Patents by Inventor Richard A. Blanchard

Richard A. Blanchard has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Bidirectional two-base bipolar junction transistor devices, operation, circuits, and systems with diode-mode turn-on and collector-side base driven
    Patent number: 9231582
    Abstract: Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.
    Type: Grant
    Filed: July 6, 2015
    Date of Patent: January 5, 2016
    Assignee: IDEAL POWER INC.
    Inventors: William C. Alexander, Richard A. Blanchard
  • Diode for a Printable Composition
    Publication number: 20150380608
    Abstract: An exemplary printable composition of a liquid or gel suspension of diodes comprises a plurality of diodes, a first solvent and/or a viscosity modifier. An exemplary diode comprises: a light emitting or absorbing region having a diameter between about 20 and 30 microns and a height between about 2.5 to 7 microns; a first terminal coupled to the light emitting region on a first side, the first terminal having a height between about 1 to 6 microns; and a second terminal coupled to the light emitting region on a second side opposite the first side, the second terminal having a height between about 1 to 6 microns.
    Type: Application
    Filed: September 2, 2015
    Publication date: December 31, 2015
    Inventors: Mark David Lowenthal, William Johnstone Ray, Neil O. Shotton, Richard A. Blanchard, Brad Oraw
  • THIN FLEXIBLE LED LIGHT SHEET APPLICATIONS
    Publication number: 20150360606
    Abstract: Various applications and customizations of a thin flexible LED light sheet are described. Microscopic LED dice are printed on a thin substrate, and the LEDs are sandwiched between two conductor layers to connect the LEDs in parallel. The conductor layer on the light emitting side is transparent. In one embodiment, the light sheet backlights all or a portion of a translucent ceiling material of an automobile to cause the backlit portion of the ceiling material to illuminate the automobile's interior with diffused lighting. This greatly reduces glare for the driver. The emitted color of the light sheet may be adjusted to compensate for the color component added by the ceiling material color. Four light sheets may be connected in series to drop approximately 12 volts. The light sheet color may be controllable by using adjustable RGB color components, either with phosphors or different LED colors.
    Type: Application
    Filed: June 12, 2014
    Publication date: December 17, 2015
    Inventors: Travis Thompson, Bradley S. Oraw, Alexander Ray, Andrew Dennis, Mark D. Lowenthal, Sara Behm, William J. Ray, Richard A. Blanchard, Neil O. Shotton
  • Bidirectional bipolar junction transistor operation, circuits, and systems with two base junctions clamped by default
    Patent number: 9209713
    Abstract: Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.
    Type: Grant
    Filed: June 12, 2015
    Date of Patent: December 8, 2015
    Assignee: Ideal Power Inc.
    Inventors: William C. Alexander, Richard A. Blanchard
  • Bidirectional bipolar junction transistor operation, circuits, and systems with two base junctions clamped by default
    Patent number: 9209798
    Abstract: Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.
    Type: Grant
    Filed: May 18, 2015
    Date of Patent: December 8, 2015
    Assignee: IDEAL POWER INC.
    Inventors: William C. Alexander, Richard A. Blanchard
  • Diode for a Printable Composition
    Publication number: 20150349206
    Abstract: An exemplary printable composition of a liquid or gel suspension of diodes comprises a plurality of diodes, a first solvent and/or a viscosity modifier. An exemplary diode comprises: a light emitting or absorbing region having a diameter between about 20 and 30 microns and a height between 2.5 to 7 microns; a plurality of first terminals spaced apart and coupled to the light emitting region peripherally on a first side, each first terminal of the plurality of first terminals having a height between about 0.5 to 2 microns; and one second terminal coupled centrally to a mesa region of the light emitting region on the first side, the second terminal having a height between 1 to 8 microns.
