Abstract: The present technology provides a surface emitting laser that can be manufactured with an excellent yield and has a configuration of confining a current and light. The present technology provides a surface emitting laser including a first structure including a first multilayer film reflector, a second structure including a second multilayer film reflector, and a resonator disposed between the first and second structures and including an active layer, in which a joint portion exists in at least one of inside the first structure, inside the second structure, inside the resonator, between the resonator and the first structure, or between the resonator and the second structure, and a first confinement portion that confines a current is provided in at least one of first or second constituent portion joined at the joint portion, and a second confinement portion that confines at least light of a current or light is provided in at least one of the first or second constituent portion.

Abstract: [Object] To provide a vertical cavity surface emitting laser device having a concave mirror structure and excellent polarization controllability. [Solving Means] A vertical cavity surface emitting laser device according to the present technology includes: a first light-reflecting layer; a second light-reflecting layer; and a stacked body. The stacked body includes a first semiconductor layer, a second semiconductor layer, and an active layer, and is disposed between the first light-reflecting layer and the second light-reflecting layer. The stacked body has a current confinement structure for confining a current and forming a current injection region where a current concentrates. The first light-reflecting layer includes a concave mirror having a concave surface on a side of the stacked body and a convex surface on a side opposite to the stacked body.

Abstract: [Object] To provide a laser device that has a concave mirror structure and exhibits excellent optical characteristics, a laser device array, and a method of producing the laser device. [Solving Means] A laser device according to the present technology includes: a first light-reflecting layer; a second light-reflecting layer; and a stacked body. The stacked body includes an active layer, a lens being provided on a first surface on a side of the first light-reflecting layer.

Abstract: The present technology provides a surface emitting element capable of enabling highly accurate detection of an optical characteristic of an emitted light and/or enabling adjustment of the optical characteristic of the emitted light. The surface emitting element of the present technology provides a surface emitting element including a light emitting layer, a characteristic layer that is disposed on an optical path of light generated in the light emitting layer, exhibits an electrical characteristic due to light incidence, and/or has variability in an optical characteristic due to voltage application, and a plurality of electrodes provided on the characteristic layer.

Abstract: The present technology provides a surface emitting laser capable of suppressing a decrease in luminous efficiency. The present technology provides a surface emitting laser including: first and second multilayer film reflectors; a plurality of active layers laminated together between the first and second multilayer film reflectors; a tunnel junction disposed between two active layers adjacent to each other in a lamination direction among the plurality of active layers; and an oxide confinement layer disposed between one active layer of the two adjacent active layers and the tunnel junction. According to the present technology, it is possible to provide a surface emitting laser capable of suppressing a decrease in luminous efficiency.

Abstract: A surface emitting laser according to one embodiment of the present disclosure includes: a substrate having a convex part provided on a surface thereof; and a vertical resonator structure formed on the substrate, and including an active layer, a first semiconductor layer, and a current blocking layer. The first semiconductor layer is a semiconductor layer of a first conductivity type having a step structure part having a shape conforming to the convex part at a location facing the convex part. The current blocking layer is a semiconductor layer of a second conductivity type different from the first conductivity type and having an opening in which an inner peripheral surface is in contact with an outer peripheral surface of the step structure part.

Abstract: A light emitting element according to the present disclosure includes: a laminated structure 20 in which a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22 are laminated; a first light reflecting layer 41 formed on a first surface side of the first compound semiconductor layer 21; a second light reflecting layer 42 formed on a second surface side of the second compound semiconductor layer 22; a first electrode 31 electrically connected to the first compound semiconductor layer 21; and a second electrode 32 electrically connected to the second compound semiconductor layer 22, a current confinement region 52 that controls an inflow of a current to the active layer 23 is provided, and when an axis in a thickness direction of the laminated structure 20 passing through a center of a current injection region 51 surrounded by the current confinement region 52 is defined as a Z axis, a direction orthogonal to the Z axis is defined as an X direction, and a directi

