Patents by Inventor Renu Whig
Renu Whig has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240090335Abstract: A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a “Z” axis magnetic field onto sensors orientated in the XY plane.Type: ApplicationFiled: April 26, 2023Publication date: March 14, 2024Applicant: EVERSPIN TECHNOLOGIES, INC.Inventors: Renu WHIG, Phillip MATHER, Kenneth SMITH, Sanjeev AGGARWAL, Jon SLAUGHTER, Nicholas RIZZO
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Patent number: 11898236Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a processing chamber for processing a substrate comprises a sputtering target, a chamber wall at least partially defining an inner volume within the processing chamber and connected to ground, a power source comprising an RF power source, a process kit surrounding the sputtering target and a substrate support, an auto capacitor tuner (ACT) connected to ground and the sputtering target, and a controller configured to energize the cleaning gas disposed in the inner volume of the processing chamber to create the plasma and tune the sputtering target using the ACT to maintain a predetermined potential difference between the plasma in the inner volume and the process kit during the etch process to remove sputtering material from the process kit, wherein the predetermined potential difference is based on a resonant point of the ACT.Type: GrantFiled: October 20, 2021Date of Patent: February 13, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Zhiyong Wang, Halbert Chong, John C. Forster, Irena H. Wysok, Tiefeng Shi, Gang Fu, Renu Whig, Keith A Miller, Sundarapandian Ramalinga Vijayalakshmi Reddy, Jianxin Lei, Rongjun Wang, Tza-Jing Gung, Kirankumar Neelasandra Savandaiah, Avinash Nayak, Lei Zhou
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Publication number: 20230380297Abstract: A magnetically free region of magnetoresistive device includes at least a first ferromagnetic region and a second ferromagnetic region separated by a non-magnetic insertion region. At least one of the first ferromagnetic region and the second ferromagnetic region may include at least a boron-rich ferromagnetic layer positioned proximate a boron-free ferromagnetic layer.Type: ApplicationFiled: July 27, 2023Publication date: November 23, 2023Applicant: Everspin Technologies, Inc.Inventors: Jijun SUN, Jon SLAUGHTER, Renu WHIG
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Patent number: 11758823Abstract: A magnetically free region of magnetoresistive device includes at least a first ferromagnetic region and a second ferromagnetic region separated by a non-magnetic insertion region. At least one of the first ferromagnetic region and the second ferromagnetic region may include at least a boron-rich ferromagnetic layer positioned proximate a boron-free ferromagnetic layer.Type: GrantFiled: November 13, 2018Date of Patent: September 12, 2023Assignee: EVERSPIN TECHNOLOGIES, INC.Inventors: Jijun Sun, Jon Slaughter, Renu Whig
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Patent number: 11744161Abstract: A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (i) a first layer of one or more ferromagnetic materials, including cobalt, (ii) a multi-layer region including a plurality of layers of ferromagnetic materials, wherein the plurality of layers of ferromagnetic materials include a layer of one or more ferromagnetic materials including cobalt, and (iii) an anti-ferromagnetic coupling layer disposed between the first layer and the multi-layer region. The free magnetic region may include a circular shape, the one or more ferromagnetic materials of the first layer may include cobalt, iron and boron, and the dielectric layer may be disposed on the first layer.Type: GrantFiled: December 14, 2020Date of Patent: August 29, 2023Assignee: Everspin Technologies, Inc.Inventors: Srinivas V. Pietambaram, Bengt J. Akerman, Renu Whig, Jason A. Janesky, Nicholas D. Rizzo, Jon M. Slaughter
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Publication number: 20230225135Abstract: A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/?10%) and less than or equal to 60 Angstroms (+/?10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/?10%) or 30-50 atomic percent (+/?10%).Type: ApplicationFiled: March 17, 2023Publication date: July 13, 2023Applicant: Everspin Technologies, Inc.Inventors: Jijun SUN, Sanjeev AGGARWAL, Han-Jong CHIA, Jon M. SLAUGHTER, Renu WHIG
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Patent number: 11690229Abstract: A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/?10%) and less than or equal to 60 Angstroms (+/?10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/?10%) or 30-50 atomic percent (+/?10%).Type: GrantFiled: December 23, 2020Date of Patent: June 27, 2023Assignee: EVERSPIN TECHNOLOGIES, INC.Inventors: Jijun Sun, Sanjeev Aggarwal, Han-Jong Chia, Jon M. Slaughter, Renu Whig
