Patents by Inventor Richard Ho
Richard Ho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210407793Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.Type: ApplicationFiled: September 8, 2021Publication date: December 30, 2021Applicant: VERSUM MATERIALS US, LLCInventors: MARK LEONARD O'NEILL, MANCHAO XIAO, XINJIAN LEI, RICHARD HO, HARIPIN CHANDRA, MATTHEW R. MACDONALD, MEILIANG WANG
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Publication number: 20210334445Abstract: Methods, systems, and apparatus, including computer programs encoded on computer storage media, for generating a computer chip placement. One of the methods includes obtaining netlist data for a computer chip; and generating a computer chip placement, comprising placing a respective macro node at each time step in a sequence comprising a plurality of time steps, the placing comprising, for each time step: generating an input representation for the time step; processing the input representation using a node placement neural network having a plurality of network parameters, wherein the node placement neural network is configured to process the input representation in accordance with current values of the network parameters to generate a score distribution over a plurality of positions on the surface of the computer chip; and assigning the macro node to be placed at the time step to a position from the plurality of positions using the score distribution.Type: ApplicationFiled: April 22, 2021Publication date: October 28, 2021Inventors: Anna Darling Goldie, Azalia Mirhoseini, Ebrahim Songhori, Wenjie Jiang, Shen Wang, Roger David Carpenter, Young-Joon Lee, Mustafa Nazim Yazgan, Chian-min Richard Ho, Quoc V. Le, James Laudon, Jeffrey Adgate Dean, Kavya Srinivasa Setty, Omkar Pathak
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Patent number: 11139162Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.Type: GrantFiled: September 24, 2019Date of Patent: October 5, 2021Assignee: Versum Materials US, LLCInventors: Mark Leonard O'Neill, Manchao Xiao, Xinjian Lei, Richard Ho, Haripin Chandra, Matthew R. MacDonald, Meiliang Wang
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Patent number: 11100266Abstract: Methods, systems, and apparatus, including computer programs encoded on computer storage media, for generating a computer chip floorplan. One of the methods includes obtaining netlist data for a computer chip; and generating a computer chip floorplan, comprising placing a respective node at each time step in a sequence comprising a plurality of time steps, the placing comprising, for each time step: generating an input representation for the time step; processing the input representation using a node placement neural network having a plurality of network parameters, wherein the node placement neural network is configured to process the input representation in accordance with current values of the network parameters to generate a score distribution over a plurality of positions on the surface of the computer chip; and assigning the node to be placed at the time step to a position from the plurality of positions using the score distribution.Type: GrantFiled: June 1, 2020Date of Patent: August 24, 2021Assignee: Google LLCInventors: Chian-min Richard Ho, William Hang, Mustafa Nazim Yazgan, Anna Darling Goldie, Jeffrey Adgate Dean, Azalia Mirhoseini, Emre Tuncer, Ya Wang, Anand Babu
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Publication number: 20210140040Abstract: Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using a compound having Formula I or II described herein.Type: ApplicationFiled: October 30, 2020Publication date: May 13, 2021Applicant: Versum Materials US, LLCInventors: JIANHENG LI, XINJIAN LEI, ROBERT G. RIDGEWAY, RAYMOND N. VRTIS, MANCHAO XIAO, RICHARD HO
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Patent number: 10899500Abstract: Described herein is an FCVD process for depositing a silicon-containing film from at least one alkoxysilylamine precursor having the following Formulae A and B: wherein R1 and R4 are independently selected from a linear or branched C1 to C10 alkyl group, a C3 to C12 alkenyl group, a C3 to C12 alkynyl group, a C4 to C10 cyclic alkyl group, and a C6 to C10 aryl group and wherein R2, R3, R4, R5, and R6 are independently selected from the group consisting of hydrogen, a linear or branched C1 to C10 alkyl group, a C2 to C12 alkenyl group, a C2 to C12 alkynyl group, a C4 to C10 cyclic alkyl, a C6 to C10 aryl group, and a linear or branched C1 to C10 alkoxy group.Type: GrantFiled: March 15, 2019Date of Patent: January 26, 2021Assignee: Versum Materials US, LLCInventors: Manchao Xiao, Ronald Martin Pearlstein, Richard Ho, Daniel P. Spence, Xinjian Lei
