Patents by Inventor Rintaro Koda
Rintaro Koda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140307750Abstract: A semiconductor laser apparatus is provided. The semiconductor laser apparatus includes a mode-locked semiconductor laser device and an external resonator including a dispersion compensation system, wherein the semiconductor laser apparatus is configured to generate self modulation, to introduce a negative group velocity dispersion into the external resonator, and to provide spectral filtering after the external resonator.Type: ApplicationFiled: November 9, 2012Publication date: October 16, 2014Inventors: Shunsuke Kono, Masaru Kuramoto, Takao Miyajima, Rintaro Koda, Hideki Watanabe
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Patent number: 8792160Abstract: Provided is a light-emitting device including (a) a layer structure obtained by sequentially growing on a base substrate a first compound semiconductor layer of a first conductivity type, (b) an active layer formed of a compound semiconductor, and (c) a second compound semiconductor layer of a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The layer structure formed of at least a part of the second compound semiconductor layer in a thickness direction of the second compound semiconductor layer. The first compound semiconductor layer has a thickness greater than 0.6 ?m. A high-refractive index layer formed of a compound semiconductor material having a refractive index higher than a refractive index of a compound semiconductor material of the first compound semiconductor layer is formed in the first compound semiconductor layer.Type: GrantFiled: September 13, 2012Date of Patent: July 29, 2014Assignee: Sony CorporationInventors: Rintaro Koda, Hideki Watanabe, Masaru Kuramoto, Shunsuke Kono, Takao Miyajima
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Patent number: 8786941Abstract: A semiconductor optical amplifier includes: a laminated structure sequentially including a first compound semiconductor layer composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer having a light amplification region composed of GaN compound semiconductor, and a second compound semiconductor layer composed of GaN compound semiconductor and having a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The laminated structure has a ridge stripe structure. When widths of the ridge stripe structure in a light output end face and the ridge stripe structure in a light incident end face are respectively Wout, and Win, Wout>Win is satisfied. A carrier non-injection region is provided in an internal region of the laminated structure from the light output end face along an axis line of the semiconductor optical amplifier.Type: GrantFiled: June 23, 2011Date of Patent: July 22, 2014Assignees: Sony Corporation, Tohoku UniversityInventors: Masaru Kuramoto, Masao Ikeda, Rintaro Koda, Tomoyuki Oki, Hideki Watanabe, Takao Miyajima, Hiroyuki Yokoyama
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Patent number: 8774245Abstract: A laser diode with which high density crystal defect and surface roughness are able to be inhibited from being generated is provided. The laser diode includes a laminated body including an active layer and a current narrowing layer on a substrate. The substrate is an inclined substrate having an off-angle larger than 0 degrees in the direction of [1-100] from (0001) C plane.Type: GrantFiled: September 30, 2010Date of Patent: July 8, 2014Assignee: Sony CorporationInventors: Rintaro Koda, Yusuke Nakayama
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Patent number: 8761221Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.Type: GrantFiled: April 3, 2008Date of Patent: June 24, 2014Assignee: Sony CorporationInventors: Tomoyuki Oki, Yuji Masui, Yoshinori Yamauchi, Rintaro Koda, Takahiro Arakida
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Patent number: 8514905Abstract: A laser diode with which separation of a current narrowing layer is able to be prevented is provided. The laser diode includes a mesa that has a first multilayer film reflector, an active layer, and a second multilayer film reflector in this order, and has a current narrowing layer for narrowing a current injected into the active layer and a buffer layer adjacent to the current narrowing layer. The current narrowing layer is formed by oxidizing a first oxidized layer containing Al. The buffer layer is formed by oxidizing a second oxidized layer whose material and a thickness are selected so that an oxidation rate is higher than that of the first multilayer film reflector and the second multilayer film reflector and is lower than that of the first oxidized layer. A thickness of the buffer layer is 10 nm or more.Type: GrantFiled: August 23, 2010Date of Patent: August 20, 2013Assignee: Sony CorporationInventors: Yuji Masui, Rintaro Koda, Tomoyuki Oki, Takahiro Arakida, Naoki Jogan, Yoshinori Yamauchi
