Abstract: Provided is a surface emitting laser capable of increasing the size of a light emitting portion while curbing an increase in size as a whole. A surface emitting laser according to the present technology includes: a first structure that includes a first multilayer reflector; a second structure that includes a second multilayer reflector; an active layer that is disposed between the first and second structures; a first electrode that is electrically connected to the first structure; and a second electrode that is electrically connected to the second structure, and the first and second electrodes are provided in the second structure in a state where the first and second electrodes are insulated from each other. According to the surface emitting laser of the present technology, it is possible to provide a surface emitting laser capable of increasing the size of a light emitting portion while curbing an increase in size as a whole.

Abstract: There is provided a semiconductor device that comprises a layered structure configured by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer. The semiconductor device further includes a substrate, a first light reflecting layer arranged on the first surface side of the first compound semiconductor layer, and a second light reflecting layer arranged on the second surface side of the second compound semiconductor layer. Further, the second light reflecting layer has a flat shape, a concave surface portion is formed on a substrate surface, the first light reflecting layer is formed on at least the concave surface portion, the first compound semiconductor layer is formed to extend from the substrate surface onto the concave surface portion, and a cavity is present between the first light reflecting layer and the first compound semiconductor layer.

Abstract: Provided is a surface emitting element capable of imparting a special characteristic to an element portion. A surface emitting element according to the present technology provides a surface emitting element including at least one element portion including: a light emitting layer; and a concave mirror disposed on one side of the light emitting layer, in which the concave mirror includes: a concave mirror body; and a structure including a protrusion or a recess. According to the present technology, it is possible to provide a surface emitting element capable of imparting a special characteristic to an element portion.

Abstract: Provided is a surface-emitting element in which a configuration can be simplified and an emission wavelength is not restricted by a substrate used at the time of manufacturing. A surface-emitting element according to the present technology is a surface-emitting element including at least one light emitting element portion that includes at least one organic semiconductor layer and a concave mirror arranged on one side of the organic semiconductor layer. According to the surface-emitting element of the present technology, it is possible to provide a surface-emitting element in which the configuration can simplified and the emission wavelength is not restricted by the substrate used at the time of manufacturing.

Abstract: A light emitting element includes a stacked structure including, in a stacked state, a first light reflection layer 41 in which a plurality of thin films is stacked, a light emitting structure 20, and a second light reflection layer 42 in which a plurality of thin films is stacked. The light emitting structure includes a first compound semiconductor layer 21, an active layer 23 and, a second compound semiconductor layer 22 which are stacked. The light emitting structure 20 is formed with a light absorbing material layer 71 (32) in parallel to a virtual plane occupied by the active layer 23.

Abstract: [Solving Means] A vertical cavity surface emitting laser device according to the present technology includes: a semiconductor layer; a substrate; a first mirror; and a second mirror. The semiconductor layer includes an active layer formed of a first material. The substrate is bonded to the semiconductor layer, is formed of a second material having bandgap energy higher than that of the first material, and causes light of a specific wavelength to be transmitted therethrough. The first mirror is provided on a side of the semiconductor layer opposite to the substrate, and reflects the light of a specific wavelength. The second mirror is provided on a side of the substrate opposite to the semiconductor layer, and reflects the light of a specific wavelength.

Abstract: A light emitting element comprising a layered structure configured by layering a first light reflecting layer 41 configured by layering a plurality of thin films, a light emitting structure 20, and a second light reflecting layer 42 configured by layering a plurality of thin films, wherein the light emitting structure 20 is configured by layering, from the first light reflecting layer side, a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22, a second electrode 32 and an intermediate layer 70 are formed between the second compound semiconductor layer 22 and the second light reflecting layer 42 from the second compound semiconductor layer side, and the value of a surface roughness of a second surface 72 of the intermediate layer 70 in contact with the second light reflecting layer 42 is less than the value of a surface roughness of a first surface 71 of the intermediate layer 70 facing the second electrode 32.

Abstract: To provide a semiconductor light-emitting device that has excellent productivity and is capable of aligning a current injection region and a lens with high accuracy, and a method of producing the semiconductor light-emitting device. A method of producing a light-emitting device according to the present technology includes: forming a light-blocking structure that is a structure opaque to an exposure wavelength on a side of a first main surface of a substrate having the first main surface and a second main surface on a side opposite to the first main surface; forming a photosensitive layer that is formed of a photosensitive material on a side of the second main surface of the substrate; applying light having the exposure wavelength to the substrate from the side of the first main surface and forming the photosensitive layer into a pattern corresponding to the light-blocking structure; and forming a lens using the photosensitive layer.

Abstract: A surface-emitting semiconductor laser including: an active layer including a nitride semiconductor; a first semiconductor layer of a first electrical conduction type and a second semiconductor layer of a second electrical conduction type that are opposed to each other with the active layer therebetween; and a current confinement layer that is opposed to the active layer with the second semiconductor layer therebetween and has an opening, in which a side surface of the current confinement layer is inclined at at least a portion of a peripheral edge of the opening.

Abstract: [Object] To provide a vertical cavity surface emitting laser element and an electronic apparatus that have high light emission efficiency. [Solving Means] A vertical cavity surface emitting laser element according to the present technology includes: an active layer; a first cladding layer; and an intermediate layer. The first cladding layer is provided on the active layer. The intermediate layer is provided on the first cladding layer, electrons in the intermediate layer having potential higher than potential of electrons in the first cladding layer, holes in the intermediate layer having potential higher than potential of holes in the first cladding layer.