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Patent number: 11678584Abstract: A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a “Z” axis magnetic field onto sensors orientated in the XY plane.Type: GrantFiled: April 30, 2021Date of Patent: June 13, 2023Assignee: EVERSPIN TECHNOLOGIES, INC.Inventors: Renu Whig, Phillip Mather, Kenneth Smith, Sanjeev Aggarwal, Jon Slaughter, Nicholas Rizzo
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Publication number: 20230122956Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a processing chamber for processing a substrate comprises a sputtering target, a chamber wall at least partially defining an inner volume within the processing chamber and connected to ground, a power source comprising an RF power source, a process kit surrounding the sputtering target and a substrate support, an auto capacitor tuner (ACT) connected to ground and the sputtering target, and a controller configured to energize the cleaning gas disposed in the inner volume of the processing chamber to create the plasma and tune the sputtering target using the ACT to maintain a predetermined potential difference between the plasma in the inner volume and the process kit during the etch process to remove sputtering material from the process kit, wherein the predetermined potential difference is based on a resonant point of the ACT.Type: ApplicationFiled: October 20, 2021Publication date: April 20, 2023Inventors: Zhiyong WANG, Halbert CHONG, John C. FORSTER, Irena H. WYSOK, Tiefeng SHI, Gang FU, Renu WHIG, Keith A. MILLER, Sundarapandian Ramalinga Vijayalakshmi REDDY, Jianxin LEI, Rongjun WANG, Tza-Jing GUNG, Kirankumar Neelasandra SAVANDAIAH, Avinash NAYAK, Lei ZHOU
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Patent number: 11489110Abstract: A method of forming a tunnel layer of a magnetoresistive random-access memory (MRAM) structure includes forming a first magnesium oxide (MgO) layer by sputtering an MgO target using radio frequency (RF) power, exposing the first MgO layer to oxygen for approximately 5 seconds to approximately 20 seconds at a flow rate of approximately 10 sccm to approximately 15 sccm, and forming a second MgO layer on the first MgO layer by sputtering the MgO target using RF power. The method may be performed after periodic maintenance of a process chamber to increase the tunnel magnetoresistance (TMR) of the tunnel layer.Type: GrantFiled: April 10, 2020Date of Patent: November 1, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Xiaodong Wang, Renu Whig, Jianxin Lei, Rongjun Wang
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Publication number: 20210320246Abstract: A method of forming a tunnel layer of a magnetoresistive random-access memory (MRAM) structure includes forming a first magnesium oxide (MgO) layer by sputtering an MgO target using radio frequency (RF) power, exposing the first MgO layer to oxygen for approximately 5 seconds to approximately 20 seconds at a flow rate of approximately 10 sccm to approximately 15 sccm, and forming a second MgO layer on the first MgO layer by sputtering the MgO target using RF power. The method may be performed after periodic maintenance of a process chamber to increase the tunnel magnetoresistance (TMR) of the tunnel layer.Type: ApplicationFiled: April 10, 2020Publication date: October 14, 2021Inventors: Xiaodong WANG, Renu WHIG, Jianxin LEI, Rongjun WANG
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Publication number: 20210288245Abstract: A magnetoresistive device includes a magnetically fixed region and a magnetically free region positioned on opposite sides of a tunnel barrier region. One or more transition regions, including at least a first transition region and second transition region, is positioned between the magnetically fixed region and the tunnel barrier region. The first transition region includes a non-ferromagnetic transition metal and the second transition region includes an alloy including iron and boron.Type: ApplicationFiled: July 29, 2019Publication date: September 16, 2021Applicant: Everspin Technologies, Inc.Inventors: Renu WHIG, Sumio IKEGAWA, Jon SLAUGHTER, Michael TRAN, Jacob Wang CHENCHEN, Ganesh Kolliyil RAJAN
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Publication number: 20210265563Abstract: A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a “Z” axis magnetic field onto sensors orientated in the XY plane.Type: ApplicationFiled: April 30, 2021Publication date: August 26, 2021Applicant: EVERSPIN TECHNOLOGIES, INC.Inventors: Renu WHIG, Phillip MATHER, Kenneth SMITH, Sanjeev AGGARWAL, Jon SLAUGHTER, Nicholas RIZZO
