Abstract: According to an embodiment, a photodetection element includes a photoelectric conversion layer having a density increasing from one end side to another end side in a thickness direction and a uniform composition in the thickness direction to convert energy of radiation into charges.

Abstract: According to an embodiment, a producing method of a radiation detection element, includes: forming an organic semiconductor layer by applying an organic semiconductor solution onto a first conductive layer formed on a support substrate; forming a second conductive layer on the organic semiconductor layer; sealing a laminated body of the first conductive layer, the organic semiconductor layer, and the second conductive layer, formed on the support substrate, with a sealing member; and applying heat to the laminated body sealed with the sealing member. In at least one of forming of the organic layer and forming of the second conductive layer, a forming environment of the organic semiconductor layer and the second conductive layer are adjusted such that the solvent content of the organic semiconductor layer is in a predetermined range.

Abstract: According to an embodiment, a detection element includes a first electrode, a second electrode, an organic conversion layer, and a third electrode. The organic conversion layer is provided between the first electrode and the second electrode, and is configured to convert energy of a radiant ray into a charge. The third electrode is provided inside the organic conversion layer. Bias is applied to the third electrode.

Abstract: According to one embodiment, a radiation detector includes a metal member, a capacitor, and a first charge-sensitive amplifier. The metal member includes a first portion and a second portion. The capacitor is electrically connected to the second portion. The first charge-sensitive amplifier is electrically connected to the first portion. The first charge-sensitive amplifier outputs a signal corresponding to ?-rays incident on the metal member.

Abstract: According to an embodiment, a detection element includes a first electrode, a second electrode, an organic conversion layer, and a third electrode. A bias is applied to the first electrode. The organic conversion layer is arranged between the first electrode and the second electrode, and is configured to convert energy of a radiation into an electric charge. The third electrode is arranged in the organic conversion layer.

Abstract: According to one embodiment, a radiation detector includes a metal member, a capacitor, and a first charge-sensitive amplifier. The metal member includes a first portion and a second portion. The capacitor is electrically connected to the second portion. The first charge-sensitive amplifier is electrically connected to the first portion. The first charge-sensitive amplifier outputs a signal corresponding to ?-rays incident on the metal member.

Abstract: According to an embodiment, a photodetector includes a photo detection layer, light conversion members, and a first member. The photo detection layer includes, on a light incident surface, plural pixel regions and a surrounding region. The pixel region holds a photo detection element to detect the light. The surrounding region is a region other than the pixel regions on the light incident surface. The light conversion members are arranged to oppose the pixel regions in the photo detection layer and convert radiation to the light. Each light conversion member includes a bottom surface opposing the pixel region in the photo detection layer, a top surface opposing the bottom surface, and a lateral surface connecting the bottom and top surfaces. The first member is disposed on a portion of the surrounding region on the light incident surface and covers a portion of the lateral surface of the light conversion member.

Abstract: Certain embodiments provide a thermoelectric conversion element includes: a thermoelectric conversion layer configure to contain an organic material formed on a substrate, and the organic material doped a metallic oxide; a first electrode configure to be provided on the thermoelectric conversion layer; and a second electrode configure to be provided on the thermoelectric conversion layer being apart from the first electrode.

Abstract: According to one embodiment, a photoelectric conversion element includes a first conductive layer, a second conductive layer, and an intermediate layer provided between the first conductive layer and the second conductive layer. The intermediate layer includes a first semiconductor region and a second semiconductor region. The first semiconductor region is of an n-type, and the second semiconductor region is of a p-type. The first semiconductor region includes at least one selected from the group consisting of fullerene and a fullerene derivative. The second semiconductor region includes at least one selected from the group consisting of quinacridone and a quinacridone derivative. A ratio of a weight of the second semiconductor region per unit volume to a weight of the first semiconductor region per unit volume in the intermediate layer is greater than 5.

Abstract: According to an embodiment, a radiation detector includes a first scintillator, a second scintillator, and a photoelectric conversion element. The first scintillator converts radiation into light. The second scintillator converts radiation into light and has higher density than the first scintillator. The photoelectric conversion element is provided between the first scintillator and the second scintillator, and includes a photoelectric conversion layer converting light into electric charge.