    Type: Application
    Filed: August 7, 2015
    Publication date: December 3, 2015
    Inventors: Mark David Lowenthal, William Johnstone Ray, Neil O. Shotton, Richard A. Blanchard, Brad Oraw
  • INSULATED GATE TURN-OFF DEVICE WITH TURN-OFF TRANSISTOR
    Publication number: 20150349104
    Abstract: An insulated gate turn-off (IGTO) device, formed as a die, has a layered structure including a p+ layer (e.g., a substrate), an n? epi layer, a p-well, vertical insulated gate regions formed in the p-well, and n+ regions between the gate regions, so that vertical NPN and PNP transistors are formed. The device is formed of a matrix of cells. To turn the device on, a positive voltage is applied to the gate, referenced to the cathode. The cells further contain a vertical p-channel MOSFET, for shorting the base of the NPN transistor to its emitter, to turn the NPN transistor off when the p-channel MOSFET is turned on by a slight negative voltage applied to the gate. This allows the IGTO device to be more easily turned off while in a latch-up condition, when the device is acting like a thyristor.
    Type: Application
    Filed: April 30, 2015
    Publication date: December 3, 2015
    Inventors: Vladimir Rodov, Hidenori Akiyama, Richard A. Blanchard, Woytek Tworzydlo
  • Bidirectional two-base bipolar junction transistor operation, circuits, and systems with diode-mode turn-on
    Patent number: 9203400
    Abstract: Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.
    Type: Grant
    Filed: June 19, 2015
    Date of Patent: December 1, 2015
    Assignee: Ideal Power Inc.
    Inventors: William C. Alexander, Richard A. Blanchard
  • Bidirectional two-base bipolar junction transistor operation, circuits, and systems with double base short at initial turn-off
    Patent number: 9203401
    Abstract: Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.
    Type: Grant
    Filed: June 30, 2015
    Date of Patent: December 1, 2015
    Assignee: Ideal Power Inc.
    Inventors: William C. Alexander, Richard A. Blanchard
  • LED lighting apparatus formed by a printable composition of a liquid or gel suspension of diodes and methods of using same
    Patent number: 9200758
    Abstract: An exemplary printable composition of a liquid or gel suspension of diodes comprises a plurality of diodes, a first solvent and/or a viscosity modifier. An exemplary apparatus comprises: a plurality of diodes; at least a trace amount of a first solvent; and a polymeric or resin film at least partially surrounding each diode of the plurality of diodes. Various exemplary diodes have a lateral dimension between about 10 to 50 microns and about 5 to 25 microns in height. Other embodiments may also include a plurality of substantially chemically inert particles having a range of sizes between about 10 to about 50 microns.
    Type: Grant
    Filed: April 14, 2015
    Date of Patent: December 1, 2015
    Assignee: NthDegree Technologies Worldwide Inc
    Inventors: Mark David Lowenthal, William Johnstone Ray, Neil O. Shotton, Richard A. Blanchard, Brad Oraw, Mark Allan Lewandowski, Jeffrey Baldridge, Eric Anthony Perozziello
  • LATERAL TRANSISTORS AND METHODS WITH LOW-VOLTAGE-DROP SHUNT TO BODY DIODE
    Publication number: 20150340360
    Abstract: Methods and systems for power semiconductor devices integrating multiple quasi-vertical transistors on a single chip. Multiple power transistors (or active regions) are paralleled, but one transistor has a lower threshold voltage. This reduces the voltage drop when the transistor is forward-biased. In an alternative embodiment, the power device with lower threshold voltage is simply connected as a depletion diode, to thereby shunt the body diodes of the active transistors, without affecting turn-on and ON-state behavior.
    Type: Application
    Filed: April 23, 2015
    Publication date: November 26, 2015
    Inventors: Mohamed N. Darwish, Jun Zeng, Richard A. Blanchard
  • Bidirectional two-base bipolar junction transistor operation, circuits, and systems with collector-side base driven
    Patent number: 9190894
    Abstract: Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.
    Type: Grant
    Filed: June 10, 2015
    Date of Patent: November 17, 2015
    Assignee: Ideal Power Inc.
    Inventors: William C. Alexander, Richard A. Blanchard
  • Bidirectional Two-Base Bipolar Junction Transistor Devices, Operation, Circuits, and Systems with Collector-Side Base Driven, Diode-Mode Turn-On, Double Base Short at Initial Turn-Off, and Two Base Junctions Clamped By Default
    Publication number: 20150311777
    Abstract: Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.
