Abstract: An acoustic wave device configured to generate a surface acoustic wave having a wavelength L is disclosed. The acoustic wave device can include a substrate, a piezoelectric layer that includes lithium niobate, an interdigital transducer electrode, an overcoat dielectric layer, and/or a raised frame structure. The piezoelectric layer is disposed at least partially between the substrate and the interdigital transducer electrode. The overcoat dielectric layer is positioned over the interdigital transducer electrode. The raised frame structure is positioned over the overcoat dielectric layer. The raised frame structure includes a material of the overcoat dielectric layer. The raised frame structure is positioned in an edge region within 0.25 L and 0.45 L from an edge of an active region where the surface acoustic wave is generated. The acoustic wave device can include a trap-rich layer over the substrate and an intervening dielectric layer over the trap-rich layer.

Abstract: An acoustic wave device configured to generate a surface acoustic wave having a wavelength L is disclosed. The acoustic wave device can include a substrate, a piezoelectric layer that includes lithium niobate, an interdigital transducer electrode, an overcoat dielectric layer, and/or a raised frame structure. The piezoelectric layer can have a trench in an edge region within 0.25L and 0.45L from an edge of an active region where the surface acoustic wave is generated. The piezoelectric layer is disposed at least partially between the substrate and the interdigital transducer electrode. The overcoat dielectric layer is positioned over the interdigital transducer electrode. The raised frame structure is positioned over the overcoat dielectric layer. The raised frame structure is positioned in an edge region of the active region. The acoustic wave device can include a trap-rich layer over the substrate and an intervening dielectric layer over the trap-rich layer.

Abstract: Multi-mode surface acoustic wave filters are disclosed. A multi-mode surface acoustic wave filter can include a plurality of interdigital transducer electrodes that are longitudinally coupled to each other and stepped acoustic reflectors on opposing sides of the plurality of interdigital transducer electrodes. The acoustic reflectors include acoustic reflector fingers with stepped lengths.

Abstract: An acoustic wave resonator is disclosed. The acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode positioned over the piezoelectric layer, a temperature compensation layer positioned over the interdigital transducer electrode, and a velocity reduction cover that extends over at least a portion of a central region of the interdigital transducer electrode and over at least a portion of the temperature compensation layer. The velocity reduction cover is arranged to cause a velocity of an acoustic wave generated by the acoustic wave resonator to be reduced.

Abstract: A die includes at least two surface acoustic wave resonators having different resonant frequencies. A first of the at least two surface acoustic wave resonators includes first interdigital transducer electrodes having a first duty factor and disposed on a multilayer piezoelectric substrate. The multilayer piezoelectric substrate a layer of piezoelectric material having a lower surface bonded to an upper surface of a layer of a second material different from the piezoelectric material. A second of the at least two surface acoustic wave resonators includes second interdigital transducer electrodes having a second duty factor different from the first duty factor and disposed on the multilayer piezoelectric substrate to improve band balance of a device formed from the at least two surface acoustic wave resonators.

Abstract: A packaged acoustic wave filter component can include an acoustic wave device including a first piezoelectric layer and an interdigital transducer electrode on the first piezoelectric layer. A support layer may be included over the acoustic wave device, and the packaged hybrid filter component can also include a bulk acoustic wave resonator over the support layer. A cap layer may extend over and encapsulate the bulk acoustic wave resonator. One or more external vias may extend through the support layer and the underlying layers of the acoustic wave device to provide electrical communication with the packaged bulk acoustic wave generator.

Abstract: An acoustic wave filter component can include a surface acoustic wave device including a first piezoelectric layer, an interdigital transducer electrode on the first piezoelectric layer, and an additional layer, such as a temperature compensation layer, over the interdigital transducer electrode. The acoustic wave filter component can also include a bulk acoustic wave resonator supported by the additional layer. The additional layer may be a layer on which a surface acoustic wave of the surface acoustic wave device will propagate. The bulk acoustic wave resonator may include an air cavity, where a shape of the air cavity is defined in part by the additional layer.

Abstract: An acoustic wave device includes a piezoelectric substrate, interdigital transducer electrodes including a predetermined number of electrode fingers disposed on an upper surface of the substrate, and a dielectric material layer having a first portion and a second portion. The first portion is disposed on the upper surface of the substrate and between the interdigital transducer electrode fingers. The second portion is disposed above the interdigital transducer electrode fingers. The acoustic wave device further includes at least one thermally conductive bridge disposed within the dielectric material layer and contacting upper surfaces of at least two adjacent interdigital transducer electrode fingers to dissipate heat therefrom.

Abstract: A surface acoustic wave filter package includes a cavity formed in or above a substrate and one or more surface acoustic wave filters formed on the substrate. The surface acoustic wave filter package includes a cavity roof including a filler material and having a low coefficient of thermal expansion.

