Abstract: There is provided a composition for forming an EUV resist underlayer film which shows a good resit form. A resist underlayer film-forming composition for EUV lithography, including: polysiloxane (A) containing a hydrolyzed condensate of hydrolyzable silane (a); and hydrolyzable silane compound (b) having a sulfonamide structure, a carboxylic acid amide structure, a urea structure, or an isocyanuric acid structure. A resist underlayer film-forming composition for EUV lithography, including: polysiloxane (B) containing a hydrolyzed condensate of hydrolyzable silane (a) and hydrolyzable silane compound (b) having a sulfonamide structure, a carboxylic acid amide structure, a urea structure, or an isocyanuric acid structure. The polysiloxane (A) is preferably a co-hydrolyzed condensate of a tetraalkoxysilane, an alkyltrialkoxysilane and an aryltrialkoxysilane.

Abstract: A resist underlayer film forming composition for lithography, includes: a polymer including a structure of formula (1) below at a terminal of a polymer chain; a cross-linking agent; a compound that promotes a cross-linking reaction; and an organic solvent: (where R1, R2, and R3 are each independently a hydrogen atom, a linear or branched hydrocarbon group having a carbon atom number of 1 to 13, or a hydroxy group; at least one of R1, R2, and R3 is the hydrocarbon group; m and n are each independently 0 or 1; and a main chain of the polymer is bonded to a methylene group when n is 1 and bonded to a group represented by —O— when n is 0).

Abstract: A composition for forming a resist underlayer film having heat resistance, which is used for a lithography process of semiconductor device production. A resist underlayer film forming composition including a polymer having a unit structure of Formula (1): Preferably, both rings A and B are benzene rings, n1, n2, and n3 are 0, R4 and R6 are hydrogen atoms, or R5 is naphthyl. A method for producing a semiconductor device including: forming an underlayer film by use of the resist underlayer film forming composition onto a semiconductor substrate; forming a hard mask on the underlayer film; forming a resist film on the hard mask; forming a resist pattern by irradiation with light or an electron beam and development; etching the hard mask using the resist pattern; etching the underlayer film by use of the patterned hard mask; and processing the semiconductor substrate by use of the patterned underlayer film.

Abstract: A composition for forming a resist underlayer film for lithography, including a polymer having a repeating structural unit of Formula (1): R1 is a hydrogen atom or a methyl group and Q1 is a group of Formula (2) or Formula (3): (wherein R2, R3, R5, and R6 are independently a hydrogen atom or a linear or branched hydrocarbon group having a carbon atom number of 1 to 4, R4 is a hydrogen atom or a methyl group, R7 is a linear or branched hydrocarbon group having a carbon atom number of 1 to 6, a C1-4 alkoxy group, a C1-4 alkylthio group, a halogen atom, a cyano group, or a nitro group, w1 is an integer of 0 to 3, w2 is an integer of 0 to 2, and x is an integer of 0 to 3), and v1 and v2 are independently 0 or 1; and an organic solvent.

Abstract: A composition for forming an antistatic film, includes: an oligomer compound of Formula (1A): (where R1 is a hydrogen atom or a group of Formula (2), each of R2 and R3 is independently a hydrogen atom, a group of Formula (3), or a group of Formula (4), at least one of the plurality of Rs is a sulfo group, a and b are positive integers satisfying 2?(a+b)?6; and each of a plurality of xs is independently an integer from 0 to 4): (where n is an integer satisfying 1?n<(a+b+4); a, b, a plurality of Rs, and x are the same as those in Formula (1A); and each of a plurality of ys is independently an integer from 0 to 5); and water.

Abstract: A resist underlayer film-forming composition for forming a resist underlayer film having both dry etching resistance and heat resistance. A resist underlayer film-forming composition comprising a polymer containing a unit structure of Formula (1): In Formula (1), R3 is a hydrogen atom, and both n1 and n2 are 0. A method for producing a semiconductor device comprising the steps of: forming an underlayer film on a semiconductor substrate using the resist underlayer film-forming composition; forming a hard mask on the underlayer film; further forming a resist film on the hard mask; forming a resist pattern by irradiation with light or electron beams and development; etching the hard mask using the resist pattern; etching the underlayer film using the hard mask patterned; and fabricating the semiconductor substrate using the patterned underlayer film.

