Abstract: A stacked acoustic wave device structure can include at least one surface acoustic wave device that supports a bulk acoustic wave resonator. The surface acoustic wave device includes a first piezoelectric layer with an interdigital transducer electrode on the first piezoelectric layer that generate a surface acoustic wave. In addition, a layer is located above the surface acoustic wave device along which the surface wave propagates. The bulk acoustic wave resonator is supported by the layer, the bulk acoustic wave resonator including an air cavity in contact with the layer, and the bulk acoustic wave resonator further includes a second piezoelectric layer above the air cavity and electrodes on opposing sides of the second piezoelectric layer.

Abstract: An acoustic wave device, a method of manufacture of the same, and a radio frequency filter including the same. The acoustic wave device comprises a multilayer piezoelectric substrate (MPS) including a layer of piezoelectric material having a lower surface disposed on an upper surface of a layer of a dielectric material having a lower surface disposed on an upper surface of a carrier substrate. An interdigital transducer (IDT) is disposed on the multilayer piezoelectric substrate and includes an active region configured to generate an acoustic wave. First and second high impedance portions are included within the multilayer piezoelectric substrate, the first and second high impedance portions each positioned outside the active region of the interdigital transducer and extending in the direction of propagation of the acoustic wave to be generated by the interdigital transducer. The first and second high impedance portions reduce side leakage and suppress transverse modes.

Abstract: Aspects of this disclosure relate to an acoustic wave device having an overtone mode as a main mode. The acoustic wave device is sufficiently asymmetric on opposing sides of a piezoelectric layer over an acoustic reflector such that the main mode of the acoustic wave device is the overtone mode.

Abstract: A delay line for radio frequency circuits comprises a piezoelectric substrate, a transmission single phase unidirectional transducer (SPUDT) disposed on the piezoelectric substrate, and a receive SPUDT disposed on the piezoelectric substrate and separated from the transmission SPUDT in a direction of transmission of a main acoustic wave mode utilized by the transmission SPUDT.

Abstract: An acoustic wave device comprises a substrate including a piezoelectric material, interdigital transducer (IDT) electrodes disposed on a surface of the substrate, a first dielectric film having a lower surface disposed on the IDT electrodes and the surface of the substrate, first strips formed of a first material having a density greater than a density of the first dielectric film disposed within the first dielectric film over tips of the interdigitated electrode fingers in the edge regions of the IDT electrodes, and second strips formed of a second material having a density greater than the density of the first dielectric film disposed within the first dielectric film in the gap regions of the IDT electrodes, laterally spaced from the first strips in a direction perpendicular to a direction of propagation of a main acoustic wave through the acoustic wave device, and extending only partially over the gap regions.

Abstract: Aspects of this disclosure relate to bulk acoustic wave devices that have a raised frame structure, and filters that utilize the bulk acoustic wave devices. The raised frame structure can include a first raised frame layer that has a relatively low acoustic impedance. The raised frame structure can include a second raised frame layer that has a relatively high acoustic impedance. The first raised frame layer can extend inward further than the second raised frame layer. A width of the first raised frame layer that overlaps the first and second electrodes is between about 1.5 times to about 4 times larger than the combined thickness of the first electrode, the piezoelectric layer, and the second electrode.

Abstract: An acoustic wave device is disclosed. The acoustic wave device can include a piezoelectric layer positioned over a substrate. The acoustic wave device can also include an interdigital transducer electrode positioned over the piezoelectric layer. The acoustic wave device can also include a grounding structure positioned over the piezoelectric layer. The acoustic wave device can also include a conductive layer positioned under the substrate such that the substrate is positioned between the conductive layer and the grounding structure. The acoustic wave device can further include an electrical pathway that electrically connects the conductive layer to the grounding structure.

Abstract: Aspects of this disclosure relate to bulk acoustic wave devices that have a raised frame structure, and filters that utilize the bulk acoustic wave devices. The raised frame structure can include a first raised frame layer that has a relatively low acoustic impedance. The raised frame structure can include a second raised frame layer that has a relatively high acoustic impedance. The first raised frame layer can extend inward further than the second raised frame layer. A width of the first raised frame layer that overlaps the first and second electrodes is between about 1.5 times to about 4 times larger than the combined thickness of the first electrode, the piezoelectric layer, and the second electrode.

Abstract: Aspects of this disclosure relate to an acoustic wave resonator with a patterned conductive layer. The acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode over the piezoelectric layer, and a temperature compensation layer over the interdigital transducer electrode. The interdigital transducer electrode can include a bus bar and fingers extending from the bus bar. The fingers can each include an edge portion and a body portion. The patterned conductive layer can overlap the edge portions of the fingers. The patterned conductive layer can conductive portions that are spaced apart from each other. A portion of the temperature compensation layer can be positioned between the patterned conductive layer and the interdigital transducer electrode.

