Patents by Inventor Richard C. Ruby

Richard C. Ruby has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetron with controlled DC power
    Patent number: 6824653
    Abstract: A magnetron with mechanisms for smoothly and continuously adjusting a DC power applied to its targets to compensate for the changes in the sputtering characteristics of the targets that occur with target aging. A magnetron according to the present teachings includes a set of concentric targets for sputtering a film onto a wafer in response to an AC power and a DC power applied to the targets and a power controller that adjusts the DC power. The adjustments to the DC power enable the magnetron to maintain uniformity in the thicknesses of films formed with the magnetron throughout the life of its targets.
    Type: Grant
    Filed: February 21, 2003
    Date of Patent: November 30, 2004
    Assignee: Agilent Technologies, Inc
    Inventors: Yury Oshmyansky, Sergey Mishin, Richard C. Ruby, John D. Larson, III
  • Method of fabricating a semiconductor device and an apparatus embodying the method
    Patent number: 6794958
    Abstract: A method for fabricating an apparatus, and an apparatus embodying the same is disclosed. First a device chip having circuit elements is fabricated. Next, a cap with a cap circuit is fabricated. Finally, the cap is placed on the device chip to connect a first contact point with a second contact point using the connector on the cap. The apparatus includes a device chip and a cap. The device chip has the first contact point and a second contact point. The cap has the cap circuit that, when the cap is placed on the device chip, connects the first contact point with the second contact point.
    Type: Grant
    Filed: July 25, 2002
    Date of Patent: September 21, 2004
    Assignee: Agilent Technologies, Inc.
    Inventors: Joel Alan Philliber, Richard C. Ruby
  • Manufacturing process for thin film bulk acoustic resonator (FBAR) filters
    Publication number: 20040172798
    Abstract: Method for fabricating an acoustical resonator on a substrate having a top surface. First, a depression in said top surface is generated. Next, the depression is filled with a sacrificial material. The filled depression has an upper surface level with said top surface of said substrate. Next, a first electrode is deposited on said upper surface. Then, a layer of piezoelectric material is deposited on said first electrode. A second electrode is deposited on the layer of piezoelectric material using a mass load lift-off process.
    Type: Application
    Filed: March 7, 2003
    Publication date: September 9, 2004
    Inventors: Richard C. Ruby, John D. Larson, Paul D. Bradley
  • Method for producing thin bulk acoustic resonators (FBARs) with different frequencies on the same substrate by subtracting method and apparatus embodying the method
    Patent number: 6787048
    Abstract: A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. The resonator is fabricated on a substrate by fabricating a bottom electrode layer and a piezoelectric (PZ) layer over the bottom electrode layer. A selected portion of the PZ layer is partially etched. Then, a top electrode is fabricated over the selected portion of the PZ layer.
    Type: Grant
    Filed: March 5, 2001
    Date of Patent: September 7, 2004
    Assignee: Agilent Technologies, Inc.
    Inventors: Paul D. Bradley, Richard C. Ruby, John D. Larson, III
  • Magnetron with controlled DC power
    Publication number: 20040163944
    Abstract: A magnetron with mechanisms for smoothly and continuously adjusting a DC power applied to its targets to compensate for the changes in the sputtering characteristics of the targets that occur with target aging. A magnetron according to the present teachings includes a set of concentric targets for sputtering a film onto a wafer in response to an AC power and a DC power applied to the targets and a power controller that adjusts the DC power. The adjustments to the DC power enable the magnetron to maintain uniformity in the thicknesses of films formed with the magnetron throughout the life of its targets.