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Publication number: 20200364389Abstract: Methods, systems, and apparatus, including computer programs encoded on computer storage media, for generating a computer chip floorplan. One of the methods includes obtaining netlist data for a computer chip; and generating a computer chip floorplan, comprising placing a respective node at each time step in a sequence comprising a plurality of time steps, the placing comprising, for each time step: generating an input representation for the time step; processing the input representation using a node placement neural network having a plurality of network parameters, wherein the node placement neural network is configured to process the input representation in accordance with current values of the network parameters to generate a score distribution over a plurality of positions on the surface of the computer chip; and assigning the node to be placed at the time step to a position from the plurality of positions using the score distribution.Type: ApplicationFiled: June 1, 2020Publication date: November 19, 2020Inventors: Chian-min Richard Ho, William Hang, Mustafa Nazim Yazgan, Anna Darling Goldie, Jeffrey Adgate Dean, Azalia Mirhoseini, Emre Tuncer, Ya Wang, Anand Babu
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Publication number: 20200308416Abstract: Described herein are compositions and methods for forming silicon oxide films. In one aspect, the film is deposited from at least one silicon precursor compound, wherein the at least one silicon precursor compound is selected from the following Formulae A and B: as defined herein.Type: ApplicationFiled: June 15, 2020Publication date: October 1, 2020Applicant: Versum Materials US, LLCInventors: Xinjian Lei, Meiliang Wang, Matthew R. MacDonald, Richard Ho, Manchao Xiao, Suresh Kalpatu Rajaraman
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Patent number: 10703915Abstract: Described herein are compositions and methods for forming silicon oxide films. In one aspect, the film is deposited from at least one silicon precursor compound, wherein the at least one silicon precursor compound is selected from the following Formulae A and B: as defined herein.Type: GrantFiled: September 8, 2017Date of Patent: July 7, 2020Assignee: VERSUM MATERIALS US, LLCInventors: Xinjian Lei, Meiliang Wang, Matthew R. MacDonald, Richard Ho, Manchao Xiao, Suresh Kalpatu Rajaraman
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Patent number: 10699043Abstract: Methods, systems, and apparatus, including computer programs encoded on computer storage media, for generating a computer chip floorplan. One of the methods includes obtaining netlist data for a computer chip; and generating a computer chip floorplan, comprising placing a respective node at each time step in a sequence comprising a plurality of time steps, the placing comprising, for each time step: generating an input representation for the time step; processing the input representation using a node placement neural network having a plurality of network parameters, wherein the node placement neural network is configured to process the input representation in accordance with current values of the network parameters to generate a score distribution over a plurality of positions on the surface of the computer chip; and assigning the node to be placed at the time step to a position from the plurality of positions using the score distribution.Type: GrantFiled: December 4, 2019Date of Patent: June 30, 2020Assignee: Google LLCInventors: Chian-min Richard Ho, William Hang, Mustafa Nazim Yazgan, Anna Darling Goldie, Jeffrey Adgate Dean, Azalia Mirhoseini, Emre Tuncer, Ya Wang, Anand Babu
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Publication number: 20200175216Abstract: Methods, systems, and apparatus, including computer programs encoded on computer storage media, for generating a computer chip floorplan. One of the methods includes obtaining netlist data for a computer chip; and generating a computer chip floorplan, comprising placing a respective node at each time step in a sequence comprising a plurality of time steps, the placing comprising, for each time step: generating an input representation for the time step; processing the input representation using a node placement neural network having a plurality of network parameters, wherein the node placement neural network is configured to process the input representation in accordance with current values of the network parameters to generate a score distribution over a plurality of positions on the surface of the computer chip; and assigning the node to be placed at the time step to a position from the plurality of positions using the score distribution.Type: ApplicationFiled: December 4, 2019Publication date: June 4, 2020Inventors: Chian-min Richard Ho, William Hang, Mustafa Nazim Yazgan, Anna Darling Goldie, Jeffrey Adgate Dean, Azalia Mirhoseini, Emre Tuncer, Ya Wang, Anand Babu
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Publication number: 20200051811Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.Type: ApplicationFiled: September 24, 2019Publication date: February 13, 2020Applicant: Versum Materials US, LLCInventors: Mark Leonard O'Neill, Manchao Xiao, Xinjian Lei, Richard Ho, Haripin Chandra, Matthew R. MacDonald, Meiliang Wang
