Abstract: An additive for a resist underlayer film-forming composition containing a copolymer having structural units of Formulae (1) to (4), and a resist underlayer film-forming composition containing the additive: (where each R1 is independently a hydrogen atom or methyl group, Ar is arylene group, Pr is a protecting group or a hydrogen atom, X is a direct bond or a —C(?O)O—R2— group, R2 constituting the —C(?O)O—R2— group is a C1-3 alkylene group, the alkylene group is bonded to a sulfur atom, R3 is a hydrogen atom, methyl group, methoxy group, or halogeno group, R4 is a C1-3 alkyl group in which at least one hydrogen atom is substituted with a fluoro group, and Z is an organic group having 4 to 7-membered ring lactone skeleton, adamantane skeleton, or norbornane skeleton).

Abstract: A resist underlayer film forming composition for lithography for forming a resist underlayer film that can be used as a hard mask, including: a hydrolyzable silane, a hydrolysis product thereof, a hydrolysis condensate thereof, or a combination thereof as a silane, wherein the hydrolyzable silane includes at least one hydrolyzable silane selected from the group made of hydrolyzable silanes of Formula (1), Formula (2), and Formula (3): A method for producing a semiconductor device including: forming an organic underlayer film on a semiconductor substrate; applying the resist underlayer film forming composition onto the organic underlayer film and baking the composition to form a resist underlayer film; applying a resist film forming composition onto the resist underlayer film to form a resist film; exposing the resist film to light; developing the resist film after exposure to obtain a resist pattern; and etching in this order.

Abstract: There is provided a mask blank including on a substrate: a thin film for forming a transfer pattern; a resist underlayer formed on the thin film and made of a resist underlayer composition containing a polymer having a unit structure having a lactone ring and a unit structure having a hydroxyl group; a resist film formed on the resist underlayer film and made of a resist composition; and a mixed film formed so as to be interposed between the resist underlayer film and the resist film and made of a mixed component containing the resist underlayer composition and the resist composition.

Abstract: This composition for forming an extreme-ultraviolet (EUV) or electron-beam upper-layer resist film including (a) a polymer (P) and (b) a solvent, the solvent containing 1 to 13 mass % of a C4-12 ketone compound with respect to the entire solvent, is used in the lithography process of a procedure for manufacturing a semiconductor device. Without needing to be intermixed with a resist, and particularly on the occasion of EUV exposure, the composition for forming an EUV or electron-beam upper-layer resist film blocks undesirable exposure light, e.g., ultraviolet (UV) or deep ultraviolet (DUV) rays, and selectively transmits only the EUV rays, and can be developed using a developing solution after exposure.

Abstract: There is provided a polymer-containing coating liquid which is applied to a resist pattern and which is used in place of a conventional rinsing liquid. A coating liquid that is applied to a resist pattern comprising a polymer having a structural unit of Formula (1): (wherein R1 is a C1-12 organic group, and X is an organic group of Formula (2): (wherein R2 and R3 are each independently a linear or branched alkylene group having a carbon atom number of 1 to 3, R2 is bonded to an oxygen atom in Formula (1), R4 is a C1-4 alkoxy group, an allyloxy group, or a hydroxy group, and p is 0, 1, or 2)), and a solvent containing water and/or alcohols.

Abstract: A composition to be applied onto a resist pattern comprising a polysiloxane obtained by hydrolytically condensing a hydrolyzable silane and a carboxylic ester solvent or an ether solvent, wherein the hydrolyzable silane includes a vinyl group- or (meth)acryloxy group-containing hydrolyzable silane. A hydrolyzable silane includes the vinyl group- or (meth)acryloxy group-containing hydrolyzable silane at a content of 20 to 100 mol % in the total hydrolyzable silane. A method for producing a semiconductor device, the method includes: a step (1) of applying a resist onto a substrate; a step (2) of exposing a resist film to light and subsequently developing the resist film to form a resist pattern; a step (3) of applying the composition as described above onto the resist pattern during the development or after the development; and a step (4) of removing the resist pattern by etching to reverse the pattern.

