Abstract: A semiconductor device has a first semiconductor die with a shielding layer formed over its back surface. The first semiconductor die is mounted to a carrier. A first insulating layer is formed over the shielding layer. A second semiconductor die is mounted over the first semiconductor die separated by the shielding layer and first insulating layer. A second insulating layer is deposited over the first and second semiconductor die. A first interconnect structure is formed over the second semiconductor die and second insulating layer. A second interconnect structure is formed over the first semiconductor die and second insulating layer. The shielding layer is electrically connected to a low-impedance ground point through a bond wire, RDL, or TSV. The second semiconductor die may also have a shielding layer formed on its back surface. The semiconductor die are bonded through the metal-to-metal shielding layers.

Abstract: A semiconductor device has a plurality of first semiconductor die mounted over an interface layer formed over a temporary carrier. An encapsulant is deposited over the first die and carrier. A flat shielding layer is formed over the encapsulant. A channel is formed through the shielding layer and encapsulant down to the interface layer. A conductive material is deposited in the channel and electrically connected to the shielding layer. The interface layer and carrier are removed. An interconnect structure is formed over conductive material, encapsulant, and first die. The conductive material is electrically connected through the interconnect structure to a ground point. The conductive material is singulated to separate the first die. A second semiconductor die can be mounted over the first die such that the shielding layer covers the second die and the conductive material surrounds the second die or the first and second die.

Abstract: A semiconductor device has conductive pillars formed over a carrier. A first semiconductor die is mounted over the carrier between the conductive pillars. An encapsulant is deposited over the first semiconductor die and carrier and around the conductive pillars. A recess is formed in a first surface of the encapsulant over the first semiconductor die. The recess has sloped or stepped sides. A first interconnect structure is formed over the first surface of the encapsulant. The first interconnect structure follows a contour of the recess in the encapsulant. The carrier is removed. A second interconnect structure is formed over a second surface of the encapsulant and first semiconductor die. The first and second interconnect structures are electrically connected to the conductive pillars. A second semiconductor die is mounted in the recess. A third semiconductor die is mounted over the recess and second semiconductor die.

Abstract: A semiconductor device has a thermally-conductive frame and interconnect structure formed over the frame. The interconnect structure has an electrical conduction path and thermal conduction path. A first semiconductor die is mounted to the electrical conduction path and thermal conduction path of the interconnect structure. A portion of a back surface of the first die is removed by grinding. An EMI shielding layer can be formed over the first die. The first die can be mounted in a recess of the thermally-conductive frame. An opening is formed in the thermally-conductive frame extending to the electrical conduction path of the interconnect structure. A second semiconductor die is mounted over the thermally-conductive frame opposite the first die. The second die is electrically connected to the interconnect structure using a bump disposed in the opening of the thermally-conductive frame.

Abstract: A semiconductor device has a plurality of first semiconductor die mounted over an interface layer formed over a temporary carrier. An encapsulant is deposited over the first die and carrier. A flat shielding layer is formed over the encapsulant. A channel is formed through the shielding layer and encapsulant down to the interface layer. A conductive material is deposited in the channel and electrically connected to the shielding layer. The interface layer and carrier are removed. An interconnect structure is formed over conductive material, encapsulant, and first die. The conductive material is electrically connected through the interconnect structure to a ground point. The conductive material is singulated to separate the first die. A second semiconductor die can be mounted over the first die such that the shielding layer covers the second die and the conductive material surrounds the second die or the first and second die.

Abstract: A semiconductor device has a base substrate with recesses formed in a first surface of the base substrate. A first conductive layer is formed over the first surface and into the recesses. A second conductive layer is formed over a second surface of the base substrate. A first semiconductor die is mounted to the base substrate with bumps partially disposed within the recesses over the first conductive layer. A second semiconductor die is mounted to the first semiconductor die. Bond wires are formed between the second semiconductor die and the first conductive layer over the first surface of the base substrate. An encapsulant is deposited over the first and second semiconductor die and base substrate. A portion of the base substrate is removed from the second surface between the second conductive layer down to the recesses to form electrically isolated base leads for the bumps and bond wires.

Abstract: A semiconductor device has a first thermally conductive layer formed over a first surface of a semiconductor die. A second surface of the semiconductor die is mounted to a sacrificial carrier. An encapsulant is deposited over the first thermally conductive layer and sacrificial carrier. The encapsulant is planarized to expose the first thermally conductive layer. A first insulating layer is formed over the second surface of the semiconductor die and a first surface of the encapsulant. A portion of the first insulating layer over the second surface of the semiconductor die is removed. A second thermally conductive layer is formed over the second surface of the semiconductor die within the removed portion of the first insulating layer. An electrically conductive layer is formed within the insulating layer around the second thermally conductive layer. A heat sink can be mounted over the first thermally conductive layer.

