Abstract: This invention relates to prognostic signatures, and compositions and methods for determining the prognosis of cancer in a patient, particularly for colorectal cancer. Specifically, this invention relates to the use of genetic markers for the prediction of the prognosis of cancer, such as colorectal cancer based on signatures of genetic markers. In various aspects, the invention relates to a method of predicting the likelihood of long-term survival of a cancer patient, a method of determining a treatment regime for a cancer patient, a method of preparing a treatment modality for a cancer patient, among other methods as well as kits and devices for carrying out these methods.

Abstract: This invention relates to prognostic signatures, and compositions and methods for determining the prognosis of cancer in a patient, particularly for colorectal cancer. Specifically, this invention relates to the use of genetic markers for the prediction of the prognosis of cancer, such as colorectal cancer based on signatures of genetic markers. In various aspects, the invention relates to a method of predicting the likelihood of long-term survival of a cancer patient, a method of determining a treatment regime for a cancer patient, a method of preparing a treatment modality for a cancer patient, among other methods as well as kits and devices for carrying out these methods.

Abstract: A ballast block has a uniquely designed framework consisting of lightweight, pre-fabricated, metal panel members and cross-bracing and elongated bracing members. The various components of the ballast block framework are compactly bundled and shipped to the end use location for assembly on-site. Once assembled, the ballast block framework is properly positioned on its permanent, end use location and concrete or equivalent ballast material is poured into the framework, completely filling its internal space. The ballast block can be sized and fabricated for the specific desired purpose.

Abstract: This invention relates to prognostic signatures, and compositions and methods for determining the prognosis of cancer in a patient, particularly for colorectal cancer. Specifically, this invention relates to the use of genetic markers for the prediction of the prognosis of cancer, such as colorectal cancer, based on signatures of genetic markers. In various aspects, the invention relates to a method of predicting the likelihood of long-term survival of a cancer patient, a method of determining a treatment regime for a cancer patient, a method of preparing a treatment modality for a cancer patient, among other methods as well as kits and devices for carrying out these methods.

Abstract: A ballast block has a uniquely designed framework consisting of lightweight, pre-fabricated, metal panel members and cross-bracing and elongated bracing members. The various components of the ballast block framework are compactly bundled and shipped to the end use location for assembly on-site. Once assembled, the ballast block framework is properly positioned on its permanent, end use location and concrete or equivalent ballast material is poured into the framework, completely filling its internal space. The ballast block can be sized and fabricated for the specific desired purpose.

Abstract: This invention relates to prognostic signatures, and compositions and methods for determining the prognosis of cancer in a patient, particularly for colorectal cancer. Specifically, this invention relates to the use of genetic markers for the prediction of the prognosis of cancer, such as colorectal cancer, based on signatures of genetic markers. In various aspects, the invention relates to a method of predicting the likelihood of long-term survival of a cancer patient, a method of determining a treatment regime for a cancer patient, a method of preparing a treatment modality for a cancer patient, among other methods as well as kits and devices for carrying out these methods.

Abstract: In integrated circuit technology; an electromigration and diffusion sensitive conductor of a metal such as copper and processing procedure therefore is provided, wherein, at a planarized chemical mechanical processed interfacing surface, the conductor metal is positioned in a region of a selectable low K eff dielectric material surrounded by a material selected to be protection from outdiffusion and a source of a film thickness cap that is to form over the conductor metal and/or serve as a catalytic layer for electroless selective deposition of a CoWP capping .

Abstract: This invention relates to prognostic signatures, and compositions and methods for determining the prognosis of cancer in a patient, particularly for colorectal cancer. Specifically, this invention relates to the use of genetic markers for the prediction of the prognosis of cancer, such as colorectal cancer, based on signatures of genetic markers. In various aspects, the invention relates to a method of predicting the likelihood of long-term survival of a cancer patient, a method of determining a treatment regime for a cancer patient, a method of preparing a treatment modality for a cancer patient, among other methods as well as kits and devices for carrying out these methods.

Abstract: The idea of the invention is to coat the free surface of patterned Cu conducting lines in on-chip interconnections (BEOL) wiring by a 1-20 nm thick metal layer prior to deposition of the interlevel dielectric. This coating is sufficiently thin so as to obviate the need for additional planarization by polishing, while providing protection against oxidation and surface, or interface, diffusion of Cu which has been identified by the inventors as the leading contributor to metal line failure by electromigration and thermal stress voiding. Also, the metal layer increases the adhesion strength between the Cu and dielectric so as to further increase lifetime and facilitate process yield. The free surface is a direct result of the CMP (chemical mechanical polishing) in a damascene process or in a dry etching process by which Cu wiring is patterned. It is proposed that the metal capping layer be deposited by a selective process onto the Cu to minimize further processing.

