Abstract: There is provided a resist underlayer film composition for EUV lithography that is used in a device production process using EUV lithography, reduces adverse effects of EUV, and is effective for obtaining a good resist pattern, and to a method for forming a resist pattern that uses the resist underlayer film composition for EUV lithography. A resist underlayer film-forming composition for EUV lithography, including: a polymer having a repeating unit structure of formula (1): [where each of A1, A2, A3, A4, A5, and A6 is a hydrogen atom, a methyl group, or an ethyl group; X1 is formula (2), formula (3), formula (4), or formula (0): Q is formula (5) or formula (6): and a solvent. A resist underlayer film-forming composition for EUV lithography, comprising: the polymer having the repeating unit structure of formula (1); a crosslinkable compound; and a solvent.

Abstract: There is provided a resist underlayer film-forming composition to reduce the amount of sublimate generated from the resist underlayer film at baking process and to suppress aging and have high storage stability. A resist underlayer film-forming composition including an aryl sulfonic acid salt compound having a hydroxy group of Formula (1): (where Ar is a benzene ring or an aromatic hydrocarbon ring wherein benzene rings are condensed; m1 is an integer of 0 to (2+2n), m2 and m3 each is an integer of 1 to (3+2n), and (m1+m2+m3) is an integer of 2 to (4+2n), with the proviso that n is the number of the benzene rings or condensed benzene rings in the aromatic hydrocarbon ring and is an integer of 1 to 6; X+ is NH4+, a primary ammonium ion, secondary ammonium ion, tertiary ammonium ion, quaternary ammonium ion, sulfonium ion, or an iodonium cation).

Abstract: There is provided a resist overlayer film forming composition for use in a lithography process in semiconductor device production, which does not intermix with a resist, blocks undesirable exposure light particularly in EUV exposure, for example, UV and DUV and selectively transmits EUV alone, and which can be developed with a developer after exposure. A resist overlayer film forming composition including: a polymer including an organic group including a linear or branched saturated alkyl group having a carbon atom number of 1 to 10, in which some or all of hydrogen atoms thereof are substituted with fluorine atoms, and an optionally substituted C8-16 ether compound as a solvent.

Abstract: A composition forms a resist underlayer film showing improved adhesiveness to a resist pattern. A resist underlayer film-forming composition for lithography, including: a polymer that has a structure of Formula (1a), Formula (1b), or Formula (2) below on an end of the polymer; and an organic solvent: where R1 is a hydrogen atom or a methyl group; each of R2 and R3 is independently a hydrogen atom or an organic group such as a hydrocarbon group, etc., the hydrocarbon group optionally has at least one of a hydroxy group and a methylthio group as substituent(s); R4 is a hydrogen atom or a hydroxy group; Q1 is an arylene group; v is 0 or 1; y is an integer of 1 to 4; w is an integer of 1 to 4; x1 is 0 or 1; and x2 is an integer of 1 to 5.

Abstract: A composition forms a resist underlayer film showing improved adhesiveness to a resist pattern. A resist underlayer film-forming composition for lithography, including: a polymer that has a structure of Formula (1a), Formula (1b), or Formula (2) below on an end of the polymer; and an organic solvent: (where R1 is a hydrogen atom or a methyl group; each of R2 and R3 is independently a hydrogen atom or an organic group such as a hydrocarbon group, etc., the hydrocarbon group optionally has at least one of a hydroxy group and a methylthio group as substituent(s); R4 is a hydrogen atom or a hydroxy group; Q1 is an arylene group; v is 0 or 1; y is an integer of 1 to 4; w is an integer of 1 to 4; x1 is 0 or 1; and x2 is an integer of 1 to 5).

Abstract: A composition for forming a resist underlayer film for lithography, including a polymer having a repeating structural unit of Formula (1): R1 is a hydrogen atom or a methyl group and Q1 is a group of Formula (2) or Formula (3): (wherein R2, R3, R5, and R6 are independently a hydrogen atom or a linear or branched hydrocarbon group having a carbon atom number of 1 to 4, R4 is a hydrogen atom or a methyl group, R7 is a linear or branched hydrocarbon group having a carbon atom number of 1 to 6, a C1-4 alkoxy group, a C1-4 alkylthio group, a halogen atom, a cyano group, or a nitro group, w1 is an integer of 0 to 3, w2 is an integer of 0 to 2, and x is an integer of 0 to 3), and v1 and v2 are independently 0 or 1; and an organic solvent.