Abstract: A semiconductor device has a first interconnect structure. A first semiconductor die has an active surface oriented towards and mounted to a first surface of the first interconnect structure. A first encapsulant is deposited over the first interconnect structure and first semiconductor die. A second semiconductor die has an active surface oriented towards and mounted to a second surface of the first interconnect structure opposite the first surface. A plurality of first conductive pillars is formed over the second surface of the first interconnect structure and around the second semiconductor die. A second encapsulant is deposited over the second semiconductor die and around the plurality of first conductive pillars. A second interconnect structure including a conductive layer and bumps are formed over the second encapsulant and electrically connect to the plurality of first conductive pillars and the first and second semiconductor die.

Abstract: A semiconductor device has a first semiconductor die with a sloped side surface. The first semiconductor die is mounted to a temporary carrier. An RDL extends from a back surface of the first semiconductor die along the sloped side surface of the first semiconductor die to the carrier. An encapsulant is deposited over the carrier and a portion of the RDL along the sloped side surface. The back surface of the first semiconductor die and a portion of the RDL is devoid of the encapsulant. The temporary carrier is removed. An interconnect structure is formed over the encapsulant and exposed active surface of the first semiconductor die. The RDL is electrically connected to the interconnect structure. A second semiconductor die is mounted over the back surface of the first semiconductor die. The second semiconductor die has bumps electrically connected to the RDL.

Abstract: A semiconductor wafer contains a plurality of semiconductor die separated by a non-active area of the semiconductor wafer. A plurality of contact pads is formed on an active surface of the semiconductor die. A first insulating layer is formed over the semiconductor wafer. A portion of the first insulating layer is removed to expose the contact pads on the semiconductor die. An opening is formed partially through the semiconductor wafer in the active surface of the semiconductor die or in the non-active area of the semiconductor wafer. A second insulating layer is formed in the opening in the semiconductor wafer. A shielding layer is formed over the active surface. The shielding layer extends into the opening of the semiconductor wafer to form a conductive via. A portion of a back surface of the semiconductor wafer is removed to singulate the semiconductor die.

Abstract: A semiconductor device has a plurality of bumps formed over a carrier. A semiconductor die is mounted to the carrier between the bumps. A penetrable film encapsulant layer having a base layer, first adhesive layer, and second adhesive layer is placed over the semiconductor die and bumps. The penetrable film encapsulant layer is pressed over the semiconductor die and bumps to embed the semiconductor die and bumps within the first and second adhesive layers. The first adhesive layer and second adhesive layer are separated to remove the base layer and first adhesive layer and leave the second adhesive layer around the semiconductor die and bumps. The bumps are exposed from the second adhesive layer. The carrier is removed. An interconnect structure is formed over the semiconductor die and second adhesive layer. A conductive layer is formed over the second adhesive layer electrically connected to the bumps.

Abstract: A semiconductor wafer contains a plurality of semiconductor die with bumps formed over contact pads on an active surface of the semiconductor die. A b-stage conductive polymer is deposited over the contact pads on the semiconductor wafer. The semiconductor wafer is singulated to separate the die. An insulating layer is formed over a carrier with openings formed in the insulating layer. The die is mounted to the carrier with the conductive polymer disposed in the openings of the insulating layer. The conductive polymer is heated to a glass transition temperature to liquefy the conductive polymer to an electrically conductive state. An encapsulant is deposited over the die and insulating layer. The carrier is removed to expose the conductive polymer. An interconnect structure is formed over the die, encapsulant, and conductive polymer. The interconnect structure is electrically connected through the conductive polymer to the contact pads on the die.

Abstract: A semiconductor device has a first substrate with a plurality of first conductive vias formed partially through the first substrate. A first semiconductor die is mounted over the first substrate and electrically connected to the first conductive vias. A plurality of bumps is formed over the first substrate. A second substrate has a plurality of second conductive vias formed partially through the second substrate. A penetrable encapsulant is deposited over the second substrate. The second substrate is mounted over the first substrate to embed the first semiconductor die and interconnect structure in the penetrable encapsulant. The encapsulant can be injected between the first and second substrates. A portion of the first substrate is removed to expose the first conductive vias. A portion of the second substrate is removed to expose the second conductive vias. A second semiconductor die is mounted over the second substrate.

