Patents by Inventor Richard Farrell

Richard Farrell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10671633
    Abstract: A computer system and method for performing 3D geolocation within an urban environment to at least a building floor level by combining geocoded locations with local dimensional data available from municipal agencies processed to calculate estimated elevation of building floors in a target building. The local dimensional data is building inventory information that includes the ground elevation of the target building, the number of above-ground floors in the target building and the height of the target building. The system is configured to calculate the building floor level of a particular floor in the target building from the local data. Standard equations for estimating the height of a building are adapted to generate the elevation of the particular floor within the target building relative to the ground elevation of the target building.
    Type: Grant
    Filed: April 18, 2018
    Date of Patent: June 2, 2020
    Inventor: Edward Richard Farrell
  • Publication number: 20200163782
    Abstract: A system and method for transmission of a signal for a powered assistive device has a sensor node with a wireless transmitter adapted for digitally transmitting a transmitted signal, the sensor node adapted for receiving and monitoring a sensor signal from a sensor attached to a user, and a master node with a controller and a wireless receiver for receiving the transmitted signal from the wireless transmitter. The master node processes the transmitted signal and communicates a control signal to the powered assistive device. The wireless transmitter transmits the transmitted signal at a first rate when the wireless transmitter adapted to transmit the transmitted signal at a first rate when the sensor signal is indicative of the rest state and to transmit the transmitted signal at a second rate when the sensor signal is indicative of the active state, the second rate being greater than the first rate.
    Type: Application
    Filed: November 27, 2019
    Publication date: May 28, 2020
    Applicant: Worcester Polytechnic Institute
    Inventors: Benjamin Edward McDonald, Todd Richard Farrell, Edward Clancy, Jianan Li, Xinming Huang
  • Publication number: 20200152453
    Abstract: Methods for processing a substrate are provided. The method includes receiving a substrate. The substrate has a front side surface, a backside surface, and a side edge surface. The method also includes coating the front side surface, the backside surface and the side edge surface with a self-assembled monolayer and exposing an area of interest with actinic radiation. The actinic radiation causes a de-protection reaction within the self-assembled monolayer within the central region. The method also includes removing the self-assembled monolayer from the area of interest while the self-assembled monolayer remains on remaining surfaces of the substrate.
    Type: Application
    Filed: November 12, 2019
    Publication date: May 14, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Corey LEMLEY, Richard Farrell, Hoyoung Kang
  • Publication number: 20200103755
    Abstract: A method of processing a substrate includes: providing structures on a surface of a substrate; depositing a self-assembled monolayer (SAM) over the structures and the substrate, the SAM being reactive to a predetermined wavelength of radiation; determining a first pattern of radiation exposure, the first pattern of radiation exposure having a spatially variable radiation intensity across the surface of the substrate and the structures; exposing the SAM to radiation according to the first pattern of radiation exposure, the SAM being configured to react with the radiation; developing the SAM with a predetermined removal fluid to remove portions of the SAM that are not protected from the predetermined fluid; and depositing a spacer material on the substrate and the structures, the spacer material being deposited at varying thicknesses based on an amount of the SAM remaining on the surface of the substrate and the structures.
    Type: Application
    Filed: September 27, 2019
    Publication date: April 2, 2020
    Applicant: Tokyo Electron Limited
    Inventors: Richard FARRELL, Hoyoung KANG, David L. O'MEARA
  • Publication number: 20200097590
    Abstract: A data processing manager receives a batch of data for real-time data processing. The batch of data is associated with a correlation identifier and includes a set of data objects. The data processing manager assigns, to each data object, a unique resource identifier. The data processing manager transmits a data processing request to a target data system, and the data processing request includes a set of callback functions corresponding to the set of data objects. The callback functions identify the unique resource identifier. As the target data system processes the data objects, the target data system executes the callback functions, which operate as dynamic return endpoints for the data processing results.
