Abstract: A molding composition and a method of forming an pattern. The method includes forming on a substrate a molding layer of a molding composition of aromatic divinyl ethers; pressing the template into the molding layer, the template having a relief pattern, the molding layer filling voids in the relief pattern, the template not contacting the substrate; exposing the molding layer to actinic radiation, the actinic radiation converting the molding layer to a cured molding layer having thick and thin regions corresponding to the relief pattern; removing the template; filling the thin regions of the relief pattern with a backfill material; removing regions of the molding layer not protected by the backfill material to expose regions of the substrate; forming trenches in the exposed regions of the substrate; and removing any remaining molding layer and backfill material. A transfer layer may be used between the molding layer and the substrate.

Abstract: The present invention relates to a radiation sensitive photoresist composition. The composition comprises a polymer comprising at least two monomers. The first monomer has an acid cleavable tertiary ester group. The second monomer is an acidic monomer. The acid cleavable ester group of the polymer has a surprisingly low activation energy which results in improved resist images in lithographic processes.

Abstract: The invention provides alkene fluoroalkanol and fluorinated polyol precursors to fluoroalkanol-substituted ?,?-unsaturated esters. The fluoroalkanol-substituted ?,?-unsaturated esters are olefins that can be readily polymerized to provide fluoroalkanol-substituted polymers useful in lithographic photoresist compositions. Also provided are methods for synthesizing the alkene fluoroalkanol and fluorinated polyol precursors.

Abstract: A method of forming low dielectric contrast structures by imprinting a silsesquioxane based polymerizable composition. The imprinting composition including: one or more polyhedral silsesquioxane oligomers each having one or more polymerizable groups, wherein each of the one or more polymerizable group is bound to a different silicon atom of the one or more polyhedral silsesquioxane oligomers; and one or more polymerizable diluents, the diluents constituting at least 50% by weight of the composition.

Abstract: Polymers containing an acetal or ketal linkage and their use in lithographic photoresist compositions, particularly in chemical amplification photoresists, are provided. The polymer is prepared from at least one first olefinic monomer containing an acetal or ketal linkage, the acid-catalyzed cleavage of which renders the polymer soluble in aqueous base; and at least one second olefinic monomer selected from (i) an olefinic monomer containing a pendant fluorinated hydroxyalkyl group RH, (ii) an olefinic monomer containing a pendant fluorinated alkylsulfonamide group RS, and (iii) combinations thereof. The acetal or ketal linkage may be contained within an acid-cleavable substituent RCL in the first olefinic monomer. A method for using the photoresist compositions containing these polymers in preparing a patterned substrate is also provided in which the polymer is rendered soluble in aqueous base at a temperature of less than about 100° C.

Abstract: The present invention relates to cyclic polymers and their use in photolithographic applications. The cyclic polymers contain a pendant acid labile functional group and a functional group containing a protected hydroxyl moiety. The polymers are post modified by deprotecting the pendant hydroxyl moiety and reacting the deprotected hydroxyl containing moiety with a coreactant. The post-functionalized polymers find application in chemically amplified photoresist compositions.

Abstract: The present invention relates to a radiation sensitive photoresist composition comprising a photoacid initiator and a polycyclic polymer comprising repeating units that contain pendant acid labile groups. Upon exposure to an imaging radiation source the photoacid initiator generates an acid which cleaves the pendant acid labile groups effecting a polarity change in the polymer. The polymer is rendered soluble in an aqueous base in the areas exposed to the imaging source.

Abstract: Polymerizable monomers having silicon containing groups that are transparent at 193 nm; and ethylenically unsaturated group are provided. Polymers from these monomers can be used in processes for forming sub-100 nm images with a chemically amplified, radiation sensitive bilayer resist. The bilayer resist is disposed on a substrate and comprises (i) a top imaging layer comprising a radiation sensitive acid generator and (ii) an organic underlayer. The bilayer resist can be used in the manufacturing of integrated circuits.

Abstract: The magnetic surfaces of the magnetoresistive or magnetic tunnel junction and inductive write head and magnetic recording disk of a hard disk drive are protected from corrosion by inserting a vapor phase corrosion inhibitor (VPCI) package into the disk drive for providing additives in the vapor phase of the disk drive enclosure to maintain an equilibrium and renewable adsorbed film of metal passivators on the head and disk surfaces. The VPCI package includes at least one vapor phase corrosion inhibitor (VPCI) embedded in a polymeric matrix.

