Abstract: Stealth-dicing-compatible devices and methods to prevent acoustic backside reflections on acoustic wave devices are disclosed. An acoustic wave device comprises a substrate having opposing top and bottom surfaces, where a first portion of the bottom surface has a higher roughness than a second portion of the bottom surface, and an acoustic resonator over the top surface of the substrate. The acoustic resonator comprises a piezoelectric layer having opposing top and bottom surfaces and a plurality of electrodes, at least some of which are disposed on the top surface of the piezoelectric layer. The first portion of the bottom surface of the substrate is below and opposite from the acoustic resonator, and the second portion of the bottom surface of the substrate is not located below and opposite from the acoustic resonator. Multiple first portions, each separated from the other by second portions, may exist.

Abstract: A bonded wafer with low carrier lifetime in silicon comprises a silicon substrate having opposing top and bottom surfaces, the structure of the silicon in a top portion of the silicon substrate having been modified to reduce the carrier lifetime in the top portion relative to the carrier lifetime in portions of the silicon substrate other than the top portion; a piezoelectric layer bonded over the top surface of the silicon substrate and having opposing top and bottom surfaces separated by a distance T; and a pair of electrodes having fingers that are inter-digitally dispersed on the top surface of the piezoelectric layer in a pattern having a center-to-center distance D between adjacent fingers of the same electrode, the electrodes comprising a portion of a Surface Acoustic Wave (SAW) device. Modification of the top portion of the silicon substrate prevents the creation of a parasitic conductance within the top portion of the silicon substrate during operation of the SAW device.

Abstract: RF filtering circuitry includes a common node, a first input/output node, a second/input output node, a first filter coupled between the common node, the first input/output node, and the second input/output node, and a second filter coupled between the common node, the first input/output node, and the second input/output node. The first filter is configured to provide a first bandpass filter response between the common node and the first input/output node, where the first bandpass filter response is configured to pass RF signals within a first subset of the first frequency band while attenuating other signals. Further, the first filter is configured to provide a bandstop filter response between the common node and the second input/output node, where the bandstop filter response is configured to attenuate RF signals within the first subset of the first frequency band while passing other signals.

Abstract: RF circuitry, which includes a first acoustic RF resonator (ARFR), a first compensating ARFR, and a second compensating ARFR, is disclosed. The first compensating ARFR is coupled between a first inductive element and a first end of the first ARFR. The second compensating ARFR is coupled between a second inductive element and a second end of the first ARFR. The first inductive element and the second inductive element are negatively coupled to one another. The first compensating ARFR, the second compensating ARFR, the first inductive element, and the second inductive element at least partially compensate for a parallel capacitance of the first ARFR.

Abstract: An RF ladder filter having a parallel capacitance compensation circuit is disclosed. The parallel capacitance compensation circuit is made up of a first inductive element with a first T-terminal and a first end coupled to a first ladder terminal and a second inductive element with a second T-terminal that is coupled to the first T-terminal of the first inductive element and a second end coupled to a second ladder terminal. Further included is a compensating acoustic RF resonator (ARFR) having a fixed node terminal and a third T-terminal that is coupled to the first T-terminal of the first inductive element and the second T-terminal of the second inductive element, and a finite number of series-coupled ladder ARFRs, wherein the parallel capacitance compensation circuit is coupled across one of the finite number of series-coupled ARFRs by way of the first ladder terminal and the second ladder terminal.

Abstract: RF circuitry, which includes a first acoustic RF resonator (ARFR) and a first compensating ARFR, is disclosed. A first inductive element is coupled between the first compensating ARFR and a first end of the first ARFR. A second inductive element is coupled between the first compensating ARFR and a second end of the first ARFR. The first compensating ARFR, the first inductive element, and the second inductive element at least partially compensate for a parallel capacitance of the first ARFR.

Abstract: Embodiments of apparatuses, systems and methods relating to temperature compensated bulk acoustic wave devices. In some embodiments, temperature compensated bulk acoustic wave devices are described with an over-moded reflector layer.

Abstract: Embodiments of apparatuses, systems and methods relating to temperature compensated bulk acoustic wave devices. In some embodiments, temperature compensated bulk acoustic wave devices are described with an over-moded reflector layer.

Abstract: Embodiments of apparatuses, systems and methods relating to temperature compensation of acoustic resonators in the electrical domain are disclosed. Other embodiments may be described and claimed.

Abstract: Disclosed embodiments include a surface acoustic wave device having electrode period, electrode width, and/or ratio of electrode width to electrode period varied in a prescribed manner.