Abstract: An underlayer film-forming composition for a self-assembled film having a polymer including 0.2% by mole or more of a unit structure of a polycyclic aromatic vinyl compound relative to all unit structures of the polymer. The polymer includes 20% by mole or more of a unit structure of an aromatic vinyl compound relative to all the unit structures of the polymer and includes 1% by mole or more of a unit structure of the polycyclic aromatic vinyl compound relative to all the unit structures of the aromatic vinyl compound. The aromatic vinyl compound includes an optionally substituted vinylnaphthalene, acenaphthylene, or vinylcarbazole, and the polycyclic aromatic vinyl compound is vinylnaphthalene, acenaphthylene, or vinylcarbazole. The aromatic vinyl compound includes an optionally substituted styrene and an optionally substituted vinylnaphthalene, acenaphthylene, or vinylcarbazole, and the polycyclic aromatic vinyl compound is vinylnaphthalene, acenaphthylene, or vinylcarbazole.

Abstract: There is provided a composition for forming an underlayer film used for an underlayer of a self-organizing film. An underlayer film-forming composition of a self-organizing film, the underlayer film-forming composition including a polymer made of a unit structure derived from an optionally substituted styrene and a unit structure derived from a crosslink forming group-containing compound, the polymer containing 60 mol % to 95 mol % of the unit structure derived from the styrene and 5 mol % to 40 mol % of the unit structure derived from the crosslink forming group-containing compound relative to the whole unit structures of the polymer. The crosslink forming group is a hydroxy group, an epoxy group, a protected hydroxy group, or a protected carboxy group. The crosslink forming group-containing compound is hydroxyethyl methacrylate, hydroxyethyl acrylate, hydroxypropyl methacrylate, hydroxypropyl acrylate, hydroxystyrene, acrylic acid, methacrylic acid, glycidyl methacrylate, or glycidyl acrylate.

Abstract: There is provided resist underlayer film for lithography process with high dry etching resistance, wiggling resistance, and heat resistance. Resist underlayer film-forming composition for lithography including polymer having unit structure of Formula (1): wherein A is hydroxy group-substituted C6-40 arylene group derived from polyhydroxy aromatic compound; B is C6-40 arylene group or C4-30 heterocyclic group containing nitrogen atom, oxygen atom, sulfur atom, or combination thereof; X+ is H+, NH4+, primary ammonium ion, secondary ammonium ion, tertiary ammonium ion, or quaternary ammonium ion, T is hydrogen atom, C1-10 alkyl group or C6-40 aryl group that may be substituted with halogen group, hydroxy group, nitro group, amino group, carboxylate ester group, nitrile group, or combination thereof as substituent, or C4-30 heterocyclic group containing nitrogen atom, oxygen atom, sulfur atom, or combination thereof, B and T may form C4-40 ring together with carbon atom to which they are bonded.

Abstract: It is aimed to enhance adhesiveness between a resist pattern formed on a resist underlayer film and to reduce an undercut of the resist pattern. An additive for a resist underlayer film-forming composition, including: a polymer having a structural unit of Formula (1): (where R1 is a hydrogen atom or a methyl group; L is a divalent linking group; X is an acyloxy group having an amino group protected with a tert-butoxycarbonyl group or a nitrogen heterocycle protected with a tert-butoxycarbonyl group).

Abstract: A resist overlayer film forming composition that is used for a lithography process for manufacturing semiconductor devices, and selectively transmits EUV only, in particular, by blocking exposure light undesirable for EUV exposure, such as UV and DUV, without intermixing with a resist, and that can be developed with a developing solution after exposure. A resist overlayer film forming composition including: a hydroxyl group-containing novolac-based polymer containing a structure of (Formula 1-1): (in (Formula 1-1), Ar1 is a divalent organic group that contains 1 to 3 benzene ring(s) and optionally contains a hydroxy group; Ar2 is a benzene ring group, a naphthalene ring group, or an anthracene ring group; each of the hydroxy group and R1 is a substituent for a hydrogen atom on a ring of Ar2); and a solvent.

Abstract: A resist underlayer film forming composition including: a polymer having any one or more repeating structural units of Formulas (1a), (1b), and (1c): two R1s are each independently alkyl group, alkenyl group, aromatic hydrocarbon group, halogen atom, nitro group, or an amino group, two R2s are each independently hydrogen atom, alkyl group, alkenyl group, acetal group, acyl group, or glycidyl group, R3 is aromatic hydrocarbon group optionally having a substituent, R4 is hydrogen atom, phenyl group, or naphthyl group, in (1b), groups of two R3s and atoms or groups of two R4s are optionally different from each other, two “k”s are each independently 0 or 1, m is integer of 3 to 500, n, n1, and n2 are an integer of 2 to 500, p is integer of 3 to 500, X is a single bond or hetero atom, and two Qs are each independently a structural unit; and solvent.

