Patents by Inventor Renato C. Padilla
Renato C. Padilla has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11923030Abstract: A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including initiating a read operation with respect to a block of the memory device, selecting, based on a set of criteria, a default read offset from a set of read offsets, wherein the set of criteria includes at least one of: a parameter related to trigger rate, or an amount of time that an open block is allowed to remain open to control threshold voltage shift due to storage charge loss, and applying the default read offset to a read operation performed with respect to the block.Type: GrantFiled: August 16, 2022Date of Patent: March 5, 2024Assignee: Micron Technology, Inc.Inventors: Gary F. Besinga, Renato C. Padilla, Tawalin Opastrakoon, Sampath K. Ratnam, Michael G. Miller, Christopher M. Smitchger, Vamsi Pavan Rayaprolu, Ashutosh Malshe
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Publication number: 20230393922Abstract: Respective error handling (EH) flags can be set based at least in part on media management data of a memory device. Whether any of the EH flags are set can be determined. In response to determining that at least one of the EH flags is set, a subset of a plurality of operations of an EH flow associated with the set EH flags can be performed.Type: ApplicationFiled: October 14, 2022Publication date: December 7, 2023Inventors: Sampath K. Ratnam, Sean Brasfield, Gary F. Besinga, Michael G. Miller, Renato C. Padilla, Tawalin Opastrakoon
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Patent number: 11810627Abstract: A processing device in a memory system maintains a counter to track a number of read operations performed on a data block of a memory device and determines that the number of read operations performed on the data block satisfies a first threshold criterion. The processing device further determines whether a number of scan operations performed on the data block satisfies a scan threshold criterion. Responsive to the number of scan operations performed on the data block satisfying the scan threshold criterion, the processing device performs a first data integrity scan to determine one or more first error rates for the data block, each of the one or more first error rates corresponding to a first set of wordlines of the data block, the first set comprising first alternating pairs of adjacent wordlines.Type: GrantFiled: August 12, 2022Date of Patent: November 7, 2023Assignee: Micron Technology, Inc.Inventors: Kishore Kumar Muchherla, Harish R. Singidi, Renato C. Padilla, Vamsi Pavan Rayaprolu, Ashutosh Malshe, Sampath K. Ratnam
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Patent number: 11797383Abstract: The present disclosure includes a redundant array of independent NAND for a three dimensional memory array. A number of embodiments include a three-dimensional array of memory cells, wherein the array includes a plurality of pages of memory cells, a number of the plurality of pages include a parity portion of a redundant array of independent NAND (RAIN) stripe, and the parity portion of the RAIN stripe in each respective page comprises only a portion of that respective page.Type: GrantFiled: February 4, 2021Date of Patent: October 24, 2023Assignee: Micron Technology, Inc.Inventors: Jung Sheng Hoei, Sampath K. Ratnam, Renato C. Padilla, Kishore K. Muchherla, Sivagnanam Parthasarathy, Peter Feeley
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Patent number: 11789862Abstract: A total estimated occupancy value of a first data on a first data block of a plurality of data blocks is determined. To determine the total estimated occupancy value of the first data block, a total block power-on-time (POT) value of the first data block is determined. Then, a scaling factor is applied to the total block POT value to determine the total estimated occupancy value of the first data block. Whether the total estimated occupancy value of the first data block satisfies a threshold criterion is determined. Responsive to determining that the total estimated occupancy value of the first data block satisfies the threshold criterion, data stored at the first data block is relocated to a second data block of the plurality of data blocks.Type: GrantFiled: June 7, 2022Date of Patent: October 17, 2023Assignee: Micron Technology, Inc.Inventors: Kishore Kumar Muchherla, Renato C. Padilla, Sampath K. Ratnam, Saeed Sharifi Tehrani, Peter Feeley, Kevin R. Brandt
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Patent number: 11756625Abstract: In one embodiment, a memory system receives a request to perform a memory access operation, the request identifying a memory cell in a segment of the memory system comprising at least a portion of the memory device. The system determines that an operating temperature of the memory device satisfies a threshold criterion. Responsive to determining that the operating temperature of the memory device satisfies the threshold criterion, the system determines a temperature compensation value corresponding to an access control voltage adjustment value specific to the segment of the memory system. The system adjusts, based on an amount represented by the temperature compensation value, an access control voltage applied to the memory cell during the memory access operation.Type: GrantFiled: March 12, 2021Date of Patent: September 12, 2023Assignee: Micron Technology, Inc.Inventor: Renato C. Padilla
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Publication number: 20230268014Abstract: A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including detecting a power up event of the memory device, responsive to detecting the power up event, selecting an open block of the memory device, wherein the open block comprises a set of pages, determining, based at least in part on an analysis of the set of pages, whether the open block is valid for programming, and responsive to determining that the open block is valid for programming, keeping the open block open for programming.Type: ApplicationFiled: February 18, 2022Publication date: August 24, 2023Inventors: Gary F. Besinga, Vamsi Pavan Rayaprolu, Steven Michael Kientz, Renato C. Padilla