Abstract: Resist underlayer film-forming composition for forming resist underlayer film with high dry etching resistance, wiggling resistance and exerts good flattening property and embedding property for uneven parts, including resin obtained by reacting organic compound A including aromatic ring and aldehyde B having at least two aromatic hydrocarbon ring groups having phenolic hydroxy group and having structure wherein the aromatic hydrocarbon ring groups are bonded through tertiary carbon atom. The aldehyde B may be compound of Formula (1): The obtained resin may have a unit structure of Formula (2): Ar1 and Ar2 each are C6-40 aryl group. The organic compound A including aromatic ring may be aromatic amine or phenolic hydroxy group-containing compound. The composition may contain further solvent, acid and/or acid generator, or crosslinking agent.

Abstract: A resist underlayer film-forming composition in which a coating film having high flattening properties is formed on a substrate. A resist underlayer film-forming composition including an epoxy adduct (C) obtained by reacting an epoxy group-containing compound (A) with an epoxy adduct-forming compound (B), wherein one or both of the epoxy group-containing compound (A) and the epoxy adduct-forming compound (B) contain an optionally branched alkyl group having a carbon atom number of three or more. The epoxy adduct-forming compound (B) is at least one compound selected from the group consisting of carboxylic acid (B1), carboxylic anhydride (B2), a phenol compound (B3), a hydroxyl group-containing compound (B4), a thiol compound (B5), an amino compound (B6), and an imide compound (B7). The optionally branched alkyl group having a carbon atom number of three or more is contained in the epoxy adduct-forming compound (B). The optionally branched alkyl group has a C3-19 alkyl group.

Abstract: An underlayer film-forming composition used for an underlayer for a self-assembled film, including a polysiloxane and a solvent. The polysiloxane may be a hydrolysis-condensation product of a silane containing a phenyl group-containing silane, or a hydrolysis-condensation product of a silane containing a silane of Formula (1) in a ratio of 10 to 100% by mol relative to the total silane, or a hydrolysis-condensation product of silanes containing the silane of Formula (1), silane of Formula (2) [R4Si(R3)3 (2)], and silane of Formula (3) [Si(R5)4 (3)] in a ratio of silane of Formula (1): silane of Formula (2): silane of Formula (3) of 10 to 100:0 to 90:0 to 50 in terms of % by mol relative to the total silane.

Abstract: The invention provides a composition for coating a resist pattern and reversing the pattern by utilizing a difference in etching rates. A composition for applying to a resist pattern includes a component (A) which is at least one compound selected from the group consisting of a metal oxide (a1), a polyacid (a2), a polyacid salt (a3), a hydrolyzable silane (a4), a hydrolysis product (a5) of the hydrolyzable silane, and a hydrolysis condensate (a6) of the hydrolyzable silane; and a component (B), which is an aqueous solvent, in which the hydrolyzable silane (a4) is (i) a hydrolyzable silane containing an organic group having an amino group, (ii) a hydrolyzable silane containing an organic group having an ionic functional group, (iii) a hydrolyzable silane containing an organic group having hydroxy group, or (iv) a hydrolyzable silane containing an organic group having a functional group convertible to hydroxy group.

Abstract: A resist overlayer film forming composition for use in a lithography process in semiconductor device production does not intermix with a resist, blocks undesirable exposure light particularly in EUV exposure, for example, UV and DUV and selectively transmits EUV alone, and can be developed with a developer after exposure.

Abstract: A coating solution has a polymer having a formula (1) structural unit, a formula (2) primary, secondary, or tertiary amine, and a formula (3) ester capable of dissolving the polymer and amine: R1 is a hydrogen atom or methyl group. L is a divalent aromatic group optionally having at least one substituent, —C(?O)—O— group, or —C(?O)—NH— group. The —C(?O)—O— or —C(?O)—NH— group carbon atom is attached to a polymer main chain. X is a hydrogen atom or linear or branched alkyl or alkoxy group having a 1-10 carbon atom number. At least one alkyl group hydrogen atom is optionally substituted with a halogen atom or hydroxy group. R2, R3, and R4 are independently a hydrogen atom, hydroxy group, or linear, branched, or cyclic organic group having a 1-16 carbon atom number. R5 and R6 are each independently a linear or branched organic group having a 1-16 carbon atom number.

Abstract: There is provided a composition for coating a stepped substrate that has high filling properties of a pattern, and is capable of forming a coating film that does not cause degassing and heat shrinkage, and is used to form a coating film having flattening properties on the substrate. The composition for coating a stepped substrate includes a compound (C) having in the molecule a partial structure of Formula (1) (where R1 and R2 are each independently a hydrogen atom, a C1-10 alkyl group, or a C6-40 aryl group; five R3s are each independently a hydrogen atom, a hydroxy group, a C1-10 alkoxy group, a C1-10 alkyl group, a nitro group, or a halogen atom; and * is a bond site to the compound); and a solvent.

