Patents by Inventor Rami HOURANI

Rami HOURANI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Forming layers of materials over small regions by selective chemical reaction including limiting enchroachment of the layers over adjacent regions
    Patent number: 9530733
    Abstract: A method of an aspect includes forming a first thicker layer of a first material over a first region having a first surface material by separately forming each of a first plurality of thinner layers by selective chemical reaction. The method also includes limiting encroachment of each of the first plurality of thinner layers over a second region that is adjacent to the first region. A second thicker layer of a second material is formed over the second region having a second surface material that is different than the first surface material.
    Type: Grant
    Filed: September 27, 2013
    Date of Patent: December 27, 2016
    Assignee: Intel Corporation
    Inventors: Robert L. Bristol, James M. Blackwell, Scott B. Clendenning, Florian Gstrein, Eungnak Han, Grant M. Kloster, Jeanette M. Roberts, Patricio E. Romero, Rami Hourani
  • NON-LITHOGRAPHICALLY PATTERNED DIRECTED SELF ASSEMBLY ALIGNMENT PROMOTION LAYERS
    Publication number: 20160351449
    Abstract: A method of an aspect includes forming a directed self assembly alignment promotion layer over a surface of a substrate having a first patterned region and a second patterned region. A first directed self assembly alignment promotion material is formed selectively over the first patterned region without using lithographic patterning. The method also includes forming an assembled layer over the directed self assembly alignment promotion layer by directed self assembly. A plurality of assembled structures are formed that each include predominantly a first type of polymer over the first directed self assembly alignment promotion material. The assembled structures are each adjacently surrounded by predominantly a second different type of polymer over the second patterned region. The first directed self assembly alignment promotion material has a greater chemical affinity for the first type of polymer than for the second different type of polymer.
    Type: Application
    Filed: August 15, 2016
    Publication date: December 1, 2016
    Inventors: Robert L. BRISTOL, Rami HOURANI, Eungnak HAN, James M. BLACKWELL
  • Non-lithographically patterned directed self assembly alignment promotion layers
    Patent number: 9418888
    Abstract: A method of an aspect includes forming a directed self assembly alignment promotion layer over a surface of a substrate having a first patterned region and a second patterned region. A first directed self assembly alignment promotion material is formed selectively over the first patterned region without using lithographic patterning. The method also includes forming an assembled layer over the directed self assembly alignment promotion layer by directed self assembly. A plurality of assembled structures are formed that each include predominantly a first type of polymer over the first directed self assembly alignment promotion material. The assembled structures are each adjacently surrounded by predominantly a second different type of polymer over the second patterned region. The first directed self assembly alignment promotion material has a greater chemical affinity for the first type of polymer than for the second different type of polymer.
    Type: Grant
    Filed: June 27, 2013
    Date of Patent: August 16, 2016
    Assignee: Intel Corporation
    Inventors: Robert L. Bristol, Rami Hourani, Eungnak Han, James M. Blackwell
  • FORMING LAYERS OF MATERIALS OVER SMALL REGIONS BY SELECTIV CHEMICAL REACTION INCLUDING LIMITING ENCHROACHMENT OF THE LAYERS OVER ADJACENT REGIONS
    Publication number: 20160190060
    Abstract: A method of an aspect includes forming a first thicker layer of a first material over a first region having a first surface material by separately forming each of a first plurality of thinner layers by selective chemical reaction. The method also includes limiting encroachment of each of the first plurality of thinner layers over a second region that is adjacent to the first region. A second thicker layer of a second material is formed over the second region having a second surface material that is different than the first surface material.
    Type: Application
    Filed: September 27, 2013
    Publication date: June 30, 2016
    Inventors: Robert L. Bristol, James M. BLACKWELL, Scott B. CLENDENNING, Florian GSTREIN, Eungnak HAN, Grant M. KLOSTER, Jeanette M. ROBERTS, Patricio E. ROMERO, Rami HOURANI
  • NON-LITHOGRAPHICALLY PATTERNED DIRECTED SELF ASSEMBLY ALIGNMENT PROMOTION LAYERS
    Publication number: 20160172237
    Abstract: A method of an aspect includes forming a directed self assembly alignment promotion layer over a surface of a substrate having a first patterned region and a second patterned region. A first directed self assembly alignment promotion material is formed selectively over the first patterned region without using lithographic patterning. The method also includes forming an assembled layer over the directed self assembly alignment promotion layer by directed self assembly. A plurality of assembled structures are formed that each include predominantly a first type of polymer over the first directed self assembly alignment promotion material. The assembled structures are each adjacently surrounded by predominantly a second different type of polymer over the second patterned region. The first directed self assembly alignment promotion material has a greater chemical affinity for the first type of polymer than for the second different type of polymer.
    Type: Application
    Filed: June 27, 2013
    Publication date: June 16, 2016
    Inventors: Robert L. Bristol, Rami HOURANI, Eungnak HAN, James M. BLACKWELL