Abstract: A conducting material comprising: a conducting core region comprising copper and from 0.001 atomic percent to 0.6 atomic percent of one or more metals selected from iridium, osmium and rhenium; and an interfacial region. The interfacial region comprises at least 80 atomic percent or greater of the one or more metals. The invention is also directed to a method of making a conducting material comprising: providing an underlayer; contacting the underlayer with a seed layer, the seed layer comprising copper and one or more metals selected from iridium, osmium and rhenium; depositing a conducting layer comprising copper on the seed layer, and annealing the conducting layer at a temperature sufficient to cause grain growth in the conducting layer, yet minimize the migration of the one or more alloy metals from the seed layer to the conducting layer.

Abstract: The idea of the invention is to coat the free surface of patterned Cu conducting lines in on-chip interconnections (BEOL) wiring by a 1-20 nm thick metal layer prior to deposition of the interlevel dielectric. This coating is sufficiently thin so as to obviate the need for additional planarization by polishing, while providing protection against oxidation and surface, or interface, diffusion of Cu which has been identified by the inventors as the leading contributor to metal line failure by electromigration and thermal stress voiding. Also, the metal layer increases the adhesion strength between the Cu and dielectric so as to further increase lifetime and facilitate process yield. The free surface is a direct result of the CMP (chemical mechanical polishing) in a damascene process or in a dry etching process by which Cu wiring is patterned. It is proposed that the metal capping layer be deposited by a selective process onto the Cu to minimize further processing.

Abstract: A system and method is disclosed for providing personal financial services at a single branch location for customers having accounts at a plurality of private financial institutions. First and second customer provide information representing their respective private financial accounts. The accounts may be held at different institutions. The branch location provides personal financial services to enable the first customer and the second customer to conduct transactions for their respective accounts. Preferably, a network of branches locations are provided that are each operable to provide personal bank services for a plurality of accounts held at a plurality of private financial institutions.

Abstract: An animal selected for lacking heparan sulfate 3-O-sulfotransferase-1 activity is provided. This animal exhibits characteristics associated with myxomatous valvular disease and is useful for identifying agents which prevent, delay or treat myxomatous valvular disease. Methods of diagnosing myxomatous valvular disease are also provided.

Abstract: The present invention is directed to an alpha-W layer which is employed in interconnect structures such as trench capacitors or damascene wiring levels as a diffusion barrier layer. The alpha-W layer is a single phased material that is formed by a low temperature/pressure chemical vapor deposition process using tungsten hexacarbonyl, W(CO)6, as the source material.

Abstract: In a multilevel microelectronic integrated circuit, air comprises permanent line level dielectric and ultra low-K materials are via level dielectric. The air is supplied to line level subsequent to removal of sacrificial material by clean thermal decomposition and assisted diffusion of byproducts through porosities in the IC structure. Optionally, air is also included within porosities in the via level dielectric. By incorporating air to the extent produced in the invention, intralevel and interlevel dielectric values are minimized.

Abstract: A conducting material comprising: a conducting core region comprising copper and from 0.001 atomic percent to 0.6 atomic percent of one or more metals selected from iridium, osmium and rhenium; and an interfacial region. The interfacial region comprises at least 80 atomic percent or greater of the one or more metals. The invention is also directed to a method of making a conducting material comprising: providing an underlayer; contacting the underlayer with a seed layer, the seed layer comprising copper and one or more metals selected from iridium, osmium and rhenium; depositing a conducting layer comprising copper on the seed layer, and annealing the conducting layer at a temperature sufficient to cause grain growth in the conducting layer, yet minimize the migration of the one or more alloy metals from the seed layer to the conducting layer.

Abstract: A conducting material comprising: a conducting core region comprising copper and from 0.001 atomic percent to 0.6 atomic percent of one or more metals selected from iridium, osmium and rhenium; and an interfacial region. The interfacial region comprises at least 80 atomic percent or greater of the one or more metals. The invention is also directed to a method of making a conducting material comprising: providing an underlayer; contacting the underlayer with a seed layer, the seed layer comprising copper and one or more metals selected from iridium, osmium and rhenium; depositing a conducting layer comprising copper on the seed layer, and annealing the conducting layer at a temperature sufficient to cause grain growth in the conducting layer, yet minimize the migration of the one or more alloy metals from the seed layer to the conducting layer.

Abstract: The present invention provides methods for the production of N-deacetylate N-sulfate derivatives of non-sulfated N-acetyl heparosan (HS) polysaccharides, compounds thus obtained and compositions comprising same. This invention also provides applications of N-deacetylate N-sulfate derivatives of non-sulfated N-acetyl heparosan (HS) polysaccharides, and compositions comprising same, for use in controlling coagulation and treating thrombosis.

Abstract: The present invention provides a plastically and/or viscoelastically deformable layer that can be used in conjunction with a low-k dielectric (k of less than 4.0) to provide an electronic semiconductor structure having improved reliability. The deformable layer can be incorporated into various points within an electronic structure to dissipate energy within the structure that may cause the low-k dielectric material to crack or delaminate therefrom. Moreover, the presence of the deformable layer with the electronic structure improves the overall strength of the resultant structure.