Abstract: Examples are disclosed related to using an inhibitor in an atomic layer deposition (ALD) process to deposit a film in a patterning process. One example provides a method of processing a substrate comprising a gap between spacers. The method comprises performing a plurality of atomic layer deposition (ALD) cycles to fill the gap between the spacers with an oxide film. An ALD cycle of the plurality of ALD cycles comprises exposing the substrate to an inhibitor under conditions configured to deposit inhibitor at a first depth within the gap at a relatively greater concentration than at a second depth within the gap. The second depth is deeper in the gap than the first depth. The method further comprises, after filling the gap between the spacers, performing an etching cycle to expose the spacers. The method further comprises removing the spacers.

Abstract: A substrate processing system is provided and includes a substrate support, a memory, and calibration, operating parameter, and solving modules. The substrate support supports a substrate and includes temperature control elements. The memory stores, for the temperature control elements, temperature calibration values and sensitivity calibration values. The calibration module, during calibration of the temperature control elements, performs a first calibration process to determine the temperature calibration values or a second calibration process to determine the sensitivity calibration values. The sensitivity calibration values relate at least one of trim amounts or deposition amounts to temperature changes. The operating parameter module determines operating parameters for the temperature control elements based on the temperature and sensitivity calibration values.

Abstract: Examples are disclosed that relate to layered metal oxide films. One example provides a method of forming a patterning structure. The method comprises performing one or more layered film deposition cycles to form a layered film comprising a metal oxide. A layered film deposition cycle of the one or more layered deposition cycles comprises a metal oxide deposition subcycle and a silicon oxide deposition cycle. The metal oxide deposition subcycle comprises exposing the substrate to a metal-containing precursor and oxidizing metal-containing precursor adsorbed to the substrate. The silicon oxide deposition subcycle comprising exposing a substrate to a silicon-containing precursor and oxidizing silicon-containing precursor adsorbed to the substrate. The method further comprises etching one or more regions of the layered film to form the patterning structure.

Abstract: Methods of depositing silicon-containing films by plasma-enhanced atomic layer deposition (PEALD) are described and can include one or more techniques to provide a chemical vapor deposition (CVD)-type component.

Abstract: A method for performing a feedback sequence for patterning CD control. The method including performing a series of process steps on a wafer to obtain a plurality of features, wherein a process step is performed under a process condition. The method including measuring a dimension of the plurality of features after performing the series of process steps. The method including determining a difference between the dimension that is measured and a target dimension for the plurality of features. The method including modifying the process condition for the process step based on the difference and a sensitivity factor for the plurality of features relating change in dimension and change in process condition.

Abstract: A method comprising: providing a substrate in a processing station comprising a substrate support and a showerhead, the substrate comprising a gap to be filled; and depositing silicon-containing film in the gap by a plasma-enhanced atomic layer deposition (PEALD) process comprising multiple cycles of operations (a)-(d): (a) a dose operation comprising flowing a silicon-containing precursor into the processing station via the showerhead to allow the silicon-containing precursor to adsorb onto the substrate; (b) after (a), flowing a purge gas into the processing station; (c) after (b), exposing the substrate to plasma species to react with the adsorbed silicon-containing precursor; and (d) after (c), flowing a purge gas into the processing station, wherein the silicon-containing precursor continues to flow into the processing station during at least (b).

Abstract: Examples are disclosed that relate to using a carbon-containing inhibitor to grow an oxide film nonconformally on a substrate. One example comprises performing a plurality of oxide film deposition cycles, at least one oxide film deposition cycle of the plurality of oxide film deposition cycles comprising exposing the substrate to an oxide-film precursor to adsorb oxide-film precursor to the substrate, exposing the substrate to an oxygen-containing gas, reacting the oxide-film precursor and the oxygen-containing gas, and exposing the substrate to a carbon-containing inhibitor.

Abstract: Techniques for processing a service request are disclosed. An example method includes receiving, from a client device, a request specifying a service that consumes a resource. The method includes generating, by a neural network and without using a forecast for future utilization of the resource, a response to the request. The response includes a prediction of an opportunity cost of consumption of the resource. Generating the response is based on a remaining capacity of the resource and a remaining time to expiration of the resource. The method also includes providing, to the client device, an access to the service based on the response.

Abstract: A display system increases a number of supported regions of interest and allowing for a dynamic background image by offloading region of interest calculations and data integrity checks from a display controller to a parallel processor of the display system. The parallel processor calculates a configurable number of regions of interest of a frame and error checks each of the regions of interest before transmitting the frame to the display controller.

