Abstract: A method for fabricating a light emitting element includes preparing a substrate, and forming a first semiconductor material layer, a light emitting material layer, a second semiconductor material layer and an electrode material layer on the substrate, forming semiconductor rods spaced apart from each other by etching the first semiconductor material layer, the light emitting material layer, the second semiconductor material layer and the electrode material layer in a direction perpendicular to an upper surface of the substrate, forming an insulating layer surrounding sides of the semiconductor rods through a sol-gel process by immersing the substrate, including the semiconductor rods, in a solution containing a precursor material, and forming light emitting elements by separating the semiconductor rods, including the insulating layer, from the substrate, and the light emitting elements have an external quantum efficiency of 20.2±0.6%.

Abstract: A color conversion substrate includes a base substrate, a color filter layer on the base substrate, a low refractive index layer on the color filter layer, a capping layer on the low refractive index layer, where the capping layer includes a first capping film including silicon oxynitride (SiOxNy) having a nitrogen content in a range of about 10 at % to about 35 at %, a bank on the capping layer, where an opening defining a plurality of pixels is defined in the bank, and a color conversion layer on the capping layer in the opening.

Abstract: A color conversion substrate includes a base substrate, a color filter layer on the base substrate, a low refractive index layer on the color filter layer, a capping layer on the low refractive index layer, where the capping layer includes a first capping film including silicon oxynitride (SiOxNy) having a nitrogen content in a range of about 10 at % to about 35 at %, a bank on the capping layer, where an opening defining a plurality of pixels is defined in the bank, and a color conversion layer on the capping layer in the opening.

Abstract: A semiconductor package includes a semiconductor chip disposed on a substrate; a first passive component and a second passive component disposed on the substrate; and an encapsulant disposed on the substrate and covering the semiconductor chip, the first passive component, and the second passive component. A first electrode is disposed on an insulating layer of the substrate between the first passive component and the insulating layer. A second electrode is disposed on the insulating layer between the second passive component and the insulating layer and spaced apart from the first electrode. A first dam structure is disposed on the insulating layer. The first dam structure includes a support pattern and a solder resist layer surrounding the support pattern. The first dam structure is disposed between the first electrode and the second electrode.

Abstract: A display device includes a substrate including a light emitting area and a driving area spaced apart from the light emitting area in a plan view, a first epi layer disposed in the light emitting area on the substrate, a light emitting diode disposed in the light emitting area and disposed on the first epi layer, a second epi layer disposed in the driving area on the substrate, a transistor disposed in the driving area and on the second epi layer, and a connection electrode that electrically connects the light emitting diode and the transistor.

Abstract: A display device includes: a first substrate including a first area, a second area surrounding the first area, and a third area surrounding the second area; a second substrate facing the first substrate; a sealing member between the first substrate and the second substrate at the third area; a color filter layer under the second substrate; a low refractive index layer under the color filter layer, overlapping with the first area, and spaced from the sealing member; a protective layer covering the low refractive index layer, surrounding a side surface of the low refractive index layer, and including an inorganic material; and a color conversion layer under the protective layer, overlapping with the first area, and including a plurality of color conversion parts spaced from each other.

Abstract: An inkjet printing apparatus includes a base portion, an inner pipe disposed in the base portion and through which ink moves, and a nozzle extending from the inner pipe and discharging the ink. The nozzle includes a coating layer disposed on an inner side surface of the nozzle and including AlOF.

Abstract: A display device includes: a base substrate; a transistor on the base substrate and comprising a semiconductor pattern and a gate electrode; a gate insulating pattern layer on the semiconductor pattern; connection electrodes on the gate insulating pattern layer and connected to the semiconductor pattern via contact holes; and an insulating layer on the connection electrodes and the transistor, wherein the connection electrodes are on a same layer as the gate electrode, the insulating layer comprises a low transmittance layer having a light transmittance equal to or greater than 30% and equal to or smaller than 65%.

Abstract: A display device includes: a first substrate including a first area, a second area surrounding the first area, and a third area surrounding the second area; a second substrate facing the first substrate; a sealing member between the first substrate and the second substrate at the third area; a color filter layer under the second substrate; a low refractive index layer under the color filter layer, overlapping with the first area, and spaced from the sealing member; a protective layer covering the low refractive index layer, surrounding a side surface of the low refractive index layer, and including an inorganic material; and a color conversion layer under the protective layer, overlapping with the first area, and including a plurality of color conversion parts spaced from each other.

Abstract: A display device according to an embodiment includes a barrier layer on a substrate and including a trench, a first buffer layer on the barrier layer and arranged along a profile of the trench, a second buffer layer on the first buffer layer and arranged along a profile of the first buffer layer, a semiconductor layer on the second buffer layer and including a channel region overlapping the trench, a gate insulating layer on the semiconductor layer and overlapping the channel region, and a gate electrode on the gate insulating layer and overlapping the channel region, and a thickness of the first buffer layer is thinner than a thickness of the second buffer layer.

