Abstract: According to an embodiment, a photon detecting element includes one or more avalanche photodiodes and a circuit. The circuit is connected between cathodes of the one or more avalanche photodiodes and an external power source. The circuit is configured in which a first temperature coefficient representing variation of a setting potential with respect to temperature variation when constant-current driving is performed so that electrical potential of the cathodes becomes equal to the setting potential is substantially the same as a second temperature coefficient representing variation of breakdown voltage of the one or more avalanche photodiodes with respect to temperature variation.

Abstract: A detection apparatus according to an embodiment includes first detectors, a first electrode, second detectors and a second electrode. The first detectors detect a photon. The first electrode is electrically connected to each of the first detectors. The second detectors detect a photon. The second electrode is electrically connected to each of the second detectors. The number of first detectors is less than the number of second detectors.

Abstract: According to an embodiment, a photodetector includes a first photoelectric conversion element, a second photoelectric conversion element, and an absorption layer. The first photoelectric conversion element includes a first photoelectric conversion layer for converting energy of radiation into electric charges. The second photoelectric conversion element includes a second photoelectric conversion layer for converting energy of radiation into electric charges. The absorption layer is arranged between the first photoelectric conversion element and the second photoelectric conversion element to absorb radiation having energy equal to or lower than a threshold value.

Abstract: A method of manufacturing a radiation detector according to an embodiment includes: forming a plurality of scintillator array columns, each of the scintillator array columns being formed by preparing a scintillator member that a thickness being smaller than a length and a width, the scintillator member having a first face, a second face, a third face, and a fourth face, and being cut from the third face along the second direction to form at least a groove that penetrates from the first face to the second face but does not reach the fourth face to have an uncut portion near the fourth face; stacking the scintillator array columns in the first direction with a space between each of adjacent two scintillator array columns, and filling a spacer material into the space; inserting a reflector into each space and each groove; and cutting the uncut portion.

Abstract: According to one embodiment, a radiation detector includes a scintillator layer, a first conductive layer, a second conductive layer, and an organic layer. The second conductive layer is provided between the scintillator layer and the first conductive layer. The organic layer is provided between the first conductive layer and the second conductive layer. The organic layer includes an organic semiconductor region having a first thickness. The first thickness is 400 nanometers or more.

Abstract: According to an embodiment, an apparatus includes a first detector, a second detector, and a controller. The first detector is configured to detect first radiation at a first frequency within a first time by at least a first radiation detecting element and a second radiation detecting element that are positioned near to each other, and output a first signal. The second detector is configured to detect second radiation at a second frequency less than the first frequency within a second time by at least the first radiation detecting element and the second radiation detecting element, and output a second signal. The controller is configured to generate a third signal representing a difference between the first signal and the second signal, and calculate energy using the third signal.

Abstract: According to an embodiment, a detection device includes a plurality of first detectors and a plurality of second detectors. The plurality of first detectors are arranged on a two-dimensional plane. Each first detector is configured to detect photons in a photon-counting manner. The plurality of second detectors are arranged on the two-dimensional plane. Each second detector is configured to detect photons in a charge-integrating manner.

Abstract: According to an embodiment, a radiation detection device includes a scintillator layer, a plurality of detectors, a setting unit, an identifier, and a corrector. The scintillator layer is configured to convert radiation into scintillation light. The detectors are arranged along a first surface facing the scintillator layer to detect light. The setting unit is configured to set one of the detectors as a first detector to be corrected. The identifier is configured to identify, out of the detectors, a second detector that detects a synchronization signal synchronizing with a first signal detected by the first detector. The corrector is configured to correct an energy spectrum of light detected by the first detector on the basis of a second signal serving as the synchronization signal in signals detected by the second detector, the first signal, and characteristic X-ray energy of a scintillator raw material constituting the scintillator layer.

Abstract: In one embodiment, a photo detector is provided with a semiconductor layer having a first light receiving surface and a second light receiving surface opposite to the first light receiving surface, and a diffraction grating which is provided on the first light, receiving surface side of the semiconductor layer and has convex portions. The convex portions are arranged in one direction at a predetermined cycle.

Abstract: In one embodiment, a photo detector is provided with a semiconductor layer having a light receiving surface, a first reflective material which is provided on a side opposite to the light receiving surface side of the semiconductor layer and reflects a light incident from the light receiving surface, and a slope portion provided on a side surface of the semiconductor layer.

Abstract: In one embodiment, a photo detector is provided with a semiconductor layer having a projection portion provided at a side opposite to a light receiving surface side, and a reflective material which covers a surface of the projection portion and reflects a light incident from the light receiving surface. In the photo detector, the projection portion layer has a slope portion, and an angle ? of a slope surface of the slope portion to the light receiving surface satisfies 1 2 ? arcsin ? 1 n 1 ? ? ? 1 2 ? arctan ? L D using a refractive index n1 of the projection portion of the semiconductor layer, a length D of the semiconductor layer in a direction from the light receiving surface toward the projection portion, and a length L of the projection portion in the horizontal direction.

