Abstract: The invention provides alkene fluoroalkanol and fluorinated polyol precursors to fluoroalkanol-substituted ?,?-unsaturated esters. The fluoroalkanol-substituted ?,?-unsaturated esters are olefins that can be readily polymerized to provide fluoroalkanol-substituted polymers useful in lithographic photoresist compositions. Also provided are methods for synthesizing the alkene fluoroalkanol and fluorinated polyol precursors.

Abstract: The present invention relates to a radiation sensitive photoresist composition. The composition comprises a polymer comprising at least two monomers. The first monomer has an acid cleavable tertiary ester group. The second monomer is an acidic monomer. The acid cleavable ester group of the polymer has a surprisingly low activation energy which results in improved resist images in lithographic processes.

Abstract: A method of forming a structure. The method including: forming a layer of a polymerizable composition including one or more polyhedral silsesquioxane oligomers each having one or more polymerizable groups, one or more polymerizable diluents, one or more photoacid generators and/or one or more photoinitiators; pressing a surface of a template having a relief pattern into the layer, the template, the layer filling voids in the relief pattern; polymerizing the layer to have thick and thin regions corresponding to the relief pattern; removing the template; removing the thin regions of the dielectric layer; and either curing the layer to create a porous dielectric layer followed by filling spaces between the thick regions of the porous dielectric layer with an electrically conductive material or filling spaces between the thick regions of the dielectric layer with an electrically conductive material followed by curing the dielectric layer to create a porous dielectric layer.

Abstract: The invention provides alkene fluoroalkanol and fluorinated polyol precursors to fluoroalkanol-substituted ?,?-unsaturated esters. The fluoroalkanol-substituted ?,?-unsaturated esters are olefins that can be readily polymerized to provide fluoroalkanol-substituted polymers useful in lithographic photoresist compositions. Also provided are methods for synthesizing the alkene fluoroalkanol and fluorinated polyol precursors.

Abstract: A method of forming an image. The method includes: a transfer layer on a substrate; forming on the transfer layer, an etch barrier layer; pressing a template having a relief pattern into the etch barrier layer; exposing the etch barrier layer to actinic radiation forming a cured etch barrier layer having thick and thin regions corresponding to the relief pattern; removing the template; removing the thin regions of the cured etch barrier layer; removing regions of the transfer layer not protected by the etch barrier layer; removing regions of the substrate not protected by the transfer layer and any remaining etch barrier layer; and removing remaining transfer layer. The transfer layer may be removed using a solvent, the etch barrier layer may include a release agent and an adhesion layer may be formed between the transfer layer and the etch barrier layer. A reverse tone process is also described.

Abstract: A composition of matter for the recording medium of nanometer scale thermo-mechanical information storage devices and a nanometer scale thermo-mechanical information storage device. The composition includes: one or more polyaryletherketone copolymers, each of the one or more polyaryletherketone copolymers comprising (a) a first monomer including an aryl ether ketone and (b) a second monomer including an aryl ether ketone and a first phenylethynyl moiety, each of the one or more polyaryletherketone copolymers having two terminal ends, each terminal end having a phenylethynyl moiety the same as or different from the first phenylethynyl moiety. The one or more polyaryletherketone copolymers are thermally cured and the resulting cross-linked polyaryletherketone resin used as the recording layer in an atomic force data storage device.

Abstract: A composition of matter for a recording medium in atomic force data storage devices. The composition includes one or more poly(aryl ether ketone) copolymers, each of the one or more poly(aryl ether ketone) copolymers including (a) a first monomer including an aryl ether ketone and (b) a second monomer including an aryl ether ketone and a hydrogen bonding cross-linking moiety, the moiety capable of forming two or more hydrogen bonds at room temperature, each of the one or more poly(aryl ether ketone) copolymers having two terminal ends, each terminal end having a phenylethynyl moiety. The covalent and hydrogen bonding cross-linking of the poly(aryl ether ketone) oligomers may be tuned to match thermal and force parameters required in read-write-erase cycles.

Abstract: A molding composition and a method of forming an pattern. The method includes forming on a substrate a molding layer of a molding composition of aromatic divinyl ethers; pressing the template into the molding layer, the template having a relief pattern, the molding layer filling voids in the relief pattern, the template not contacting the substrate; exposing the molding layer to actinic radiation, the actinic radiation converting the molding layer to a cured molding layer having thick and thin regions corresponding to the relief pattern; removing the template; filling the thin regions of the relief pattern with a backfill material; removing regions of the molding layer not protected by the backfill material to expose regions of the substrate; forming trenches in the exposed regions of the substrate; and removing any remaining molding layer and backfill material. A transfer layer may be used between the molding layer and the substrate.

Abstract: A composition of matter for the recording medium of nanometer scale thermo-mechanical information storage devices and a nanometer scale thermo-mechanical information storage device. The composition includes: one or more polyaryletherketone polymers, each of the one or more polyaryletherketone polymers having two terminal ends, each terminal end having two or more phenylethynyl moieties. The one or more polyaryletherketone polymers are thermally cured and the resulting cross-linked polyaryletherketone resin used as the recording layers in atomic force data storage devices.