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Patent number: 11721404Abstract: Apparatuses and methods for operating mixed mode blocks. One example method can include tracking single level cell (SLC) mode cycles and extra level cell (XLC) mode cycles performed on the mixed mode blocks, maintaining a mixed mode cycle count corresponding to the mixed mode blocks, and adjusting the mixed mode cycle count differently for mixed mode blocks operated in a SLC mode than for mixed blocks operated in a XLC mode.Type: GrantFiled: September 24, 2021Date of Patent: August 8, 2023Assignee: Micron Technology, Inc.Inventors: Kishore K. Muchherla, Ashutosh Malshe, Preston A. Thomson, Michael G. Miller, Gary F. Besinga, Scott A. Stoller, Sampath K. Ratnam, Renato C. Padilla, Peter Feeley
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Patent number: 11715541Abstract: A method includes associating each block of a plurality of blocks of a memory device with a corresponding frequency access group of a plurality of frequency access groups based on corresponding access frequencies, and performing scan operations on blocks of each of the plurality of frequency access groups using a scan frequency that is different from scan frequencies of other frequency access groups. A scan operation performed on a frequency access group with a higher access frequency uses a higher scan frequency than a scan operation performed on a frequency access group with a lower access frequency.Type: GrantFiled: July 18, 2022Date of Patent: August 1, 2023Assignee: Micron Technology, Inc.Inventors: Renato C. Padilla, Sampath K. Ratnam, Christopher M. Smitchger, Vamsi Pavan Rayaprolu, Gary F. Besinga, Michael G. Miller, Tawalin Opastrakoon
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Patent number: 11715530Abstract: Several embodiments of memory devices and systems with offset memory component automatic calibration error recovery are disclosed herein. In one embodiment, a system includes at least one memory region and calibration circuitry. The memory region has memory cells that read out data states in response to application of a current read level signal. The calibration circuitry is operably coupled to the at least one memory region and is configured to determine a read level offset value corresponding to one or more of a plurality of offset read level test signals, including a base offset read level test signal. The base offset read level test signal is offset from the current read level signal by a predetermined value. The calibration circuitry is further configured to output the determined read level offset value.Type: GrantFiled: June 10, 2022Date of Patent: August 1, 2023Assignee: Micron Technology, Inc.Inventors: Bruce A. Liikanen, Gerald L. Cadloni, Gary F. Besinga, Michael G. Miller, Renato C. Padilla
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Patent number: 11715531Abstract: A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including identifying an amount of storage charge loss (SCL) that has occurred on an open block of the memory device, the open block having one or more erased pages, determining that the amount of SCL satisfies a threshold criterion corresponding to an acceptable amount of SCL to occur on the open block, and responsive to determining that the amount of SCL satisfies the threshold criterion, keeping the open block open for programming the one or more erased pages.Type: GrantFiled: March 24, 2021Date of Patent: August 1, 2023Assignee: Micron Technology, Inc.Inventors: Christopher M. Smitchger, Gary F. Besinga, Renato C. Padilla, Tawalin Opastrakoon, Sampath K. Ratnam, Michael G. Miller, Vamsi Pavan Rayaprolu, Ashutosh Malshe
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Patent number: 11687452Abstract: An amount of threshold voltage distribution shift is determined. The threshold voltage distribution shift corresponds to an amount of time after programming of a reference page of a block of a memory device. A program-verify voltage is adjusted based on the amount of threshold voltage distribution shift to obtain an adjusted program-verify voltage. Using the adjusted program-verify voltage, a temporally subsequent page of the block is programmed at a time corresponding to the amount of time after the programming of the reference page.Type: GrantFiled: December 16, 2020Date of Patent: June 27, 2023Assignee: Micron Technology, Inc.Inventors: Gary F. Besinga, Renato C. Padilla, Tawalin Opastrakoon, Sampath K. Ratnam, Michael G. Miller, Christopher M. Smitchger, Vamsi Pavan Rayaprolu, Ashutosh Malshe
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Patent number: 11586357Abstract: The present disclosure includes memory blocks erasable in a single level cell mode. A number of embodiments include a memory comprising a plurality of mixed mode blocks and a controller. The controller may be configured to identify a particular mixed mode block for an erase operation and, responsive to a determined intent to subsequently write the particular mixed mode block in a single level cell (SLC) mode, perform the erase operation in the SLC mode.Type: GrantFiled: May 27, 2021Date of Patent: February 21, 2023Assignee: Micron Technology, Inc.Inventors: Kishore K. Muchherla, Ashutosh Malshe, Preston A. Thomson, Michael G. Miller, Sampath K. Ratnam, Renato C. Padilla, Peter Feeley
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Publication number: 20230049877Abstract: A first host data item and a second host data item are received. The first host data item is stored in a first page of a first logical unit of a memory device, where the first page is one of a plurality of pages associated with redundancy metadata. A second page a second page of a second logical unit of the memory device is identified, where the second page is one of the plurality of pages associated with the redundancy metadata, and the first page and the second page are associated with different wordlines of the memory device. The second host data item is stored in the second page of the second logical unit of the memory device. The first page and the second page can be associated with a fault tolerant stripe that includes the redundancy metadata.Type: ApplicationFiled: October 31, 2022Publication date: February 16, 2023Inventors: Tawalin Opastrakoon, Renato C. Padilla, Michael G. Miller, Christopher M. Smitchger, Gary F. Besinga, Sampath K. Ratnam, Vamsi Pavan Rayaprolu
