Patents by Inventor Rei Goto

Rei Goto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12206387
    Abstract: Surface acoustic wave resonators are disclosed. In certain embodiments, a surface acoustic wave resonator can include a high impedance layer, a piezoelectric layer over the high impedance layer, an interdigital transducer electrode over the piezoelectric layer, and a low impedance layer between the high impedance layer and the piezoelectric layer. An acoustic impedance of the high impedance layer is greater than an acoustic impedance of the piezoelectric layer. An acoustic impedance of the low impedance layer is lower than the acoustic impedance of the high impedance layer. The piezoelectric layer can have a cut angle in a range from 115° to 135°. The surface acoustic wave resonator is configured to generate a Rayleigh mode surface acoustic wave having a wavelength of ?.
    Type: Grant
    Filed: April 28, 2023
    Date of Patent: January 21, 2025
    Assignee: Skyworks Solutions, Inc.
    Inventors: Rei Goto, Keiichi Maki
  • Publication number: 20250007488
    Abstract: A surface acoustic wave device is disclosed. The surface acoustic wave device can include a support substrate structure, a first piezoelectric layer over the support substrate structure, and a second piezoelectric layer over the first piezoelectric layer. The second piezoelectric layer has a first region with a first thickness and a second region with a second thickness different from the first thickness. The surface acoustic wave device can include a first acoustic wave element that is positioned in the first region, and a second acoustic wave element that is positioned in the second region.
    Type: Application
    Filed: June 26, 2024
    Publication date: January 2, 2025
    Inventors: Rei Goto, Yuya Hiramatsu
  • Publication number: 20250007489
    Abstract: A surface acoustic wave device is disclosed. The surface acoustic wave device can include a support substrate structure, a first piezoelectric layer over the support substrate structure, a second piezoelectric layer over the first piezoelectric layer, a first acoustic wave element in electrical communication with the first piezoelectric layer, and a second acoustic wave element in electrical communication with the second piezoelectric layer.
    Type: Application
    Filed: June 26, 2024
    Publication date: January 2, 2025
    Inventors: Rei Goto, Yuya Hiramatsu
  • Publication number: 20250007487
    Abstract: A surface acoustic wave device is disclosed. The surface acoustic wave device can include a support substrate, a piezoelectric structure that includes a first region having a first thickness, a second region having a second thickness different from the first thickness, and a third region sloped between the first region and the second region, a first surface acoustic wave element that is positioned in the first region, and a second surface acoustic wave element that is positioned in the second region.
    Type: Application
    Filed: June 26, 2024
    Publication date: January 2, 2025
    Inventors: Rei Goto, Yuya Hiramatsu
  • Publication number: 20250007490
    Abstract: A surface acoustic wave device is disclosed. The surface acoustic wave device can include a support substrate structure, a first piezoelectric layer over the support substrate structure, a second piezoelectric layer over the first piezoelectric layer, and an interdigital transducer electrode in electrical communication with the second piezoelectric layer.
    Type: Application
    Filed: June 26, 2024
    Publication date: January 2, 2025
    Inventor: Rei Goto
  • Patent number: 12166463
    Abstract: An acoustic wave element is disclosed. The acoustic wave element can include a piezoelectric layer that includes aluminum nitride. The acoustic wave element can also include a diamond like carbon layer. The acoustic wave element can further include an interdigital transducer electrode that is positioned on the piezoelectric layer. The piezoelectric layer is positioned between the interdigital transducer electrode and the diamond like carbon layer. The acoustic wave element is configured to generate a Lamb wave having a wavelength of ?.
    Type: Grant
    Filed: December 22, 2020
    Date of Patent: December 10, 2024
    Assignee: Skyworks Solutions, Inc.
    Inventors: Rei Goto, Siarhei Dmitrievich Barsukou
  • Publication number: 20240405750
    Abstract: Aspects and embodiments disclosed herein include a packaged acoustic wave component comprising a base layer, an acoustic wave filter disposed on an upper side of the base layer, a cap layer mounted to the upper side of the base layer such that a bottom side of the cap layer faces the upper side of the base layer, and an electrical shield layer disposed on the bottom side of the cap layer such that the electrical shield layer and the acoustic wave filter are positioned between the base layer and the cap layer.
    Type: Application
    Filed: May 15, 2024
    Publication date: December 5, 2024
    Inventors: Rei Goto, Hironori Fukuhara, Atsushi Takano
  • Publication number: 20240396518
    Abstract: A packaged multi-layer piezoelectric substrate surface acoustic wave device is disclosed. The packaged surface acoustic wave device can include a multi-layer piezoelectric substrate including a piezoelectric layer and a quartz substrate, an interdigital transducer electrode in electrical communication with the piezoelectric layer, and a packaging structure having a coefficient of thermal expansion greater than 0 ppm/° C. and equal to or less than 35 ppm/° C. The packaging structure is coupled to the multi-layer piezoelectric substrate. The interdigital transducer electrode is positioned between the quartz substrate and the packaging structure.
