Abstract: A load port comprises a platform for receiving a FOUP. The platform includes features for manually removing a FOUP door. The platform also includes features for placing the FOUP in operative relation to a wafer transfer robot configured to transfer wafers between first and second containers.

Abstract: A substrate support system comprises a relatively thin circular substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder includes a single substrate support ledge or a plurality of substrate support spacer vanes configured to support a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. The vanes can be angled to resist backside deposition of reactant gases as the substrate holder is rotated. A hollow support member provides support to an underside of the substrate holder. The hollow support member is configured to convey gas (e.g., inert gas or cleaning gas) upward into one or more of the passages of the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder.

Abstract: A slit valve for a semiconductor processing apparatus, for fluidly sealing a passage connecting two chambers of the apparatus, such as a substrate reaction chamber and a region outside the reaction chamber. The slit valve comprises an actuator plate movable within a slot in one wall of the passage, the actuator plate and the slot oriented generally transverse to the passage. The actuator plate has a first position in which the valve is open, permitting the transfer of a substrate through the passage. The actuator plate also has a second position in which the valve is closed, and in which the actuator plate fluidly seals the passage such that fluid cannot flow through the passage across the actuator plate. A protective cover is configured to prevent debris within the passage (e.g., broken wafers, shards, particulate contaminants, etc.) from flowing into the slot when the actuator plate occupies its second position.

Abstract: Disclosed herein is an apparatus and method for treating the frontside and backside of a semiconductor substrate with a process gas. A reactor chamber is equipped with a first load platform configured to permit the access of a process gas to both sides of a substrate. In some embodiments, the apparatus also comprises a second load platform configured for further processing the frontside of the substrate. The substrate is loaded on the first load platform and processed on both sides, then moved to the second load platform and processed on one side.

Abstract: A sealing member provides a seal between a front opening unified pod (FOUP) and a semiconductor processing tool. The seal inhibits fluid flow between an ambient environment and a minienvironment in a front end of the processing tool while the FOUP and minienvironment are open to one another for transporting wafers between the processing tool and the FOUP.

Abstract: A stationary cooling station for cooling wafers after the wafers have been subjected to semiconductor processing supports the wafer by flowing gas in accordance with the Bernoulli principle. An upper wall of the cooling station contains a plurality of gas outlets that direct gas to flow over the top surface of the wafer. In this way, a low-pressure region is created over the wafer and the wafer is suspended within the cooling station, without directly contacting any surface for support. In addition to providing lift for the wafer, the gas is a thermally conductive gas that can cool the wafer by conducting heat away from it.

Abstract: A front opening unified pod (FOUP) used for temporarily and portably storing semiconductor wafers between processing steps includes a manifold for uniformly distributing a purge gas in the FOUP during a purging process between wafer processing steps. The manifold can be a variety of shapes, and can be located in a number of appropriate locations within the FOUP. The manifold generally extends the full height of the FOUP and includes a plurality of openings configured to direct a flow of purge gas above and below each wafer held by the FOUP.

Abstract: A stationary cooling station for cooling wafers after the wafers have been subjected to semiconductor processing supports the wafer by flowing gas in accordance with the Bernoulli principle. An upper wall of the cooling station contains a plurality of gas outlets that direct gas to flow over the top surface of the wafer. In this way, a low-pressure region is created over the wafer and the wafer is suspended within the cooling station, without directly contacting any surface for support. In addition to providing lift for the wafer, the gas is a thermally conductive gas that can cool the wafer by conducting heat away from it.

Abstract: A slit valve for a semiconductor processing apparatus, for fluidly sealing a passage connecting two chambers of the apparatus, such as a substrate reaction chamber and a region outside the reaction chamber. The slit valve comprises an actuator plate movable within a slot in one wall of the passage, the actuator plate and the slot oriented generally transverse to the passage. The actuator plate has a first position in which the valve is open, permitting the transfer of a substrate through the passage. The actuator plate also has a second position in which the valve is closed, and in which the actuator plate fluidly seals the passage such that fluid cannot flow through the passage across the actuator plate. A protective cover is configured to prevent debris within the passage (e.g., broken wafers, shards, particulate contaminants, etc.) from flowing into the slot when the actuator plate occupies its second position.

Abstract: A stationary cooling station for cooling wafers after the wafers have been subjected to semiconductor processing supports the wafer by flowing gas in accordance with the Bernoulli principle. An upper wall of the cooling station contains a plurality of gas outlets that direct gas to flow over the top surface of the wafer. In this way, a low-pressure region is created over the wafer and the wafer is suspended within the cooling station, without directly contacting any surface for support. In addition to providing lift for the wafer, the gas is a thermally conductive gas that can cool the wafer by conducting heat away from it.