Abstract: A resist underlayer film-forming composition for EUV lithography showing good resist shape; including: a hydrolyzable organosilane, a hydrolyzed product thereof, or a hydrolyzed condensate thereof, as a silane; and a salt of a sulfonic acid ion containing a hydrocarbon group with an onium ion. The hydrolyzable organosilane includes at least one organic silicon compound selected from the group consisting of compounds of Formula (1): R1aSi(R2)4?a ??Formula (1) and compounds of Formula (2): R3cSi(R4)3?c2Yb ??Formula (2) a hydrolyzed product thereof, or a hydrolyzed condensate thereof.

Abstract: A method of manufacturing a semiconductor device by use of an underlayer film material can form a good pattern without deteriorating the resolution limit.

Abstract: There is provided a composition for forming a resist underlayer film which has high dry-etching resistance and wiggling resistance, and achieves excellent planarizing properties for a semiconductor substrate surface having level differences or irregular portions. A resist underlayer film-forming composition including a phenol novolac resin that is obtained by causing a compound that has at least three phenolic groups, in which each of the phenolic groups has a structure bonded to a tertiary carbon atom or has a structure bonded to a quaternary carbon atom to which a methyl group binds, to react with an aromatic aldehyde or an aromatic ketone in the presence of an acid catalyst.

Abstract: A resist overlayer film composition for lithography from which a resist overlayer film is formed. A resist overlayer film forming composition including a benzene compound having at least one amino group. A resist may be an EUV resist or an electron beam resist. The benzene compound may have at least one amino group and at least one alkyl group, one or two amino groups and one to four alkyl groups, or may be a compound of Formula (1): where R1 to R5 are independently a hydrogen atom, a C1-10 alkyl group such as methyl, ethyl or isopropyl, or an amino group.

Abstract: An underlayer film-forming composition used for an underlayer for a self-assembled film, including a polysiloxane and a solvent. The polysiloxane may be a hydrolysis-condensation product of a silane containing a phenyl group-containing silane, or a hydrolysis-condensation product of a silane containing a silane of Formula (1) in a ratio of 10 to 100% by mol relative to the total silane, or a hydrolysis-condensation product of silanes containing the silane of Formula (1), silane of Formula (2) [R4Si(R3)3 (2)], and silane of Formula (3) [Si(R5)4 (3)] in a ratio of silane of Formula (1): silane of Formula (2): silane of Formula (3) of 10 to 100:0 to 90:0 to 50 in terms of % by mol relative to the total silane.

Abstract: A method for producing a semiconductor device includes the steps of: applying a composition for forming a resist underlayer film for EUV lithography including a novolac resin containing a halogen atom onto a substrate having a film to be fabricated for forming a transferring pattern and baking the composition so as to form a resist underlayer film for EUV lithography; and applying a resist for EUV lithography onto the resist underlayer film for EUV lithography, irradiating, with EUV through a mask, the resist underlayer film for EUV lithography and a film of the resist for EUV lithography on the resist underlayer film, developing the film of the resist for EUV lithography, and transferring an image formed in the mask onto the substrate by dry etching so as to form an integrated circuit device.

Abstract: A composition for forming a resist underlayer film having heat resistance, which is used for a lithography process of semiconductor device production. A resist underlayer film forming composition including a polymer having a unit structure of Formula (1): Preferably, both rings A and B are benzene rings, n1, n2, and n3 are 0, R4 and R6 are hydrogen atoms, or R5 is naphthyl. A method for producing a semiconductor device including: forming an underlayer film by use of the resist underlayer film forming composition onto a semiconductor substrate; forming a hard mask on the underlayer film; forming a resist film on the hard mask; forming a resist pattern by irradiation with light or an electron beam and development; etching the hard mask using the resist pattern; etching the underlayer film by use of the patterned hard mask; and processing the semiconductor substrate by use of the patterned underlayer film.

Abstract: A composition forms a resist underlayer film showing improved adhesiveness to a resist pattern. A resist underlayer film-forming composition for lithography, including: a polymer that has a structure of Formula (1a), Formula (1b), or Formula (2) below on an end of the polymer; and an organic solvent: (where R1 is a hydrogen atom or a methyl group; each of R2 and R3 is independently a hydrogen atom or an organic group such as a hydrocarbon group, etc., the hydrocarbon group optionally has at least one of a hydroxy group and a methylthio group as substituent(s); R4 is a hydrogen atom or a hydroxy group; Q1 is an arylene group; v is 0 or 1; y is an integer of 1 to 4; w is an integer of 1 to 4; x1 is 0 or 1; and x2 is an integer of 1 to 5).