Abstract: Aspects of this disclosure relate to a surface acoustic wave filter with an acoustic velocity adjustment structure. The surface acoustic wave filter can include a first interdigital transducer electrode disposed on a piezoelectric layer, an acoustic reflector disposed on the piezoelectric layer, and a second interdigital transducer electrode disposed on the piezoelectric layer. The second interdigital transducer electrode is longitudinally coupled to the first interdigital transducer electrode and positioned between the first interdigital transducer electrode and the acoustic reflector. The acoustic velocity adjustment structure can be positioned over at least a gap between the first interdigital transducer electrode and the second interdigital transducer electrode.

Abstract: Aspects of this disclosure relate to a surface acoustic wave device that includes a first reflector over a piezoelectric layer, a second reflector over the piezoelectric layer, and an interdigital transducer electrode structure over the piezoelectric layer and positioned between the first reflector and the second reflector. The surface acoustic wave device includes a velocity adjustment layer arranged to adjust acoustic velocity in a region of the surface acoustic wave device. The velocity adjustment layer can be a high speed layer or a low speed layer.

Abstract: A radio frequency acoustic filter includes a plurality of resonators arranged to filter a signal. At least one resonator of the plurality of resonators includes a support substrate, a functional layer, and a piezoelectric layer. Both the piezoelectric layer and the functional layer are supported by the support substrate. An interdigital transducer structure is at least partially formed in the piezoelectric layer.

Abstract: Aspects of this disclosure relate to an acoustic wave device that includes high velocity layers on opposing sides of a piezoelectric layer. A temperature compensation layer can be positioned between one of the high velocity layers and the piezoelectric layer. The acoustic wave device can be arranged to generate a boundary acoustic wave having a higher velocity than a respective acoustic velocity of each of the high velocity layers.

Abstract: A surface acoustic wave filter package comprising a tapered interdigital transducer structure.

Abstract: A multi-layer piezoelectric substrate silicon package comprises a bottom filter including a cap wafer of the bottom filter, and a device wafer of the bottom filter, the cap wafer of the bottom filter and the device wafer of the bottom filter each having a first through silicon via configured to provide an electrical path from a first bottom terminal of the device wafer of the bottom filter to a first top terminal of the cap wafer of the bottom filter.

Abstract: Aspects of this disclosure relate to a surface acoustic wave device with a vertical stack over a piezoelectric layer. The vertical stack can include a first acoustic reflector disposed on the piezoelectric layer, a second acoustic reflector disposed on the piezoelectric layer, and an interdigital transducer electrode disposed on the piezoelectric layer and positioned between the first acoustic reflector and the second acoustic reflector. The interdigital transducer electrode has a first side that is closer to the first acoustic reflector and a second side that is closer to the second acoustic reflector. A vertical arrangement of the vertical stack can be configured such that an acoustic wave propagation velocity of a first region between the first side and a first reflector is faster than an acoustic wave propagation velocity of a second region between the first side and the second side.

Abstract: An acoustic wave device is disclosed. The acoustic wave device includes a support layer, a ceramic layer positioned over the support layer, a piezoelectric layer positioned over the ceramic layer, and an interdigital transducer electrode positioned over the piezoelectric layer. The support layer has a higher thermal conductivity than the ceramic layer. The ceramic layer can be a polycrystalline spinel layer. The acoustic wave device can be a surface acoustic wave device configured to generate a surface acoustic wave.

Abstract: Aspects of this disclosure relate to a surface acoustic wave resonator. The surface acoustic wave resonator includes a piezoelectric substrate, interdigital transducer electrodes disposed on an upper surface of the piezoelectric substrate, a dielectric temperature compensation layer disposed on the piezoelectric substrate to cover the interdigital transducer electrodes, and a dielectric passivation layer over the temperature compensation layer. The passivation layer may include an oxide layer configured to have a sound velocity greater than that of the temperature compensation layer to suppress a transverse signal transmission.

Abstract: A packaged acoustic wave component comprises a substrate having a trap-rich layer arranged at a surface of the substrate, a functional layer disposed over the surface of the substrate such as to cover that surface, a piezoelectric layer disposed over the functional layer and covering the functional layer with the exception of a peripheral portion of the functional layer, a first metal layer comprising an electrode structure disposed over the piezoelectric structure, and a second metal layer disposed partially in contact with the first metal layer and partially in contact with the peripheral portion of the functional layer.

Abstract: Aspects of this disclosure relate to an acoustic wave resonator with hyperbolic mode suppression. The acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode, a temperature compensation layer, and a mass loading strip. The mass loading strip can be a conductive strip. The mass loading strip can overlap edge portions of fingers of the interdigital transducer electrode. A layer of the mass loading strip can have a density that is at least as high as a density of a material of the interdigital transducer electrode. The material of the interdigital transducer can impact acoustic properties of the acoustic wave resonator.