Abstract: According to one embodiment, a photoelectric conversion element includes a first conductive layer, a second conductive layer, an organic semiconductor layer, and a first region. The first conductive layer includes a first metal. The organic semiconductor layer is provided between the first conductive layer and the second conductive layer. The first region includes the first metal and oxygen and is positioned between the organic semiconductor layer and the first conductive layer.

Abstract: According to an embodiment, a radiation detection device includes one or more processors. The one or more processors are configured to: acquire an output waveform, from a detector configured to output the output waveform according to radiation; and identify a type of radiation incident on the detector, based on a first integrated value of the output waveform in a first integration period and a second integrated value of the output waveform in a second integration period.

Abstract: According to an embodiment, a radiation detector includes a first scintillator, a second scintillator, and a photoelectric conversion element. The first scintillator converts radiation into light. The second scintillator converts radiation into light and has higher density than the first scintillator. The photoelectric conversion element is provided between the first scintillator and the second scintillator, and includes a photoelectric conversion layer converting light into electric charge.

Abstract: According to an embodiment, a photodetector includes a first photoelectric conversion element, a second photoelectric conversion element, and an absorption layer. The first photoelectric conversion element includes a first photoelectric conversion layer for converting energy of radiation into electric charges. The second photoelectric conversion element includes a second photoelectric conversion layer for converting energy of radiation into electric charges. The absorption layer is arranged between the first photoelectric conversion element and the second photoelectric conversion element to absorb radiation having energy equal to or lower than a threshold value.

Abstract: According to one embodiment, a radiation detector includes a scintillator layer, a first conductive layer, a second conductive layer, and an organic layer. The second conductive layer is provided between the scintillator layer and the first conductive layer. The organic layer is provided between the first conductive layer and the second conductive layer. The organic layer includes an organic semiconductor region having a first thickness. The first thickness is 400 nanometers or more.

Abstract: According to an embodiment, a photoelectric conversion element includes a photoelectric conversion layer that converts light to charges. The photoelectric conversion layer contains oligothiophene and fullerene selected from a group including a fullerene and derivatives thereof. A content ratio of the oligothiophene and the fullerene is 500:1 to 5:1 by weight.

Abstract: According to an embodiment, an apparatus includes a reference calculator, a peak calculator, a coefficient calculator, and a calibrator. The reference calculator is configured to calculate, as a first value, a most frequent electrical signal level from a first set of electrical signal levels output from the respective pixels of a detector for radiation. The peak calculator is configured to calculate, as a second value, a peak level of radiation energy of a characteristic X-ray, based on a relation between energy and intensity of radiation obtained from the first set. The coefficient calculator is configured to calculate a coefficient by dividing a difference between the first and second values by the peak level. The calibrator is configured to multiply an electrical signal level of each pixel by the coefficient and add the first value to the multiplication to calibrate a relation between detection output and incident radiation of the detector.

Abstract: A photodetector according to an embodiment includes: a substrate with a first and second faces; pixels disposed to the substrate, each pixel including: light detection cells disposed on the first face, each light detection cell being surrounded by a first opening having a continuous closed curve shape formed on the second face when viewed from a side of the second face; a first wiring line disposed on the first face to connect to each of the light detection cells; first electrodes, each of the first electrodes being disposed in corresponding one of third openings and connected to the second face, the third openings being disposed in a first insulating film and exposing a part of respective regions of the light detection cells in the second face; a second electrode disposed on the second surface and connecting the first electrodes; and a light blocking material filled to the first opening.

Abstract: According to an embodiment, a photodetection element includes a photoelectric conversion layer having a density increasing from one end side to another end side in a thickness direction and a uniform composition in the thickness direction to convert energy of radiation into charges.

Abstract: A photodetector according to an embodiment includes: a substrate with a first and second faces; pixels disposed to the substrate, each pixel including: light detection cells disposed on the first face, each light detection cell being surrounded by a first opening having a continuous closed curve shape formed on the second face when viewed from a side of the second face; a first wiring line disposed on the first face to connect to each of the light detection cells; first electrodes, each of the first electrodes being disposed in corresponding one of third openings and connected to the second face, the third openings being disposed in a first insulating film and exposing a part of respective regions of the light detection cells in the second face; a second electrode disposed on the second surface and connecting the first electrodes; and a light blocking material filled to the first opening.