    Type: Application
    Filed: May 24, 2024
    Publication date: November 28, 2024
    Inventors: Rei Goto, Hironori Fukuhara
  • Publication number: 20240396517
    Abstract: An acoustic wave resonator is disclosed. The acoustic wave resonator includes a multi-layer piezoelectric substrate including a base layer, an intermediate layer, and a piezoelectric layer with lithium niobate (LiNbO3) having a cut angle ranging from 20 to 40 degrees. The acoustic wave resonator includes interdigital transducer electrodes that are in electrical communication with the piezoelectric layer.
    Type: Application
    Filed: May 22, 2024
    Publication date: November 28, 2024
    Inventor: Rei Goto
  • Publication number: 20240396519
    Abstract: A packaged acoustic wave component is disclosed. The packaged acoustic wave component can include a wafer level packaging structure having a shield structure base, a multi-layer piezoelectric substrate including a piezoelectric layer and a support substrate, and an interdigital transducer electrode in electrical communication with the piezoelectric layer. A difference between a coefficient of thermal expansion of the shield structure base and a coefficient of thermal expansion of the support substrate is 13 ppm/deg or less.
    Type: Application
    Filed: May 24, 2024
    Publication date: November 28, 2024
    Inventors: Rei Goto, Hironori Fukuhara
  • Patent number: 12149224
    Abstract: An acoustic wave filter component can include an acoustic wave device including a multi-layer piezoelectric substrate. The multi-layer piezoelectric substrate can include at least a support substrate and a piezoelectric layer. The acoustic wave device can include an interdigital transducer electrode on the piezoelectric layer. An additional layer can be located over the interdigital transducer electrode. The acoustic wave filter component can also include a bulk acoustic wave resonator supported by the additional layer. The acoustic wave device can be a boundary wave resonator, and one or more boundary wave resonators may be provided in a stacked arrangement, with the bulk acoustic wave resonator in the top layer of the stacked arrangement. The acoustic wave device can also be a temperature-compensated surface acoustic wave device.
    Type: Grant
    Filed: November 18, 2020
    Date of Patent: November 19, 2024
    Assignee: Skyworks Solutions, Inc.
    Inventors: Keiichi Maki, Hironori Fukuhara, Rei Goto
  • Patent number: 12143144
    Abstract: Antenna arrays with multiple feeds and varying pitch are disclosed. In certain embodiments, a radio frequency (RF) module includes a module substrate, a semiconductor die attached to the module substrate, and an antenna array attached to the module substrate. The semiconductor die includes a plurality of power amplifiers configured to amplify a corresponding plurality of RF signals to generate a plurality of amplified RF signals. The antenna array is configured to receive the plurality of amplified RF signals from the plurality of power amplifiers, and includes a plurality of antenna elements arranged with a varying pitch. Each of the plurality of antenna elements includes two or more signal feeds.
    Type: Grant
    Filed: March 15, 2022
    Date of Patent: November 12, 2024
    Assignee: Skyworks Solutions, Inc.
    Inventors: Rei Goto, David Scott Whitefield
  • Patent number: 12136908
    Abstract: Aspects of this disclosure relate to a method for making an acoustic wave resonator with hyperbolic mode suppression. The acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode, a temperature compensation layer, and a mass loading strip. The mass loading strip can be a conductive strip. The mass loading strip can overlap edge portions of fingers of the interdigital transducer electrode. A layer of the mass loading strip can have a density that is at least as high as a density of a material of the interdigital transducer electrode. The material of the interdigital transducer can impact acoustic properties of the acoustic wave resonator.
    Type: Grant
    Filed: December 5, 2023
    Date of Patent: November 5, 2024
    Assignee: Skyworks Solutions, Inc.
    Inventors: Yuya Hiramatsu, Rei Goto, Yumi Torazawa
  • Patent number: 12136910
    Abstract: Aspects of this disclosure relate to an acoustic wave resonator with a patterned conductive layer. The acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode over the piezoelectric layer, and a temperature compensation layer over the interdigital transducer electrode. The interdigital transducer electrode can include a bus bar and fingers extending from the bus bar. The fingers can each include an edge portion and a body portion. The patterned conductive layer can overlap the edge portions of the fingers. The patterned conductive layer can conductive portions that are spaced apart from each other. A portion of the temperature compensation layer can be positioned between the patterned conductive layer and the interdigital transducer electrode.
