Patents by Inventor Richard A. Gottscho

Richard A. Gottscho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9449793
    Abstract: A plasma source includes a ring plasma chamber, a primary winding around an exterior of the ring plasma chamber, multiple ferrites, wherein the ring plasma chamber passes through each of the ferrites and multiple plasma chamber outlets coupling the plasma chamber to a process chamber. Each one of the plasma chamber outlets having a respective plasma restriction. A system and method for generating a plasma are also described.
    Type: Grant
    Filed: August 6, 2010
    Date of Patent: September 20, 2016
    Assignee: Lam Research Corporation
    Inventors: Ali Shajii, Richard Gottscho, Souheil Benzerrouk, Andrew Cowe, Siddharth P. Nagarkatti, William R. Entley
  • Publication number: 20160042945
    Abstract: A method includes depositing a film solution onto a patterned feature of a semiconductor substrate after wet cleaning the semiconductor substrate and without performing a drying step after the wet cleaning. The film solution includes a dielectric film precursor or a dielectric film precursor and at least one of a reactant, a solvent, a surfactant and a carrier fluid. The method includes baking at least one of solvent and unreacted solution out of a film formed by the film solution by heating the substrate to a baking temperature. The method includes curing the substrate.
    Type: Application
    Filed: August 11, 2014
    Publication date: February 11, 2016
    Inventors: Ratchana Limary, Nerissa Draeger, Diane Hymes, Richard Gottscho
  • Patent number: 9155181
    Abstract: A plasma source includes a ring plasma chamber, a primary winding around an exterior of the ring plasma chamber and multiple ferrites, wherein the ring plasma chamber passes through each of the ferrites. A system and method for generating a plasma are also described.
    Type: Grant
    Filed: August 6, 2010
    Date of Patent: October 6, 2015
    Assignee: Lam Research Corporation
    Inventors: Ali Shajii, Richard Gottscho, Souheil Benzerrouk, Andrew Cowe, Siddharth P. Nagarkatti, William R. Entley
  • Patent number: 9111729
    Abstract: A plasma etch processing tool is disclosed. The plasma etch processing tool, comprising a substrate support for supporting a substrate having a substrate surface area, a processing head including a plasma microchamber having an open side that is oriented over the substrate support, the open side of the plasma microchamber having a process area that is less than the substrate surface area, a sealing structure defined between the substrate support and the processing head and a power supply connected to the plasma microchamber and the substrate support. A method for performing a plasma etch is also disclosed.
    Type: Grant
    Filed: December 1, 2010
    Date of Patent: August 18, 2015
    Assignee: Lam Research Corporation
    Inventors: Richard Gottscho, Rajinder Dhindsa, Mukund Srinivasan
  • Publication number: 20150221519
    Abstract: Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.
    Type: Application
    Filed: January 30, 2015
    Publication date: August 6, 2015
    Inventors: Jeffrey Marks, George Andrew Antonelli, Richard A. Gottscho, Dennis M. Hausmann, Adrien LaVoie, Thomas Joseph Knisley, Sirish K. Reddy, Bhadri N. Varadarajan, Artur Kolics
  • Patent number: 8999104
    Abstract: A plasma source includes multiple ring plasma chambers, multiple primary windings, multiple ferrites and a control system. Each one of the primary windings is wrapped around an exterior one of the ring plasma chambers. Each one of the plurality of the ring plasma chamber passes through a respective portion of the plurality of ferrites. The control system is coupled to each of the ring plasma chambers. A system and method for generating and using a plasma are also described.
    Type: Grant
    Filed: August 6, 2010
    Date of Patent: April 7, 2015
    Assignee: Lam Research Corporation
    Inventors: Ali Shajii, Richard Gottscho, Souheil Benzerrouk, Andrew Cowe, Siddharth P. Nagarkatti, William R. Entley
  • Publication number: 20150044878
    Abstract: A semiconductor substrate processing system includes a chamber that includes a processing region and a substrate support. The system includes a top plate assembly disposed within the chamber above the substrate support. The top plate assembly includes first and second sets of plasma microchambers each formed into the lower surface of the top plate assembly. A first network of gas supply channels are formed through the top plate assembly to flow a first process gas to the first set of plasma microchambers to be transformed into a first plasma. A set of exhaust channels are formed through the top plate assembly. The second set of plasma microchambers are formed inside the set of exhaust channels. A second network of gas supply channels are formed through the top plate assembly to flow a second process gas to the second set of plasma microchambers to be transformed into a second plasma.
