Abstract: A semiconductor processing apparatus including a processing chamber and a plurality of radiant heat sources. The radiant heat sources heat a workpiece within the chamber. At least one of the radiant heat sources is movable during processing in an oscillatory motion along a path less than about 10 mm from a geometric center of the oscillatory motion.

Abstract: A self-centering susceptor ring assembly is provided. The susceptor ring assembly includes a susceptor ring support member and a susceptor ring supported on the susceptor ring support member. The susceptor ring support member includes at least three pins extending upwardly relative to the lower inner surface of the reaction chamber. The susceptor ring includes at least three detents formed in a bottom surface to receive the pins from the susceptor ring support member. The detents are configured to allow the pins to slide therewithin while the susceptor ring thermally expands and contracts, wherein the detents are sized and shaped such that as the susceptor ring thermally expands and contracts the gap between the susceptor ring and the susceptor located within the aperture of the susceptor ring remains substantially uniform about the entire circumference of the susceptor, and thereby maintains the same center axis.

Abstract: A substrate support system comprises a substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder supports a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. A hollow support member provides support to an underside of, and is configured to convey gas upward into one or more of the passages of, the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment, the gas then flows either outward and upward around the substrate edge (to inhibit backside deposition of reactant gases above the substrate) or downward through passages of the substrate holder, if any, that do not lead back into the hollow support member (to inhibit autodoping by sweeping out-diffused dopant atoms away from the substrate backside).

Abstract: A one-piece susceptor ring for housing at least one temperature measuring device is provided. The susceptor ring includes a plate having an aperture formed therethrough and a pair of side ribs integrally connected to a lower surface of the plate. The side ribs are located on opposing sides of the aperture. The susceptor ring further includes a bore formed in each of the pair of side ribs. Each bore is configured to receive a temperature measuring device therein.

Abstract: A substrate support system comprises a substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder supports a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. A hollow support member provides support to an underside of, and is configured to convey gas upward into one or more of the passages of, the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment, the gas then flows either outward and upward around the substrate edge (to inhibit backside deposition of reactant gases above the substrate) or downward through passages of the substrate holder, if any, that do not lead back into the hollow support member (to inhibit autodoping by sweeping out-diffused dopant atoms away from the substrate backside).

Abstract: An apparatus for processing substrates may include a substrate handling chamber having a substrate load port on a side wall, and a movable platform movably engaged with the handling chamber between a first position and a second position. The first position is such that a substrate carrier on the movable platform is inaccessible by a substrate handling robot inside the chamber. The second position is near to the load port such that a substrate carrier on the movable platform is accessible by a substrate handling robot inside the handling chamber. The movable platform is configured to rotate about a generally vertical axis between the first and second positions.

Abstract: Systems are provided for measuring temperature in a semiconductor processing chamber. Embodiments provide a multi-junction thermocouple comprising a first junction and a second junction positioned to measure temperature at substantially the same portion of a substrate. A controller may detect failures in the first junction, the second junction, a first wire pair extending from the first junction, or a second wire pair extending from the second junction. The controller desirably responds to a detected failure of the first junction or first wire pair by selecting the second junction and second wire pair. Conversely, the controller desirably responds to a detected failure of the second junction or second wire pair by selecting the first junction and first wire pair. Systems taught herein may permit accurate and substantially uninterrupted temperature measurement despite failure of a junction or wire pair in a thermocouple.

Abstract: Methods and systems for calibrating a temperature control system in a vapor deposition chamber. A temperature sensor senses temperature within a semiconductor processing chamber and generates an output signal. A temperature control system controls a chamber temperature by controlling a heating apparatus based on the output signal. A method includes instructing the control system to target a setpoint temperature, and depositing a layer of material onto a surface in the chamber by a vapor deposition process. A variation of a property of the layer is measured while depositing the layer, the property known to vary cyclically as a thickness of the layer increases. The measured property is allowed to vary cyclically for one or more cycles. If there is a difference between a time period of one or more of the cycles and an expected time period associated with the setpoint temperature, the temperature control system is adjusted based on the difference.

Abstract: A reaction apparatus for a semiconductor fabrication apparatus, wherein the reaction apparatus includes at least two adjustable outlet ports for withdrawing reactant gases from the reaction chamber. Adjustment of the flow rate through each of the outlet ports selectively modifies the flow pattern of the reactant gases within the reaction chamber to maintain a desired flow pattern therewithin, such as a substantially uniform flow over the surface of a substrate being processed, and/or minimization of turbulence within the reactor.