Abstract: Surface acoustic wave resonators are disclosed. In certain embodiments, a surface acoustic wave resonator can include a high impedance layer, a piezoelectric layer over the high impedance layer, an interdigital transducer electrode over the piezoelectric layer, and a low impedance layer between the high impedance layer and the piezoelectric layer. An acoustic impedance of the high impedance layer is greater than an acoustic impedance of the piezoelectric layer. An acoustic impedance of the low impedance layer is lower than the acoustic impedance of the high impedance layer. The piezoelectric layer can have a cut angle in a range from 115° to 135°. The surface acoustic wave resonator is configured to generate a Rayleigh mode surface acoustic wave having a wavelength of ?.

Abstract: A surface acoustic wave device is disclosed. The surface acoustic wave device can include a support substrate structure, a first piezoelectric layer over the support substrate structure, a second piezoelectric layer over the first piezoelectric layer, a first acoustic wave element in electrical communication with the first piezoelectric layer, and a second acoustic wave element in electrical communication with the second piezoelectric layer.

Abstract: A surface acoustic wave device is disclosed. The surface acoustic wave device can include a support substrate, a piezoelectric structure that includes a first region having a first thickness, a second region having a second thickness different from the first thickness, and a third region sloped between the first region and the second region, a first surface acoustic wave element that is positioned in the first region, and a second surface acoustic wave element that is positioned in the second region.

Abstract: A surface acoustic wave device is disclosed. The surface acoustic wave device can include a support substrate structure, a first piezoelectric layer over the support substrate structure, and a second piezoelectric layer over the first piezoelectric layer. The second piezoelectric layer has a first region with a first thickness and a second region with a second thickness different from the first thickness. The surface acoustic wave device can include a first acoustic wave element that is positioned in the first region, and a second acoustic wave element that is positioned in the second region.

Abstract: A surface acoustic wave device is disclosed. The surface acoustic wave device can include a support substrate structure, a first piezoelectric layer over the support substrate structure, a second piezoelectric layer over the first piezoelectric layer, and an interdigital transducer electrode in electrical communication with the second piezoelectric layer.

Abstract: An acoustic wave element is disclosed. The acoustic wave element can include a piezoelectric layer that includes aluminum nitride. The acoustic wave element can also include a diamond like carbon layer. The acoustic wave element can further include an interdigital transducer electrode that is positioned on the piezoelectric layer. The piezoelectric layer is positioned between the interdigital transducer electrode and the diamond like carbon layer. The acoustic wave element is configured to generate a Lamb wave having a wavelength of ?.

Abstract: Aspects and embodiments disclosed herein include a packaged acoustic wave component comprising a base layer, an acoustic wave filter disposed on an upper side of the base layer, a cap layer mounted to the upper side of the base layer such that a bottom side of the cap layer faces the upper side of the base layer, and an electrical shield layer disposed on the bottom side of the cap layer such that the electrical shield layer and the acoustic wave filter are positioned between the base layer and the cap layer.

Abstract: A packaged acoustic wave component is disclosed. The packaged acoustic wave component can include a wafer level packaging structure having a shield structure base, a multi-layer piezoelectric substrate including a piezoelectric layer and a support substrate, and an interdigital transducer electrode in electrical communication with the piezoelectric layer. A difference between a coefficient of thermal expansion of the shield structure base and a coefficient of thermal expansion of the support substrate is 13 ppm/deg or less.

Abstract: A packaged multi-layer piezoelectric substrate surface acoustic wave device is disclosed. The packaged surface acoustic wave device can include a multi-layer piezoelectric substrate including a piezoelectric layer and a quartz substrate, an interdigital transducer electrode in electrical communication with the piezoelectric layer, and a packaging structure having a coefficient of thermal expansion greater than 0 ppm/° C. and equal to or less than 35 ppm/° C. The packaging structure is coupled to the multi-layer piezoelectric substrate. The interdigital transducer electrode is positioned between the quartz substrate and the packaging structure.

Abstract: An acoustic wave resonator is disclosed. The acoustic wave resonator includes a multi-layer piezoelectric substrate including a base layer, an intermediate layer, and a piezoelectric layer with lithium niobate (LiNbO3) having a cut angle ranging from 20 to 40 degrees. The acoustic wave resonator includes interdigital transducer electrodes that are in electrical communication with the piezoelectric layer.

Abstract: An acoustic wave filter component can include an acoustic wave device including a multi-layer piezoelectric substrate. The multi-layer piezoelectric substrate can include at least a support substrate and a piezoelectric layer. The acoustic wave device can include an interdigital transducer electrode on the piezoelectric layer. An additional layer can be located over the interdigital transducer electrode. The acoustic wave filter component can also include a bulk acoustic wave resonator supported by the additional layer. The acoustic wave device can be a boundary wave resonator, and one or more boundary wave resonators may be provided in a stacked arrangement, with the bulk acoustic wave resonator in the top layer of the stacked arrangement. The acoustic wave device can also be a temperature-compensated surface acoustic wave device.