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Publication number: 20200040192Abstract: Described herein are compositions and methods for forming silicon oxide films. In one aspect, the film is deposited from at least one silicon precursor compound, wherein the at least one silicon precursor compound is selected from the following Formulae A and B: as defined herein.Type: ApplicationFiled: September 8, 2017Publication date: February 6, 2020Applicant: Versum Materials US, LLCInventors: Xinjian Lei, Meiliang Wang, Matthew R. MacDonald, Richard Ho, Manchao Xiao, Suresh Kalpatu Rajaraman
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Patent number: 10460929Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.Type: GrantFiled: April 5, 2017Date of Patent: October 29, 2019Assignee: VERSUM MATERIALS US, LLCInventors: Mark Leonard O'Neill, Manchao Xiao, Xinjian Lei, Richard Ho, Haripin Chandra, Matthew R. MacDonald, Meiliang Wang
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Patent number: 10453675Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.Type: GrantFiled: September 11, 2014Date of Patent: October 22, 2019Assignee: VERSUM MATERIALS US, LLCInventors: Mark Leonard O'Neill, Manchao Xiao, Xinjian Lei, Richard Ho, Haripin Chandra, Matthew R. MacDonald, Meiliang Wang
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Publication number: 20190292658Abstract: Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using a compound having Formula I or II described herein.Type: ApplicationFiled: December 21, 2016Publication date: September 26, 2019Inventors: Jianheng Li, Xinjian Lei, Robert Gordon Ridgeway, Raymond Nicholas Vrtis, Manchao Xiao, Richard Ho
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Publication number: 20190225377Abstract: Described herein is an FCVD process for depositing a silicon-containing film from at least one alkoxysilylamine precursor having the following Formulae A and B: wherein R1 and R4 are independently selected from a linear or branched C1 to C10 alkyl group, a C3 to C12 alkenyl group, a C3 to C12 alkynyl group, a C4 to C10 cyclic alkyl group, and a C6 to C10 aryl group and wherein R2, R3, R4, R5, and R6 are independently selected from the group consisting of hydrogen, a linear or branched C1 to C10 alkyl group, a C2 to C12 alkenyl group, a C2 to C12 alkynyl group, a C4 to C10 cyclic alkyl, a C6 to C10 aryl group, and a linear or branched C1 to C10 alkoxy group.Type: ApplicationFiled: March 15, 2019Publication date: July 25, 2019Applicant: Versum Materials US, LLCInventors: Manchao Xiao, Ronald Martin Pearlstein, Richard Ho, Daniel P. Spence, Xinjian Lei
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Patent number: 10294250Abstract: Organoaminosilanes, such as without limitation di-iso-propylaminosilane (DIPAS), are precursors for the deposition of silicon containing films such as silicon-oxide and silicon-nitride films. Described herein are methods to make organoaminosilane compounds, or other compounds such as organoaminodisilanes and organoaminocarbosilanes, via the catalytic hydrosilylation of an imine by a silicon source comprising a hydridosilane.Type: GrantFiled: March 30, 2017Date of Patent: May 21, 2019Assignee: VERSUM MATERIALS US, LLCInventors: Manchao Xiao, Matthew R. MacDonald, Richard Ho, Xinjian Lei
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Patent number: 10279959Abstract: Described herein are alkoxysilylamine precursors having the following Formulae A and B: wherein R1 and R4 are independently selected from a linear or branched C1 to C10 alkyl group, a C3 to C12 alkenyl group, a C3 to C12 alkynyl group, a C4 to C10 cyclic alkyl group, and a C6 to C10 aryl group and wherein R2, R3, R4, R5, and R6 are independently selected from the group consisting of hydrogen, a linear or branched C1 to C10 alkyl group, a C2 to C12 alkenyl group, a C2 to C12 alkynyl group, a C4 to C10 cyclic alkyl, a C6 to C10 aryl group, and a linear or branched C1 to C10 alkoxy group. Also described herein are deposition processes using at least one precursor have Formulae A and/or B described herein.Type: GrantFiled: December 4, 2013Date of Patent: May 7, 2019Assignee: VERSUM MATERIALS US, LLCInventors: Manchao Xiao, Ronald Martin Pearlstein, Richard Ho, Daniel P. Spence, Xinjian Lei
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Publication number: 20180127592Abstract: Described herein are compositions and methods for forming silicon oxide films. In one aspect, the film is deposited from at least one silicon precursor compound, wherein the at least one silicon precursor compound is selected from the following Formulae A and B: as defined herein.Type: ApplicationFiled: September 8, 2017Publication date: May 10, 2018Applicant: Versum Materials US, LLCInventors: Xinjian Lei, Meiliang Wang, Matthew R. MacDonald, Richard Ho, Manchao Xiao, Suresh Kalpatu Rajaraman