Abstract: A method for fabricating an integrated circuit includes forming a first gate electrode structure above a first active region and a second gate electrode structure above a second active region, forming a sacrificial spacer on sidewalls of the first and second gate electrode structures, and forming deep drain and source regions selectively in the first and second active regions by using the sacrificial spacer as an implantation mask. The method further includes forming drain and source extension and halo regions in the first and second active regions after removal of the sacrificial spacer and forming a fluorine implant region in the halo region of the first active region before or after formation of the drain and source extension and halo regions.

Abstract: A method for fabricating an integrated circuit includes forming a first gate electrode structure above a first active region and a second gate electrode structure above a second active region, forming a sacrificial spacer on sidewalls of the first and second gate electrode structures, and forming deep drain and source regions selectively in the first and second active regions by using the sacrificial spacer as an implantation mask. The method further includes forming drain and source extension and halo regions in the first and second active regions after removal of the sacrificial spacer and forming a nitrogen implant region in the halo region of the first active region after formation of the drain and source extension and halo regions.

Abstract: When forming cavities in active regions of semiconductor devices in order to incorporate a strain-inducing semiconductor material, an improved shape of the cavities may be achieved by using an amorphization process and a heat treatment so as to selectively modify the etch behavior of exposed portions of the active regions and to adjust the shape of the amorphous regions. In this manner, the basic configuration of the cavities may be adjusted with a high degree of flexibility. Consequently, the efficiency of the strain-inducing technique may be improved.

Abstract: Methods for forming P-type channel metal-oxide-semiconductor field effect transistors (PMOSFETs) with improved interface roughness at the channel silicon-germanium (cSiGe) layer and the resulting devices are disclosed. Embodiments may include designating a region in a substrate as a channel region, forming a cSiGe layer above the designated channel region, and implanting fluorine directly into the cSiGe layer. Embodiments may alternatively include implanting fluorine into a region in a silicon substrate designated a channel region, forming a cSiGe layer above the designated channel region, and heating the silicon substrate and the cSiGe layer to diffuse the fluorine into the cSiGe layer.

Abstract: The present disclosure provides, in some aspects, a gate electrode structure for a semiconductor device. In some illustrative embodiments herein, the gate electrode structure includes a first high-k dielectric layer over a first active region of a semiconductor substrate and a second high-k dielectric layer on the first high-k dielectric layer. The first high-k dielectric layer has a metal species incorporated therein for adjusting the work function of the first high-k dielectric layer.

Abstract: A method for forming a semiconductor device is provided which includes providing a gate structure in an active region of a semiconductor substrate, wherein the gate structure includes a gate insulating layer having a high-k material, a gate metal layer and a gate electrode layer, forming sidewall spacers adjacent to the gate structure and, thereafter, performing a fluorine implantation process. Also a method for forming a CMOS integrated circuit structure is provided which includes providing a semiconductor substrate with a first active region and a second active region, forming a first gate structure in the first active region and a second gate structure in the second active region, wherein each gate structure includes a gate insulating layer having a high-k material, a gate metal layer and a gate electrode layer, forming sidewall spacers adjacent to each of the first and second gate structures and, thereafter, performing a fluorine implantation process.

Abstract: Integrated circuits and methods for fabricating integrated circuits are provided herein. In an embodiment, a method for fabricating an integrated circuit includes forming over a semiconductor substrate a gate structure. The method further includes depositing a non-conformal spacer material around the gate structure. A protection mask is formed over the non-conformal spacer material. The method etches the non-conformal spacer material and protection mask to form a salicidation spacer. Further, a self-aligned silicide contact is formed adjacent the salicidation spacer.

Abstract: A method of fabricating a semiconductor device with improved Vt and the resulting device are disclosed. Embodiments include forming an HKMG stack on a substrate; implanting dopants in active regions of the substrate; and performing an RTA in an environment of nitrogen and no more than 30% oxygen.

Abstract: The present invention relates to a new synthetic process in which an alkyne and an azide react to form a radioisotopic bioconjugate construct. The reaction is particularly useful for producing compounds for use in imaging and radiotherapy applications. The present invention also provides bioconjugate labels and further relates to the use of these compounds in diagnostic and therapeutic methods. In addition, the invention provides a related process for introducing a radioisotopic halogen atom into a terminal alkyne.

Abstract: An apparatus for and a method of performing packet detection in a receiver is provided. The apparatus is configured to determine a measure of a correlation between information of one or more received symbols and synchronization information. The apparatus is also configured to determine a measure of an energy value of one or more of the received symbols. The apparatus is also configured to determine if a packet has been detected based on the measure of the correlation and the measure of the energy value of the one or more received symbols.

