Abstract: An interconnect structure includes an insulative web having a first surface and a second surface; a logic device secured to the second surface of the insulative web; a frame panel assembly including a frame base having a first surface and a second surface, a first frame insulative layer disposed between the frame base first surface and the insulative web second surface, an aperture extending through the frame base and first frame insulative layer, wherein at least a portion of the logic device is disposed within the aperture, and a first frame connector disposed between a first electrically conductive layer located on the frame base first surface, and a second electrically conductive layer located on a surface of the first frame insulative layer; a device connector disposed between an I/O contact on a surface of the logic device and a third electrical conductor located on a surface of the insulative web; and an insulative layer connector that is disposed between the third electrical conductor located on a sur

Abstract: A power semiconductor module includes: an interconnect layer including an electrical conductor patterned on a dielectric layer, the electrical conductor including a power coupling portion having a thickness sufficient to carry power currents and a control coupling portion having a thickness thinner than that of the power coupling portion; and a semiconductor power device physically coupled to the interconnect layer and electrically coupled to the power coupling portion of the electrical conductor.

Abstract: An electronic component includes a base insulative layer having a first surface and a second surface; at least one electronic device having a first surface and a second surface, wherein the electronic device is secured to the base insulative layer; at least one I/O contact located on the first surface of the electronic device; and a frame panel defining an aperture, wherein the electronic device is disposed within the aperture, and the frame panel is a multi-functional structure having a first region comprising a first material, wherein a surface of the first region secures to the base insulative layer; and a second region comprising a second material, wherein the first material and the second material differ from each other and have differing adhesability to the base insulative layer.

Abstract: A power semiconductor module includes: an interconnect layer including an electrical conductor patterned on a dielectric layer, the electrical conductor including a power coupling portion having a thickness sufficient to carry power currents and a control coupling portion having a thickness thinner than that of the power coupling portion; and a semiconductor power device physically coupled to the interconnect layer and electrically coupled to the power coupling portion of the electrical conductor.

Abstract: An interconnect structure includes an insulative web having a first surface and a second surface; a logic device secured to the second surface of the insulative web; a frame panel assembly including a frame base having a first surface and a second surface, a first frame insulative layer disposed between the frame base first surface and the insulative web second surface, an aperture extending through the frame base and first frame insulative layer, wherein at least a portion of the logic device is disposed within the aperture, and a first frame connector disposed between a first electrically conductive layer located on the frame base first surface, and a second electrically conductive layer located on a surface of the first frame insulative layer; a device connector disposed between an I/O contact on a surface of the logic device and a third electrical conductor located on a surface of the insulative web; and an insulative layer connector that is disposed between the third electrical conductor located on a sur

Abstract: A power semiconductor module includes: an interconnect layer including an electrical conductor patterned on a dielectric layer, the electrical conductor including a power coupling portion having a thickness sufficient to carry power currents and a control coupling portion having a thickness thinner than that of the power coupling portion; and a semiconductor power device physically coupled to the interconnect layer and electrically coupled to the power coupling portion of the electrical conductor.

Abstract: An apparatus and method, the apparatus includes an electronic chip package including an electronic chip having a first contact pad and a second contact pad thereon and being free of an intervening contact pad therebetween, a first dielectric layer coupled to the electronic chip over the first and second contact pads, and a second dielectric layer coupled to the first dielectric layer such that a dielectric layer boundary is formed therebetween. The first dielectric layer has a first contact pad via formed therethrough at a first location corresponding to the first contact pad and extending down thereto. The second dielectric layer has a second contact pad via formed therethrough at a second location corresponding to the second contact pad and extending down thereto such that a second contact pad multi-layer via is formed through the first and second dielectric layers at the second location corresponding to the second contact pad.

Abstract: An apparatus and method, the apparatus includes an electronic chip package including an electronic chip having a first and a second contact pad formed thereon, a first dielectric layer coupled to the electronic chip, a second dielectric layer coupled to the first dielectric layer such that a dielectric boundary lies therebetween, a first and a second cover pad positioned along the dielectric boundary, a metal interconnect formed along a first multi-layer via and coupled to the first cover pad and contact pad, and a metal interconnect formed along a second multi-layer via and coupled to the second cover pad and contact pad. The first multi-layer via extends through the second dielectric layer, the first cover pad, and the first dielectric layer to the first contact pad. The second multi-layer via extends through the second dielectric layer, the second cover pad, and the first dielectric layer to the second contact pad.

Abstract: An apparatus and method, the apparatus includes a substrate configured to support a plurality of dielectric layers, a device coupling area positioned in the substrate, and a plurality of gas exit apertures formed through the substrate. The plurality of gas exit apertures is configured to provide venting of at least one of moisture and outgassed material and the device coupling area is configured to receive an electronic device coupleable to the plurality of dielectric layers.

Abstract: A semiconductor chip packaging structure is fabricated by using a dielectric film with two surfaces, and a power semiconductor chip with an active surface having contact pads. An adhesive layer is used to connect the first surface of the dielectric film and the active surface of the power semiconductor chip. A patterned electrically conductive layer is formed adjacent to the second surface of the film, extending through holes in the film to the contact pads.