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Patent number: 11024799Abstract: A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a “Z” axis magnetic field onto sensors orientated in the XY plane.Type: GrantFiled: March 21, 2019Date of Patent: June 1, 2021Assignee: Everspin Technologies, Inc.Inventors: Renu Whig, Phillip Mather, Kenneth Smith, Sanjeev Aggarwal, Jon Slaughter, Nicholas Rizzo
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Publication number: 20210135096Abstract: A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (i) a first layer of one or more ferromagnetic materials, including cobalt, (ii) a multi-layer region including a plurality of layers of ferromagnetic materials, wherein the plurality of layers of ferromagnetic materials include a layer of one or more ferromagnetic materials including cobalt, and (iii) an anti-ferromagnetic coupling layer disposed between the first layer and the multi-layer region. The free magnetic region may include a circular shape, the one or more ferromagnetic materials of the first layer may include cobalt, iron and boron, and the dielectric layer may be disposed on the first layer.Type: ApplicationFiled: December 14, 2020Publication date: May 6, 2021Applicant: Everspin Technologies, Inc.Inventors: Srinivas V. PIETAMBARAM, Bengt J. AKERMAN, Renu WHIG, Jason A. JANESKY, Nicholas D. RIZZO, Jon M. SLAUGHTER
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Publication number: 20210111223Abstract: A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/?10%) and less than or equal to 60 Angstroms (+/?10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/?10%) or 30-50 atomic percent (+/?10%).Type: ApplicationFiled: December 23, 2020Publication date: April 15, 2021Applicant: Everspin Technologies, Inc.Inventors: Jijun SUN, Sanjeev AGGARWAL, Han-Jong CHIA, Jon M. SLAUGHTER, Renu WHIG
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Patent number: 10910557Abstract: Methods and apparatus for forming a magnetic tunnel element are provided herein. A method of forming a magnetic tunnel element includes: depositing a magnetic layer atop a cobalt-chromium seed layer; and depositing a tunnel layer atop the magnetic layer to form a magnetic tunnel element, wherein the magnetic tunnel element has a TMR greater than 100. For example, a cobalt/platinum material or one or more layers thereof may be deposited directly atop a cobalt-chromium seed layer to produce improved devices.Type: GrantFiled: September 13, 2019Date of Patent: February 2, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Chi Ching, Renu Whig, Rongjun Wang
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Patent number: 10910434Abstract: A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/?10%) and less than or equal to 60 Angstroms (+/?10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/?10%) or 30-50 atomic percent (+/?10%).Type: GrantFiled: May 8, 2020Date of Patent: February 2, 2021Assignee: Everspin Technologies, Inc.Inventors: Jijun Sun, Sanjeev Aggarwal, Han-Jong Chia, Jon M. Slaughter, Renu Whig
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Patent number: 10897008Abstract: A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (i) a first layer of one or more ferromagnetic materials, including cobalt, (ii) a multi-layer region including a plurality of layers of ferromagnetic materials, wherein the plurality of layers of ferromagnetic materials include a layer of one or more ferromagnetic materials including cobalt, and (iii) an anti-ferromagnetic coupling layer disposed between the first layer and the multi-layer region. The free magnetic region may include a circular shape, the one or more ferromagnetic materials of the first layer may include cobalt, iron and boron, and the dielectric layer may be disposed on the first layer.Type: GrantFiled: June 2, 2020Date of Patent: January 19, 2021Assignee: Everspin Technologies, Inc.Inventors: Srinivas V. Pietambaram, Bengt J. Akerman, Renu Whig, Jason A. Janesky, Nicholas D. Rizzo, Jon M. Slaughter
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Publication number: 20200295255Abstract: A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (1) a first layer of one or more ferromagnetic materials, including cobalt, (ii) a multi-layer region including a plurality of layers of ferromagnetic materials, wherein the plurality of layers of ferromagnetic materials include a layer of one or more ferromagnetic materials including cobalt, and (iii) an anti-ferromagnetic coupling layer disposed between the first layer and the multi-layer region. The free magnetic region may include a circular shape, the one or more ferromagnetic materials of the first layer may include cobalt, iron and boron, and the dielectric layer may he disposed on the first layer.Type: ApplicationFiled: June 2, 2020Publication date: September 17, 2020Applicant: Everspin Technologies, Inc.Inventors: Srinivas V. PIETAMBARAM, Bengt J. AKERMAN, Renu WHIG, Jason A. JANESKY, Nicholas D. RIZZO, Jon M. SLAUGHTER