    Type: Application
    Filed: October 28, 2014
    Publication date: February 12, 2015
    Inventors: John Patrick Holland, Peter L.G. Ventzek, Harmeet Singh, Richard Gottscho
  • Patent number: 8900403
    Abstract: A semiconductor substrate processing system includes a chamber that includes a processing region and a substrate support. The system includes a top plate assembly disposed within the chamber above the substrate support. The top plate assembly includes first and second sets of plasma microchambers each formed into the lower surface of the top plate assembly. A first network of gas supply channels are formed through the top plate assembly to flow a first process gas to the first set of plasma microchambers to be transformed into a first plasma. A set of exhaust channels are formed through the top plate assembly. The second set of plasma microchambers are formed inside the set of exhaust channels. A second network of gas supply channels are formed through the top plate assembly to flow a second process gas to the second set of plasma microchambers to be transformed into a second plasma.
    Type: Grant
    Filed: May 10, 2011
    Date of Patent: December 2, 2014
    Assignee: Lam Research Corporation
    Inventors: John Patrick Holland, Peter L. G. Ventzek, Harmeet Singh, Richard Gottscho
  • Patent number: 8900402
    Abstract: A semiconductor substrate processing system includes a substrate support defined to support a substrate in exposure to a processing region. The system also includes a first plasma chamber defined to generate a first plasma and supply reactive constituents of the first plasma to the processing region. The system also includes a second plasma chamber defined to generate a second plasma and supply reactive constituents of the second plasma to the processing region. The first and second plasma chambers are defined to be independently controlled.
    Type: Grant
    Filed: May 10, 2011
    Date of Patent: December 2, 2014
    Assignee: Lam Research Corporation
    Inventors: John Patrick Holland, Peter L. G. Ventzek, Harmeet Singh, Richard Gottscho
  • Publication number: 20140151333
    Abstract: A plasma deposition chamber is disclosed. A substrate support for supporting a surface to be processed is in the chamber. A processing head including an array of plasma microchambers is also in the chamber. Each of the plasma microchambers includes an open side disposed over at least a first portion of the surface to be processed. The open side has an area less than an entire area of the surface to be processed. A process gas source is coupled to the chamber to provide a process gas the array of plasma microchambers. A radio frequency power supply is connected to at least one electrode of the processing head. The array of plasma microchambers is configured to generate a plasma using the process gas to deposit a layer over the at least first portion of the surface to be processed. A method for performing a plasma deposition is also disclosed.
    Type: Application
    Filed: February 10, 2014
    Publication date: June 5, 2014
    Applicant: Lam Research Corporation
    Inventors: Richard Gottscho, Rajinder Dhindsa, Mukund Srinivasan
  • Publication number: 20140096908
    Abstract: A processing chamber including multiple plasma sources in a process chamber top. Each one of the plasma sources is a ring plasma source including a primary winding and multiple ferrites. A plasma processing system is also described. A method of plasma processing is also described.
    Type: Application
    Filed: October 10, 2012
    Publication date: April 10, 2014
    Applicant: LAM RESEARCH CORPORATION
    Inventors: Ali Shajii, Richard Gottscho, Souheil Benzerrouk, Andrew Cowe, Siddharth P. Nagarkatti, William R. Entley
  • Publication number: 20130025788
    Abstract: A processing chamber including multiple plasma sources in a process chamber top. Each one of the plasma sources is a ring plasma source including a primary winding and multiple ferrites. A plasma processing system is also described. A method of plasma processing is also described.
    Type: Application
    Filed: September 26, 2012
    Publication date: January 31, 2013
    Inventors: Ali Shajii, Richard Gottscho, Souheil Benzerrouk, Andrew Cowe, Siddharth P. Nagarkatti, William Entley
  • Publication number: 20120289054
    Abstract: A semiconductor substrate processing system includes a chamber that includes a processing region and a substrate support. The system includes a top plate assembly disposed within the chamber above the substrate support. The top plate assembly includes first and second sets of plasma microchambers each formed into the lower surface of the top plate assembly. A first network of gas supply channels are formed through the top plate assembly to flow a first process gas to the first set of plasma microchambers to be transformed into a first plasma. A set of exhaust channels are formed through the top plate assembly. The second set of plasma microchambers are formed inside the set of exhaust channels. A second network of gas supply channels are formed through the top plate assembly to flow a second process gas to the second set of plasma microchambers to be transformed into a second plasma.
    Type: Application
    Filed: May 10, 2011
    Publication date: November 15, 2012
    Applicant: Lam Research Corporation
    Inventors: John Patrick Holland, Peter L. G. Ventzek, Harmeet Singh, Richard Gottscho
  • Publication number: 20120289053
    Abstract: A semiconductor substrate processing system includes a substrate support defined to support a substrate in exposure to a processing region. The system also includes a first plasma chamber defined to generate a first plasma and supply reactive constituents of the first plasma to the processing region. The system also includes a second plasma chamber defined to generate a second plasma and supply reactive constituents of the second plasma to the processing region. The first and second plasma chambers are defined to be independently controlled.
