Patents by Inventor Renu Whig
Renu Whig has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200266235Abstract: A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/?10%) and less than or equal to 60 Angstroms (+/?10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/?10%) or 30-50 atomic percent (+/?10%).Type: ApplicationFiled: May 8, 2020Publication date: August 20, 2020Applicant: Everspin Technologies, Inc.Inventors: Jijun SUN, Sanjeev AGGARWAL, Han-Jong CHIA, Jon M. SLAUGHTER, Renu WHIG
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Patent number: 10707410Abstract: A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (i) a first layer of one or more ferromagnetic materials, including cobalt, (ii) a multi-layer region including a plurality of layers of ferromagnetic materials, wherein the plurality of layers of ferromagnetic materials include a layer of one or more ferromagnetic materials including cobalt, and (iii) an anti-ferromagnetic coupling layer disposed between the first layer and the multi-layer region. The free magnetic region may include a circular shape, the one or more ferromagnetic materials of the first layer may include cobalt, iron and boron, and the dielectric layer may be disposed on the first layer.Type: GrantFiled: December 19, 2018Date of Patent: July 7, 2020Assignee: Everspin Technologies, Inc.Inventors: Srinivas V. Pietambaram, Bengt J. Akerman, Renu Whig, Jason A. Janesky, Nicholas D. Rizzo, Jon M. Slaughter
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Patent number: 10692926Abstract: A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/?10%) and less than or equal to 60 Angstroms (+/?10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/?10%) or 30-50 atomic percent (+/?10%).Type: GrantFiled: October 15, 2019Date of Patent: June 23, 2020Assignee: Everspin Technologies, Inc.Inventors: Jijun Sun, Sanjeev Aggarwal, Han-Jong Chia, Jon M. Slaughter, Renu Whig
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Patent number: 10622554Abstract: A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.Type: GrantFiled: May 22, 2019Date of Patent: April 14, 2020Assignee: Everspin Technologies, Inc.Inventors: Renu Whig, Jijun Sun, Nicholas Rizzo, Jon Slaughter, Dimitri Houssameddine, Frederick Mancoff
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Patent number: 10622552Abstract: A magnetoresistive stack includes a seed region formed above a base region, a fixed magnetic region formed above the seed region and an intermediate region positioned between the fixed magnetic region and a free magnetic region. The base region may be formed of a material having a lower standard free energy of oxidation than iron.Type: GrantFiled: November 2, 2018Date of Patent: April 14, 2020Assignee: Everspin Technologies, Inc.Inventors: Sumio Ikegawa, Jon Slaughter, Renu Whig
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Publication number: 20200091420Abstract: Methods and apparatus for forming a magnetic tunnel element are provided herein. A method of forming a magnetic tunnel element includes: depositing a magnetic layer atop a cobalt-chromium seed layer; and depositing a tunnel layer atop the magnetic layer to form a magnetic tunnel element, wherein the magnetic tunnel element has a TMR greater than 100. For example, a cobalt/platinum material or one or more layers thereof may be deposited directly atop a cobalt-chromium seed layer to produce improved devices.Type: ApplicationFiled: September 13, 2019Publication date: March 19, 2020Inventors: CHI CHING, RENU WHIG, RONGJUN WANG
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Publication number: 20200043979Abstract: A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/?10%) and less than or equal to 60 Angstroms (+/?10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/?10%) or 30-50 atomic percent (+/?10%).Type: ApplicationFiled: October 15, 2019Publication date: February 6, 2020Applicant: Everspin Technologies, Inc.Inventors: Jijun SUN, Sanjeev AGGARWAL, Han-Jong CHIA, Jon M. SLAUGHTER, Renu WHIG
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Patent number: 10516103Abstract: A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.Type: GrantFiled: August 27, 2019Date of Patent: December 24, 2019Assignee: Everspin Technologies, Inc.Inventors: Renu Whig, Jijun Sun, Nicholas Rizzo, Jon Slaughter, Dimitri Houssameddine, Frederick Mancoff
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Publication number: 20190386212Abstract: A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.Type: ApplicationFiled: August 27, 2019Publication date: December 19, 2019Applicant: Everspin Technologies, Inc.Inventors: Renu WHIG, Jijun SUN, Nicholas RIZZO, Jon SLAUGHTER, Dimitri HOUSSAMEDDINE, Frederick MANCOFF
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Patent number: 10483320Abstract: A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/?10%) and less than or equal to 60 Angstroms (+/?10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/?10%) or 30-50 atomic percent (+/?10%).Type: GrantFiled: November 19, 2018Date of Patent: November 19, 2019Assignee: Everspin Technologies, Inc.Inventors: Jijun Sun, Sanjeev Aggarwal, Han-Jong Chia, Jon M. Slaughter, Renu Whig