Abstract: An apparatus for processing a semiconductor substrate, including a process chamber having a plurality of walls and a substrate support to support the substrate within the process chamber. A radiative heat source is positioned outside the process chamber to heat the substrate through the walls when the substrate is positioned on the substrate support. In some embodiments, lenses are positioned between the heat source and the substrate to focus or diffuse radiation from the heat source and thereby selectively alter the radiation intensity incident on certain portions of the substrate. In other embodiments, diffusing surfaces are positioned between the heat source and the substrate to diffuse radiation from the heat source and thereby selectively reduce the radiation intensity incident on certain portions of the substrate.

Abstract: A wafer holder for supporting a wafer within a CVD processing chamber includes a vertically moveable lift ring configured to support the bottom peripheral surface of the wafer, and an inner plug having a top flat surface configured to support the wafer during wafer processing. The lift ring has a central aperture configured to closely surround the inner plug. When a wafer is to be loaded onto the wafer holder, the lift ring is elevated above the inner plug. The wafer is loaded onto the lift ring in the elevated position. Then, the lift ring is maintained in the elevated position for a time period sufficient to allow the wafer temperature to rise to a level that is sufficient to significantly reduce or even substantially prevent thermal shock to the wafer when the wafer is brought into contact with the inner plug. The lift ring is then lowered into surrounding engagement with the inner plug. This is the wafer processing position of the wafer holder.

Abstract: A front opening unified pod (FOUP) used for temporarily and portably storing semiconductor wafers between processing steps includes a manifold for uniformly distributing a purge gas in the FOUP during a purging process between wafer processing steps. The manifold can be a variety of shapes, and can be located in a number of appropriate locations within the FOUP. The manifold generally extends the full height of the FOUP and includes a plurality of openings configured to direct a flow of purge gas above and below each wafer held by the FOUP.

Abstract: An apparatus for processing a semiconductor substrate is provided. The apparatus comprises a process chamber having a plurality of walls and a substrate support to support the substrate within the process chamber. A radiative heat source is positioned outside the process chamber to heat the substrate through the walls when the substrate is positioned on the substrate support. In some embodiments, lenses are provided between the heat source and the substrate to focus or diffuse radiation from the heat source and thereby selectively alter the radiation intensity incident on certain portions of the substrate. In other embodiments, diffusing surfaces are provided between the heat source and the substrate to diffuse radiation from the heat source and thereby selectively reduce the radiation intensity incident on certain portions of the substrate.

Abstract: A substrate fabrication system is provided which includes a buffer station located inline between a front docking port and a loadlock chamber, the buffer station being operatively joined with a front handling chamber. Preferred embodiments employ a buffer station having a rack with reduced pitch, or relative spacing between shelves. Additional embodiments provide variable pitch end effectors as part of the disclosed fabrication system.

Abstract: A substrate to be processed in a high temperature processing chamber is preheated to avoid the problems associated with thermal shock when the substrate is dropped onto a heated susceptor. Preheating is effected by holding the substrate over a susceptor maintained at or near the processing temperature until the temperature of the substrate approaches the processing temperature. Thus, wafer warping and breakage are greatly reduced, and wafer throughput is improved because of time saved in maintaining the susceptor at constant temperature without cool down and reheat periods.

Abstract: A substrate to be processed in a high temperature processing chamber is preheated to avoid the problems associated with thermal shock when the substrate is dropped onto a heated susceptor. Preheating is effected by holding the substrate over a susceptor maintained at or near the processing temperature until the temperature of the substrate approaches the processing temperature. Thus, wafer warping and breakage are greatly reduced, and wafer throughput is improved because of time saved in maintaining the susceptor at constant temperature without cool down and reheat periods.

Abstract: A slit valve for a semiconductor processing apparatus, for fluidly sealing a passage connecting two chambers of the apparatus, such as a substrate reaction chamber and a region outside the reaction chamber. The slit valve comprises an actuator plate movable within a slot in one wall of the passage, the actuator plate and the slot oriented generally transverse to the passage. The actuator plate has a first position in which the valve is open, permitting the transfer of a substrate through the passage. The actuator plate also has a second position in which the valve is closed, and in which the actuator plate fluidly seals the passage such that fluid cannot flow through the passage across the actuator plate. A protective cover is configured to prevent debris within the passage (e.g., broken wafers, shards, particulate contaminants, etc.) from flowing into the slot when the actuator plate occupies its second position.

Abstract: A substrate fabrication system is provided which includes a buffer station located inline between a front docking port and a loadlock chamber, the buffer station being operatively joined with a front handling chamber. Preferred embodiments employ a buffer station having a rack with reduced pitch, or relative spacing between shelves. Additional embodiments provide variable pitch end effectors as part of the disclosed fabrication system. Methods of fabricating wafers by quickly transferring them to purgeable buffer stations upon wafers arriving at a docking port are also provided.

Abstract: Manually operated wafer handlers are provided for handling and transporting semiconductor wafers. The wafer handlers contact the wafers only at the outer edges of the wafers, thereby preventing damage to the interior surfaces of the wafers on which integrated circuits are formed.