Abstract: A structure is disclosed, comprising: a first field effect transistor, FET, comprising a first source terminal, a first drain terminal, a first layer or body of semiconductive material arranged to provide a first semiconductive channel connecting the first source terminal to the first drain terminal, and a gate terminal arranged with respect to the first semiconductive channel such that a conductivity of the first semiconductive channel may be controlled by application of a voltage to the gate terminal; and a second FET comprising a second source terminal, a second drain terminal, a second layer or body of semiconductive material arranged to provide a second semiconductive channel connecting the second source terminal to the second drain terminal, and the gate terminal, the second conductive channel being arranged with respect to the gate terminal such that a conductivity of the second channel may be controlled by application of a voltage to the gate terminal.

Abstract: An automated carrier system is disclosed for moving objects to be processed. The automated carrier system includes a discontinuous plurality of track sections on which an automated carrier may be directed to move, and the automated carrier includes a base structure on which an object may be supported, and at least two wheels assemblies being pivotally supported on the base structure for pivoting movement from a first position to a second position to effect a change in direction of movement of the carrier.

Abstract: A neurofeedback system includes an EEG apparatus, a presentation apparatus and a controller. The controller is configured to: (i) cause the presentation apparatus to display an overlaid image to the user that comprises a first image flickering at a first frequency and a second image flickering at a second frequency different than the first frequency, the first image being an affective distractor stimulus image and the second image being a task-relevant stimulus image, (ii) receive from the EEG apparatus a number of first steady-state visual evoked potential (SSVEP) signals generated in response the first image of the overlaid image and a number of second SSVEP signals generated in response the second image of the overlaid image, and (iii) calculate feedback indicative of how much attention of the was user allocated to the task-relevant stimulus image versus how much attention of the user was allocated to the affective distractor stimulus image.

Abstract: A storage, retrieval and processing system for processing objects is disclosed. The storage, retrieval and processing system includes a plurality of storage bins providing storage of a plurality of objects, where the plurality of storage bins is in communication with a retrieval conveyance system, a programmable motion device in communication with the retrieval conveyance system for receiving the storage bins from the plurality of bins, where the programmable motion device includes an end effector for grasping and moving a selected object out of a selected storage bin, and a movable carriage for receiving the selected object from the end effector of the programmable motion device, and for carrying the selected object to one of a plurality of destination bins.

Abstract: A transistor is disclosed, comprising: a layer of semiconductor material comprising a first portion, a second portion, and a third portion connecting the first portion to the second portion and providing a semiconductive channel between the first portion and the second portion; a conductive first terminal covering and in electrical contact with said first portion of the layer of semiconductor material; a conductive second terminal covering and in electrical contact with said second portion of the layer of semiconductor material; a conductive gate terminal comprising a first overlapping portion covering at least part of the first terminal, and a channel portion covering the third portion of the layer of semiconductor material; and a layer of a first dielectric material, having a first dielectric constant, arranged between the first overlapping portion and the first terminal, and between the channel portion of the gate terminal and the third portion of the layer of semiconductor material.

Abstract: The invention relates to a thermode for connecting at least two components, comprising a tip having a body portion with at least two contact surface portions connected to and spaced apart from one another by a recess configured to receive a portion of one of the at least two components; and a support portion having at least one supporting surface portion configured to support a further component (being the other of the at least two components, wherein the contact surface portions and the supporting surface portion are configured to receive the at least two components between them and wherein one or both of the contact surface portions and the supporting surface portion are moveable relative to and towards one another to exert heat and/or pressure on the at least two components located between the contact surface portions and the supporting portion.

Abstract: A flexible electronic structure for bonding with an external circuit.

Abstract: An electronic circuit assembly comprises: a first electronic circuit module; a second electronic circuit module; and a quantity of anisotropic conductive adhesive, ACA, comprising a plurality of electrically conductive particles and an electrically non-conductive adhesive, arranged to bond the first electronic circuit module to the second electronic circuit module.

Abstract: A structure is disclosed, comprising: a first field effect transistor, FET, comprising a first source terminal, a first drain terminal, a first layer or body of semiconductive material arranged to provide a first semiconductive channel connecting the first source terminal to the first drain terminal, and a gate terminal arranged with respect to the first semiconductive channel such that a conductivity of the first semiconductive channel may be controlled by application of a voltage to the gate terminal; and a second FET comprising a second source terminal, a second drain terminal, a second layer or body of semiconductive material arranged to provide a second semiconductive channel connecting the second source terminal to the second drain terminal, and the gate terminal, the second conductive channel being arranged with respect to the gate terminal such that a conductivity of the second channel may be controlled by application of a voltage to the gate terminal.

Abstract: A signal measuring apparatus comprising: signal circuitry configured to receive an input signal to be measured; and memory circuitry coupled to the signal circuitry and configured to store information representing a magnitude of a voltage or a current of the input signal; wherein the memory circuitry comprises a first memory cell having a material which is arranged to switch from a first material state to a second material state in response to a first switching signal being applied thereto, wherein the first memory cell is tuned to a first value for the first switching signal so that a current or voltage with a magnitude at or above the first value will cause the material of the first memory cell to switch from the first material state to second material state; wherein the apparatus is configured to apply a measurement signal indicative of the input signal to the first memory cell for switching the material of the first memory cell from the first material state to the second material state in dependence on a

Abstract: A Schottky diode comprises: a first electrode; a second electrode; and a body of semiconductive material connected to the first electrode at a first interface and connected to the second electrode at a second interface, wherein the first interface comprises a first planar region lying in a first plane and the first electrode has a first projection onto the first plane in a first direction normal to the first plane, the second interface comprises a second planar region lying in a second plane and the second electrode has a second projection onto the first plane in said first direction, at least a portion of the second projection lies outside the first projection, said second planar region is offset from the first planar region in said first direction, and one of the first interface and the second interface provides a Schottky contact.