Abstract: According to an embodiment, a detection device includes a plurality of first detectors and a plurality of second detectors. The plurality of first detectors are arranged on a two-dimensional plane. Each first detector is configured to detect photons in a photon-counting manner. The plurality of second detectors are arranged on the two-dimensional plane. Each second detector is configured to detect photons in a charge-integrating manner.

Abstract: According to an embodiment, a photodetector includes a light converting unit, a first layer, a light detecting unit, and a second layer. The light converting unit converts radiation into light. The first layer absorbs the radiation. The light detecting unit is provided between the light converting unit and the first layer and detects light. The second layer is provided between the first layer and the light detecting unit, has a smaller average atomic weight than an average atomic weight of the first layer, and absorbs radiation scattered in the first layer and a fluorescent X-ray generated in the first layer.

Abstract: According to an embodiment, a photodetector includes a photo detection layer, light conversion members, and a first member. The photo detection layer includes, on a light incident surface, plural pixel regions and a surrounding region. The pixel region holds a photo detection element to detect the light. The surrounding region is a region other than the pixel regions on the light incident surface. The light conversion members are arranged to oppose the pixel regions in the photo detection layer and convert radiation to the light. Each light conversion member includes a bottom surface opposing the pixel region in the photo detection layer, a top surface opposing the bottom surface, and a lateral surface connecting the bottom and top surfaces. The first member is disposed on a portion of the surrounding region on the light incident surface and covers a portion of the lateral surface of the light conversion member.

Abstract: According to an embodiment, an apparatus includes a reference calculator, a peak calculator, a coefficient calculator, and a calibrator. The reference calculator is configured to calculate, as a first value, a most frequent electrical signal level from a first set of electrical signal levels output from the respective pixels of a detector for radiation. The peak calculator is configured to calculate, as a second value, a peak level of radiation energy of a characteristic X-ray, based on a relation between energy and intensity of radiation obtained from the first set. The coefficient calculator is configured to calculate a coefficient by dividing a difference between the first and second values by the peak level. The calibrator is configured to multiply an electrical signal level of each pixel by the coefficient and add the first value to the multiplication to calibrate a relation between detection output and incident radiation of the detector.

Abstract: According to an embodiment, a measuring device includes a plurality of scintillators, plurality of receiving elements, and a processor. The scintillators each convert incident radiation into light. The receiving elements each convert scintillation light received by a light receiving surface thereof into an electric signal. The processor acquires a value corresponding to an intensity of the incident radiation based on the electric signal. Each of the scintillators includes an incident surface on which the radiation is incident. The incident surface includes an inclination that has a predetermined angle with respect to the light receiving surface and that is asymmetric with respect to a center of the incident surface. The scintillators are arrayed on a plane including the light receiving surface.

Abstract: A method of manufacturing a radiation detector according to an embodiment includes: forming a plurality of scintillator array columns, each of the scintillator array columns being formed by preparing a scintillator member that a thickness being smaller than a length and a width, the scintillator member having a first face, a second face, a third face, and a fourth face, and being cut from the third face along the second direction to form at least a groove that penetrates from the first face to the second face but does not reach the fourth face to have an uncut portion near the fourth face; stacking the scintillator array columns in the first direction with a space between each of adjacent two scintillator array columns, and filling a spacer material into the space; inserting a reflector into each space and each groove; and cutting the uncut portion.

Abstract: A photodetector according to an embodiment includes: a semiconductor substrate with a first and second faces; a groove formed on the second face; pixels disposed to the semiconductor substrate, each pixel including: light detection cells disposed on the first face, each light detection cell having a first and second terminals, each light detection cell being surrounded by the groove; a first wiring line disposed on the first face to connect to the first terminal of each of the detection cells; a first opening formed in the second face and penetrating the semiconductor substrate; a first insulating film covering the second face, a side face of the first opening, and a side face and a bottom of the groove; a second opening formed in the first insulating film; a first and second electrodes disposed in the first and second openings respectively; and a light blocking material filled to the groove.

Abstract: According to an embodiment, an apparatus includes a first detector, a second detector, and a controller. The first detector is configured to detect first radiation at a first frequency within a first time by at least a first radiation detecting element and a second radiation detecting element that are positioned near to each other, and output a first signal. The second detector is configured to detect second radiation at a second frequency less than the first frequency within a second time by at least the first radiation detecting element and the second radiation detecting element, and output a second signal. The controller is configured to generate a third signal representing a difference between the first signal and the second signal, and calculate energy using the third signal.

Abstract: According to an embodiment, a photodetector includes a photodetecting element and first electrodes. In the photodetecting element, a plurality of pixel regions including a plurality of photodetection portions that detects light are arrayed on a first plane on which the light is incident. The first electrodes pass through a first layer including the photodetection portions in a second direction intersecting with the first plane. The first electrodes are provided respectively corresponding to the pixel regions arranged in an edge area of the first plane of the photodetecting element. The first electrodes are each arranged such that at least a part of a region thereof is arranged outside of the corresponding pixel region.