    Type: Application
    Filed: September 24, 2018
    Publication date: March 26, 2020
    Inventors: Richard Duane Perrin, Shawn Crosby, Suraj Shrestha, Anthony Sparks, Zhenge Li, Clarence Richard Farrell, Robert Hite, Scotty D. Gibson
  • Publication number: 20190295906
    Abstract: A method is provided for self-aligned multi-patterning on a semiconductor workpiece using an integrated sequence of processing steps executed on a common manufacturing platform hosting one or more film-forming modules, one or more etching modules, and one or more transfer modules. A workpiece having a mandrel pattern formed thereon is received into the common manufacturing platform. A sidewall spacer pattern is formed based, at least in part, on the mandrel pattern, the sidewall spacer pattern having a plurality of second features separated by a second pitch distance with the first pitch distance being greater than the second pitch distance. The integrated sequence of processing steps is executed within the common manufacturing platform without leaving the controlled environment and the transfer modules are used to transfer the workpiece between the processing modules while maintaining the workpiece within the controlled environment. Broadly, forming a sidewall spacer pattern based on the mandrel pattern.
    Type: Application
    Filed: March 18, 2019
    Publication date: September 26, 2019
    Inventors: Robert Clark, Richard Farrell, Kandabara Tapily, Angelique Raley, Sophie Thibaut
  • Publication number: 20190295846
    Abstract: A method is provided for self-aligned multi-patterning on a semiconductor workpiece using an integrated sequence of processing steps executed on a common manufacturing platform hosting film-forming modules, etching modules, and transfer modules. A workpiece having a mandrel pattern formed thereon is received into the common manufacturing platform. A sidewall spacer pattern is formed based, at least in part, on the mandrel pattern, the sidewall spacer pattern having a plurality of second features separated by a second pitch distance with the first pitch distance being greater than the second pitch distance. The integrated sequence of processing steps is executed within the common manufacturing platform without leaving the controlled environment and the transfer modules are used to transfer the workpiece between the processing modules while maintaining the workpiece within the controlled environment.
    Type: Application
    Filed: March 18, 2019
    Publication date: September 26, 2019
    Inventors: Robert Clark, Richard Farrell, Kandabara Tapily, Angelique Raley, Sophie Thibaut
  • Patent number: 10319637
    Abstract: A formed back-end-of-line (BEOL) metal line layer may include a plurality of metal lines with dielectric oxide caps that are disposed in between each metal lines. To overlay an interconnecting layer of metal lines on a selected metal line of the BEOL metal line layer, a block copolymer (BCP) may be formed on a patterning layer. Thereafter, a selective etching of the formed BCP creates a recess above the selected metal line. The created recess facilitates the overlaying of the interconnecting layer of metal lines.
    Type: Grant
    Filed: November 9, 2017
    Date of Patent: June 11, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Nihar Mohanty, Elliott Franke, Richard Farrell
  • Publication number: 20190105184
    Abstract: A prosthetic finger includes a main body and a terminal gripper at an end of the main body for enabling fine-motor grasping skills. The terminal gripper has at least two tongs movable relative to one another. The prosthetic finger includes a gripping mode and a flexion mode. In the gripping mode, the tongs of the terminal gripper are able to move relative to one another while the main body is not able to flex, and in the flexion mode, the main body is able to flex while the at two tongs is not able to move relative to one another.
    Type: Application
    Filed: October 10, 2018
    Publication date: April 11, 2019
    Inventors: Carlos Humberto Martinez-Luna, Michael Alfred Delph, II, Taylor Raven Duckworth, Todd Richard Farrell, Thane Robert Hunt, Craig Malone Kelly, Kevin Edward Keough, Carlton Winslow King, Benjamin Douglas Pulver, Todd William Roberts, Benjamin Edward McDonald
  • Patent number: 10186577
    Abstract: A method includes forming a first directed self-assembly material above a substrate. The substrate is patterned using the first directed self-assembly material to define at least one fin in the semiconductor substrate. A second directed self-assembly material is formed above the at least one fin to expose a top surface of the at least one fin. A substantially vertical nanowire is formed on the top surface of the at least one fin. At least a first dimension of the vertical nanowire is defined by an intrinsic pitch of the first directed self-assembly material and a second dimension of the vertical nanowire is defined by an intrinsic pitch of the second directed self-assembly material.