Abstract: An electronic circuit comprises a first resistor (1) and a second resistor (2). The first resistor comprises: a first sheet (10) of resistive material; and a first pair (11, 12) of conductive contacts, each arranged in electrical contact with the first sheet, and arranged such that a shortest resistive path in the first sheet between the first pair of contacts passes through the first sheet and has a length equal to a thickness (LI) of the first sheet. The second resistor comprises: a second sheet (20) of resistive material; and a second pair (21, 22) of conductive contacts, each arranged in electrical contact with the second sheet, and arranged such that a shortest resistive path (L2) in the second sheet between the second pair of contacts passes along at least a portion of a length of the second sheet.

Abstract: One exemplary aspect relates to a process and apparatus for selectively changing adhesion strength between a flexible substrate and a carrier at specific locations to facilitate shipping and subsequent removal of the flexible substrate from the carrier. The process includes providing a flexible substrate comprising a plurality of integrated circuits thereon providing a carrier for the flexible substrate and adhering the flexible substrate to the carrier by creating an interface between the flexible substrate and the carrier. The process further includes changing the adhesion force between the flexible substrate and the carrier at selected locations by non-uniform treatment of the interface between the flexible substrate and the carrier with an electromagnetic radiation source (e.g. a laser, flashlamp, high powered LED, an infrared radiation source or the like) so as to decrease or increase the adhesion force between a portion of the flexible substrate and the carrier at the selected location.

Abstract: A Schottky diode comprises: a first electrode; a second electrode; and a body of semiconductive material connected to the first electrode at a first interface and connected to the second electrode at a second interface, wherein the first interface comprises a first planar region lying in a first plane and the first electrode has a first projection onto the first plane in a first direction normal to the first plane, the second interface comprises a second planar region lying in a second plane and the second electrode has a second projection onto the first plane in said first direction, at least a portion of the second projection lies outside the first projection, said second planar region is offset from the first planar region in said first direction, and one of the first interface and the second interface provides a Schottky contact.

Abstract: The present invention relates to a method of connecting circuit elements and a corresponding system for connecting circuit elements. The method includes providing a plurality of flexible circuit elements on a carrier element; forming a connecting structure. The formed connecting structure includes at least two contact points; and operative connections between each of the plurality of flexible circuit elements and the at least two contact points. The method further includes severing the operative connection between at least one of the plurality of flexible circuit elements and the at least two contact points.

Abstract: The present invention provides processes for manufacturing a plurality of discrete integrated circuits (ICs) on a carrier, the process comprising the steps of: providing a carrier for a flexible substrate; depositing a flexible substrate of uniform thickness on said carrier; removing at least a portion of the thickness of the flexible substrate from at least a portion of the IC connecting areas to form channels in the flexible substrate and a plurality of IC substrate units spaced apart from one another on the carrier by said channels; forming an integrated circuit on at least one of the IC substrate units.

Abstract: A method of manufacturing an electronic circuit (or circuit module) (100) is disclosed. The electronic circuit comprises a transistor (1) and a resistor (2), the transistor comprising a source terminal (11), a drain terminal (12), a gate terminal (13), and a first body (10) of material providing a controllable semi-conductive channel between the source and drain terminals, and the resistor comprises a first resistor terminal (21), a second resistor terminal (22), and a second body (20) of material providing a resistive current path between the first resistor terminal and the second resistor terminal. The method comprises: forming the first body (10); and forming the second body (20), wherein the first body comprises a first quantity (100) of a metal oxide and the second body comprises a second quantity (200) of said metal oxide. Corresponding electronic circuits are disclosed.

Abstract: The present invention provides processes for manufacturing a plurality of discrete integrated circuits (ICs) on a carrier, the process comprising the steps of: providing a carrier for a flexible substrate; depositing a flexible substrate of uniform thickness on said carrier; removing at least a portion of the thickness of the flexible substrate from at least a portion of the IC connecting areas to form channels in the flexible substrate and a plurality of IC substrate units spaced apart from one another on the carrier by said channels; forming an integrated circuit on at least one of the IC substrate units.

Abstract: A method of manufacturing an electronic circuit comprising a first device and at least a second device is disclosed. The first device comprises a first terminal, a second terminal, and a first body of semiconductive material providing a semiconductive path between the first and second terminals, and the second device comprises a third terminal, a fourth terminal, and a second body of material providing a resistive or semiconductive current path between the third terminal and the fourth terminal. The method comprises: forming the first body; and forming the second body, wherein the first body comprises a first quantity of a metal oxide and the second body comprises a second quantity of said metal oxide. Corresponding electronic circuits are disclosed.

Abstract: A thin-film resistor and a method for fabricating a thin-film resistor are provided.