Abstract: [Object] To provide a vertical cavity surface emitting laser device having a concave mirror structure and excellent polarization controllability. [Solving Means] A vertical cavity surface emitting laser device according to the present technology includes: a first light-reflecting layer; a second light-reflecting layer; and a stacked body. The stacked body includes a first semiconductor layer, a second semiconductor layer, and an active layer, and is disposed between the first light-reflecting layer and the second light-reflecting layer. The stacked body has a current confinement structure for confining a current and forming a current injection region where a current concentrates. The first light-reflecting layer includes a concave mirror having a concave surface on a side of the stacked body and a convex surface on a side opposite to the stacked body.

Abstract: The present technology provides a surface emitting laser that can be manufactured with an excellent yield and has a configuration of confining a current and light. The present technology provides a surface emitting laser including a first structure including a first multilayer film reflector, a second structure including a second multilayer film reflector, and a resonator disposed between the first and second structures and including an active layer, in which a joint portion exists in at least one of inside the first structure, inside the second structure, inside the resonator, between the resonator and the first structure, or between the resonator and the second structure, and a first confinement portion that confines a current is provided in at least one of first or second constituent portion joined at the joint portion, and a second confinement portion that confines at least light of a current or light is provided in at least one of the first or second constituent portion.

Abstract: The present technology provides a surface emitting element capable of enabling highly accurate detection of an optical characteristic of an emitted light and/or enabling adjustment of the optical characteristic of the emitted light. The surface emitting element of the present technology provides a surface emitting element including a light emitting layer, a characteristic layer that is disposed on an optical path of light generated in the light emitting layer, exhibits an electrical characteristic due to light incidence, and/or has variability in an optical characteristic due to voltage application, and a plurality of electrodes provided on the characteristic layer.

Abstract: [Object] To provide a laser device that has a concave mirror structure and exhibits excellent optical characteristics, a laser device array, and a method of producing the laser device. [Solving Means] A laser device according to the present technology includes: a first light-reflecting layer; a second light-reflecting layer; and a stacked body. The stacked body includes an active layer, a lens being provided on a first surface on a side of the first light-reflecting layer.

Abstract: The present technology provides a surface emitting laser capable of suppressing a decrease in luminous efficiency. The present technology provides a surface emitting laser including: first and second multilayer film reflectors; a plurality of active layers laminated together between the first and second multilayer film reflectors; a tunnel junction disposed between two active layers adjacent to each other in a lamination direction among the plurality of active layers; and an oxide confinement layer disposed between one active layer of the two adjacent active layers and the tunnel junction. According to the present technology, it is possible to provide a surface emitting laser capable of suppressing a decrease in luminous efficiency.

Abstract: A surface emitting laser according to one embodiment of the present disclosure includes: a substrate having a convex part provided on a surface thereof; and a vertical resonator structure formed on the substrate, and including an active layer, a first semiconductor layer, and a current blocking layer. The first semiconductor layer is a semiconductor layer of a first conductivity type having a step structure part having a shape conforming to the convex part at a location facing the convex part. The current blocking layer is a semiconductor layer of a second conductivity type different from the first conductivity type and having an opening in which an inner peripheral surface is in contact with an outer peripheral surface of the step structure part.

Abstract: A light emitting element according to the present disclosure includes: a laminated structure 20 in which a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22 are laminated; a first light reflecting layer 41 formed on a first surface side of the first compound semiconductor layer 21; a second light reflecting layer 42 formed on a second surface side of the second compound semiconductor layer 22; a first electrode 31 electrically connected to the first compound semiconductor layer 21; and a second electrode 32 electrically connected to the second compound semiconductor layer 22, a current confinement region 52 that controls an inflow of a current to the active layer 23 is provided, and when an axis in a thickness direction of the laminated structure 20 passing through a center of a current injection region 51 surrounded by the current confinement region 52 is defined as a Z axis, a direction orthogonal to the Z axis is defined as an X direction, and a directi

Abstract: A light-emitting device includes: a light-emitting element array including a plurality of light-emitting elements arranged; and a dummy concave mirror section surrounding the light-emitting element array, and the light-emitting elements each include a stacked structure including a stack of a first compound semiconductor layer, an active layer, and a second compound semiconductor layer, a first light reflection layer formed on a base part surface, and a second light reflection layer. A first convex part is formed in a portion of the base part surface in which the first light reflection layer functioning as a concave mirror is formed, with respect to a second surface of the first compound semiconductor layer, and a second convex part is formed in a portion of an extending part of the base part surface in which the dummy concave mirror section is formed, with respect to the second surface of the first compound semiconductor layer.

Abstract: The present disclosure provides new and innovative VCSEL devices and systems. In an example, a VCSEL device comprises a cavity mirror with a curved mirror surface of a VCSEL and a radius of curvature (ROC) of the curved mirror surface that is anisotropic, wherein the ROC comprises four directions, the four directions being +x, +y, ?x, ?y, the ROC in at least one direction is in a range greater than a cavity length of the VCSEL and less than a predefined ROC value for a standard beam width (ROCUL), and the ROC in at least one of the other directions is outside the range.

Abstract: A semiconductor laser element includes: a resonator structure including a stacked structure in which a first compound semiconductor layer, an active layer, and a second compound semiconductor layer are stacked; and a first light reflective layer and a second light reflective layer which are provided at both ends along a resonance direction of the resonator structure. When an oscillation wavelength is set to ?, each of the first light reflective layer and the second light reflective layer includes a refractive index periodic structure including, in a stacked manner, a plurality of thin films each having an optical film thickness of k0 (?/4). A phase shift layer is provided inside at least one light reflective layer of the first light reflective layer or the second light reflective layer.