    Type: Application
    Filed: July 6, 2015
    Publication date: October 29, 2015
    Applicant: IDEAL POWER INC.
    Inventors: William C. Alexander, Richard A. Blanchard
  • Bidirectional Two-Base Bipolar Junction Transistor Operation, Circuits, and Systems with Double Base Short at Initial Turn-Off
    Publication number: 20150303915
    Abstract: Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.
    Type: Application
    Filed: June 30, 2015
    Publication date: October 22, 2015
    Applicant: Ideal Power Inc.
    Inventors: William C. Alexander, Richard A. Blanchard
  • Apparatus with Light Emitting or Absorbing Diodes
    Publication number: 20150300575
    Abstract: An exemplary printable composition of a liquid or gel suspension of diodes comprises a plurality of diodes, a first solvent and/or a viscosity modifier. An exemplary apparatus comprises: a plurality of diodes; at least a trace amount of a first solvent; and a polymeric or resin film at least partially surrounding each diode of the plurality of diodes. Various exemplary diodes have a lateral dimension between about 10 to 50 microns and about 5 to 25 microns in height. Other embodiments may also include a plurality of substantially chemically inert particles having a range of sizes between about 10 to about 50 microns.
    Type: Application
    Filed: May 29, 2015
    Publication date: October 22, 2015
    Inventors: Mark David Lowenthal, William Johnstone Ray, Neil O. Shotton, Richard A. Blanchard, Brad Oraw, Mark Allan Lewandowski, Jeffrey Baldridge, Eric Anthony Perozziello
  • Bidirectional Two-Base Bipolar Junction Transistor Operation, Circuits, and Systems with Diode-Mode Turn-On
    Publication number: 20150288358
    Abstract: Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.
    Type: Application
    Filed: June 19, 2015
    Publication date: October 8, 2015
    Applicant: Ideal Power Inc.
    Inventors: William C. Alexander, Richard A. Blanchard
  • Bidirectional Bipolar Junction Transistor Operation, Circuits, and Systems with Two Base Junctions Clamped By Default
    Publication number: 20150280613
    Abstract: Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.
    Type: Application
    Filed: June 12, 2015
    Publication date: October 1, 2015
    Applicant: Ideal Power Inc.
    Inventors: William C. Alexander, Richard A. Blanchard
  • Apparatus with Light Emitting or Absorbing Diodes
    Publication number: 20150276194
    Abstract: An exemplary printable composition of a liquid or gel suspension of diodes comprises a plurality of diodes, a first solvent and/or a viscosity modifier. An exemplary apparatus comprises: a plurality of diodes; at least a trace amount of a first solvent; and a polymeric or resin film at least partially surrounding each diode of the plurality of diodes. Various exemplary diodes have a lateral dimension between about 10 to 50 microns and about 5 to 25 microns in height. Other embodiments may also include a plurality of substantially chemically inert particles having a range of sizes between about 10 to about 50 microns.
    Type: Application
    Filed: June 7, 2015
    Publication date: October 1, 2015
    Inventors: Mark David Lowenthal, William Johnstone Ray, Neil O. Shotton, Richard A. Blanchard, Brad Oraw, Mark Allan Lewandowski, Jeffrey Baldridge, Eric Anthony Perozziello
  • Bidirectional Bipolar Junction Transistor Operation, Circuits, and Systems with Two Base Junctions Clamped By Default
    Publication number: 20150270837
    Abstract: Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.
    Type: Application
    Filed: May 18, 2015
    Publication date: September 24, 2015
    Applicant: IDEAL POWER INC.
    Inventors: William C. Alexander, Richard A. Blanchard
  • Bidirectional Two-Base Bipolar Junction Transistor Operation, Circuits, and Systems with Collector-Side Base Driven
    Publication number: 20150270771
    Abstract: Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.
    Type: Application
    Filed: June 10, 2015
    Publication date: September 24, 2015
    Applicant: Ideal Power Inc.
    Inventors: William C. Alexander, Richard A. Blanchard