Abstract: The magnetic surfaces of the magnetoresistive or magnetic tunnel junction and inductive write head and magnetic recording disk of a hard disk drive are protected from corrosion by inserting a vapor phase corrosion inhibitor (VPCI) package into the disk drive for providing additives in the vapor phase of the disk drive enclosure to maintain an equilibrium and renewable adsorbed film of metal passivators on the head and disk surfaces. The VPCI package includes at least one vapor phase corrosion inhibitor (VPCI) embedded in a polymeric matrix.

Abstract: The present invention relates to cyclic polymers and their use in photolithographic applications. The cyclic polymers contain a pendant acid labile functional group and a functional group containing a protected hydroxyl moiety. The polymers are post modified by deprotecting the pendant hydroxyl moiety and reacting the deprotected hydroxyl containing moiety with a coreactant. The post-functionalized polymers find application in chemically amplified photoresist compositions.

Abstract: Polymerizable monomers having silicon containing groups that are transparent at 193 nm; and ethylenically unsaturated group are provided. Polymers from these monomers can be used in processes for forming sub-100 nm images with a chemically amplified, radiation sensitive bilayer resist. The bilayer resist is disposed on a substrate and comprises (i) a top imaging layer comprising a radiation sensitive acid generator and (ii) an organic underlayer. The bilayer resist can be used in the manufacturing of integrated circuits.

Abstract: The present invention relates to a radiation sensitive photoresist composition comprising a photoacid initiator and a polycyclic polymer comprising repeating units that contain pendant acid labile groups. Upon exposure to an imaging radiation source the photoacid initiator generates an acid which cleaves the pendant acid labile groups effecting a polarity change in the polymer. The polymer is rendered soluble in an aqueous base in the areas exposed to the imaging source.

Abstract: Polymerizable monomers having silicon containing groups that are transparent at 193 nm; and ethylenically unsaturated group are provided. Polymers from these monomers can be used in processes for forming sub-100 nm images with a chemically amplified, radiation sensitive bilayer resist. The bilayer resist is disposed on a substrate and comprises (i) a top imaging layer comprising a radiation sensitive acid generator and (ii) an organic underlayer. The bilayer resist can be used in the manufacturing of integrated circuits.

Abstract: The invention relates to a process for forming an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises porous organic polysilica.

Abstract: Acid-catalyzed positive photoresist compositions which are imageable with 193 nm radiation (and possibly other radiation) and are developable to form photoresist structures of improved development characteristics and improved etch resistance are enabled by the use of resist compositions containing cyclic olefin polymer having a cyclic olefin monomer having a lactone moiety, the monomer having no oxygen atoms intervening between the lactone moiety and a ring of the cyclic olefin. Preferred lactone moieties are spirolactones (having a 5 or 6 membered ring) directly to a cyclic olefin ring.

Abstract: The present invention relates to a radiation-sensitive resist composition comprising a radiation-sensitive acid generator and a copolymer binder formed by the reaction of (a) an acrylate or methacrylate monomer having a photogenerated acid cleavable substituent and (b) an acrylate or methacrylate monomer having a polar non photoacid cleavable substituent.

Abstract: The invention relates to a polymeric, radiation-sensitive resist composition comprising (i) iodonium sulfonate radiation sensitive acid generator; (ii) a polymer; and (iii) an acid labile compound.

Abstract: A novel radiation-sensitive lithographic photoresist composition is provided which has improved sensitivity and resolution. The composition comprises a photosensitive acid generator and an acrylate or methacrylate copolymer. The copolymer contains first monomeric units having polar pendant groups and second monomeric units containing photoacid-cleavable ester groups. The polar pendant groups preferably comprise C.sub.6 -C.sub.12 alicyclic substituents containing a polar moiety R*, wherein the alicyclic substituents are bound through a linker moiety to the polymer backbone. Other monomeric units may be included as well. A process for using the composition to generate resist images on a substrate, i.e., in the manufacture of integrated circuits or the like.

Abstract: The present invention is directed to methods of fabricating electrically conducting polymers and precursors thereof in which the polymer has a controlled level of aggregation and morphology. This is done by controlling the rate of polymerization and the rate at which the polymer precipitates from solution during the polymerization reaction. An additive is added to the polymerization medium, said additive increasing or decreasing the rate at which the polymer precipitates from the reaction medium. When said additive is a second organic solvent, the polymerization reaction proceeds homogeneously for a longer period of time than does the corresponding polymerization reaction which does not include said additive. Control of the polymerization kinetics allows control of the morphology for the isolated polymer and in turn control of the properties of these polymers.