Abstract: Aspects of this disclosure relate to a surface acoustic wave resonator. The surface acoustic wave resonator includes a piezoelectric substrate, interdigital transducer electrodes disposed on an upper surface of the piezoelectric substrate, a dielectric temperature compensation layer disposed on the piezoelectric substrate to cover the interdigital transducer electrodes, and a dielectric passivation layer over the temperature compensation layer. The passivation layer may include an oxide layer configured to have a sound velocity greater than that of the temperature compensation layer to suppress a transverse signal transmission.

Abstract: A packaged acoustic wave component comprises a substrate having a trap-rich layer arranged at a surface of the substrate, a functional layer disposed over the surface of the substrate such as to cover that surface, a piezoelectric layer disposed over the functional layer and covering the functional layer with the exception of a peripheral portion of the functional layer, a first metal layer comprising an electrode structure disposed over the piezoelectric structure, and a second metal layer disposed partially in contact with the first metal layer and partially in contact with the peripheral portion of the functional layer.

Abstract: Aspects of this disclosure relate to an acoustic wave resonator with hyperbolic mode suppression. The acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode, a temperature compensation layer, and a mass loading strip. The mass loading strip can be a conductive strip. The mass loading strip can overlap edge portions of fingers of the interdigital transducer electrode. A layer of the mass loading strip can have a density that is at least as high as a density of a material of the interdigital transducer electrode. The material of the interdigital transducer can impact acoustic properties of the acoustic wave resonator.

Abstract: A packaged acoustic wave component can include a dielectric layer disposed over a substrate, a piezoelectric structure disposed over the dielectric layer, and an electrode structure disposed over the piezoelectric structure. The component can further include a polymer structure including a polymer structure wall portion and a polymer structure roof portion configured to form a cavity over the electrode structure, a metal structure disposed over the polymer structure. A buffer coating can be disposed over the metal structure. The buffer coating can include a polymer material with a filler material.

Abstract: An acoustic wave resonator is disclosed. The acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode positioned over the piezoelectric layer, a temperature compensation layer positioned over the interdigital transducer electrode, and a velocity reduction cover that extends over at least a portion of a central region of the interdigital transducer electrode and over at least a portion of the temperature compensation layer. The velocity reduction cover is arranged to cause a velocity of an acoustic wave generated by the acoustic wave resonator to be reduced.

Abstract: In some embodiments, a surface acoustic wave device can include a piezoelectric substrate and an interdigital transducer electrode embedded in a surface of the piezoelectric substrate to support a high-order mode of a surface acoustic wave having a wavelength ? and a phase velocity greater than 8,000 m/s. Such a high-order mode can include a third-order mode, and the phase velocity can be at least 9,000 m/s. In some embodiments, such a surface acoustic wave device can be implemented in products such as a radio-frequency filter, a radio-frequency module and a wireless device.

Abstract: In some embodiments, a surface acoustic wave device can include a piezoelectric substrate and an interdigital transducer electrode implemented on a surface of the piezoelectric substrate, such that the surface acoustic device supports a surface acoustic wave having a wavelength ? and a phase velocity less than 3,000 m/s with an electromechanical coupling coefficient of at least 9.0. In some embodiments, the phase velocity less than 2,000 m/s, and the surface acoustic wave can include a lowest asymmetry (A0) mode. In some embodiments, such a surface acoustic wave device can be implemented in products such as a radio-frequency filter, a radio-frequency module and a wireless device.

Abstract: Surface acoustic wave resonators are disclosed. In certain embodiments, a surface acoustic wave resonator can include a high impedance layer, a piezoelectric layer over the high impedance layer, an interdigital transducer electrode over the piezoelectric layer, and a low impedance layer between the high impedance layer and the piezoelectric layer. An acoustic impedance of the high impedance layer is greater than an acoustic impedance of the piezoelectric layer. An acoustic impedance of the low impedance layer is lower than the acoustic impedance of the high impedance layer. The piezoelectric layer can have a cut angle in a range from 115° to 135°. The surface acoustic wave resonator is configured to generate a Rayleigh mode surface acoustic wave having a wavelength of ?.

Abstract: A radio frequency multiplexer comprises a piezoelectric substrate, a first surface acoustic wave resonator including interdigital transducer electrodes disposed on the piezoelectric substrate and having a first metal layer formed of a first metal and a second metal layer disposed on the first metal layer and formed of a second metal having a higher density than the first metal, and a second surface acoustic wave resonator including interdigital transducer electrodes disposed on the piezoelectric substrate and having a first metal layer formed of the first metal, but lacking the second metal layer.

Abstract: An acoustic wave device that includes a spinel layer, a piezoelectric layer and an interdigital transducer electrode on the piezoelectric layer is disclosed. The piezoelectric layer is disposed between the interdigital transducer electrode and the spinel layer. The acoustic wave device is configured to generate an acoustic wave having a wavelength of ?. The piezoelectric layer can have a thickness than is less than ?. In some embodiments, the acoustic wave device can include a temperature compensating layer that is disposed between the piezoelectric layer and the spinel layer.