Abstract: A display device includes a transistor including a semiconductor layer and a gate electrode overlapping a channel area of the semiconductor layer and a storage capacitor electrically connected to the transistor, the storage capacitor including a first capacitor electrode disposed below the semiconductor layer, a second capacitor electrode disposed on the first capacitor electrode, and a third capacitor electrode disposed on the second capacitor electrode, the second capacitor electrode includes a lower layer, the lower layer and the semiconductor layer being disposed on a same layer, an intermediate layer disposed on the lower layer, and an upper layer disposed on the intermediate layer, and the upper layer of the second capacitor electrode includes an amorphous conductive oxide.

Abstract: A display apparatus includes a substrate, a buffer layer located on the substrate, a first thin-film transistor located on the buffer layer, the first thin-film transistor including a first semiconductor layer and a first gate electrode insulated from the first semiconductor layer. The first semiconductor layer includes an oxide semiconductor. A first inorganic insulating layer is located between the first semiconductor layer and the first gate electrode, and emits at least 1×1019 mole/cm3 of hydrogen (H2).

Abstract: A display device includes a light emitting structure disposed on a substrate, and a thin film encapsulation layer disposed on the light emitting structure and including an inorganic layer containing silicon oxynitride and an organic layer. A portion of the inorganic layer has a stress intensity factor of about 1.6 MPa or more.

Abstract: A display device includes: a first base substrate; a display structure on the first base substrate; a bank portion on the display structure and defining a pixel opening and a dummy opening adjacent to the pixel opening; a color conversion layer in the pixel opening of the bank portion; and a capping layer covering the bank portion and the color conversion layer and including: a first layer on the bank portion and including silicon oxide; and a second layer on the first layer and including silicon oxynitride in the dummy opening.

Abstract: A display device includes a light emitting structure disposed on a substrate, and a thin film encapsulation layer disposed on the light emitting structure and including an inorganic layer containing silicon oxynitride and an organic layer. A portion of the inorganic layer has a stress intensity factor of about 1.6 MPa or more.

Abstract: A display device includes: a first substrate including a first area, a second area surrounding the first area, and a third area surrounding the second area; a second substrate facing the first substrate; a sealing member between the first substrate and the second substrate at the third area; a color filter layer under the second substrate; a low refractive index layer under the color filter layer, overlapping with the first area, and spaced from the sealing member; a protective layer covering the low refractive index layer, surrounding a side surface of the low refractive index layer, and including an inorganic material; and a color conversion layer under the protective layer, overlapping with the first area, and including a plurality of color conversion parts spaced from each other.

Abstract: A display device includes a thin film transistor including an active layer, a gate electrode on the active layer, and an electrode layer having a first stress, the electrode layer including a source electrode and a drain electrode, a light emission layer facing the thin film transistor, and a first passivation layer between the thin film transistor and the light emission layer and covering the thin film transistor, the first passivation layer having a second stress. A difference between an absolute value of the first stress and an absolute value of the second stress is about 600 megapascals or less.

Abstract: A display device includes a substrate, a low refractive index layer disposed on the substrate, a first capping layer disposed on the low refractive index layer and directly contacting an upper surface of the low refractive index layer, a second capping layer disposed on the first capping layer, and a wavelength conversion layer disposed on the second capping layer and having a refractive index higher than a refractive index of the low refractive index layer, wherein a nitrogen atomic ratio of the first capping layer is different from a nitrogen atomic ratio of the second capping layer.

Abstract: Provided is a display device. The display device includes: a first display substrate; a second display substrate including a non-display region and first, second, and third pixel regions; and a sealing member overlapping the non-display region when viewed on a plane and between the first display substrate and the second display substrate. A dam pattern is arranged or a trench pattern is defined on a lower surface of the second display substrate. The dam pattern and the trench pattern control flow of a liquid organic material provided in the display region. An organic layer is formed only inside the dam pattern and the trench pattern so that a path into which moisture is introduced is not formed. This is because the organic layer is not on an outer region of a pattern on which the sealing member is located and the trench pattern.

Abstract: A color conversion substrate includes a base substrate, a color filter layer on the base substrate, a low refractive index layer on the color filter layer, a capping layer on the low refractive index layer, where the capping layer includes a first capping film including silicon oxynitride (SiOxNy) having a nitrogen content in a range of about 10 at % to about 35 at %, a bank on the capping layer, where an opening defining a plurality of pixels is defined in the bank, and a color conversion layer on the capping layer in the opening.