Abstract: It is aimed to enhance adhesiveness between a resist pattern formed on a resist underlayer film and to reduce an undercut of the resist pattern. An additive for a resist underlayer film-forming composition, including: a polymer having a structural unit of Formula (1): (where R1 is a hydrogen atom or a methyl group; L is a divalent linking group; X is an acyloxy group having an amino group protected with a tert-butoxycarbonyl group or a nitrogen heterocycle protected with a tert-butoxycarbonyl group).

Abstract: A resist overlayer film composition for lithography from which a resist overlayer film is formed. A resist overlayer film forming composition including a benzene compound having at least one amino group. A resist may be an EUV resist or an electron beam resist. The benzene compound may have at least one amino group and at least one alkyl group, one or two amino groups and one to four alkyl groups, or may be a compound of Formula (1): where R1 to R5 are independently a hydrogen atom, a C1-10 alkyl group such as methyl, ethyl or isopropyl, or an amino group.

Abstract: A novel diarylamine novolac resin such as a phenylnaphthylamine novolac resin, and further a resist underlayer film-forming composition in which the resin is used in a lithography process for manufacturing a semiconductor device. A polymer including a unit structure (A) of Formula (1): (in Formula (1), each of Ar1 and Ar2 is a benzene ring or a naphthalene ring). A method for manufacturing a semiconductor device, including: forming an underlayer film on a semiconductor substrate with the resist underlayer film-forming composition; forming a hardmask on the underlayer film; forming a resist film on the hardmask; forming a resist pattern by irradiation with light or an electron beam followed by development; etching the hardmask with the resist pattern; etching the underlayer film with the hardmask thus patterned; and processing the semiconductor substrate with the underlayer film thus patterned.

Abstract: A resist underlayer film forming composition for EUV lithography, comprising: as a silane, a hydrolyzable silane, a hydrolyzate of the hydrolyzable silane, a hydrolysis condensate of the hydrolyzable silane, or a mixture of any of the hydrolyzable silane, the hydrolyzate, and the hydrolysis condensate, wherein the hydrolyzable silane includes a combination of tetramethoxysilane, an alkyltrimethoxysilane, and an aryltrialkoxysilane, and the aryltrialkoxysilane is represented by formula (1): (R2)n2—R1—(CH2)n1—Si(X)3??Formula (1) In formula (1), R1 is an aromatic ring consisting of a benzene ring or a naphthalene ring or a ring including an isocyanuric acid structure, R2 is a substituent replacing a hydrogen atom on the aromatic ring and is a halogen atom or a C1-10 alkoxy group, and X is a C1-10 alkoxy group, a C2-10 acyloxy group, or a halogen group.

Abstract: There is provided a resist underlayer film composition for EUV lithography that is used in a device production process using EUV lithography, reduces adverse effects of EUV, and is effective for obtaining a good resist pattern, and to a method for forming a resist pattern that uses the resist underlayer film composition for EUV lithography. A resist underlayer film-forming composition for EUV lithography, including: a polymer having a repeating unit structure of formula (1): [where each of A1, A2, A3, A4, A5, and A6 is a hydrogen atom, a methyl group, or an ethyl group; X1 is formula (2), formula (3), formula (4), or formula (0): Q is formula (5) or formula (6): and a solvent. A resist underlayer film-forming composition for EUV lithography, comprising: the polymer having the repeating unit structure of formula (1); a crosslinkable compound; and a solvent.

Abstract: There is provided a composition for forming a resist underlayer film that has a high selectivity of dry etching rate even though the composition contains an aromatic ring such as a benzene ring, and that is useful in lowering LER that presents a large problem in EUV (wavelength 13.5 nm) lithography. Moreover, another object is to obtain a composition for forming a resist underlayer film that provides a resist pattern having a desired shape on the resist underlayer film. A resist underlayer film forming composition for lithography which includes a polymer and a solvent, wherein in the polymer, diphenyl sulfone or a derivative thereof is introduced in the main chain of the polymer through an ether bond.

Abstract: A method for producing a semiconductor device includes the steps of: applying a composition for forming a resist underlayer film for EUV lithography including a novolac resin containing a halogen atom onto a substrate having a film to be fabricated for forming a transferring pattern and baking the composition so as to form a resist underlayer film for EUV lithography; and applying a resist for EUV lithography onto the resist underlayer film for EUV lithography, irradiating, with EUV through a mask, the resist underlayer film for EUV lithography and a film of the resist for EUV lithography on the resist underlayer film, developing the film of the resist for EUV lithography, and transferring an image formed in the mask onto the substrate by dry etching so as to form an integrated circuit device.