Abstract: An acoustic wave device is disclosed. The acoustic wave device can include a piezoelectric layer positioned over a substrate. The acoustic wave device can also include an interdigital transducer electrode positioned over the piezoelectric layer. The acoustic wave device can also include a grounding structure positioned over the piezoelectric layer. The acoustic wave device can also include a conductive layer positioned under the substrate such that the substrate is positioned between the conductive layer and the grounding structure. The acoustic wave device can further include an electrical pathway that electrically connects the conductive layer to the grounding structure.

Abstract: An acoustic wave device is disclosed. The acoustic wave device can include a substrate, an interdigital transducer electrode disposed on the substrate, and a temperature compensation layer over the interdigital transducer electrode. The IDT electrode includes a lower layer, an upper layer, and a buffer layer disposed between the lower layer and the upper layer. A modulus of elasticity of the buffer layer is less than a modulus of elasticity of the upper layer. The buffer layer is configured to release stress between the lower layer and the upper layer caused due to a difference between a coefficient of thermal expansion of the lower layer and a coefficient of thermal expansion of the upper layer.

Abstract: An acoustic wave device comprising a transmit filter including a plurality of surface acoustic wave resonators. Each surface acoustic wave resonator of the transmit filter including an interdigital transducer electrode comprising a first material. The acoustic wave device further comprising a receive filter including a plurality of surface acoustic wave resonators. At least a proportion of the plurality of surface acoustic wave resonators of the receive filter each including an interdigital transducer electrode comprising a second material. The density of the first material is greater than the density of the second material.

Abstract: Aspects of this disclosure relate to a surface acoustic wave resonator that may include a piezoelectric substrate, interdigital transducer (IDT) electrodes disposed on an upper surface of the piezoelectric substrate, and a dielectric film covering the piezoelectric substrate and the IDT electrode for temperature compensation. The IDT electrodes may include bus bar electrode regions spaced apart from each other in a transverse direction perpendicular to a propagation direction of a surface acoustic wave to be excited, an overlapping region sandwiched between the bus bar regions, and gap regions defined between respective bus bar electrode regions and the overlapping region in the transverse direction. Each of the gap regions may include a dummy electrode in a dummy electrode region extending from the bus bar electrode region in the transverse direction. The dielectric film may include an open region exposing a respective bus bar electrode region and dummy electrode region.

Abstract: An acoustic wave device is disclosed, the acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode over the piezoelectric layer, and a multilayer passivation structure over the interdigital transducer electrode. The multilayer passivation structure has a thickness thinner than a thickness of the interdigital transducer electrode.

Abstract: A multiplexer is disclosed. The multiplexer can include a multilayer piezoelectric substrate surface acoustic wave device that includes at least a portion of a transmission filter. The multiplexer can include a temperature compensated surface acoustic wave device that includes at least a portion of a reception filter. The reception filter is electrically connected to the transmission filter.

Abstract: An acoustic wave device is disclosed. The acoustic wave device can include a first multiplexer that has a first portion and a second portion. The acoustic wave device can include a second multiplexer that has a third portion and a fourth portion. The first portion and the third portion are formed in a first die. The second portion and the fourth portion are formed in a second die. A difference between a velocity of an acoustic wave that is generated by the first die and a velocity of an acoustic wave that is generated by the second die is at least 200 m/s.

Abstract: An acoustic wave device is disclosed. The acoustic wave device can include a first multiplexer that has a first portion and a second portion. The acoustic wave device can include a second multiplexer that has a third portion and a fourth portion. The first portion and the third portion are formed in a first die. The second portion and the fourth portion are formed in a second die that has a different physical structure from the first die.

Abstract: A multilayer piezoelectric substrate acoustic wave device is disclosed. The multilayer piezoelectric substrate acoustic wave device can include a multilayer piezoelectric substrate, an interdigital transducer electrode over the multilayer piezoelectric substrate, and a multilayer passivation structure over the interdigital transducer electrode. The multilayer passivation structure includes a first layer that has a first passivation material and a second layer that has a second passivation material different from the first passivation material.

Abstract: An acoustic wave device is disclosed. the acoustic wave device is configured to generate a wave having a wavelength of L. The acoustic wave device includes a piezoelectric layer a first layer of an interdigital transducer electrode over the piezoelectric layer, and a second layer of the interdigital transducer electrode over the first layer. The first layer has a material with a first mass density of ?. The first mass density of ? is greater than 5000 kg/m3. The first layer has a thickness of t1 less than 0.04 L. The first layer can have the thickness of t1 in a range between 0.0025 L(10220/?) and 0.04 L(10220/?). The second layer has a material with a second mass density that is smaller than the first mass density.