Abstract: A composition of matter for a recording medium in atomic force data storage devices. The composition includes one or more poly(aryl ether ketone) copolymers, each of the one or more poly(aryl ether ketone) copolymers including (a) a first monomer including an aryl ether ketone and (b) a second monomer including an aryl ether ketone and a hydrogen bonding cross-linking moiety, the moiety capable of forming two or more hydrogen bonds at room temperature, each of the one or more poly(aryl ether ketone) copolymers having two terminal ends, each terminal end having a phenylethynyl moiety. The covalent and hydrogen bonding cross-linking of the poly(aryl ether ketone) oligomers may be tuned to match thermal and force parameters required in read-write-erase cycles.

Abstract: A method of forming an image. The method includes: a transfer layer on a substrate; forming on the transfer layer, an etch barrier layer; pressing a template having a relief pattern into the etch barrier layer; exposing the etch barrier layer to actinic radiation forming a cured etch barrier layer having thick and thin regions corresponding to the relief pattern; removing the template; removing the thin regions of the cured etch barrier layer; removing regions of the transfer layer not protected by the etch barrier layer; removing regions of the substrate not protected by the transfer layer and any remaining etch barrier layer; and removing remaining transfer layer. The transfer layer may be removed using a solvent, the etch barrier layer may include a release agent and an adhesion layer may be formed between the transfer layer and the etch barrier layer. A reverse tone process is also described.

Abstract: An approach is presented for designing a polymeric layer for nanometer scale thermo-mechanical storage devices. Cross-linked polyaryletherketone polymers are used as the recording layers in atomic force data storage devices, giving significantly improved performance when compared to previously reported cross-linked and linear polymers. The cross-linking of the polyaryletherketone polymers may be tuned to match thermal and force parameters required in read-write-erase cycles.

Abstract: A method of forming low dielectric contrast structures by imprinting a silsesquioxane based polymerizable composition. The imprinting composition including: one or more polyhedral silsesquioxane oligomers each having one or more polymerizable groups, wherein each of the one or more polymerizable group is bound to a different silicon atom of the one or more polyhedral silsesquioxane oligomers; and one or more polymerizable diluents, the diluents constituting at least 50% by weight of the composition.

Abstract: A composition of matter for the recording medium of nanometer scale thermo-mechanical information storage devices and a nanometer scale thermo-mechanical information storage device. The composition includes: one or more polyaryletherketone copolymers, each of the one or more polyaryletherketone copolymers comprising (a) a first monomer including an aryl ether ketone and (b) a second monomer including an aryl ether ketone and a first phenylethynyl moiety, each of the one or more polyaryletherketone copolymers having two terminal ends, each terminal end having a phenylethynyl moiety the same as or different from the first phenylethynyl moiety. The one or more polyaryletherketone copolymers are thermally cured and the resulting cross-linked polyaryletherketone resin used as the recording layer in an atomic force data storage device.

Abstract: A composition of matter for the recording medium of nanometer scale thermo-mechanical information storage devices and a nanometer scale thermo-mechanical information storage device. The composition includes: one or more polyaryletherketone polymers, each of the one or more polyaryletherketone polymers having two terminal ends, each terminal end having two or more phenylethynyl moieties. The one or more polyaryletherketone polymers are thermally cured and the resulting cross-linked polyaryletherketone resin used as the recording layers in atomic force data storage devices.

Abstract: A dissolution modification agent suitable for use in a photoresist composition including a polymer, a photoacid generator and casting solvent. The dissolution modification agent is insoluble in aqueous alkaline developer and inhibits dissolution of the polymer in the developer until acid is generated by the photoacid generator being exposed to actinic radiation, whereupon the dissolution modifying agent, at a suitable temperature, becomes soluble in the developer and allows the polymer to dissolve in the developer. The DMAs are glucosides, cholates, citrates and adamantanedicarboxylates protected with acid-labile ethoxyethyl, tetrahydrofuranyl, and angelicalactonyl groups.

Abstract: The invention provides alkene fluoroalkanol and fluorinated polyol precursors to fluoroalkanol-substituted ?,?-unsaturated esters. The fluoroalkanol-substituted ?,?-unsaturated esters are olefins that can be readily polymerized to provide fluoroalkanol-substituted polymers useful in lithographic photoresist compositions. Also provided are methods for synthesizing the alkene fluoroalkanol and fluorinated polyol precursors.

Abstract: A photoresist composition including a polymer, a photoacid generator and a dissolution modification agent, a method of forming an image using the photoresist composition and the dissolution modification agent composition. The dissolution modification agent is insoluble in aqueous alkaline developer and inhibits dissolution of the polymer in the developer until acid is generated by the photoacid generator being exposed to actinic radiation, whereupon the dissolution modifying agent, at a suitable temperature, becomes soluble in the developer and allows the polymer to dissolve in the developer. The DMAs are glucosides, cholates, citrates and adamantanedicarboxylates protected with acid-labile ethoxyethyl, tetrahydrofuranyl, and angelicalactonyl groups.

Abstract: The present invention relates to compositions comprising poly-oxycarbosilane and methods for using the compositions in step and flash imprint lithography. The imprinting compositions comprise a poly-oxycarbosilane polymer, a silanol, a reaction initiator and optionally a pore generator.

Abstract: An approach is presented for designing a polymeric layer for nanometer scale thermo-mechanical storage devices. Cross-linked polyaryletherketone polymers are used as the recording layers in atomic force data storage devices, giving significantly improved performance when compared to previously reported cross-linked and linear polymers. The cross-linking of the polyaryletherketone polymers may be tuned to match thermal and force parameters required in read-write-erase cycles.