    Type: Application
    Filed: February 21, 2003
    Publication date: August 26, 2004
    Inventors: Yury Oshmyansky, Sergey Mishin, Richard C. Ruby, John D. Larson
  • Magnetron with adjustable target positioning
    Publication number: 20040163952
    Abstract: A magnetron with mechanisms for controlling the magnetic field that acts on its targets in such a manner as to provide control over erosion patterns and independent control of stress, uniformity, deposition rate, and coupling coefficient of a deposited film. A magnetron according to the present teachings includes a set of targets each for eroding a material for deposition onto a wafer contained in the magnetron and a mechanism for adjusting a racetrack position on each target. The racetrack position defines the areas of the targets from which a predominant amount of the material is eroded. The control of racetrack position enables precise control of erosion characteristics and control over stress, uniformity, deposition rate, and coupling coefficient.
    Type: Application
    Filed: February 21, 2003
    Publication date: August 26, 2004
    Inventors: Yury Oshmyansky, Sergey Mishin, Richard C. Ruby, John D. Larson
  • Die singulation using deep silicon etching
    Patent number: 6777267
    Abstract: A method for separating dies on a wafer includes etching channels around the dies on a first side of the wafer, mounting the first side of the wafer to a quartz plate with an UV adhesive, and grinding a second side of the wafer until the channels are exposed on the second side of the wafer. At this point, the dies are separated but held together by the UV adhesive on the quartz plate. The method further includes mounting a second side of the wafer to a tack tape, exposing UV radiation through the quartz plate to the UV adhesive. At this point, the UV adhesive looses its adhesion so the dies are held together by the tack tape. The method further includes dismounting the quartz plate from the first side of the wafer and picking up the individual dies from the tack tape.
    Type: Grant
    Filed: November 1, 2002
    Date of Patent: August 17, 2004
    Assignee: Agilent Technologies, Inc.
    Inventors: Richard C. Ruby, Frank S. Geefay, Cheol Hyun Han, Qing Gan, Andrew T. Barfknecht
  • Film deposition to enhance sealing yield of microcap wafer-level package with vias
    Patent number: 6777263
    Abstract: A method for forming a wafer package includes forming a die structure, wherein the die structure includes a first wafer, a device mounted on the first wafer, a second wafer mounted atop the first wafer with a first seal ring around the device and a second seal ring around a via contact. The method further includes forming a trench in the second wafer around the first seal ring, filling the trench and the via contact with a sealing agent, patterning a topside of the second wafer to removed the excessive sealing agent and to expose a contact pad of the via contact, and singulating a die around the first seal ring.
    Type: Grant
    Filed: August 21, 2003
    Date of Patent: August 17, 2004
    Assignee: Agilent Technologies, Inc.
    Inventors: Qing Gan, Richard C. Ruby, Frank S. Geefay, Andrew T. Barfknecht
  • Die singulation using deep silicon etching
    Publication number: 20040087059
    Abstract: A method for separating dies on a wafer includes etching channels around the dies on a first side of the wafer, mounting the first side of the wafer to a quartz plate with an UV adhesive, and grinding a second side of the wafer until the channels are exposed on the second side of the wafer. At this point, the dies are separated but held together by the UV adhesive on the quartz plate. The method further includes mounting a second side of the wafer to a tack tape, exposing UV radiation through the quartz plate to the UV adhesive. At this point, the UV adhesive looses its adhesion so the dies are held together by the tack tape. The method further includes dismounting the quartz plate from the first side of the wafer and picking up the individual dies from the tack tape.
    Type: Application
    Filed: November 1, 2002
    Publication date: May 6, 2004
    Inventors: Richard C. Ruby, Frank S. Geefay, Cheol Hyun Han, Qing Gan, Andrew T. Barfknecht
  • Method of fabricating thin film bulk acoustic resonator (FBAR) and FBAR structure embodying the method
    Patent number: 6714102
    Abstract: A method for fabricating an acoustic resonator, for example a Thin Film Bulk Acoustic Resonators (FBAR), on a substrate. A depression is etched and filled with sacrificial material. The FBAR is fabricated on the substrate spanning the depression, the FBAR having an etch hole. The depression may include etch channels in which case the FBAR may include etch holes aligned with the etch channels. A resonator resulting from the application of the technique is suspended in air and includes at least one etch hole and may include etch channels.