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Patent number: 8497141Abstract: A method of manufacturing a semiconductor device capable of largely increasing the yield and a semiconductor device manufactured by using the method is provided. After a semiconductor layer is formed on a substrate, as one group, a plurality of functional portions with at least one parameter value different from each other is formed in the semiconductor layer for every unit chip area. Then, a subject that is changed depending on the parameter value is measured and evaluated and after that, the substrate is divided for every chip area so that a functional portion corresponding with a given criterion as a result of the evaluation is not broken. Thereby, at least one functional portion corresponding with a given criterion can be formed by every chip area by appropriately adjusting each parameter value.Type: GrantFiled: August 8, 2011Date of Patent: July 30, 2013Assignee: Sony CorporationInventors: Yuji Masui, Takahiro Arakida, Yoshinori Yamauchi, Kayoko Kikuchi, Rintaro Koda, Norihiko Yamaguchi
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Patent number: 8483256Abstract: A laser diode element assembly includes: a laser diode element; and a light reflector, in which the laser diode element includes (a) a laminate structure body configured by laminating, in order, a first compound semiconductor layer of a first conductivity type made of a GaN-based compound semiconductor, a third compound semiconductor layer made of a GaN-based compound semiconductor and including a light emission region, and a second compound semiconductor layer of a second conductivity type made of a GaN-based compound semiconductor, the second conductivity type being different from the first conductivity type, (b) a second electrode formed on the second compound semiconductor layer, and (c) a first electrode electrically connected to the first compound semiconductor layer, the laminate structure body includes a ridge stripe structure, and a minimum width Wmin and a maximum width Wmax of the ridge stripe structure satisfy 1<Wmax/Wmin<3.3 or 6?Wmax/Wmin?13.3.Type: GrantFiled: March 12, 2012Date of Patent: July 9, 2013Assignees: Sony Corporation, Tohoku UniversityInventors: Tomoyuki Oki, Masaru Kuramoto, Rintaro Koda, Hideki Watanabe, Hiroyuki Yokoyama
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Patent number: 8450752Abstract: The present invention provides a semiconductor device realizing reduced occurrence of a defect such as a crack at the time of adhering elements to each other. The semiconductor device includes a first element and a second element adhered to each other. At least one of the first and second elements has a pressure relaxation layer on the side facing the other of the first and second elements, and the pressure relaxation layer includes a semiconductor part having a projection/recess part including a projection projected toward the other element, and a resin part filled in a recess in the projection/recess part.Type: GrantFiled: January 31, 2011Date of Patent: May 28, 2013Assignee: Sony CorporationInventors: Rintaro Koda, Takahiro Arakida, Yuji Masui, Tomoyuki Oki
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Publication number: 20130075772Abstract: Provided is a light-emitting device including (a) a layer structure obtained by sequentially growing on a base substrate a first compound semiconductor layer of a first conductivity type, (b) an active layer formed of a compound semiconductor, and (c) a second compound semiconductor layer of a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The layer structure formed of at least a part of the second compound semiconductor layer in a thickness direction of the second compound semiconductor layer. The first compound semiconductor layer has a thickness greater than 0.6 ?m. A high-refractive index layer formed of a compound semiconductor material having a refractive index higher than a refractive index of a compound semiconductor material of the first compound semiconductor layer is formed in the first compound semiconductor layer.Type: ApplicationFiled: September 13, 2012Publication date: March 28, 2013Applicant: SONY CORPORATIONInventors: Rintaro Koda, Hideki Watanabe, Masaru Kuramoto, Shunsuke Kono, Takao Miyajima
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Patent number: 8372670Abstract: A method for making a light-emitting element assembly including a support substrate having a first surface, a second surface facing the first surface, a recessed portion, and a conductive material layer formed over the first surface and the inner surface of the recessed portion, and a light-emitting element. The light-emitting element has a laminated structure including a first compound semiconductor layer, a light-emitting portion, and a second compound semiconductor layer, at least the second compound semiconductor layer and the light-emitting portion constituting a mesa structure. The light-emitting element further includes an insulating layer formed, a second electrode, and a first electrode. The mesa structure is placed in the recessed portion so that the conductive material layer and the second electrode are in at least partial contact with each other, and light emitted from the light-emitting portion is emitted from the second surface side of the first compound semiconductor layer.Type: GrantFiled: July 22, 2010Date of Patent: February 12, 2013Assignee: Sony CorporationInventors: Rintaro Koda, Takahiro Arakida, Satoshi Taniguchi, Yuji Masui, Nobuhiro Suzuki, Tomoyuki Oki, Chiyomi Uchiyama, Kayoko Kikuchi