Abstract: A light-emitting device includes: a light-emitting element array including a plurality of light-emitting elements arranged; and a dummy concave mirror section surrounding the light-emitting element array, and the light-emitting elements each include a stacked structure including a stack of a first compound semiconductor layer, an active layer, and a second compound semiconductor layer, a first light reflection layer formed on a base part surface, and a second light reflection layer. A first convex part is formed in a portion of the base part surface in which the first light reflection layer functioning as a concave mirror is formed, with respect to a second surface of the first compound semiconductor layer, and a second convex part is formed in a portion of an extending part of the base part surface in which the dummy concave mirror section is formed, with respect to the second surface of the first compound semiconductor layer.

Abstract: The present disclosure provides new and innovative VCSEL devices and systems. In an example, a VCSEL device comprises a cavity mirror with a curved mirror surface of a VCSEL and a radius of curvature (ROC) of the curved mirror surface that is anisotropic, wherein the ROC comprises four directions, the four directions being +x, +y, ?x, ?y, the ROC in at least one direction is in a range greater than a cavity length of the VCSEL and less than a predefined ROC value for a standard beam width (ROCUL), and the ROC in at least one of the other directions is outside the range.

Abstract: A semiconductor laser element includes: a resonator structure including a stacked structure in which a first compound semiconductor layer, an active layer, and a second compound semiconductor layer are stacked; and a first light reflective layer and a second light reflective layer which are provided at both ends along a resonance direction of the resonator structure. When an oscillation wavelength is set to ?, each of the first light reflective layer and the second light reflective layer includes a refractive index periodic structure including, in a stacked manner, a plurality of thin films each having an optical film thickness of k0 (?/4). A phase shift layer is provided inside at least one light reflective layer of the first light reflective layer or the second light reflective layer.

Abstract: A light emitting element of the present disclosure includes a compound semiconductor substrate 11, a stacked structure 20 including a GaN-based compound semiconductor, a first light reflection layer 41, and a second light reflection layer 42. The stacked structure 20 includes, in a stacked state a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22. The first light reflection layer 41 is disposed on the compound semiconductor substrate 11 and has a concave mirror section 43. The second light reflection layer 42 is disposed on a second surface side of the second compound semiconductor layer 22 and has a flat shape. The compound semiconductor substrate 11 includes a low impurity concentration compound semiconductor substrate or a semi-insulating compound semiconductor substrate.

Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

Abstract: A light emitting element (10A) of the present disclosure includes: a stacked structure (20) in which a first compound semiconductor layer (21) having a first surface (21a) and a second surface (21b), an active layer (23), and a second compound semiconductor layer (22) having a first surface (22a) and a second surface (22b) are stacked; a first light reflecting layer (41) formed on a first surface side of the first compound semiconductor layer (21) and having a convex shape in a direction away from the active layer (23); and a second light reflecting layer (42) formed on a second surface side of the second compound semiconductor layer (22) and having a flat shape, in which a partition wall (24) extending in a stacking direction of the stacked structure (20) is formed so as to surround the first light reflecting layer (41).

Abstract: A light emitting element includes a laminated structure 20 in which a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22 are laminated, a first light reflecting layer 41, and a second light reflecting layer 42 having a flat shape, a base surface 90 located on a side of a first surface of the first compound semiconductor layer 21 has a first region 91 (upwardly convex first-A region 91A and first-B region 91B) including a protruding portion protruding in a direction away from the active layer and a second region 92 having a flat surface, the first light reflecting layer 41 is formed at least on the first-A region 91A, a second curve formed by the first-B region 91B and a straight line formed by the second region 92 intersects at an angle exceeding 0°, and the second curve includes at least one kind of figure selected from the group consisting of a combination of a downwardly convex curve, a line segment, and an arbitrary curve.

