Patents by Inventor Renu Whig

Renu Whig has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10897008
    Abstract: A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (i) a first layer of one or more ferromagnetic materials, including cobalt, (ii) a multi-layer region including a plurality of layers of ferromagnetic materials, wherein the plurality of layers of ferromagnetic materials include a layer of one or more ferromagnetic materials including cobalt, and (iii) an anti-ferromagnetic coupling layer disposed between the first layer and the multi-layer region. The free magnetic region may include a circular shape, the one or more ferromagnetic materials of the first layer may include cobalt, iron and boron, and the dielectric layer may be disposed on the first layer.
    Type: Grant
    Filed: June 2, 2020
    Date of Patent: January 19, 2021
    Assignee: Everspin Technologies, Inc.
    Inventors: Srinivas V. Pietambaram, Bengt J. Akerman, Renu Whig, Jason A. Janesky, Nicholas D. Rizzo, Jon M. Slaughter
  • Publication number: 20200295255
    Abstract: A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (1) a first layer of one or more ferromagnetic materials, including cobalt, (ii) a multi-layer region including a plurality of layers of ferromagnetic materials, wherein the plurality of layers of ferromagnetic materials include a layer of one or more ferromagnetic materials including cobalt, and (iii) an anti-ferromagnetic coupling layer disposed between the first layer and the multi-layer region. The free magnetic region may include a circular shape, the one or more ferromagnetic materials of the first layer may include cobalt, iron and boron, and the dielectric layer may he disposed on the first layer.
    Type: Application
    Filed: June 2, 2020
    Publication date: September 17, 2020
    Applicant: Everspin Technologies, Inc.
    Inventors: Srinivas V. PIETAMBARAM, Bengt J. AKERMAN, Renu WHIG, Jason A. JANESKY, Nicholas D. RIZZO, Jon M. SLAUGHTER
  • Publication number: 20200266235
    Abstract: A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/?10%) and less than or equal to 60 Angstroms (+/?10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/?10%) or 30-50 atomic percent (+/?10%).
    Type: Application
    Filed: May 8, 2020
    Publication date: August 20, 2020
    Applicant: Everspin Technologies, Inc.
    Inventors: Jijun SUN, Sanjeev AGGARWAL, Han-Jong CHIA, Jon M. SLAUGHTER, Renu WHIG
  • Patent number: 10707410
    Abstract: A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (i) a first layer of one or more ferromagnetic materials, including cobalt, (ii) a multi-layer region including a plurality of layers of ferromagnetic materials, wherein the plurality of layers of ferromagnetic materials include a layer of one or more ferromagnetic materials including cobalt, and (iii) an anti-ferromagnetic coupling layer disposed between the first layer and the multi-layer region. The free magnetic region may include a circular shape, the one or more ferromagnetic materials of the first layer may include cobalt, iron and boron, and the dielectric layer may be disposed on the first layer.
    Type: Grant
    Filed: December 19, 2018
    Date of Patent: July 7, 2020
    Assignee: Everspin Technologies, Inc.
    Inventors: Srinivas V. Pietambaram, Bengt J. Akerman, Renu Whig, Jason A. Janesky, Nicholas D. Rizzo, Jon M. Slaughter
  • Patent number: 10692926
    Abstract: A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/?10%) and less than or equal to 60 Angstroms (+/?10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/?10%) or 30-50 atomic percent (+/?10%).
    Type: Grant
    Filed: October 15, 2019
    Date of Patent: June 23, 2020
    Assignee: Everspin Technologies, Inc.
    Inventors: Jijun Sun, Sanjeev Aggarwal, Han-Jong Chia, Jon M. Slaughter, Renu Whig
  • Patent number: 10622552
    Abstract: A magnetoresistive stack includes a seed region formed above a base region, a fixed magnetic region formed above the seed region and an intermediate region positioned between the fixed magnetic region and a free magnetic region. The base region may be formed of a material having a lower standard free energy of oxidation than iron.
    Type: Grant
    Filed: November 2, 2018
    Date of Patent: April 14, 2020
    Assignee: Everspin Technologies, Inc.
    Inventors: Sumio Ikegawa, Jon Slaughter, Renu Whig
  • Patent number: 10622554
    Abstract: A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.
    Type: Grant
    Filed: May 22, 2019
    Date of Patent: April 14, 2020
    Assignee: Everspin Technologies, Inc.
    Inventors: Renu Whig, Jijun Sun, Nicholas Rizzo, Jon Slaughter, Dimitri Houssameddine, Frederick Mancoff
  • Publication number: 20200091420
    Abstract: Methods and apparatus for forming a magnetic tunnel element are provided herein. A method of forming a magnetic tunnel element includes: depositing a magnetic layer atop a cobalt-chromium seed layer; and depositing a tunnel layer atop the magnetic layer to form a magnetic tunnel element, wherein the magnetic tunnel element has a TMR greater than 100. For example, a cobalt/platinum material or one or more layers thereof may be deposited directly atop a cobalt-chromium seed layer to produce improved devices.
    Type: Application
    Filed: September 13, 2019
    Publication date: March 19, 2020
    Inventors: CHI CHING, RENU WHIG, RONGJUN WANG
  • Publication number: 20200043979
    Abstract: A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/?10%) and less than or equal to 60 Angstroms (+/?10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/?10%) or 30-50 atomic percent (+/?10%).