    Type: Grant
    Filed: March 1, 2001
    Date of Patent: March 30, 2004
    Assignee: Agilent Technologies, Inc.
    Inventors: Richard C. Ruby, Paul Bradley, Yury Oshmyansky, Domingo A. Figueredo
  • Method for adjusting and stabilizing the frequency of an acoustic resonator
    Patent number: 6710508
    Abstract: In an array of acoustic resonators, the resonant frequencies of the resonators are adjusted and stabilized in order to achieve target frequency responses for the array. The method of adjusting is achieved by intentionally inducing oxidation at an elevated temperature. Thermal oxidation grows a molybdenum oxide layer on the surface of the top electrode of an electrode-piezoelectric stack, thereby increasing the relative thickness of the electrode layer to the piezoelectric layer. In one embodiment, the resonant frequency of an FBAR is adjusted downwardly as the top electrode layer increases relative to the piezoelectric layer. In another embodiment, the method of stabilizing is achieved by intentionally inducing oxidation at an elevated temperature.
    Type: Grant
    Filed: November 27, 2001
    Date of Patent: March 23, 2004
    Assignee: Agilent Technologies, Inc.
    Inventors: Richard C. Ruby, Joe Qingzhe Wen
  • Thin film bulk acoustic resonator (FBAR) and inductor on a monolithic substrate and method of fabricating the same
    Patent number: 6710681
    Abstract: An apparatus having both a resonator and an inductor fabricated on a single substrate and a method of fabricating the apparatus are disclosed. The apparatus includes a resonator and an inductor that is connected to the resonator. Both the resonator and the inductor are fabricated over their respective cavities to produce a high Q-factor filter circuit.
    Type: Grant
    Filed: July 13, 2001
    Date of Patent: March 23, 2004
    Assignee: Agilent Technologies, Inc.
    Inventors: Domingo A. Figueredo, Richard C. Ruby, Yury Oshmyansky, Paul Bradley
  • Resonator with protective layer
    Publication number: 20040021529
    Abstract: A thin-film resonator having a protective layer and a method of making the same are disclosed. The resonator has a bottom electrode, piezoelectric layer, a top electrode, and protective layer. The protective layer covers the top electrode to protect the top electrode from air and moisture. A protective underlayer can be used to protect the bottom electrode from air and moisture. The protective underlayer can also serve as a seed layer to assist in fabrication of high quality piezoelectric layer.
    Type: Application
    Filed: July 30, 2002
    Publication date: February 5, 2004
    Inventors: Paul D. Bradley, Yury Oshmyansky, Richard C. Ruby
  • Method of fabricating a semiconductor device and an apparatus embodying the method
    Publication number: 20040017271
    Abstract: A method for fabricating an apparatus, and an apparatus embodying the same is disclosed. First a device chip having circuit elements is fabricated. Next, a cap with a cap circuit is fabricated. Finally, the cap is placed on the device chip to connect a first contact point with a second contact point using the connector on the cap. The apparatus includes a device chip and a cap. The device chip has the first contact point and a second contact point. The cap has the cap circuit that, when the cap is placed on the device chip, connects the first contact point with the second contact point.
    Type: Application
    Filed: July 25, 2002
    Publication date: January 29, 2004
    Inventors: Joel Alan Philliber, Richard C. Ruby
  • Method for making thin film bulk acoustic resonators (FBARS) with different frequencies on a single substrate and apparatus embodying the method
    Patent number: 6617249
    Abstract: A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. An FBAR is fabricated on a substrate by introducing a mass loading top electrode layer. For a substrate having multiple resonators, the top mass loading electrode layer is introduced for only selected resonator to provide resonators having different resonance frequencies on the same substrate.
    Type: Grant
    Filed: March 5, 2001
    Date of Patent: September 9, 2003
    Assignee: Agilent Technologies, Inc.