Abstract: An arrangement of short linear heat lamps is provided which allows for localized control of temperature nonuniformities in a substrate during semiconductor processing. A reactor includes a substrate holder positioned between a top bank and a bottom bank of linear heat lamps. Alternatively, only one such bank may be provided. At least one of the banks includes lamps of a plurality of different lengths, at least some of the lengths being shorter than a diameter of the substrate holder. In some configurations, the lamps in a bank are disposed substantially parallel to each other in a repeating pattern. In some other configurations, the lamps in a bank are disposed in a radial direction with respect to a vertical axis of the substrate holder. Power output of the short lamps can be adjusted individually or in groups to provide localized control of temperature of the substrate.

Abstract: An apparatus for processing substrates may include a substrate handling chamber having a substrate load port on a side wall, and a movable platform movably engaged with the handling chamber between a first position and a second position. The first position is such that a substrate carrier on the movable platform is inaccessible by a substrate handling robot inside the chamber. The second position is near to the load port such that a substrate carrier on the movable platform is accessible by a substrate handling robot inside the handling chamber. The movable platform is configured to rotate about a generally vertical axis between the first and second positions.

Abstract: A semiconductor processing apparatus including a processing chamber and a plurality of radiant heat sources. The radiant heat sources heat a workpiece within the chamber. At least one of the radiant heat sources is movable during processing in an oscillatory motion along a path less than about 10 mm from a geometric center of the oscillatory motion.

Abstract: This invention relates to an apparatus and a method for cooling a semiconductor wafer while it is being transferred from one station to another. More particularly, the invention relates to an active cooling system in the end effecter of a robot used for moving a semiconductor wafer from one process station to another.

Abstract: An improved exhaust conductance system for a semiconductor process apparatus includes at least two parallel exhaust paths and a valve apparatus for controlling flow to the exhaust paths. The valve apparatus prevents the flow of process gases through one or more of the exhaust paths but simultaneously allows the flow of process gases through at least one other exhaust path. The inactive exhaust paths can be purged or cleaned without resulting in processing downtime to the system.

Abstract: A substrate to be processed in a high temperature processing chamber is preheated to avoid the problems associated with thermal shock when the substrate is dropped onto a heated susceptor. Preheating is effected by holding the substrate over a susceptor maintained at or near the processing temperature until the temperature of the substrate approaches the processing temperature. Thus, wafer warping and breakage are greatly reduced, and wafer throughput is improved because of time saved in maintaining the susceptor at constant temperature without cool down and reheat periods.

Abstract: A slit valve for a semiconductor processing apparatus, for fluidly sealing a passage connecting two chambers of the apparatus, such as a substrate reaction chamber and a region outside the reaction chamber. The slit valve comprises an actuator plate movable within a slot in one wall of the passage, the actuator plate and the slot oriented generally transverse to the passage. The actuator plate has a first position in which the valve is open, permitting the transfer of a substrate through the passage. The actuator plate also has a second position in which the valve is closed, and in which the actuator plate fluidly seals the passage such that fluid cannot flow through the passage across the actuator plate. A protective cover is configured to prevent debris within the passage (e.g., broken wafers, shards, particulate contaminants, etc.) from flowing into the slot when the actuator plate occupies its second position.

Abstract: A stationary cooling station for cooling wafers after the wafers have been subjected to semiconductor processing supports the wafer by flowing gas in accordance with the Bernoulli principle. An upper wall of the cooling station contains a plurality of gas outlets that direct gas to flow over the top surface of the wafer. In this way, a low-pressure region is created over the wafer and the wafer is suspended within the cooling station, without directly contacting any surface for support. In addition to providing lift for the wafer, the gas is a thermally conductive gas that can cool the wafer by conducting heat away from it.

Abstract: An in-line, non-freestanding substrate measurement system is integrated into the substrate fabrication pathway. One embodiment includes a metrology device integrated into a guided vehicle. Another embodiment provides a system for simultaneously measuring both sides of a substrate. A metrology device may be integrated into the front handling chamber of a process tool. Other embodiments provide methods for the measurement of substrates using pathway integrated metrology devices.

Abstract: A wafer carrier adapted to hold a plurality of wafers and is positioned on an elevator plate in a load lock. The elevator plate is adapted to move between a first position with the carrier in a first chamber of the load lock and a second position with the carrier in the auxiliary chamber. In the second position, the elevator plate substantially seals the auxiliary chamber from the first chamber. In use, a first wafer is placed onto the wafer carrier. The wafer carrier can moved into the auxiliary chamber before or after the first wafer is placed onto the wafer carrier. The first wafer is auxiliary processed in the auxiliary chamber. A second wafer is placed onto the wafer carrier. Preferably after the second wafer is placed onto the wafer carrier, the first wafer is removed from the load lock. A third wafer is preferably then placed onto the wafer carrier so that the second wafer can cool. The second wafer is then removed from the load lock. The cycle is repeated.