    Type: Grant
    Filed: September 4, 2014
    Date of Patent: January 22, 2019
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Steven Bentley, Richard A. Farrell, Gerard Schmid, Ajey Poovannummoottil Jacob
  • Publication number: 20190002816
    Abstract: Apparatus and associated methods relate to an optimizable cellular growth chamber, where growth conditions are optimized by adjusting gas pressures through a gas permeable membrane. In an illustrative example, an apparatus may provide a volume to contain growth medium and the cells under propagation, where the volume has limited but non-zero pneumatic communication with a pressure-controlled chamber via a gas-permeable membrane. Associated apparatus and methods are proposed to manage desired growth conditions via deliberate control of parameters, such as partial pressures, for example.
    Type: Application
    Filed: May 30, 2018
    Publication date: January 3, 2019
    Inventors: Ryan Douglas, Richard Farrell, David Bontrager
  • Publication number: 20180369802
    Abstract: Apparatus and associated methods relate to an adaptable microenvironment for cellular and biological processing in a traceable, transportable unit. In an illustrative example, an apparatus consists of one or more portable cell tissue containment modules that may be removably interconnected to perform a processing step and/or transfer the stored medium to another module. Associated apparatus and methods are proposed to ensure non-contaminating mechanical or fluid communication between a plurality of modules or between a module and peripheral equipment, to limit process errors such as steps performed out of order, and to intrinsically manage identification of tissue samples with accompanying process data in a manner that decreases risk of mislabeling or otherwise mishandling a sample at all stages of the production and treatment process.
    Type: Application
    Filed: May 30, 2018
    Publication date: December 27, 2018
    Inventors: Ryan Douglas, Richard Farrell, David Bontrager
  • Patent number: 10141183
    Abstract: Techniques herein provide methods for depositing spin-on metal materials for creating metal hard mask (MHM) structures without voids in the deposition. This includes effective spin-on deposition of TiOx, ZrOx, SnOx, HFOx, TaOx, et cetera. Such materials can help to provide differentiation of material etch resistivity for differentiation. By enabling spin-on metal hard mask (MHM) for use with a multi-line layer, a slit-based or self-aligned blocking strategy can be effectively used. Techniques herein include identifying a fill material to fill particular openings in a given relief pattern, modifying a surface energy value of surfaces within the opening such that a contact angle value of an interface between the fill material in liquid form and the sidewall or floor surfaces enables gap-free or void-free filling.
    Type: Grant
    Filed: January 26, 2017
    Date of Patent: November 27, 2018
    Assignee: Tokyo Electron Limited
    Inventors: Nihar Mohanty, Lior Huli, Jeffrey Smith, Richard Farrell
  • Publication number: 20180323061
    Abstract: A method to implement self-aligned triple patterning techniques for the processing of substrates is provided. In one embodiment, a self-aligned triple processing technique utilizing an organic spacer is provided. The organic spacer may be formed utilizing any of a wide range of techniques including, but not limited to, plasma deposition and spin on deposition. In one embodiment, the organic spacer may be formed via a cyclic deposition etch process. In one embodiment, the self-aligned triple patterning technique may be utilized to form patterned structures on a substrate at pitches of 26 nm or less.
    Type: Application
    Filed: May 3, 2018
    Publication date: November 8, 2018
    Inventors: Angelique D. Raley, Sophie Thibaut, Richard Farrell
  • Publication number: 20180138078
    Abstract: Techniques herein include patterning processes to prevent over-etching for various multi-patterning processes. Multi-patterning processes typically involve creation of sidewall spacers and removal of mandrels on which sidewall spacers are formed. In some patterning flows gouging of underlying layers can occurs during the various multi-patterning steps. Techniques herein include methods to prevent such gouging by using a planarization layer recessed sufficiently to removed desired materials and protect others. Such techniques can remove bi-layer mandrels without gouging underlying layers.