Abstract: Disclosed embodiments include a surface acoustic wave device having electrode period, electrode width, and/or ratio of electrode width to electrode period varied in a prescribed manner.

Abstract: Embodiments of apparatuses, systems and methods relating to temperature compensation of acoustic resonators in the electrical domain are disclosed. Other embodiments may be described and claimed.

Abstract: In a method for manufacturing a piezoelectric oscillating circuit in thin film technology, wherein the oscillating circuit includes a predetermined natural frequency and a plurality of layers, first of all at least a first layer of the piezoelectric oscillating circuit is generated. Subsequently, by processing the first layer a frequency correction is performed. Subsequently, at least a second layer of the piezoelectric oscillating circuit is generated and processed for performing a second frequency correction.

Abstract: An acoustic wave device operable as a piston mode wave guide includes electrodes forming an interdigital transducer on a surface of the piezoelectric substrate, wherein each of the plurality of electrodes is defined as having a transversely extending center region and transversely opposing edge regions for guiding an acoustic wave longitudinally through the transducer. A Silicon Oxide overcoat covers the transducer and a Silicon Nitride layer covers the Silicon Oxide overcoat within only the center and edge regions. The thickness of the Silicon Nitride layer is sufficient for providing a frequency modification to the acoustic wave within the center region and is optimized with a positioning of a Titanium strip within each of the opposing edge regions. The Titanium strip reduces the acoustic wave velocity within the edge regions with the velocity in the edge regions being less than the wave velocity within the transducer center region.

Abstract: An acoustic wave device operable as a piston mode wave guide includes electrodes forming an interdigital transducer on a surface of the piezoelectric substrate, wherein each of the plurality of electrodes is defined as having a transversely extending center region and transversely opposing edge regions for guiding an acoustic wave longitudinally through the transducer. A Silicon Oxide overcoat covers the transducer and a Silicon Nitride layer covers the Silicon Oxide overcoat within only the center and edge regions. The thickness of the Silicon Nitride layer is sufficient for providing a frequency modification to the acoustic wave within the center region and is optimized with a positioning of a Titanium strip within each of the opposing edge regions. The Titanium strip reduces the acoustic wave velocity within the edge regions with the velocity in the edge regions being less than the wave velocity within the transducer center region.

Abstract: An RF system includes a power amplifier with output impedance and a BAW filter with an input impedance and output impedance. A matching network includes an inductance connecting the power amplifier to the BAW filter and an impedance transformation ratio of at least 1:10 is provided at the output impedance of the power amplifier to the output impedance of the BAW filter.

Abstract: A method for manufacturing a piezoelectric resonator, comprising the step of: producing an arrangement comprising a piezoelectric layer having a resonance frequency temperature coefficient of a first sign, a first and a second electrode. The piezoelectric layer is arranged between the first and second electrodes, and a compensation layer is arranged between the first electrode and the piezoelectric layer. The compensation layer has a compensation material having a second resonance frequency temperature coefficient of a second sign opposite to the first one. The producing comprises providing the compensation material with a modification material to increase a conductivity of the compensation layer in a direction between the first electrode and the piezoelectric layer.

Abstract: Improved coupling coefficients and desirable filter characteristics are exhibited in a SAW filter including an electrode pattern deposited on a piezoelectric substrate bonded directly to an anti-reflective layer, wherein the anti-reflective layer is bonded to a carrier through an adhesive layer such that a preselected thickness of the anti-reflective layer is sufficient for enhancing an acoustic match between the piezoelectric substrate and the adhesive layer.

Abstract: An interdigital transducer includes an edge gap length between ends of electrodes and the opposing busbar increased sufficiently for reducing or even eliminating tunneling effects through the gap. As a result, a wave velocity of the acoustic wave within the longitudinally extending edge regions is less than the wave velocity within the transducer center region, and the wave velocity within the opposing gap regions is greater than a velocity in the transducer center region, thus an essentially flat propagation mode results within the aperture of the transducer. A SAW transducer or a SAW resonator on a high coupling substrate will thus guide the energy in the transducer region without a need for apodization. Higher equivalent coupling factors as well as lower losses are obtained.

Abstract: An acoustic wave device includes electrodes carried on a surface of a piezoelectric material and an array of reflective obstacles such that elastic energy resulting from a piezoelectric effect is preferentially directed along a primary wave propagation path. The array of reflective obstacles are positioned generally parallel to the surface of the piezoelectric material and redirect acoustic waves typically reflected in other than a desirable direction to along a desired direction generally along the primary propagation path. The obstacles improve performance for SAW and BAW devices by effecting reflected energy and suppressing spurious modes.