    Type: Application
    Filed: May 10, 2011
    Publication date: November 15, 2012
    Applicant: Lam Research Corporation
    Inventors: John Patrick Holland, Peter L.G. Ventzek, Harmeet Singh, Richard Gottscho
  • Publication number: 20120034394
    Abstract: A plasma source includes a ring plasma chamber, a primary winding around an exterior of the ring plasma chamber and multiple ferrites, wherein the ring plasma chamber passes through each of the ferrites. A system and method for generating a plasma are also described.
    Type: Application
    Filed: August 6, 2010
    Publication date: February 9, 2012
    Inventors: Ali Shajii, Richard Gottscho, Souheil Benzerrouk, Andrew Cowe, Siddharth P. Nagarkatti, William R. Entley
  • Publication number: 20120035766
    Abstract: A plasma source includes a ring plasma chamber, a primary winding around an exterior of the ring plasma chamber, multiple ferrites, wherein the ring plasma chamber passes through each of the ferrites and multiple plasma chamber outlets coupling the plasma chamber to a process chamber. Each one of the plasma chamber outlets having a respective plasma restriction. A system and method for generating a plasma are also described.
    Type: Application
    Filed: August 6, 2010
    Publication date: February 9, 2012
    Inventors: Ali Shajii, Richard Gottscho, Souheil Benzerrouk, Andrew Cowe, Siddharth P. Nagarkatti, William R. Entley
  • Publication number: 20120031876
    Abstract: A plasma source includes multiple ring plasma chambers, multiple primary windings, multiple ferrites and a control system. Each one of the primary windings is wrapped around an exterior one of the ring plasma chambers. Each one of the plurality of the ring plasma chamber passes through a respective portion of the plurality of ferrites. The control system is coupled to each of the ring plasma chambers. A system and method for generating and using a plasma are also described.
    Type: Application
    Filed: August 6, 2010
    Publication date: February 9, 2012
    Inventors: Ali Shajii, Richard Gottscho, Souheil Benzerrouk, Andrew Cowe, Siddharth P. Nagarkatti, William R. Entley
  • Publication number: 20110132874
    Abstract: A plasma etch processing tool is disclosed. The plasma etch processing tool, comprising a substrate support for supporting a substrate having a substrate surface area, a processing head including a plasma microchamber having an open side that is oriented over the substrate support, the open side of the plasma microchamber having a process area that is less than the substrate surface area, a sealing structure defined between the substrate support and the processing head and a power supply connected to the plasma microchamber and the substrate support. A method for performing a plasma etch is also disclosed.
    Type: Application
    Filed: December 1, 2010
    Publication date: June 9, 2011
    Inventors: Richard Gottscho, Rajinder Dhindsa, Mukund Srinivasan
  • Patent number: 7282454
    Abstract: A component delivery mechanism for distributing a component inside a process chamber is disclosed. The component is used to process a work piece within the process chamber. The component delivery mechanism includes a plurality of component outputs for outputting the component to a desired region of the process chamber. The component delivery mechanism further includes a spatial distribution switch coupled to the plurality of component outputs. The spatial distribution switch is arranged for directing the component to at least one of the plurality of component outputs. The component delivery mechanism also includes a single component source coupled to the spatial distribution switch. The single component source is arranged for supplying the component to the spatial distribution switch.
    Type: Grant
    Filed: August 15, 2003
    Date of Patent: October 16, 2007
    Assignee: Lam Research Corporation
    Inventors: Richard A. Gottscho, Robert J. Steger
  • Patent number: RE39534
    Abstract: A method and apparatus for calibrating a semi-empirical process simulator used to determine process values in a plasma process for creating a desired surface profile on a process substrate includes providing a test model which captures all mechanisms responsible for profile evolution in terms of a set of unknown surface parameters. A set Sets of test conditions processes is are derived for which the profile evolution is governed by only a limited number of parameters. For each set of test conditions process, model test values are selected and a test substrate is substrates are actually subjected to a the test process processes defined by the test values , thereby creating a test surface profile profiles. The test values are used to generate an approximate profile prediction predictions and are adjusted to minimize the discrepancy between the test surface profile profiles and the approximate profile prediction predictions, thereby providing a final model of the profile evolution in terms of the process values.
    Type: Grant
    Filed: November 22, 2002
    Date of Patent: March 27, 2007
    Assignee: Lam Research Corporation
    Inventors: David Cooperberg, Richard A. Gottscho, Vahid Vahedi