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Patent number: 8290009Abstract: A vertical cavity surface emitting laser includes a layer-stack structure including, on a substrate, a transverse-mode adjustment layer, a first multilayer reflecting mirror, an active layer having a light emission region, and a second multilayer reflecting mirror in order from the substrate side, and including a current confinement layer in which a current injection region is formed in a region corresponding to the light emission region in the first multilayer reflecting mirror, between the first multilayer reflecting mirror and the active layer, between the active layer and the second multilayer reflecting mirror, or in the second multilayer reflecting mirror. In the transverse-mode adjustment layer, reflectance at an oscillation wavelength in the region opposite to a center of the light emission region is higher than that at an oscillation wavelength in the region opposite to an outer edge of the light emission region.Type: GrantFiled: July 28, 2009Date of Patent: October 16, 2012Assignee: Sony CorporationInventors: Yuji Masui, Takahiro Arakida, Rintaro Koda, Osamu Maeda, Tomoyuki Oki, Naoki Jogan
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Publication number: 20120236886Abstract: A laser diode element assembly includes: a laser diode element; and a light reflector, in which the laser diode element includes (a) a laminate structure body configured by laminating, in order, a first compound semiconductor layer of a first conductivity type made of a GaN-based compound semiconductor, a third compound semiconductor layer made of a GaN-based compound semiconductor and including a light emission region, and a second compound semiconductor layer of a second conductivity type made of a GaN-based compound semiconductor, the second conductivity type being different from the first conductivity type, (b) a second electrode formed on the second compound semiconductor layer, and (c) a first electrode electrically connected to the first compound semiconductor layer, the laminate structure body includes a ridge stripe structure, and a minimum width Wmin and a maximum width Wmax of the ridge stripe structure satisfy 1<Wmax/Wmin<3.3 or 6?Wmax/Wmin?13.3.Type: ApplicationFiled: March 12, 2012Publication date: September 20, 2012Applicants: TOHOKU UNIVERSITY, SONY CORPORATIONInventors: Tomoyuki Oki, Masaru Kuramoto, Rintaro Koda, Hideki Watanabe, Hiroyuki Yokoyama
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Publication number: 20120201259Abstract: A submount having a structure and a configuration resistant to an increase in manufacturing cost and a reduction in yields or reliability, and including an oblique waveguide is provided. A submount having a first surface and allowing a semiconductor light-emitting element including a waveguide to be fixed on the first surface, the waveguide having an axis line inclined at ?WG (degrees) with respect to a normal to a light-incident/emission end surface of the semiconductor light-emitting element, and made of a semiconductor material with a refractive index nLE, the submount includes: a fusion-bonding material layer on the first surface; and an alignment mark formed in the fusion-bonding material layer, the alignment mark allowed to be recognized at an angle ?SM=sin?1 [nLE·sin(?WG)/n0], where a refractive index of a light-transmitting medium in proximity to the outside of the light-incident/emission end surface of the semiconductor light-emitting element is n0.Type: ApplicationFiled: February 2, 2012Publication date: August 9, 2012Applicants: Tohoku University, Sony CorporationInventors: Hideki Watanabe, Rintaro Koda, Masaru Kuramoto, Kaori Naganuma, Hiroyuki Yokoyama
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Publication number: 20120175670Abstract: A method for manufacturing a light emitting element including the steps of (A) sequentially forming on a substrate a first compound semiconductor layer having a first conduction type, an active layer, and a second compound semiconductor layer having a second conduction type; (B) forming a plurality of point-like hole portions in a thickness direction in at least a region of the second compound semiconductor layer located outside a region to be provided with a current confinement region; and (C) forming an insulating region by subjecting a part of the second compound semiconductor layer to an insulation treatment from side walls of the hole portions so as to produce the current confinement region surrounded by the insulating region in the second compound semiconductor layer.Type: ApplicationFiled: March 20, 2012Publication date: July 12, 2012Applicant: SONY CORPORATIONInventors: Yuji Masui, Takahiro Arakida, Rintaro Koda, Tomoyuki Oki