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Publication number: 20220391127Abstract: A plurality of host data items, including a first host data item and a second host data item, are received. The second host data item consecutively follows the first host data item. The first host data item is stored in a first page of a first logical unit of the memory device, wherein the first page is associated with a first page number. A second page number is determined for the second host data item based on an offset value that corresponds to a number of pages per wordline of the memory device. A second logical unit of the memory device is identified. The second host data item is stored in a second page of the second logical unit, wherein the second page is identified by the second page number, and the first page and the second page are associated with a fault-tolerant stripe.Type: ApplicationFiled: June 4, 2021Publication date: December 8, 2022Inventors: Tawalin Opastrakoon, Renato C. Padilla, Michael G. Miller, Christopher M. Smitchger, Gary F. Besinga, Sampath K. Ratnam, Vamsi Pavan Rayaprolu
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Publication number: 20220392561Abstract: A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including initiating a read operation with respect to a block of the memory device, selecting, based on a set of criteria, a default read offset from a set of read offsets, wherein the set of criteria includes at least one of: a parameter related to trigger rate, or an amount of time that an open block is allowed to remain open to control threshold voltage shift due to storage charge loss, and applying the default read offset to a read operation performed with respect to the block.Type: ApplicationFiled: August 16, 2022Publication date: December 8, 2022Inventors: Gary F. Besinga, Renato C. Padilla, Tawalin Opastrakoon, Sampath K. Ratnam, Michael G. Miller, Christopher M. Smitchger, Vamsi Pavan Rayaprolu, Ashutosh Malshe
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Publication number: 20220383962Abstract: A processing device in a memory system maintains a counter to track a number of read operations performed on a data block of a memory device and determines that the number of read operations performed on the data block satisfies a first threshold criterion. The processing device further determines whether a number of scan operations performed on the data block satisfies a scan threshold criterion. Responsive to the number of scan operations performed on the data block satisfying the scan threshold criterion, the processing device performs a first data integrity scan to determine one or more first error rates for the data block, each of the one or more first error rates corresponding to a first set of wordlines of the data block, the first set comprising first alternating pairs of adjacent wordlines.Type: ApplicationFiled: August 12, 2022Publication date: December 1, 2022Inventors: Kishore Kumar Muchherla, Harish R. Singidi, Renato C. Padilla, Vamsi Pavan Rayaprolu, Ashutosh Malshe, Sampath K. Ratnam
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Patent number: 11507304Abstract: A plurality of host data items, including a first host data item and a second host data item, are received. The second host data item consecutively follows the first host data item. The first host data item is stored in a first page of a first logical unit of the memory device, wherein the first page is associated with a first page number. A second page number is determined for the second host data item based on an offset value that corresponds to a number of pages per wordline of the memory device. A second logical unit of the memory device is identified. The second host data item is stored in a second page of the second logical unit, wherein the second page is identified by the second page number, and the first page and the second page are associated with a fault-tolerant stripe.Type: GrantFiled: June 4, 2021Date of Patent: November 22, 2022Assignee: MICRON TECHNOLOGY, INC.Inventors: Tawalin Opastrakoon, Renato C. Padilla, Michael G. Miller, Christopher M. Smitchger, Gary F. Besinga, Sampath K. Ratnam, Vamsi Pavan Rayaprolu
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Publication number: 20220351796Abstract: A method includes associating each block of a plurality of blocks of a memory device with a corresponding frequency access group of a plurality of frequency access groups based on corresponding access frequencies, and performing scan operations on blocks of each of the plurality of frequency access groups using a scan frequency that is different from scan frequencies of other frequency access groups. A scan operation performed on a frequency access group with a higher access frequency uses a higher scan frequency than a scan operation performed on a frequency access group with a lower access frequency.Type: ApplicationFiled: July 18, 2022Publication date: November 3, 2022Inventors: Renato C. Padilla, Sampath K. Ratnam, Christopher M. Smitchger, Vamsi Pavan Rayaprolu, Gary F. Besinga, Michael G. Miller, Tawalin Opastrakoon
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Publication number: 20220310183Abstract: A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including identifying an amount of storage charge loss (SCL) that has occurred on an open block of the memory device, the open block having one or more erased pages, determining that the amount of SCL satisfies a threshold criterion corresponding to an acceptable amount of SCL to occur on the open block, and responsive to determining that the amount of SCL satisfies the threshold criterion, keeping the open block open for programming the one or more erased pages.Type: ApplicationFiled: March 24, 2021Publication date: September 29, 2022Inventors: Christopher M. Smitchger, Gary F. Besinga, Renato C. Padilla, Tawalin Opastrakoon, Sampath K. Ratnam, Michael G. Miller, Vamsi Pavan Rayaprolu, Ashutosh Malshe