Abstract: Disclosed is a developer, one that does not cause pattern collapse during the formation process, for the formation of a fine pattern and a method for pattern formation using the developer. A developer used in a lithography process includes a polymer for forming a dry-etching mask and an organic solvent. The polymer is preferably a curable resin different from a curable resin forming a resist film. The developer is preferably used after exposure of the resist film. The organic solvent in the developer is preferably butyl acetate or a mixed solvent of butyl acetate and an alcohol, or 2-pentanone or a mixed solvent of 2-pentanone and an alcohol. Also disclosed is a method for producing a semiconductor device.

Abstract: A resist underlayer film forming composition for lithography, includes: a polymer including a structure of formula (1) below at a terminal of a polymer chain; a cross-linking agent; a compound that promotes a cross-linking reaction; and an organic solvent: (where R1, R2, and R3 are each independently a hydrogen atom, a linear or branched hydrocarbon group having a carbon atom number of 1 to 13, or a hydroxy group; at least one of R1, R2, and R3 is the hydrocarbon group; m and n are each independently 0 or 1; and a main chain of the polymer is bonded to a methylene group when n is 1 and bonded to a group represented by —O— when n is 0).

Abstract: There is provided a resist underlayer film forming composition for an electron beam lithography that is used in a device production process using electron beam lithography and is effective for reducing adverse effects caused by an electron beam to obtain a favorable resist pattern, and a method of forming a resist pattern using the resist underlayer film forming composition for electron beam lithography. The resist underlayer film forming composition for an electron beam lithography comprises a polymer compound having a repeating unit structure that contains a halogen atom, and a solvent, and the composition is applied in a form of film between a film to be processed for forming a transferring pattern on a substrate and a resist film for an electron beam lithography, and used for manufacturing a semiconductor device. The polymer compound preferably contains at least 10% by mass of a halogen atom.

Abstract: There is provided a novel material used for solar cells that can contribute to the improvement in maximum output of solar cells. A film-forming material for forming a light-collecting film on a transparent electrode of a solar cell, including an aromatic group-containing organic polymer compound (A), wherein the film-forming material exhibits an index of refraction of 1.5 to 2.0 at a wavelength of 633 nm and a transmittance of 95% or more with respect to light having a wavelength of 400 nm, and a solar cell obtained by coating a cured film made from the film-forming material on a surface of a transparent electrode.

Abstract: There is provided a composition for forming a resist underlayer film that has a high selectivity of dry etching rate even though the composition contains an aromatic ring such as a benzene ring, and that is useful in lowering LER that presents a large problem in EUV (wavelength 13.5 nm) lithography. Moreover, another object is to obtain a composition for forming a resist underlayer film that provides a resist pattern having a desired shape on the resist underlayer film. A resist underlayer film forming composition for lithography which includes a polymer and a solvent, wherein in the polymer, diphenyl sulfone or a derivative thereof is introduced in the main chain of the polymer through an ether bond.

Abstract: There is provided a composition for forming an EUV resist overlayer film that is used in an EUV lithography process, that does not intermix with the EUV resist, that blocks unfavorable exposure light for EUV exposure, for example, UV light and DUV light and selectively transmits EUV light alone, and that can be developed with a developer after exposure. A composition for forming an EUV resist overlayer film used in an EUV lithography process including a resin containing a naphthalene ring in a main chain or in a side chain and a solvent, in which the resin may include a hydroxy group, a carboxy group, a sulfo group, or a monovalent organic group having at least one of these groups as a hydrophilic group.

Abstract: Disclosed is a lithographic composition for forming a resist underlayer film, which can be used as a lower layer antireflection film by which an exposure light striking on a photoresist formed on a semiconductor substrate is inhibited from being reflected from the substrate in a lithographic process of manufacturing semiconductor equipment, a planarization film for flattening a semiconductor substrate having a rugged surface used in order to fill in a hole formed on the semiconductor substrate, a film which prevents a photoresist from being contaminated by a substance generated from a semiconductor substrate during heating/burning, or the like.