Abstract: An additive for a resist underlayer film-forming composition that modifies a surface state of a resist underlayer film into a hydrophobic state to enhance adhesion between the resist underlayer film and a resist pattern formed on the resist underlayer film, and a resist underlayer film-forming composition containing the additive. An additive for a resist underlayer film-forming composition including a polymer having a structural unit of Formula (1): (wherein R1 is a hydrogen atom or methyl group, L is a single bond or a divalent linking group, and X is an aliphatic hydrocarbon group, an alicyclic hydrocarbon group, or a heterocyclic group having an oxygen atom as a heteroatom that does not have a hydroxy group). A resist underlayer film-forming composition for lithography including a resin binder, an organic solvent, and the additive.

Abstract: A composition for forming a resist underlayer film which make possible to form a desired high-adhesion resist pattern. A resist underlayer film-forming composition for lithography containing a polymer having the following structure Formula (1) or (2) at a terminal of a polymer chain, crosslinker, compound promoting crosslinking reaction, and organic solvent. (wherein R1 is a C1-6 alkyl group optionally having a substituent, phenyl group, pyridyl group, halogeno group, or hydroxy group, R2 is a hydrogen atom, a C1-6 alkyl group, hydroxy group, halogeno group, or ester group of —C(?O)O—X wherein X is a C1-6 alkyl group optionally having a substituent, R3 is a hydrogen atom, a C1-6 alkyl group, hydroxy group, or halogeno group, R4 is a direct bond or divalent C1-8 organic group, R5 is a divalent C1-8 organic group, A is an aromatic ring or heteroaromatic ring, t is 0 or 1, and u is 1 or 2.

Abstract: A resist underlayer film forming composition for lithography that can be used as a hard mask. The composition can improve pattern resolution due to having a trihalogenoacetamide skeleton. A resist underlayer film forming composition for lithography comprising a hydrolyzable silane, a hydrolysis product thereof, a hydrolysis condensate thereof, or a combination thereof as a silane, wherein the hydrolyzable silane comprises a silane having a halogen-containing carboxylic acid amide group.

Abstract: A resist underlayer film-forming composition for lithography process having characteristics of enabling wafer surface planarization after film formation, excellent planarization performance on substrate with level difference, and good embeddability in fine hole pattern. The resist underlayer film-forming composition including polymer having unit structure of Formula (1) and solvent, wherein each of R1 to R4 is independently hydrogen atom or methyl group, and X1 is divalent organic group having at least one arylene group optionally substituted by alkyl group, amino group, or hydroxyl group, and wherein X1 in Formula (1) is organic group of Formula (2), wherein A1 is phenylene group or naphthylene group, A2 is phenylene group, naphthylene group, or organic group of Formula (3), and dotted line is bond, and wherein each of A3 and A4 is independently phenylene group or naphthylene group, and dotted line is bond.

Abstract: There is provided a new coating liquid for resist pattern coating.

Abstract: There is provided a mask blank including on a substrate: a thin film for forming a transfer pattern; a resist underlayer formed on the thin film and made of a resist underlayer composition containing a polymer having a unit structure having a lactone ring and a unit structure having a hydroxyl group; a resist film formed on the resist underlayer film and made of a resist composition; and a mixed film formed so as to be interposed between the resist underlayer film and the resist film and made of a mixed component containing the resist underlayer composition and the resist composition.

Abstract: A resin composition for pattern reversal can be embedded between traces of the pattern of a stepped substrate formed on the substrate to be processed and can form a smooth film. A polysiloxane composition for coating used in the steps of forming an organic underlayer film on a semiconductor substrate, applying a silicon hard mask-forming composition onto the underlayer film and baking the applied silicon hard mask-forming composition to form a silicon hard mask, applying a resist composition onto the silicon mask to form a resist film, exposing the resist film to light and developing the resist film after exposure to give a resist pattern, etching the silicon mask, etching the underlayer film, applying the polysiloxane composition for coating onto the patterned organic underlayer film to expose an upper surface of the underlayer film by etch back, and etching the underlayer film to reverse the pattern.