Patents by Inventor Ren-Fen Tsui

Ren-Fen Tsui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor Device and Method
    Publication number: 20170263555
    Abstract: A structure and method for the formation and use of fuses within a semiconductor device is provided. The fuses may be formed within the third metal layer and are formed so as to be arranged perpendicularly to active devices located on an underlying semiconductor substrate. Additionally, the fuses within the third metal layer may be formed thicker than an underlying second metal layer.
    Type: Application
    Filed: May 30, 2017
    Publication date: September 14, 2017
    Inventors: Dian-Sheg Yu, Ren-Fen Tsui, Jhon Jhy Liaw
  • SRAM Circuits with Aligned Gate Electrodes
    Publication number: 20170243872
    Abstract: A device includes a Static Random Access Memory (SRAM) array, and an SRAM cell edge region abutting the SRAM array. The SRAM array and the SRAM cell edge region in combination include first gate electrodes having a uniform pitch. A word line driver abuts the SRAM cell edge region. The word line driver includes second gate electrodes, and the first gate electrodes have lengthwise directions aligned to lengthwise directions of respective ones of the second gate electrodes.
    Type: Application
    Filed: July 5, 2016
    Publication date: August 24, 2017
    Inventors: Fang Chen, Jhon Jhy Liaw, Min-Chang Liang, Ren-Fen Tsui, Shih-Chi Fu, Yen-Huei Chen
  • Semiconductor device and method
    Patent number: 9666587
    Abstract: A structure and method for the formation and use of fuses within a semiconductor device is provided. The fuses may be formed within the third metal layer and are formed so as to be arranged perpendicularly to active devices located on an underlying semiconductor substrate. Additionally, the fuses within the third metal layer may be formed thicker than an underlying second metal layer.
    Type: Grant
    Filed: June 1, 2016
    Date of Patent: May 30, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Dian-Sheg Yu, Ren-Fen Tsui, Jhon Jhy Liaw
  • Connection structure for semiconductor devices
    Patent number: 7705464
    Abstract: The present disclosure relates generally to the manufacturing of semiconductor devices, and more particularly to an improved connection structure for semiconductor devices. A connection structure for a semiconductor device includes: a peanut-shaped opening comprising a narrow area and one or more wide areas, wherein the narrow area is between two of the one or more wide areas; and a conductive plug for filling at least partially the peanut-shaped opening.
    Type: Grant
    Filed: September 13, 2004
    Date of Patent: April 27, 2010
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jhon Jhy Liaw, Sung-Chun Hsieh, Wesley Lin, Chii-Ming W Wu, Ren-Fen Tsui
  • Stacked contact structure and method of fabricating the same
    Publication number: 20070257323
    Abstract: A stacked contact structure includes a first contact plug of a first conductive material filling a first contact hole in a first dielectric layer, and a second contact plug of a second conductive material filling a second contact hole in a second dielectric layer. The second conductive material is different from the first conductive material, and the second conductive material has an electrical resistance lower than that of the first conductive material.
    Type: Application
    Filed: May 5, 2006
    Publication date: November 8, 2007
    Inventors: Ren-Fen Tsui, Jiaw-Ren Shih
  • Connection structure for semiconductor devices
    Publication number: 20060055043
    Abstract: The present disclosure relates generally to the manufacturing of semiconductor devices, and more particularly to an improved connection structure for semiconductor devices. A connection structure for a semiconductor device includes: a peanut-shaped opening comprising a narrow area and one or more wide areas, wherein the narrow area is between two of the one or more wide areas; and a conductive plug for filling at least partially the peanut-shaped opening.
    Type: Application
    Filed: September 13, 2004
    Publication date: March 16, 2006
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jhon Liaw, Sung-Chun Hsieh, Wesley Lin, Chii-Ming Wu, Ren-Fen Tsui