    Type: Grant
    Filed: June 4, 2020
    Date of Patent: November 5, 2024
    Assignee: Skyworks Solutions, Inc.
    Inventor: Rei Goto
  • Publication number: 20240364290
    Abstract: A surface acoustic wave device is disclosed. The surface acoustic wave device can include a single crystal support layer, an intermediate single crystal layer positioned over the single crystal support layer, a lithium based piezoelectric layer positioned over the intermediate single crystal layer, and an interdigital transducer electrode positioned over the lithium based piezoelectric layer, the surface acoustic wave device configured to generate a surface acoustic wave. The single crystal layer can be a quartz layer, such as a z-propagation quartz layer. A thermal conductivity of the single crystal support layer is greater than a thermal conductivity of the intermediate single crystal layer, and the thermal conductivity of the single crystal support layer is greater than a thermal conductivity of the lithium based piezoelectric layer.
    Type: Application
    Filed: May 6, 2024
    Publication date: October 31, 2024
    Inventors: Benjamin Paul Abbott, Rei Goto
  • Publication number: 20240364305
    Abstract: An acoustic wave device has a layer of piezoelectric material and two interdigital transducer electrodes disposed on an upper surface of the layer of piezoelectric material. Each interdigital transducer electrode of the two interdigital transducer electrodes includes a first bus bar, a second bus bar arranged in parallel to the first bus bar and having a smaller width than the first bus bar, and a plurality of electrode fingers extending from the second bus bar towards the respective other interdigital transducer electrode. The electrode fingers of the two interdigital transducer electrodes are interleaved. The second bus bar of each interdigital transducer electrode is connected with the first bus bar of the same interdigital transducer electrode via a plurality of bridges. Each bridge extends collinearly with one of the electrode fingers of the same interdigital transducer electrode. Each bridge has a width smaller than a smallest width of the electrode finger with which it is collinear.
    Type: Application
    Filed: April 5, 2024
    Publication date: October 31, 2024
    Inventor: Rei Goto
  • Publication number: 20240356515
    Abstract: A laterally excited bulk acoustic wave device is disclosed. The laterally excited bulk acoustic wave device can include a support substrate, a solid acoustic mirror on the support substrate, a piezoelectric layer on the solid acoustic mirror, and an interdigital transducer electrode on the piezoelectric layer. The interdigital transducer electrode is arranged to laterally excite a bulk acoustic wave.
    Type: Application
    Filed: May 6, 2024
    Publication date: October 24, 2024
    Inventor: Rei Goto
  • Publication number: 20240356518
    Abstract: Aspects of this disclosure relate to an elastic wave device. The elastic wave device includes a sub-wavelength thick piezoelectric layer, an interdigital transducer electrode on the piezoelectric layer, and a high velocity layer configured to inhibit an elastic wave from leaking from the piezoelectric layer at anti-resonance.
    Type: Application
    Filed: April 22, 2024
    Publication date: October 24, 2024
    Inventors: Rei Goto, Jie Zou, Hiroyuki Nakamura, Chun Sing Lam
  • Publication number: 20240356516
    Abstract: A laterally excited bulk acoustic wave device is disclosed. The laterally excited bulk acoustic wave device can include a first solid acoustic mirror, a second solid acoustic mirror, a piezoelectric layer that is positioned between the first solid acoustic mirror and the second solid acoustic mirror, an interdigital transducer electrode on the piezoelectric layer, and a support substrate arranged to dissipate heat associated with the bulk acoustic wave. The interdigital transducer electrode is arranged to laterally excite a bulk acoustic wave. The first solid acoustic mirror and the second solid acoustic mirror are arranged to confine acoustic energy of the bulk acoustic wave. The first solid acoustic mirror is positioned on the support substrate.
    Type: Application
    Filed: July 2, 2024
    Publication date: October 24, 2024
    Inventors: Joshua James Caron, Rei Goto
  • Publication number: 20240356519
    Abstract: A surface acoustic wave device is disclosed. The surface acoustic wave device can include a ceramic substrate, a piezoelectric layer over the ceramic substrate, and an interdigital transducer electrode over the piezoelectric layer. The ceramic substrate can be a polycrystalline spinel substrate. The surface acoustic wave device can also include a temperature compensating layer over the interdigital transducer electrode.
    Type: Application
    Filed: July 2, 2024
    Publication date: October 24, 2024
    Inventors: Rei Goto, Hironori Fukuhara, Hiroyuki Nakamura, Keiichi Maki