Abstract: An automatic gain control method and system for use in signal processing of OFDM symbols at a receiver. Two stages of coarse and fine automatic gain control are implemented that adjust different gains in an analog RF processing stage of the receiver. Gain of a low noise amplifier and a mixer are adjusted during a first and coarse automatic gain control stage based on feedback from a digital baseband stage. During a subsequent fine gain control period, the gain of a programmable gain amplifier is adjusted separately for each frequency band used by the OFDM symbols based on a histogram bin that counts the number of output samples of an analog to digital converter whose magnitude falls within certain ranges. Coarse and fine gains are updated after each OFDM symbol.

Abstract: A process comprising substitution of an acceptor molecule comprising a group —XC(O)— wherein X is O, S, or NR8, where R8 is C1-6 alkyl, C6-12 aryl or hydrogen, with a nucleophile, wherein the acceptor molecule is cyclised such that said nucleophilic substitution at —XC(O)— occurs without racemization, is provided. This process has particular application for the production of a peptide by extension from the activated carboxy-terminus of an acyl amino acid residue without epimerization.

Abstract: An automatic gain control method and system for use in signal processing of OFDM symbols at a receiver. Two stages of coarse and fine automatic gain control are implemented that adjust different gains in an analog RF processing stage of the receiver. Gain of a low noise amplifier and a mixer are adjusted during a first and coarse automatic gain control stage based on feedback from a digital baseband stage. During a subsequent fine gain control period, the gain of a programmable gain amplifier is adjusted separately for each frequency band used by the OFDM symbols based on a histogram bin that counts the number of output samples of an analog to digital converter whose magnitude falls within certain ranges. Coarse and fine gains are updated after each OFDM symbol.

Abstract: The present invention provides a process comprising substitution of an acceptor molecule comprising a group —XC(O)— wherein X is O, S or NR8, where R8 is C1-6 alkyl, C6-12 aryl or hydrogen, with a nucleophile, wherein the acceptor molecule is cyclised such that said nucleophilic substitution at —XC (O)— occurs without racemisation. This process has particular application for the production of a peptide by extension from the activated carboxy-terminus of an acyl amino acid residue without epimerisation.

Abstract: An automatic gain control method and system for use in signal processing of OFDM symbols at a receiver. Two stages of coarse and fine automatic gain control are implemented that adjust different gains in an analog RF processing stage of the receiver. Gain of a low noise amplifier and a mixer are adjusted during a first and coarse automatic gain control stage based on feedback from a digital baseband stage. During a subsequent fine gain control period, the gain of a programmable gain amplifier is adjusted separately for each frequency band used by the OFDM symbols based on a histogram bin that counts the number of output samples of an analog to digital converter whose magnitude falls within certain ranges. Coarse and fine gains are updated after each OFDM symbol.

Abstract: An iodonium compound of formula (I): where RAR1 is a C5-6 aryl group, bearing at least one substituent selected from formyl, thionoacyl, acylamidocarboxy, thionoester, azo, C2-20 alkenyl, C2-20 alkynyl, and (CH2)nRC, where RC is selected from ether, amino, azo and thioether; RAR2 is a C5-10 aryl group, optionally substituted by one or more groups selected from C1-12 alkyl, C5-12 aryl, C3-12 heterocyclyl, ether, thioether, nitro, cyano and halo, and may be linked to a solid support or fluorous tag; and X is a counteranion.

Abstract: The present invention provides a process comprising substitution of an acceptor molecule comprising a group —XC(O)— wherein X is O, S or NR8, where R8 is C1-6 alkyl, C6-12 aryl or hydrogen, with a nucleophile, wherein the acceptor molecule is cyclised such that said nucleophilic substitution at —XC (O)— occurs without racemisation. This process has particular application for the production of a peptide by extension from the activated carboxy-terminus of an acyl amino acid residue without epimerisation.

Abstract: A process comprising substitution of an acceptor molecule comprising a group —XC(O)— wherein X is O, S, or NR8, where R8 is C1-6 alkyl, C6-12 aryl or hydrogen, with a nucleophile, wherein the acceptor molecule is cyclised such that said nucleophilic substitution at —XC(O)— occurs without racemisation, is provided. This process has particular application for the production of a peptide by extension from the activated carboxy-terminus of an acyl amino acid residue without epimerisation.

Abstract: A direct conversion ultrawideband transceiver employing three phase locked loops (PLLs). The PLLs are preferably fixed-frequency PLLs that operate continuously, at different frequencies, with a selected frequency determined by selecting the output of one of the three PLLs. The use of three PLLs is suitable for use in a communication system employing frequency hopping across three bands or sub-bands.

Abstract: An automatic gain control method and system for use in signal processing of OFDM symbols at a receiver. Two stages of coarse and fine automatic gain control are implemented that adjust different gains in an analog RF processing stage of the receiver. Gain of a low noise amplifier and a mixer are adjusted during a first and coarse automatic gain control stage based on feedback from a digital baseband stage. During a subsequent fine gain control period, the gain of a programmable gain amplifier is adjusted separately for each frequency band used by the OFDM symbols based on a histogram bin that counts the number of output samples of an analog to digital converter whose magnitude falls within certain ranges. Coarse and fine gains are updated after each OFDM symbol.