    Inventors: Richard C. Ruby, John D. Larson, III, Paul D. Bradley
  • Film bulk acoustic resonator (FBAR) and the method of making the same
    Publication number: 20030141946
    Abstract: An apparatus having a thin film bulk acoustic resonator (FBAR) with positively sloped bottom electrode and a method of making the same is disclosed. The resonator has a bottom electrode, a top electrode, and core material. The bottom electrode includes a positively sloped edge. To make the apparatus including the resonator, first, a bottom electrode layer is deposited. Then, the bottom electrode layer is dry etched to fabricate a bottom electrode having a positively sloped edge. Next, a core layer is fabricated above the bottom electrode. Finally, a top electrode is fabricated over the core layer.
    Type: Application
    Filed: January 31, 2002
    Publication date: July 31, 2003
    Inventors: Richard C. Ruby, Teresa Volcjak, Urupattur C. Sridharan, Kuhn Seo, Allen Chien, Alexia P. Kekoa
  • Method for adjusting and stabilizing the frequency of an acoustic resonator
    Publication number: 20030098631
    Abstract: In an array of acoustic resonators, the resonant frequencies of the resonators are adjusted and stabilized in order to achieve target frequency responses for the array. The method of adjusting is achieved by intentionally inducing oxidation at an elevated temperature. Thermal oxidation grows a molybdenum oxide layer on the surface of the top electrode of an electrode-piezoelectric stack, thereby increasing the relative thickness of the electrode layer to the piezoelectric layer. In one embodiment, the resonant frequency of an FBAR is adjusted downwardly as the top electrode layer increases relative to the piezoelectric layer. In another embodiment, the method of stabilizing is achieved by intentionally inducing oxidation at an elevated temperature.
    Type: Application
    Filed: November 27, 2001
    Publication date: May 29, 2003
    Inventors: Richard C. Ruby, Joe Qingzhe Wen
  • Method of providing differential frequency adjusts in a thin film bulk acoustic resonator (FBAR) filter and apparatus embodying the method
    Patent number: 6566979
    Abstract: A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. A resonator is fabricated on a substrate, and its top electrode 56 is oxidized to form a oxide layer 58. For a substrate having multiple resonators, the top electrode 56 of only selected resonator is oxidized to provide resonators having different resonance frequencies on the same substrate.
    Type: Grant
    Filed: March 5, 2001
    Date of Patent: May 20, 2003
    Assignee: Agilent Technologies, Inc.
    Inventors: John D. Larson, III, Richard C. Ruby, Paul D. Bradley
  • Mounting film bulk acoustic resonators in microwave packages using flip chip bonding technology
    Patent number: 6550664
    Abstract: A device includes a die that contains a filter circuit. The filter is implemented using film bulk acoustic resonators. A package contains the die. The package includes a base portion. Signal paths are incorporated in the base portion. Solder joints attach the die to the base portion. The solder joints electrically connect pads on the die to the signal paths in the base portion. The solder joints do not include, and are used instead of, wire bonds.
    Type: Grant
    Filed: December 9, 2000
    Date of Patent: April 22, 2003
    Assignee: Agilent Technologies, Inc.
    Inventors: Paul Bradley, John D. Larson, III, Richard C. Ruby
  • Method of making tunable thin film acoustic resonators
    Patent number: 6507983
    Abstract: An acoustical resonator comprising top and bottom electrodes that sandwich a PZ layer. The resonance frequency of the acoustical resonator may be adjusted after fabrication by utilizing heating elements included in the acoustical resonator and/or by adjusting the thickness of a tuning layer. In the preferred embodiment of the present invention, the electrodes comprise Mo layers. One embodiment of the present invention is constructed on a Si3N4 membrane. A second embodiment of the present invention is constructed such that it is suspended over a substrate on metallic columns. In the preferred embodiment, the electrodes are deposited by a method that minimizes the stress in the electrodes.
    Type: Grant
    Filed: November 13, 1998
    Date of Patent: January 21, 2003
    Assignee: Agilent Technologies, Inc.
    Inventors: Richard C. Ruby, Paul Philip Merchant