Abstract: A substrate processing system includes a processing chamber, a substrate support including a plurality of heater zones arranged in the processing chamber, a gas delivery system configured to deliver process gases to the processing chamber, and a controller configured to communicate with the gas delivery system and the plurality of heater zones, initiate a first treatment step of a process during a transient temperature period after a substrate is arranged on the substrate support and prior to the substrate reaching a steady-state temperature of the substrate support, and adjust heating to each of the plurality of heater zones during the first treatment step based on average heat functions determined for corresponding ones of the plurality of heater zones during a period corresponding to the first treatment step.

Abstract: Mirror arrangements for a magneto-optical trap are described. A mirror arrangement comprises: a first deflector mirror; a second deflector mirror; a first combiner mirror; and a second combiner mirror. The mirrors are arranged to provide two orthogonal counter propagating beam pairs in a plane. A second mirror arrangement additionally comprises a third deflector mirror; a fourth deflector mirror; a third combiner mirror; and a fourth combiner mirror. The mirrors are arranged to provide three orthogonal counter propagating beam pairs.

Abstract: Techniques for training a prediction model are disclosed. An example method includes processing historical event data comprising a plurality of computer-readable events for a resource to determine previous parameters for the resource. The method also includes generating training data for training the prediction model without using a forecast for future utilization of the resource. The training data comprises a set of proxies generated from previous parameters for the resource. Each proxy is associated with a remaining capacity of the resource and a remaining time to expiration of the resource. The method also includes training the prediction model to generate a mapping from the remaining capacity of the resource and the remaining time to expiration of the resource to the proxy. The method also includes receiving a request that describes a potential future event pertaining to the resource and generating a prediction for the potential future event using the prediction model.

Abstract: Methods and apparatus to control airflow in foldable computing devices are disclosed. A disclosed apparatus for use with a foldable computing device includes a barrier carried by at least one of a first folding portion or a second folding portion of the computing device, the first folding portion rotatable relative to the second folding portion, and an actuator to move the barrier in response to a rotation between the first and second folding portions to reduce a flow of air into the foldable computing device.

Abstract: A substrate support assembly includes a baseplate including a layer adjacent to a substrate, M resistive heaters respectively arranged in M zones in the layer, and N temperature sensors arranged at N locations in the layer. M and N are integers, and N is less than or equal to M. The M zones include a first circular zone located at a center region of the layer, a second annular zone surrounding the first circular zone, and a first set of zones located in a first annular region surrounding the second annular zone. The N temperature sensors include a first pair of temperature sensors located at a first boundary between the second annular zone and the first set of zones along a first diameter of the layer, and a first temperature sensor located in the first circular zone at an intersection of the first and second diameters.

Abstract: In an embodiment, an apparatus for synthetic data generation is presented. The apparatus includes a processor and a memory communicatively connected to the processor. The memory contains instructions configured to the processor to receive data. The processor is configured to input the data into a generative framework. The generative framework includes a first category of synthetic data generation and a second category of synthetic data generation. The generative framework is configured to input data an output synthetic data through at least a category of synthetic data generation. The processor is configured to generate, based on the generative framework, synthetic data from the received data.

Abstract: A substrate processing apparatus includes a processing chamber and a rotating mechanism. The rotating mechanism is configured to rotate about a center axis of a shaft, where the shaft includes a flow path configured to flow gases through the shaft.

Abstract: A system to process a semiconductor substrate includes a substrate support assembly configured to support the semiconductor substrate. The substrate support assembly includes M resistive heaters respectively arranged in M zones in a layer of the substrate support assembly, where M is an integer greater than 1. The layer is adjacent to the semiconductor substrate. The substrate support assembly includes N temperature sensors arranged at N locations in the layer, where N is an integer greater than 1 and less than or equal to M. The system further includes a controller configured to control one or more of the M resistive heaters based on a temperature sensed by one of the N temperature sensors and average temperatures of one or more of the M zones.

Abstract: A method for evacuating a volume below a substrate in a substrate processing system includes arranging the substrate on a lift mechanism of a substrate support to define the volume below the substrate between the substrate and an upper surface of the substrate support. An evacuation step is initiated to evacuate the volume below the substrate. The evacuation step includes pumping down the volume below the substrate at least one of through and around the lift mechanism. The lift mechanism is lowered during the evacuation step to position the substrate on the upper surface of the substrate support and the evacuation step is terminated.

Abstract: A substrate processing system is provided and includes a substrate support, a memory, and calibration, operating parameter, and solving modules. The substrate support supports a substrate and includes temperature control elements. The memory stores, for the temperature control elements, temperature calibration values and sensitivity calibration values. The calibration module, during calibration of the temperature control elements, performs a first calibration process to determine the temperature calibration values or a second calibration process to determine the sensitivity calibration values. The sensitivity calibration values relate at least one of trim amounts or deposition amounts to temperature changes. The operating parameter module determines operating parameters for the temperature control elements based on the temperature and sensitivity calibration values.