    Type: Application
    Filed: October 15, 2019
    Publication date: February 6, 2020
    Applicant: Everspin Technologies, Inc.
    Inventors: Jijun SUN, Sanjeev AGGARWAL, Han-Jong CHIA, Jon M. SLAUGHTER, Renu WHIG
  • Patent number: 10516103
    Abstract: A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.
    Type: Grant
    Filed: August 27, 2019
    Date of Patent: December 24, 2019
    Assignee: Everspin Technologies, Inc.
    Inventors: Renu Whig, Jijun Sun, Nicholas Rizzo, Jon Slaughter, Dimitri Houssameddine, Frederick Mancoff
  • Publication number: 20190386212
    Abstract: A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.
    Type: Application
    Filed: August 27, 2019
    Publication date: December 19, 2019
    Applicant: Everspin Technologies, Inc.
    Inventors: Renu WHIG, Jijun SUN, Nicholas RIZZO, Jon SLAUGHTER, Dimitri HOUSSAMEDDINE, Frederick MANCOFF
  • Patent number: 10483320
    Abstract: A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/?10%) and less than or equal to 60 Angstroms (+/?10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/?10%) or 30-50 atomic percent (+/?10%).
    Type: Grant
    Filed: November 19, 2018
    Date of Patent: November 19, 2019
    Assignee: Everspin Technologies, Inc.
    Inventors: Jijun Sun, Sanjeev Aggarwal, Han-Jong Chia, Jon M. Slaughter, Renu Whig
  • Publication number: 20190280198
    Abstract: A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.
    Type: Application
    Filed: May 22, 2019
    Publication date: September 12, 2019
    Applicant: EVERSPIN TECHNOLOGIES, INC.
    Inventors: Renu WHIG, Jijun SUN, Nicholas RIZZO, Jon SLAUGHTER, Dimitri HOUSSAMEDDINE, Frederick MANCOFF
  • Publication number: 20190221737
    Abstract: A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a ā€œZā€ axis magnetic field onto sensors orientated in the XY plane.
    Type: Application
    Filed: March 21, 2019
    Publication date: July 18, 2019
    Applicant: EVERSPIN TECHNOLOGIES, INC.
    Inventors: Renu WHIG, Phillip MATHER, Kenneth SMITH, Sanjeev AGGARWAL, Jon SLAUGHTER, Nicholas RIZZO
  • Patent number: 10347828
    Abstract: A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: July 9, 2019
    Assignee: Everspin Technologies, Inc.
    Inventors: Renu Whig, Jijun Sun, Nicholas Rizzo, Jon Slaughter, Dimitri Houssameddine, Frederick Mancoff
  • Publication number: 20190165253
    Abstract: A magnetically free region of magnetoresistive device includes at least a first ferromagnetic region and a second ferromagnetic region separated by a non-magnetic insertion region. At least one of the first ferromagnetic region and the second ferromagnetic region may include at least a boron-rich ferromagnetic layer positioned proximate a boron-free ferromagnetic layer.
    Type: Application
    Filed: November 13, 2018
    Publication date: May 30, 2019
    Applicant: Everspin Technologies, Inc.
    Inventors: Jijun SUN, Jon SLAUGHTER, Renu WHIG
  • Publication number: 20190131519
    Abstract: A magnetoresistive stack includes a seed region formed above a base region, a fixed magnetic region formed above the seed region and an intermediate region positioned between the fixed magnetic region and a free magnetic region. The base region may be formed of a material having a lower standard free energy of oxidation than iron.
    Type: Application
    Filed: November 2, 2018
    Publication date: May 2, 2019
    Applicant: Everspin Technologies, Inc.
    Inventors: Sumio Ikegawa, Jon Slaughter, Renu Whig
  • Patent number: 10276789
    Abstract: A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a ā€œZā€ axis magnetic field onto sensors orientated in the XY plane.
    Type: Grant
    Filed: January 3, 2018
    Date of Patent: April 30, 2019
    Assignee: Everspin Technologies, Inc.
    Inventors: Renu Whig, Phillip Mather, Kenneth Smith, Sanjeev Aggarwal, Jon Slaughter, Nicholas Rizzo
  • Publication number: 20190123268
    Abstract: A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.
    Type: Application
    Filed: December 21, 2018
    Publication date: April 25, 2019
    Applicant: EVERSPIN TECHNOLOGIES, INC.
    Inventors: Renu WHIG, Jijun SUN, Nicholas RIZZO, Jon SLAUGHTER, Dimitri HOUSSAMEDDINE, Frederick MANCOFF
  • Publication number: 20190123266
    Abstract: A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (i) a first layer of one or more ferromagnetic materials, including cobalt, (ii) a multi-layer region including a plurality of layers of ferromagnetic materials, wherein the plurality of layers of ferromagnetic materials include a layer of one or more ferromagnetic materials including cobalt, and (iii) an anti-ferromagnetic coupling layer disposed between the first layer and the multi-layer region. The free magnetic region may include a circular shape, the one or more ferromagnetic materials of the first layer may include cobalt, iron and boron, and the dielectric layer may be disposed on the first layer.
    Type: Application
    Filed: December 19, 2018
    Publication date: April 25, 2019
    Applicant: Everspin Technologies, Inc.
    Inventors: Srinivas V. PIETAMBARAM, Bengt J. AKERMAN, Renu WHIG, Jason A. JANESKY, Nicholas D. RIZZO, Jon M. SLAUGHTER