygen and nitrogen profile and concentration of the underlying gate dielectric (204) is preserved even in the presence of subsequent wafer exposure to oxygen ambients.

Abstract: A process for fabricating a semiconductor device which includes forming a collimated metal layer (54) on the surface of a semiconductor substrate (24), while maintaining the temperature of the substrate preferably below about 100.degree. C., and most preferably below about 25.degree. C. The collimated metal layer (54) is formed by directing a stream of metal atoms through a collimator (18) and onto the surface of the substrate (24). The temperature of the substrate (24) is controlled by supplying a heat transfer fluid from a temperature control system (26) to a vacuum chuck (14) supporting the semiconductor substrate (24). The collimated metal layer (54) is comprised of metal atoms having predominantly a (002) crystallographic orientation. The uniform crystallographic orientation of the collimated metal layer (54) can be used to effect the formation of additional metal layers (58, 62) having uniform crystallographic orientation.

Abstract: Accuracy and repeatability of atomic force microscopy (AFM) are improved by coating a single crystal silicon probe tip with a layer of carbon. The carbon-coated probe tip is brought into contact with a specimen surface, and is scanned across the area of interest. The carbon coating improves the interaction between the probe tip and specimen surface, particularly insulating surfaces, by reducing probe tip damage and minimizing charge build-up.