Abstract: A semiconductor device is made by providing a temporary carrier and providing a semiconductor die having a plurality of bumps formed on its active surface. An adhesive material is deposited as a plurality of islands or bumps on the carrier or active surface of the semiconductor die. The adhesive layer can also be deposited as a continuous layer over the carrier or active surface of the die. The semiconductor die is mounted to the carrier. An encapsulant is deposited over the die and carrier. The adhesive material holds the semiconductor die in place to the carrier while depositing the encapsulant. An interconnect structure is formed over the active surface of the die. The interconnect structure is electrically connected to the bumps of the semiconductor die. The adhesive material can be removed prior to forming the interconnect structure, or the interconnect structure can be formed over the adhesive material.

Abstract: A semiconductor device includes a pre-fabricated shielding frame mounted over a sacrificial substrate and semiconductor die. An encapsulant is deposited through an opening in the shielding frame around the semiconductor die. A first portion of the shielding frame to expose the encapsulant. Removing the first portion also leaves a second portion of the shielding frame over the semiconductor die as shielding from interference. A third portion of the shielding frame around the semiconductor die provides a conductive pillar. A first interconnect structure is formed over a first side of the encapsulant, shielding frame, and semiconductor die. The sacrificial substrate is removed. A second interconnect structure over the semiconductor die and a second side of the encapsulant. The shielding frame can be connected to low-impedance ground point through the interconnect structures or TSV in the semiconductor die to isolate the die from EMI and RFI, and other inter-device interference.

Abstract: A semiconductor wafer contains a plurality of semiconductor die each having a plurality of contact pads. A sacrificial adhesive is deposited over the contact pads. Alternatively, the sacrificial adhesive is deposited over the carrier. An underfill material can be formed between the contact pads. The semiconductor wafer is singulated to separate the semiconductor die. The semiconductor die is mounted to a temporary carrier such that the sacrificial adhesive is disposed between the contact pads and temporary carrier. An encapsulant is deposited over the semiconductor die and carrier. The carrier and sacrificial adhesive is removed to leave a via over the contact pads. An interconnect structure is formed over the encapsulant. The interconnect structure includes a conductive layer which extends into the via for electrical connection to the contact pads. The semiconductor die is offset from the interconnect structure by a height of the sacrificial adhesive.

Abstract: A semiconductor device is made by creating a gap between semiconductor die on a wafer. An insulating material is deposited in the gap. A first portion of the insulating material is removed from a first side of the semiconductor wafer to form a first notch. The first notch is less than a thickness of the semiconductor die. A conductive material is deposited into the first notch to form a first portion of the conductive via within the gap. A second portion of the insulating material is removed from a second side of the semiconductor wafer to form a second notch. The second notch extends through the insulating material to the first notch. A conductive material is deposited into the second notch to form a second portion of the conductive via within the gap. The semiconductor wafer is singulated through the gap to separate the semiconductor die.

Abstract: A semiconductor substrate has a plurality of different size recesses formed in the substrate to provide a stepped interposer. A conductive via can be formed through the stepped interposer. An insulating layer follows a contour of the stepped interposer. A conductive layer is formed over the insulating layer following the contour of the stepped interposer. A first semiconductor die is partially disposed in a first recess and electrically connected to the conductive layer. A second semiconductor die is partially disposed in a second recess and electrically connected to the conductive layer. The first semiconductor die is electrically connected to the second semiconductor die through the conductive layer. The first and second semiconductor die can be flipchip type semiconductor die. An encapsulant is deposited over the first and second semiconductor die. A portion of the stepped interposer can be removed to reduce thickness.

Abstract: A semiconductor device is made by providing a first semiconductor wafer having semiconductor die. A gap is made between the semiconductor die. An insulating material is deposited in the gap. A portion of the insulating material is removed to form a first through hole via (THV). A conductive lining is conformally deposited in the first THV. A solder material is disposed above the conductive lining of the first THV. A second semiconductor wafer having semiconductor die is disposed over the first wafer. A second THV is formed in a gap between the die of the second wafer. A conductive lining is conformally deposited in the second THV. A solder material is disposed above the second THV. The second THV is aligned to the first THV. The solder material is reflowed to form the conductive vias within the gap. The gap is singulated to separate the semiconductor die.

Abstract: In a semiconductor device, a plurality of conductive pillars is formed over a temporary carrier. A dual-active sided semiconductor die is mounted over the carrier between the conductive pillars. The semiconductor die has first and second opposing active surfaces with first contact pads on the first active surface and second contact pads on the second active surface. An encapsulant is deposited over the semiconductor die and temporary carrier. A first interconnect structure is formed over a first surface of the encapsulant. The first interconnect structure is electrically connected to the conductive pillars and first contact pads of the dual-active sided semiconductor die. The temporary carrier is removed. A second interconnect structure is formed over a second surface of the encapsulant opposite the first surface of the encapsulant. The second interconnect structure is electrically connected to the conductive pillars and second contact pads of the dual-active sided semiconductor die.