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Patent number: 8218596Abstract: A Vertical Cavity Surface Emitting Laser capable of decreasing the lowering of the yield due to displacement and separation of a pedestal without enormous increase of the threshold value and more difficult manufacturing process is provided. A base of a mesa spreads over the top face of a lower DBR layer. The base is a non-flat face in which end faces of a plurality of layers are exposed. The non-flat face is generated due to etching unevenness in forming the mesa, and is in a state of a step in which end faces of a low-refractive index layer and a high-refractive index layer included in the lower DBR layer are alternatively exposed. At least one of the layers exposed in the non-flat face in the plurality of low-refractive index layers included in the lower DBR layer is an oxidation inhibition layer.Type: GrantFiled: October 12, 2011Date of Patent: July 10, 2012Assignee: Sony CorporationInventors: Tomoyuki Oki, Rintaro Koda, Naoki Jogan, Yuji Masui, Takahiro Arakida
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Publication number: 20120147917Abstract: A laser diode device includes a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer that has a light emitting region and a saturable absorption region, and a second compound semiconductor layer are sequentially layered, a second electrode, and a first electrode. The laminated structure has ridge stripe structure. The second electrode is separated into a first section to obtain forward bias state by applying a direct current to the first electrode through the light emitting region and a second section to add electric field to the saturable absorption region by an isolation trench. When minimum width of the ridge stripe structure is WMIN, and width of the ridge stripe structure of the second section of the second electrode in an interface between the second section of the second electrode and the isolation trench is W2, 1<W2/WMIN is satisfied.Type: ApplicationFiled: December 2, 2011Publication date: June 14, 2012Applicants: Tohoku University, Sony CorporationInventors: Tomoyuki Oki, Hideki Watanabe, Rintaro Koda, Masaru Kuramoto, Hiroyuki Yokoyama
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Patent number: 8183074Abstract: A method for manufacturing a light emitting element includes the steps of (A) forming sequentially a first compound semiconductor layer having a first conduction type, an active layer, and a second compound semiconductor layer having a second conduction type on a substrate, (B) forming a plurality of point-like hole portions in a thickness direction in at least a region of the second compound semiconductor layer located outside a region to be provided with a current confinement region, and (C) forming an insulating region by subjecting a part of the second compound semiconductor layer to an insulation treatment from side walls of the hole portions so as to produce the current confinement region surrounded by the insulating region in the second compound semiconductor layer.Type: GrantFiled: January 14, 2008Date of Patent: May 22, 2012Assignee: Sony CorporationInventors: Yuji Masui, Takahiro Arakida, Rintaro Koda, Tomoyuki Oki
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Publication number: 20120034720Abstract: A Vertical Cavity Surface Emitting Laser capable of decreasing the lowering of the yield due to displacement and separation of a pedestal without enormous increase of the threshold value and more difficult manufacturing process is provided. A base of a mesa spreads over the top face of a lower DBR layer. The base is a non-flat face in which end faces of a plurality of layers are exposed. The non-flat face is generated due to etching unevenness in forming the mesa, and is in a state of a step in which end faces of a low-refractive index layer and a high-refractive index layer included in the lower DBR layer are alternatively exposed. At least one of the layers exposed in the non-flat face in the plurality of low-refractive index layers included in the lower DBR layer is an oxidation inhibition layer.Type: ApplicationFiled: October 12, 2011Publication date: February 9, 2012Applicant: Sony CorporationInventors: Tomoyuki Oki, Rintaro Koda, Naoki Jogan, Yuji Masui, Takahiro Arakida
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Patent number: 8102890Abstract: A semiconductor light emitting device includes a first-conductivity-type first multilayer film reflecting mirror, and a second-conductivity-type second multilayer film reflecting mirror; a cavity layer; and a first conductive section, a second conductive section, and a third conductive section. The cavity layer has a stacked configuration including a first-conductivity-type or undoped first cladding layer, an undoped first active layer, a second-conductivity-type or undoped second cladding layer, a second-conductivity-type first contact layer, a first-conductivity-type second contact layer, a first-conductivity-type or undoped third cladding layer, an undoped second active layer, and a second-conductivity-type or undoped fourth cladding layer.Type: GrantFiled: March 21, 2011Date of Patent: January 24, 2012Assignee: Sony CorporationInventors: Yuji Masui, Takahiro Arakida, Yoshinori Yamauchi, Rintaro Koda, Tomoyuki Oki, Naoki Jogan