Abstract: An apparatus and method, the apparatus includes an electronic chip package including an electronic chip having a first and a second contact pad formed thereon, a first dielectric layer coupled to the electronic chip, a second dielectric layer coupled to the first dielectric layer such that a dielectric boundary lies therebetween, a first and a second cover pad positioned along the dielectric boundary, a metal interconnect formed along a first multi-layer via and coupled to the first cover pad and contact pad, and a metal interconnect formed along a second multi-layer via and coupled to the second cover pad and contact pad. The first multi-layer via extends through the second dielectric layer, the first cover pad, and the first dielectric layer to the first contact pad. The second multi-layer via extends through the second dielectric layer, the second cover pad, and the first dielectric layer to the second contact pad.

Abstract: An apparatus and method, the apparatus includes a substrate configured to support a plurality of dielectric layers, a device coupling area positioned in the substrate, and a plurality of gas exit apertures formed through the substrate. The plurality of gas exit apertures is configured to provide venting of at least one of moisture and outgassed material and the device coupling area is configured to receive an electronic device coupleable to the plurality of dielectric layers.

Abstract: An apparatus and method, the apparatus includes an electronic chip package including an electronic chip having a first contact pad and a second contact pad thereon and being free of an intervening contact pad therebetween, a first dielectric layer coupled to the electronic chip over the first and second contact pads, and a second dielectric layer coupled to the first dielectric layer such that a dielectric layer boundary is formed therebetween. The first dielectric layer has a first contact pad via formed therethrough at a first location corresponding to the first contact pad and extending down thereto. The second dielectric layer has a second contact pad via formed therethrough at a second location corresponding to the second contact pad and extending down thereto such that a second contact pad multi-layer via is formed through the first and second dielectric layers at the second location corresponding to the second contact pad.

Abstract: An electronic component includes a base insulative layer having a first surface and a second surface; at least one electronic device having a first surface and a second surface, wherein the electronic device is secured to the base insulative layer; at least one I/O contact located on the first surface of the electronic device; and a frame panel defining an aperture, wherein the electronic device is disposed within the aperture, and the frame panel is a multi-functional structure having a first region comprising a first material, wherein a surface of the first region secures to the base insulative layer; and a second region comprising a second material, wherein the first material and the second material differ from each other and have differing adhesability to the base insulative layer.

Abstract: An assembly is provided and includes at least one solar cell comprising a photovoltaic element having an upper surface for receiving and absorbing radiation, a lower surface for coupling to an article, a first end and a second end. The solar cell further includes at least one magnet attached to the first end of the photovoltaic element. The assembly further includes an article comprising a substrate, and a magnetic film disposed on the substrate and defining at least one receptor site. Each solar cell is disposed at a respective receptor site.

Abstract: Thermal interface compositions contain both non-electrically conductive micron-sized fillers and electrically conductive nanoparticles blended with a polymer matrix. Such compositions increase the bulk thermal conductivity of the polymer composites as well as decrease thermal interfacial resistances that exist between thermal interface materials and the corresponding mating surfaces. Such compositions are electrically non-conductive. Formulations containing nanoparticles also show less phase separation of micron-sized particles than formulations without nanoparticles.

Abstract: An interconnect structure includes an insulative web having a first surface and a second surface; a logic device secured to the second surface of the insulative web; a frame panel assembly including a frame base having a first surface and a second surface, a first frame insulative layer disposed between the frame base first surface and the insulative web second surface, an aperture extending through the frame base and first frame insulative layer, wherein at least a portion of the logic device is disposed within the aperture, and a first frame connector disposed between a first electrically conductive layer located on the frame base first surface, and a second electrically conductive layer located on a surface of the first frame insulative layer; a device connector disposed between an I/O contact on a surface of the logic device and a third electrical conductor located on a surface of the insulative web; and an insulative layer connector that is disposed between the third electrical conductor located on a sur

Abstract: An electronic component includes a base insulative layer having a first surface and a second surface; an electronic device having a first surface and a second surface; at least one I/O contact located on the first surface of the electronic device; an adhesive layer disposed between the first surface of the electronic device and the second surface of the base insulative layer; a first metal layer disposed on the I/O contact; and a removable layer disposed between the first surface of the electronic device and the second surface of the base insulative layer, and located adjacent to the first metal layer. The base insulative layer secures to the electronic device through the first metal layer and removable layer, wherein the first metal layer and removable layer are capable of releasing the base insulative layer from the electronic device when the first metal layer and removable layer are exposed to a temperature higher than their softening points or melting points.

Abstract: An electronic component includes a base insulative layer having a first surface and a second surface; an electronic device having a first surface and a second surface, and the electronic device being secured to the base insulative layer; an adhesive layer disposed between the first surface of the electronic device and the second surface of the base insulative layer; and a removable layer disposed between the first surface of the electronic device and the second surface of the base insulative layer. The base insulative layer secures to the electronic device through the removable layer. The removable layer releases the base insulative layer from the electronic device at a sufficiently low temperature.

Abstract: A method is provided for making an interconnect structure. The method includes applying a removable layer to an electronic device or to a base insulative layer; applying an adhesive layer to the electronic device or to the base insulative layer; and securing the electronic device to the base insulative layer using the adhesive layer.