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Publication number: 20190280198Abstract: A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.Type: ApplicationFiled: May 22, 2019Publication date: September 12, 2019Applicant: EVERSPIN TECHNOLOGIES, INC.Inventors: Renu WHIG, Jijun SUN, Nicholas RIZZO, Jon SLAUGHTER, Dimitri HOUSSAMEDDINE, Frederick MANCOFF
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Publication number: 20190221737Abstract: A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a āZā axis magnetic field onto sensors orientated in the XY plane.Type: ApplicationFiled: March 21, 2019Publication date: July 18, 2019Applicant: EVERSPIN TECHNOLOGIES, INC.Inventors: Renu WHIG, Phillip MATHER, Kenneth SMITH, Sanjeev AGGARWAL, Jon SLAUGHTER, Nicholas RIZZO
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Patent number: 10347828Abstract: A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.Type: GrantFiled: December 21, 2018Date of Patent: July 9, 2019Assignee: Everspin Technologies, Inc.Inventors: Renu Whig, Jijun Sun, Nicholas Rizzo, Jon Slaughter, Dimitri Houssameddine, Frederick Mancoff
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Publication number: 20190165253Abstract: A magnetically free region of magnetoresistive device includes at least a first ferromagnetic region and a second ferromagnetic region separated by a non-magnetic insertion region. At least one of the first ferromagnetic region and the second ferromagnetic region may include at least a boron-rich ferromagnetic layer positioned proximate a boron-free ferromagnetic layer.Type: ApplicationFiled: November 13, 2018Publication date: May 30, 2019Applicant: Everspin Technologies, Inc.Inventors: Jijun SUN, Jon SLAUGHTER, Renu WHIG
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Publication number: 20190131519Abstract: A magnetoresistive stack includes a seed region formed above a base region, a fixed magnetic region formed above the seed region and an intermediate region positioned between the fixed magnetic region and a free magnetic region. The base region may be formed of a material having a lower standard free energy of oxidation than iron.Type: ApplicationFiled: November 2, 2018Publication date: May 2, 2019Applicant: Everspin Technologies, Inc.Inventors: Sumio Ikegawa, Jon Slaughter, Renu Whig
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Patent number: 10276789Abstract: A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a āZā axis magnetic field onto sensors orientated in the XY plane.Type: GrantFiled: January 3, 2018Date of Patent: April 30, 2019Assignee: Everspin Technologies, Inc.Inventors: Renu Whig, Phillip Mather, Kenneth Smith, Sanjeev Aggarwal, Jon Slaughter, Nicholas Rizzo
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Publication number: 20190123266Abstract: A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (i) a first layer of one or more ferromagnetic materials, including cobalt, (ii) a multi-layer region including a plurality of layers of ferromagnetic materials, wherein the plurality of layers of ferromagnetic materials include a layer of one or more ferromagnetic materials including cobalt, and (iii) an anti-ferromagnetic coupling layer disposed between the first layer and the multi-layer region. The free magnetic region may include a circular shape, the one or more ferromagnetic materials of the first layer may include cobalt, iron and boron, and the dielectric layer may be disposed on the first layer.Type: ApplicationFiled: December 19, 2018Publication date: April 25, 2019Applicant: Everspin Technologies, Inc.Inventors: Srinivas V. PIETAMBARAM, Bengt J. AKERMAN, Renu WHIG, Jason A. JANESKY, Nicholas D. RIZZO, Jon M. SLAUGHTER
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Publication number: 20190123098Abstract: A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/?10%) and less than or equal to 60 Angstroms (+/?10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/?10%) or 30-50 atomic percent (+/?10%).Type: ApplicationFiled: November 19, 2018Publication date: April 25, 2019Applicant: Everspin Technologies, Inc.Inventors: Jijun SUN, Sanjeev Aggarwal, Han-Jong Chia, Jon M. Slaughter, Renu Whig
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Publication number: 20190123268Abstract: A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.Type: ApplicationFiled: December 21, 2018Publication date: April 25, 2019Applicant: EVERSPIN TECHNOLOGIES, INC.Inventors: Renu WHIG, Jijun SUN, Nicholas RIZZO, Jon SLAUGHTER, Dimitri HOUSSAMEDDINE, Frederick MANCOFF
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Patent number: 10199574Abstract: A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.Type: GrantFiled: March 30, 2018Date of Patent: February 5, 2019Assignee: Everspin Technologies, Inc.Inventors: Renu Whig, Jijun Sun, Nicholas Rizzo, Jon Slaughter, Dimitri Houssameddine, Frederick Mancoff