    Type: Application
    Filed: November 16, 2017
    Publication date: May 17, 2018
    Inventors: Richard Farrell, Nihar Mohanty, Jeffrey Smith
  • Publication number: 20180130708
    Abstract: A formed back-end-of-line (BEOL) metal line layer may include a plurality of metal lines with dielectric oxide caps that are disposed in between each metal lines. To overlay an interconnecting layer of metal lines on a selected metal line of the BEOL metal line layer, a block copolymer (BCP) may be formed on a patterning layer. Thereafter, a selective etching of the formed BCP creates a recess above the selected metal line. The created recess facilitates the overlaying of the interconnecting layer of metal lines.
    Type: Application
    Filed: November 9, 2017
    Publication date: May 10, 2018
    Inventors: Nihar Mohanty, Elliott Franke, Richard Farrell
  • Patent number: 9865682
    Abstract: A method includes forming at least one fin on a semiconductor substrate. A nanowire material is formed above the fin. A hard mask layer is formed above the fin. A first directed self-assembly material is formed above the hard mask layer. The hard mask layer is patterned using a portion of the first directed self-assembly material as an etch mask to expose a portion of the nanowire material. The nanowire material is etched using the hard mask layer as an etch mask to define a substantially vertical nanowire on a top surface of the at least one fin, wherein at least one dimension of the substantially vertical nanowire is defined by an intrinsic pitch of the first directed self-assembly material.
    Type: Grant
    Filed: September 4, 2014
    Date of Patent: January 9, 2018
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Steven Bentley, Richard A. Farrell, Gerard Schmid, Ajey Poovannummoottil Jacob
  • Publication number: 20170266410
    Abstract: Apparatus and associated methods relate to a flexible extrusion having a number of radially extending members configured for slidable insertion into a lumen of a surgical catheter shaft. In an illustrative example, the extrusion may have a flexible wall and define an interior insert lumen extending along the longitudinal axis from a proximal end to a distal end. Each of the radially extending members may have a distal engaging surface. When the extrusion is slidably inserted, for example, into the lumen of the catheter shaft, the distal engaging surface of each of the plurality of radial extending members may slidably engage an interior surface of the catheter shaft. In some examples, the inserted extrusion may define an annular distribution of longitudinally extending channels between a proximal and a distal end of the catheter. The slidable construction may advantageously simplify assembly, for example. The channels may offer end-to-end communication.
    Type: Application
    Filed: March 17, 2017
    Publication date: September 21, 2017
    Inventors: Richard Farrell, Ryan Douglas, Dennis Berke, Davis Flanagan, David Bontrager, Avong Lo, Brian Loushine
  • Publication number: 20170263465
    Abstract: One illustrative device includes, among other things, at least one fin defined in a semiconductor substrate and a substantially vertical nanowire having an oval-shaped cross-section disposed on a top surface of the at least one fin.
    Type: Application
    Filed: May 18, 2017
    Publication date: September 14, 2017
    Inventors: Steven Bentley, Richard A. Farrell, Gerard Schmid, Ajey Poovannummoottil Jacob
  • Publication number: 20170224955
    Abstract: Apparatus and associated methods relate to a catheter manipulation handle with user interface controls for steering a catheter in situ while providing an augmented (e.g., motorized, powered and tunable precision steering, and perforation safeguards) control and feedback user experience. In an illustrative example, the catheter manipulation handle may provide motor assisted operation to automatically rotate and/or deflect a distal tip of the catheter to steer and guide the distal tip to a target location in the patient's vasculature system. The augmented feedback may include, for example, haptic feedback via the handle. Haptic, audible, and/or visual feedback via the handle may indicate, for example, proximity or engagement of the distal tip with sensitive tissue. In some examples, the handle's augmented operation may advantageously amplify feedback signals to enhance the user's perception of the patient's safety with respect to the safe passage of the distal tip through the patient's vasculature.
    Type: Application
    Filed: February 6, 2017
    Publication date: August 10, 2017
    Inventors: Ryan Douglas, Richard Farrell, Dennis Berke, Davis Flanagan, David Bontrager, Brian Loushine