Abstract: [Object] To provide a vertical cavity surface emitting laser element having a structure whose pitch can be narrowed, a vertical cavity surface emitting laser element array, a vertical cavity surface emitting laser module, and a method of producing a vertical cavity surface emitting laser element. [Solving Means] A vertical cavity surface emitting laser element according to the present technology includes: a first substrate; and a second substrate. The first substrate is provided with a semiconductor layer including an active layer and a first distributed Bragg reflector (DBR) layer. The second substrate is provided with a constriction layer and a second DBR layer, the constriction layer having a constriction region and an injection region having conductivity higher than that of the constriction region, the second substrate being bonded to the first substrate such that the constriction layer is adjacent to the semiconductor layer.

Abstract: A light emitting element array includes a plurality of light emitting elements 10A arranged. Each light emitting element 10A includes: a stacked structure 20 including a stack of a first compound semiconductor layer 21 having a first surface 21a and a second surface 21b, an active layer 23 facing the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 having a first surface 22a and a second surface 22b; a first light reflection layer 41 formed on a base part surface 90 located on a first surface side of the first compound semiconductor layer 21; and a second light reflection layer 42 formed on a second surface side of the second compound semiconductor layer 22 and having a flat shape. The base part surface 90 extends to a peripheral region 99 surrounded by the plurality of light emitting elements. The base part surface 90 has a concavo-convex shape, and is differentiable.

Abstract: A light emitting element includes: a laminated structural body 20 in which a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22 are laminated; a first electrode 31 electrically connected to the first compound semiconductor layer 21; and a second electrode 32 and a second light reflecting layer 42 formed on the second compound semiconductor layer 22, in which a protrusion 43 is formed on the first surface side of the first compound semiconductor layer 21, a smoothing layer 44 is formed on at least the protrusion 43, the protrusion 43 and the smoothing layer 44 constitute a concave mirror portion, a first light reflecting layer 41 is formed on at least a part of the smoothing layer 44, and the second light reflecting layer 42 has a flat shape.

Abstract: A light emitting element comprising a layered structure configured by layering a first light reflecting layer 41 configured by layering a plurality of thin films, a light emitting structure 20, and a second light reflecting layer 42 configured by layering a plurality of thin films, wherein the light emitting structure 20 is configured by layering, from the first light reflecting layer side, a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22, a second electrode 32 and an intermediate layer 70 are formed between the second compound semiconductor layer 22 and the second light reflecting layer 42 from the second compound semiconductor layer side, and the value of a surface roughness of a second surface 72 of the intermediate layer 70 in contact with the second light reflecting layer 42 is less than the value of a surface roughness of a first surface 71 of the intermediate layer 70 facing the second electrode 32.

Abstract: A monolithic laser device assembly 10A in the present disclosure includes a first gain portion 20 having a first end portion 20A and a second end portion 20B, a second gain portion 30 having a third end portion 30A and a fourth end portion 30B, one or multiple ring resonators 40, a semiconductor optical amplifier 50 for amplifying a laser light emitted from the first gain portion 20, and a pulse selector 60 disposed between the first gain portion 20 and the semiconductor optical amplifier 50, in which the ring resonator 40 is optically coupled with the first gain portion 20 and with the second gain portion 30, and laser oscillation is performed on either the first gain portion 20 or the second gain portion 30.

Abstract: A semiconductor device comprising: a layered structure 20 configured by layering a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22; a substrate 11; a first light reflecting layer 41 arranged on the first surface side of the first compound semiconductor layer 21; and a second light reflecting layer 42 arranged on the second surface side of the second compound semiconductor layer 22, wherein the second light reflecting layer 42 has a flat shape; a concave surface portion 12 is formed on a substrate surface 11b; the first light reflecting layer 41 is formed on at least the concave surface portion 12; the first compound semiconductor layer 21 is formed to extend from the substrate surface 11b onto the concave surface portion 12; and a cavity is present between the first light reflecting layer 41 formed on the concave surface portion 12 and the first compound semiconductor layer 21.